Nexperia-PBSS4160T-215
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS4160T
60 V, 1 A
NPN low V
CEsat
(BISS) transistor
Product data sheet
2004 May 12
Supersedes data of 2003 Jun 24
NXP Semiconductors
Product data sheet
60
V
, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
FEATURES
QUICK REFERENCE DATA
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability I
C
and I
CM
•
High efficiency, reduces heat generation
•
Reduces printed-circuit board area required
SYMBOL
V
CEO
I
C
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
60
1
V
A
I
CM
2
A
•
Cost effective replacement for medium power transistor
BCP55 and BCX55.
R
CEsat
250
m
Ω
PINNING
APPLICATIONS
PIN
1
DESCRIPTION
•
Major application segments:
– Automotive
42 V power
– Telecom
infrastructure
– Industrial.
base
2
emitter
3
collector
•
Power management:
– DC-to-DC
conversion
– Supply
line switching.
•
Peripheral driver
handbook, halfpage
3
3
2
1
– Driver
in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive
load driver (e.g. relays,
buzzers and motors).
1
2
Top view
MAM255
DESCRIPTION
Fig.1 Simplified
outline (SOT23) and symbol.
NPN low V
CEsat
transistor in a SOT23 plastic package.
PNP complement: PBSS5160T.
MARKING
TYPE NUMBER
PBSS4160T
Note
MARKING CODE
(1)
*U5
1. *
= p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
NAME
VERSION
PBSS4160T
−
SOT23
2004 May 12
2
NXP Semiconductors
Product data sheet
60
V
, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
80
UNIT
V
CBO
V
CEO
V
EBO
I
C
−
−
−
−
−
−
−
−
−
−
−
V
V
V
A
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
open base
60
open collector
note 1
5
0.9
1
note 2
I
CM
I
B
peak collector current
base current (DC)
t =
1 ms or limited by T
j(max)
2
300
1
mA
A
I
BM
P
tot
peak base current
t
p
≤
300
μ
s;
δ ≤
0.02
T
amb
≤
25
°
C; note 1
T
amb
≤
25
°
C; note 2
T
amb
≤
25
°
C; notes 1 and 3
total power dissipation
270
400
1.25
+150
150
+150
mW
mW
W
T
stg
T
j
storage temperature
−
65
−
°
C
junction temperature
°
C
T
amb
operating ambient temperature
−
65
°
C
Notes
1. Device
mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device
mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
3. Operated
under pulsed conditions: duty cycle
δ ≤
20%, pulse width t
p
≤
10 ms.
MLE128
500
handbook, halfpage
P
tot
(mW)
400
(1)
300
(2)
200
100
0
0
40
80
120
160
(
°
C)
T
amb
(1) Device
mounted with 1 cm
2
collector tab.
(2) Device
mounted on standard footprint.
Fig.2 Power
derating curves.
2004 May 12
3
NXP Semiconductors
Product data sheet
60
V
, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
VALUE
465
UNIT
K/W
K/W
K/W
R
th(j-a)
thermal resistance from junction to
ambient
in free air; note 2
312
in free air; notes 1 and 3
100
Notes
1. Device
mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device
mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm
2
collector mounting pad.
3. Operated
under pulsed conditions: duty cycle
δ ≤
20%, pulse width t
p
≤
10 ms.
MLE127
3
10
δ =
1
Z
th
0.75
(K/W)
0.5
0.33
2
10
0.2
0.1
0.05
0.02
0.01
10
0
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on printed-circuit board; standard footprint.
Fig.3 Transient
thermal impedance as a function of pulse time; typical values.
2004 May 12
4
NXP Semiconductors
Product data sheet
60
V
, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V
CB
= 60 V; I
E
= 0 A
MIN.
