Nexperia-PBSS4041SN-115
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PBSS4041SN
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
Rev. 2 — 18 October 2010
Product data sheet
1. Product
profile
1.1 General
description
NPN/NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Type number
Package
N
experia
SOT96-1
PNP/PNP
complement
NPN/PNP
complement
Name
PBSS4041SN
SO8
PBSS4041SP
PBSS4041SPN
1.2 Features
and benefits
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick
reference data
Table 2.
Symbol Parameter
V
CEO
collector-emitter voltage
I
C
Quick reference data
Conditions
Min
Typ
Max
60
Unit
V
open base
–
–
–
–
–
–
collector current
6.7
15
A
I
CM
peak collector current
single pulse;
A
t
p
≤
1 ms
[1]
R
CEsat
collector-emitter
I
C
= 4 A; I
B
= 0.2 A
–
32
48
m
Ω
saturation resistance
[1] Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
2. Pinning
information
Table 3.
Pinning
Pin
1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
8
7
6
5
8
5
2
3
emitter TR2
base TR2
TR1
1
TR2
3
4
5
collector TR2
collector TR2
collector TR1
collector TR1
1
4
2
4
006aaa966
6
7
8
3. Ordering
information
Table 4.
Ordering information
Type number
Package
Name
SO8
Description
Version
PBSS4041SN
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
4. Marking
Table 5.
Marking codes
Type number
Marking code
PBSS4041SN
4041SN
5. Limiting
values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
open emitter
open base
–
–
–
–
–
60
60
5
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current
open collector
6.7
15
I
CM
peak collector current
single pulse;
t
p
≤
1 ms
I
B
base current
–
–
–
–
1
A
[1]
[2]
[3]
P
tot
total power dissipation
T
amb
≤
25
°
C
0.73
1
W
W
W
1.7
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
2 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
Parameter
Conditions
Min
Max
Unit
[1]
[2]
[3]
total power dissipation
T
amb
≤
25
°
C
–
0.86
1.4
W
W
W
°
C
°
C
°
C
–
–
2.3
T
j
junction temperature
ambient temperature
storage temperature
–
150
+150
+150
T
amb
T
stg
−
55
−
65
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
006aac322
3.0
P
(W)
tot
(1)
2.0
(2)
(3)
1.0
0.0
−
75
−
25
25
75
125
175
(
°
C)
T
amb
(1) Ceramic
PCB, Al
2
O
3
, standard footprint
(2) FR4
PCB, mounting pad for collector 1 cm
2
(3) FR4
PCB, standard footprint
Fig 1.
Per device: Power derating curves
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
3 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
6. Thermal
characteristics
Table 7.
Thermal characteristics
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
[1]
[2]
[3]
R
th(j-a)
thermal resistance from
junction to ambient
in free air
–
–
–
–
–
–
–
–
170
125
75
K/W
K/W
K/W
K/W
R
th(j-sp)
thermal resistance from
junction to solder point
40
Per device
[1]
[2]
[3]
R
th(j-a)
thermal resistance from
junction to ambient
in free air
–
–
–
–
–
–
145
90
K/W
K/W
K/W
55
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
006aac323
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
2
10
0.2
0.1
10
0.05
0.02
0.01
1
0
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
4 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
006aac324
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac325
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.1
0.2
10
0.05
0.01
0.02
0
1
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
5 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
I
CBO
collector-base
cut-off current
V
CB
= 60 V; I
E
= 0 A
–
–
–
–
100
50
nA
V
CB
= 60 V; I
E
= 0 A;
μ
A
T
j
= 150
°
C
I
CES
I
EBO
h
FE
collector-emitter
cut-off current
V
CE
= 48 V; V
BE
= 0 V
–
–
–
–
100
100
nA
nA
emitter-base
cut-off current
V
EB
= 5 V; I
C
= 0 A
[1]
DC current gain
V
CE
= 2 V
I
C
= 500 mA
I
C
= 1 A
300
300
250
150
75
500
500
450
250
150
–
–
–
–
–
I
C
= 2 A
I
C
= 4 A
I
C
= 6 A
[1]
V
CEsat
collector-emitter
saturation voltage
I
C
= 1 A; I
B
= 50 mA
I
C
= 1 A; I
B
= 10 mA
I
C
= 2 A; I
B
= 40 mA
I
C
= 4 A; I
B
= 200 mA
I
C
= 4 A; I
B
= 40 mA
I
C
= 7 A; I
B
= 350 mA
I
C
= 4 A; I
B
= 200 mA
–
–
–
–
–
–
–
40
60
mV
mV
mV
mV
mV
mV
m
Ω
65
100
145
190
320
350
48
85
125
220
230
32
[1]
[1]
R
CEsat
V
BEsat
collector-emitter
saturation resistance
base-emitter
saturation voltage
I
C
= 1 A; I
B
= 100 mA
I
C
= 4 A; I
B
= 400 mA
V
CE
= 2 V; I
C
= 2 A
–
–
–
0.86
1.05
0.75
1
V
V
V
1.2
0.85
[1]
V
BEon
base-emitter
turn-on voltage
t
d
t
r
delay time
rise time
V
CC
= 12.5 V; I
C
= 1 A;
I
Bon
= 0.05 A; I
Boff
=
−
0.05 A
–
–
–
–
–
–
–
35
–
–
–
–
–
–
–
ns
65
ns
t
on
t
s
turn-on time
storage time
fall time
100
1050
220
1270
130
ns
ns
t
f
ns
t
off
f
T
turn-off time
ns
transition frequency
V
CE
= 10 V; I
C
= 100 mA;
f = 100 MHz
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
–
35
–
pF
[1] Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
6 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
006aac326
006aac327
1000
16.0
(1)
(2)
I
B
(mA) = 300
h
FE
I
270
210
C
(A)
240
180
800
150
12.0
120
60
90
600
400
200
0
8.0
4.0
0.0
(3)
30
−
1
2
3
4
5
10
1
10
10
10
10
10
(mA)
0.0
1.0
2.0
3.0
4.0
5.0
(V)
I
C
V
CE
V
CE
= 2 V
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3)
T
amb
=
−
55
°
C
Fig 5.
