Nexperia-PBSS4140DPNF
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS4140DPN
40 V low V
CEsat
NPN/PNP
transistor
Product data sheet
2001 Dec 13
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
FEATURES
QUICK REFERENCE DATA
SYMBOL
•
600 mW total power dissipation
•
Low collector-emitter saturation voltage
•
High current capability
PARAMETER
MAX. UNIT
V
CEO
I
C
collector-emitter voltage
40
1
V
peak collector current
peak collector current
NPN
A
•
Improved device reliability due to reduced heat
generation
I
CM
2
A
TR1
TR2
R
CEsat
−
−
•
Replaces two SOT23 packaged low V
CEsat
transistors
on same PCB area
PNP
−
−
equivalent on-resistance
<500
m
Ω
•
Reduces required PCB area
•
Reduced pick and place costs.
PINNING
PIN
1, 4
2, 5
6, 3
DESCRIPTION
APPLICATIONS
emitter
base
TR1; TR2
TR1; TR2
TR1; TR2
•
General purpose switching and muting
•
LCD backlighting
collector
•
Supply line switching circuits
•
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
5
6
5
4
4
handbook, halfpage
DESCRIPTION
TR2
NPN/PNP low V
CEsat
transistor pair in an SC-74 (SOT457)
plastic package.
TR1
1
2
3
1
2
3
MARKING
Top view
MAM445
TYPE NUMBER
PBSS4140DPN
MARKING CODE
Fig.1 Simplified
outline SC74 (SOT457) and
symbol.
M2
2001 Dec 13
2
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open emitter
open base
−
−
−
−
−
−
−
40
V
V
V
A
A
A
40
open collector
5
1
I
CM
2
I
BM
1
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°
C; note 1
370
+150
150
+150
mW
°
C
−
65
−
°
C
T
amb
−
65
°
C
Per device
P
tot
total power dissipation
T
amb
≤
25
°
C; note 1
−
600
mW
Note
1. Device
mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
208
K/W
Note
1. Device
mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
2001 Dec 13
3
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off current
V
CB
= 40 V; I
E
= 0
−
−
−
−
−
−
−
−
−
100
50
nA
μ
A
nA
nA
V
CB
= 40 V; I
E
= 0; T
j
= 150
°
C
−
I
CEO
I
EBO
h
FE
collector-emitter cut-off current
V
CE
= 30 V; I
B
= 0
−
100
100
−
emitter-base cut-off current
DC current gain
V
EB
= 5 V; I
C
= 0
−
V
CE
= 5 V; I
C
= 1 mA
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
300
−
V
CEsat
collector-emitter saturation
voltage
200
250
500
mV
mV
mV
−
−
NPN transistor
h
FE
DC current gain
V
CE
= 5 V; I
C
= 500 mA
V
CE
= 5 V; I
C
= 1 A
300
200
−
−
900
−
−
V
BEsat
V
BEon
R
CEsat
f
T
base-emitter saturation voltage
I
C
= 1 A; I
B
= 100 mA
−
1.2
1.1
<500
−
V
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
V
CE
= 5 V; I
C
= 1 A
−
−
V
I
C
= 500 mA; I
B
= 50 mA; note 1
−
260
−
m
Ω
MHz
pF
V
CE
=10 V; I
C
= 50 mA; f = 100 MHz
150
C
c
collector capacitance
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
−
−
10
PNP transistor
h
FE
DC current gain
V
CE
=
−
5 V; I
C
=
−
100 mA
V
CE
=
−
5 V; I
C
=
−
500 mA
V
CE
=
−
5 V; I
C
=
−
1 A
300
250
160
−
−
800
−
−
−
−
V
BEsat
V
BEon
R
CEsat
f
T
base-emitter saturation voltage
I
C
=
−
1 A; I
B
=
−
50 mA
−
−
1.1
−
1.0
<500
−
V
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
V
CE
=
−
5 V; I
C
=
−
1 A
−
−
V
I
C
=
−
500 mA; I
B
−
50 mA; note 1
−
300
−
m
Ω
MHz
V
CE
=
−
10 V; I
C
=
−
50 mA;
150
f = 100 MHz
C
c
collector capacitance
V
CB
=
−
10 V; I
E
= I
e
= 0; f =1 MHz
−
−
12
pF
Note
1. Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
2001 Dec 13
4
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
MLD635
MLD642
1000
10
handbook, halfpage
handbook, halfpage
h
FE
800
V
(1)
BE
(V)
600
(2)
(1)
1
400
(2)
(3)
(3)
200
−
1
10
10
0
10
−
1
2
3
I
4
−
1
2
3
I
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
TR1 (NPN);
V
CE
= 5 V.
