Nexperia-PBSS4160V-115
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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
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PBSS4160V
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
Rev. 03 — 11 December 2009
Product data sheet
1. Product
profile
1.1 General
description
Low V
CEsat
(BISS) NPN transistor in a SOT666 plastic package.
PNP complement: PBSS5160V.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High efficiency, reduces heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
Major application segments:
Automotive
T
e
lecom infrastructure
Industrial
Power management:
DC-to-DC conversion
Supply line switching
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick
reference data
Table 1.
Symbol
V
CEO
I
C
Quick reference data
Parameter
Conditions
Min Typ Max
Unit
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
–
–
–
–
–
–
–
60
1
V
A
A
[1]
[2]
I
CM
t = 1 ms or limited by T
j(max)
I
C
= 1 A; I
B
= 100 mA
2
R
CEsat
200 250 m
Ω
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, 1 cm
2
collector
mounting pad.
[2] Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
2. Pinning
information
Table 2.
Discrete pinning
Pin
Description
collector
base
Simplified outline
Symbol
1, 2, 5, 6
1, 2, 5, 6
6
5
4
3
4
emitter
3
4
sym014
1
2
3
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS4160V
–
plastic surface mounted package; 6 leads
SOT666
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4160V
41
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
2 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
Parameter
Conditions
Min
Max
80
Unit
V
collector-base voltage
open emitter
–
–
V
CEO
collector-emitter
voltage
open base
60
V
V
EBO
I
C
emitter-base voltage
collector current (DC)
open collector
–
–
5
V
A
[1]
[2]
0.9
1
I
CM
peak collector current
t = 1 ms or limited by
T
j(max)
–
2
A
I
B
base current (DC)
–
300
1
mA
A
I
BM
P
tot
peak base current
t
p
≤
300
μ
s;
δ ≤
0.02
–
[1]
[2]
total power dissipation
T
amb
≤
25
°
C
–
300
500
150
+150
+150
mW
mW
°
C
–
T
j
junction temperature
ambient temperature
storage temperature
–
T
amb
T
stg
−
65
−
65
°
C
°
C
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
001aaa714
0.6
P
tot
(W)
(1)
(2)
0.4
0.2
0
0
40
80
120
160
(
°
C)
T
amb
(1) FR4
PCB; 1 cm
2
collector mounting pad
(2) FR4
PCB; standard footprint
Fig 1.
Power derating curves
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
3 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
6. Thermal
characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min Typ Max
Unit
[1]
[2]
thermal resistance from junction
to ambient
in free air
–
–
–
–
415 K/W
250 K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
001aaa715
3
10
Z
(1)
(2)
(3)
(4)
th
(K/W)
2
10
(5)
(6)
(7)
(8)
(9)
10
(10)
1
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
Mounted on FR4 PCB; standard footprint
(1)
δ
= 1
(2)
δ
= 0.75
(3)
δ
= 0.5
(4)
δ
= 0.33
(5)
δ
= 0.2
(6)
δ
= 0.1
(7)
δ
= 0.05
(8)
δ
= 0.02
(9)
δ
= 0.01
(10)
δ
= 0
Fig 2.
Transient thermal impedance as a function of pulse time; typical values
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
4 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
I
CBO
collector-base
cut-off current
V
CB
= 60 V; I
E
= 0 A
–
–
–
–
100 nA
V
CB
= 60 V; I
E
= 0 A;
50
μ
A
T
j
= 150
°
C
I
CES
I
EBO
h
FE
collector-emitter
cut-off current
V
CE
= 60 V; V
BE
= 0 V
–
–
–
–
100 nA
100 nA
emitter-base cut-off
V
EB
= 5 V; I
C
= 0 A
current
DC current gain
V
CE
= 5 V; I
C
= 1 mA
V
CE
= 5 V; I
C
= 500 mA
V
CE
= 5 V; I
C
= 1 A
250 400
200 350
100 150
–
[1]
[1]
–
–
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 1 A; I
B
= 50 mA
–
–
–
–
90
110 mV
140 mV
250 mV
110
200
[1]
[1]
V
BEsat
R
CEsat
V
BEon
base-emitter
saturation voltage
0.95 1.1
200 250
m
Ω
0.82 0.9
V
equivalent
on-resistance
I
C
= 1 A; I
B
= 100 mA
V
CE
= 5 V; I
C
= 1 A
–
–
base-emitter
V
turn-on voltage
t
d
t
r
delay time
rise time
V
CC
= 10 V; I
C
= 0.5 A;
I
Bon
= 25 mA; I
Boff
=
−
25 mA
–
–
–
–
–
–
11
–
–
–
–
–
–
–
ns
78
ns
t
on
t
s
turn-on time
storage time
fall time
90
ns
340
160
500
ns
t
f
ns
t
off
f
T
turn-off time
ns
transition frequency
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz
150 220
MHz
C
c
collector
capacitance
V
CB
= 10 V; I
E
= I
e
= 0 A;
f = 1 MHz
–
5.5
10
pF
[1] Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
5 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
mle130
mle133
1.2
BE
800
h
V
FE
(V)
(1)
(2)
(3)
600
(1)
0
.