TYP. MAX. UNIT
I
CBO
collector-base cut-off current
−
−
100
50
nA
μ
A
nA
nA
V
CB
= 60 V; I
E
= 0 A; T
j
= 150
°
C
V
CE
= 60 V; V
BE
= 0 A
−
−
I
CES
I
EBO
h
FE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
−
−
100
100
−
V
EB
= 5 V; I
C
= 0 A
−
−
V
CE
= 5 V; I
C
= 1 mA
250
200
100
−
400
350
150
90
V
CE
= 5 V; I
C
= 500 mA; note 1
V
CE
= 5 V; I
C
= 1 A; note 1
−
−
V
CEsat
collector-emitter saturation voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
110
140
250
1.1
250
0.9
−
mV
mV
mV
V
−
110
200
0.95
200
0.82
220
I
C
= 1 A; I
B
= 100 mA; note 1
−
V
BEsat
R
CEsat
V
BEon
f
T
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
I
C
= 1 A; I
B
= 50 mA
−
I
C
= 1 A; I
B
= 100 mA; note 1
V
CE
= 5 V; I
C
= 1 A
−
m
Ω
V
−
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz
150
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= I
e
= 0 A; f = 1 MHz
−
5.5
10
pF
Note
1. Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
MLE130
MLE133
1.2
800
handbook, halfpage
handbook, halfpage
h
V
FE
BE
(V)
(1)
600
(1)
0
.
8
(2)
(3)
(2)
400
0
.
4
(3)
200
0
10
0
10
−
1
2
3
I
4
−
1
2
3
I
4
1
10
10
10
10
(mA)
C
1
10
10
10
10
(mA)
C
V
CE
= 5 V.
(1)
amb
= 100
°
C.
V
CE
= 5 V.
(1)
amb
=
−
55
°
C.
T
T
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 100
°
C.
Fig.4 DC
current gain as a function of collector
current; typical values.
Fig.5 Base-emitter
voltage as a function of
collector current; typical values.
2004 May 12
5
NXP Semiconductors
Product data sheet
60
V
, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
MLE135
MLE104
1
1
handbook, halfpage
handbook, halfpage
V
CEsat
(V)
V
CEsat
(V)
−
1
10
−
1
10
(1)
(2)
−
2
10
(3)
(1)
(3)
(2)
−
3
−
2
10
10
10
−
1
2
3
I
4
−
1
2
3
I
4
10
1
10
10
10
10
1
10
10
10
10
(mA)
(mA)
C
C
I
C
/I
B
= 10.
(1)
amb
= 100
°
C.
I
C
/I
B
= 20.
T
(1)
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
T
amb
= 100
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
Fig.6 Collector-emitter
saturation voltage as a
function of collector current; typical values.
Fig.7 Collector-emitter
saturation voltage as a
function of collector current; typical values.
MLE129
MLE134
1.2
1
handbook, halfpage
handbook, halfpage
V
V
BEsat
(V)
CEsat
(V)
(1)
(2)
(3)
0.8
(1)
−
1
10
(2)
0.4
−
2
10
0
10
−
1
2
3
I
4
−
1
2
3
I
4
10
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
I
C
/I
B
= 20.
T
amb
= 25
°
C.
(1) I
C
/I
B
= 100.
(2) I
C
/I
B
= 50.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3)
T
amb
= 100
°
C.
Fig.8 Collector-emitter
saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter
saturation voltage as a
function of collector current; typical values.
2004 May 12
6
NXP Semiconductors
Product data sheet
60
V
, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
MLE131
MLE132
3
2
10
(6)
(5) (4) (3)
(2)
(1)
handbook, halfpage
handbook, halfpage
I
C
R
CEsat
(
Ω
)
(A)
1.6
2
10
(7)
(8)
1.2
0.8
(9)
10
1
(10)
0.4
(1)
(3)
(2)
−
1
10
0
0
−
1
2
3
I
4
1
2
3
4
5
10
1
10
10
10
10
(mA)
V
(V)
C
CE
T
amb
= 25
°
C.
(1) I
B
= 60 mA.
(2) I
B
= 54 mA.
(5) I
B
= 36 mA.
(6) I
B
= 30 mA.
(9) I
B
= 12 mA.
(10) I
B
= 6 mA.
I
C
/I
B
= 20.
(1) T
amb
= 100
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(3)
I
B
= 48 mA.
(7)
I
B
= 24 mA.
(4) I
B
= 42 mA.
(8) I
B
= 18 mA.
Fig.11 Equivalent
on-resistance as a function of
collector current; typical values.
Fig.10 Collector
current as a function of
collector-emitter voltage; typical values.
2004 May 12
7
NXP Semiconductors
Product data sheet
60
V
, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w
M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2004 May 12
8
NXP Semiconductors
Product data sheet
60
V
, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 May 12
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp10
Date of release: 2004 May 12
Document order number:
9397 750 13198