(1)
amb
= 150
°
C.
TR1 (NPN);
V
CE
= 5 V.
(1)
amb
=
−
55
°
C.
T
T
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
Fig.2 DC
current gain as a function of collector
current; typical values.
Fig.3 Base-emitter
voltage as a function of
collector current; typical values.
MLD636
MHC126
3
2
10
10
handbook, halfpage
handbook, halfpage
R
V
CEsat
(
Ω
)
CEsat
(mV)
(1)
2
10
10
(2)
(3)
10
1
(1)
(2)
(3)
−
1
10
10
1
2
3
4
−
1
2
3
I
4
1
10
10
10
10
1
10
10
10
10
(mA)
I
(mA)
C
C
TR1 (NPN);
I
C
/I
B
= 10.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
TR1 (NPN);
I
C
/I
B
= 10.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
(3)
T
amb
=
−
55
°
C.
Fig.4 Collector-emitter
saturation voltage as a
function of collector current; typical values.
Fig.5 Equivalent
on-resistance as a function of
collector current; typical values.
2001 Dec 13
5
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
MLD637
400
handbook, halfpage
f
T
(MHz)
300
200
100
0
0
200
400
600
800
I
1000
(mA)
C
TR1 (NPN);
V
CE
= 10 V.
Fig.6 Transition
frequency as a function of
collector current; typical values.
2001 Dec 13
6
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
MLD639
MLD638
1200
−
10
handbook, halfpage
handbook, halfpage
h
FE
V
BE
(V)
(1)
800
(1)
−
1
(2)
(2)
(3)
400
(3)
−
1
−
10
0
10
−
10
−
1
2
3
4
−
1
2
3
I
4
−
1
−
10
−
10
−
10
−
10
(mA)
−
1
−
10
−
10
−
10
−
10
(mA)
I
C
C
TR2 (PNP);
V
CE
=
−
5 V.
(1)
amb
= 150
°
C.
TR2 (PNP);
V
CE
=
−
5 V.
(1)
amb
=
−
55
°
C.
T
T
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
Fig.7 DC
current gain as a function of collector
current; typical values.
Fig.8 Base-emitter
voltage as a function of
collector current; typical values.
MLD640
MHC127
3
2
−
10
10
handbook, halfpage
handbook, halfpage
R
V
CEsat
(
Ω
)
CEsat
(mV)
(1)
2
−
10
10
(3)
(2)
−
10
1
(1)
(2)
(3)
−
1
−
10
10
−
1
2
3
4
−
1
2
3
4
−
1
−
10
−
10
−
10
−
10
−
1
−
10
−
10
−
10
−
10
(mA)
I
(mA)
I
C
C
TR2 (PNP);
I
C
/I
B
= 10.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
TR2 (PNP);
I
C
/I
B
= 10.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
(3)
T
amb
=
−
55
°
C.
Fig.9 Collector-emitter
saturation voltage as a
function of collector current; typical values.
Fig.10 Equivalent
on-resistance as a function of
collector current; typical values.
2001 Dec 13
7
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
MLD641
300
handbook, halfpage
f
T
(MHz)
200
100
0
0
−
200
−
400
−
600
−
800
(mA)
−
1000
I
C
TR2 (PNP);
V
CE
= -10 V.
Fig.11 Transition
frequency as a function of
collector current; typical values.
2001 Dec 13
8
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M
B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2001 Dec 13
9
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Dec 13
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp11
Date of release: 2001 Dec 13
Document order number:
9397 750 09062