8
0
.
4
0
(2)
400
(3)
200
0
10
−
1
2
3
4
−
1
2
3
I
4
10
1
10
10
10
10
(mA)
C
1
10
10
10
10
(mA)
I
C
V
CE
= 5 V
V
CE
= 5 V
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
Fig 3.
DC current gain as a function of collector
current; typical values
Fig 4.
Base-emitter voltage as a function of collector
current; typical values
mle135
mle104
1
1
V
CEsat
(V)
V
CEsat
(V)
−
1
10
−
1
10
(1)
(3)
(2)
−
2
10
10
(1)
(3)
(2)
−
3
−
2
10
10
−
1
2
3
I
4
−
1
2
3
4
10
1
10
10
10
10
1
10
10
10
10
(mA)
(mA)
I
C
C
I
C
/I
B
= 10
I
C
/I
B
= 20
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 5.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
6 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
mle129
mle134
1
1.2
V
V
BEsat
(V)
CEsat
(V)
(1)
(2)
(3)
0.8
0.4
0
(1)
(2)
−
1
10
−
2
10
10
−
1
2
3
4
−
1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
I
I
C
C
T
amb
= 25
°
C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
I
C
/I
B
= 20
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
Fig 7.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8.
Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
7 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
mle132
mle131
3
2
10
(6) (5) (4) (3)
(2)
(1)
I
C
R
CEsat
(
Ω
)
(A)
1.6
2
10
(7)
(8)
1.2
0.8
(9)
10
(10)
1
(1)
0.4
0
(2)
(3)
−
1
10
−
1
2
3
4
0
1
2
3
4
5
10
1
10
10
10
10
I (mA)
C
V
CE
(V)
T
amb
= 25
°
C
I
C
/I
B
= 20
(1) I
B
= 60 mA
(2) I
B
= 54 mA
(3) I
B
= 48 mA
(4) I
B
= 42 mA
(5) I
B
= 36 mA
(6) I
B
= 30 mA
(7) I
B
= 24 mA
(8) I
B
= 18 mA
(9) I
B
= 12 mA
(10) I
B
= 6 mA
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 9.
Collector current as a function of
collector-emitter voltage; typical values
Fig 10.
Equivalent on-resistance as a function of
collector current; typical values
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
8 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 11.
BISS transistor switching time definition
V
V
CC
BB
R
R
C
B
V
o
(probe)
(probe)
oscilloscope
450
Ω
oscilloscope
450
Ω
R2
V
DUT
I
R1
mlb826
V
CC
= 10 V; I
C
= 0.5 A; I
Bon
= 25 mA; I
Boff
=
−
25 mA
Fig 12.
Test circuit for switching times
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
9 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
8. Package
outline
Plastic surface-mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT666
Fig 13.
Package outline SOT666
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
10 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
9. Packing
information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
Packing quantity
4000
PBSS4160V
SOT666
4 mm pitch, 8 mm tape and reel
-115
[1] For
further information and the availability of packing methods, see
Section 12
.
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
11 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
10. Revision history
Table 9.
Revision history
Document ID
PBSS4160V_3
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20091211
Product data sheet
–
PBSS4160V_2
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
T
a
ble 2 “Discrete pinning”
: updated
•
Figure 13 “Package outline SOT666”
: updated
PBSS4160V_2
PBSS4160V_1
20050131
Product data sheet
–
PBSS4160V_1
–
20040423
Objective data sheet
–
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
12 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
11. Legal
information
11.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
PBSS4160V_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
13 of 14
PBSS4160V
NXP Semiconductors
60
V
, 1 A
N
PN low V
CEsat
(BISS) transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
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Quick reference data
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2
Pinning informatio
n
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Ordering informatio
n
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Markin
g
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Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
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Thermal characteristics
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Characteristic
s
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Package outline . . . . . . . . . . . . . . . . . . . . . . . .
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Packing information
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Revision histor
y
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2
3
4
5
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7
8
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10
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Legal information. . . . . . . . . . . . . . . . . . . . . . .
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Data sheet status . . . . . . . . . . . . . . . . . . . . . .
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Definition
s
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3
Disclaimer
s
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Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
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11.1
11.2
11.3
11.4
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Contact information. . . . . . . . . . . . . . . . . . . . .
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Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2009.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 December 2009
Document identifier: PBSS4160V_3