DC current gain as a function of collector
current; typical values
Fig 6.
Collector current as a function of
collector-emitter voltage; typical values
006aac328
006aac329
1.4
1.6
V
BEsat
(V)
V
(V)
BE
1.2
0.8
0.4
0.0
1.0
(1)
(2)
(1)
(2)
(3)
0.6
(3)
0.2
10
−
1
2
3
4
5
−
1
2
3
4
5
1
10
10
10
10
10
(mA)
10
1
10
10
10
10
10
I (mA)
C
I
C
V
CE
= 2 V
amb
=
−
55
°
C
I
C
/I
B
= 20
(1) T
amb
=
−
55
°
C
(1)
T
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
Fig 7.
Base-emitter voltage as a function of collector
current; typical values
Fig 8.
Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
7 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
006aac330
006aac331
1
1
V
V
CEsat
(V)
CEsat
(V)
−
1
−
1
10
10
(1)
(2)
(1)
(2)
−
2
−
2
10
10
(3)
2
(3)
−
3
10
−
3
10
10
10
−
1
3
4
5
−
1
2
3
4
5
1
10
10
10
10
10
(mA)
1
10
10
10
10
10
I (mA)
C
I
C
I
C
/I
B
= 20
(1) T
amb
= 100
°
C
(2)
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
T
amb
= 25
°
C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
T
Fig 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aac332
006aac333
3
3
10
10
R
CEsat
R
CEsat
(
Ω
)
(
Ω
)
2
2
10
10
(1)
(2)
10
10
1
1
(1)
(2)
(3)
−
1
−
1
10
10
(3)
3
−
2
10
−
2
10
10
10
−
1
2
4
5
−
1
2
3
4
5
1
10
10
10
10
10
(mA)
1
10
10
10
10
10
I (mA)
C
I
C
I
C
/I
B
= 20
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
(3)
T
amb
=
−
55
°
C
Fig 11.
Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12.
Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
8 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
8. Test
information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 13.
BISS transistor switching time definition
V
V
CC
BB
R
R
C
B
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450
Ω
450
Ω
R2
V
I
DUT
R1
mlb826
V
CC
= 12.5 V; I
C
= 1 A; I
Bon
= 0.05 A; I
Boff
=
−
0.05 A
Fig 14.
Test circuit for switching times
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
9 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
9. Package
outline
5.0
4.8
1.75
1.0
0.4
6.2 4.0
5.8 3.8
pin 1 index
0.49
0.36
0.25
0.19
1.27
Dimensions in mm
03-02-18
Fig 15.
Package outline SOT96-1 (SO8)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
Packing quantity
1000
2500
PBSS4041SN
SOT96-1
8 mm pitch, 12 mm tape and reel
-115
-118
[1] For
further information and the availability of packing methods, see
Section 14
.
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
10 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
11. Soldering
5.50
0.60 (8
×
)
1.30
4.00 6.60 7.00
1.27 (6
×
)
solder lands
sot096-1_fr
placement accuracy
±
0.25
Dimensions in mm
occupied area
Fig 16.
Reflow soldering footprint SOT96-1 (SO8)
1.20 (2
×
)
enlarged solder land
0.60 (6
×
)
0.3 (2
×
)
1.30
4.00 6.60 7.00
1.27 (6
×
)
5.50
board direction
solder lands
solder resist
placement accurracy
± ±
0.25
sot096-1_fw
occupied area
Dimensions in mm
Fig 17.
Wave soldering footprint SOT96-1 (SO8)
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
11 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
12. Revision history
Table 10.
Revision history
Document ID
Release date
20101018
Data sheet status
Change notice
Supersedes
PBSS4041SN v.2
Modifications:
Product data sheet
–
PBSS4041SN v.1
•
Figure 1 “Per device: Power derating curves”
: updated.
20100714 Product
data sheet
PBSS4041SN v.1
–
–
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
12 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
13. Legal information
13.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
malfunction of a Nexperia product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
therefore such inclusion and/or use is at the customer’s own risk.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the
customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
13.3 Disclaimers
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
Nexperia
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever,
Nexperia’s
aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
Right to make changes —
Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use —
Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
13 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For sales office addresses, please send an email to:
salesaddresses@
nexperia.com
PBSS4041SN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 18 October 2010
14 of 15
PBSS4041SN
Nexperia
60
V
,
6
.7 A NPN/NPN low V
CEsat
(BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
10
Packing information
. . . . . . . . . . . . . . . . . . . .
10
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . .
13
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
14
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . .
14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
18 October 2010
