Nexperia-PBSS4350D-135
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DISCRETE SEMICONDUCTORS
DATA SHEET
age
PBSS4350D
50 V low V
CEsat
NPN transistor
Product data sheet
2001 Jul 13
Supersedes data of 2001 Jan 26
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
FEATURES
QUICK REFERENCE DATA
•
Low collector-emitter saturation voltage
•
High current capability
SYMBOL
V
CEO
PARAMETER
MAX. UNIT
collector-emitter voltage
peak collector current
equivalent on-resistance
50
V
•
Improved device reliability due to reduced heat
generation
I
CM
5
A
R
CEsat
<145
m
Ω
•
Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
PINNING
PIN
DESCRIPTION
APPLICATIONS
1
2
3
4
5
6
collector
collector
base
•
Supply line switching circuits
•
Battery management applications
•
DC/DC convertor applications
•
Strobe flash units
emitter
collector
collector
•
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
handbook, halfpage
6
5
2
4
3
1, 2, 5, 6
NPN low V
CEsat
transistor in a SOT457 (SC-74) plastic
package. PNP complement: PBSS5350D.
3
MARKING
4
1
TYPE NUMBER
PBSS4350D
MARKING CODE
Top view
MAM436
43
Fig.1 Simplified
outline (SOT457; SC-74) and
symbol.
2001 Jul 13
2
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
60
UNIT
V
CBO
V
CEO
V
EBO
I
C
−
−
−
−
−
−
−
−
V
V
V
A
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
50
open collector
6
3
I
CM
5
I
BM
1
P
tot
total power dissipation
T
amb
≤
25
°
C; note 1
T
amb
≤
25
°
C; note 2
600
750
+150
150
+150
mW
mW
°
C
T
stg
T
j
storage temperature
−
65
−
junction temperature
°
C
T
amb
operating ambient temperature
−
65
°
C
Notes
1. Device
mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
2. Device
mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
208
UNIT
K/W
K/W
R
th j-a
thermal resistance from junction to
ambient
160
Notes
1. Device
mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
2. Device
mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm
2
.
2001 Jul 13
3
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V
CB
= 50 V; I
E
= 0
MIN.
TYP. MAX. UNIT
I
CBO
collector-base cut-off current
−
−
100
50
nA
μ
A
nA
V
CB
= 50 V; I
E
= 0; T
j
= 150
°
C
V
EB
= 5 V; I
C
= 0
−
−
I
EBO
h
FE
emitter-base cut-off current
DC current gain
−
−
100
−
V
CE
= 2 V; I
C
= 500 mA
V
CE
= 2 V; I
C
= 1 A; note 1
V
CE
= 2 V; I
C
= 2 A; note 1
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 50 mA
200
200
100
−
−
−
−
−
−
V
CEsat
collector -emitter saturation
voltage
−
90
mV
mV
mV
m
Ω
V
−
−
170
290
<145
1.2
1.1
−
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
−
−
R
CEsat
V
BEsat
V
BEon
f
T
equivalent on-resistance
−
110
−
base-emitter saturation voltage
I
C
= 2 A; I
B
= 200 mA; note 1
−
base-emitter turn-on voltage
transition frequency
V
CE
= 2 V; I
C
= 1 A; note 1
−
−
V
I
C
= 100 mA; V
CE
= 5 V; f = 100 MHz
100
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
−
MHz
pF
C
c
collector capacitance
−
−
30
Note
1. Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
2001 Jul 13
4
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
MGW176
MGW175
1.2
600
handbook, halfpage
handbook, halfpage
V
BE
(V)
h
FE
1.0
500
(1)
(1)
(2)
0.8
0.6
0.4
0.2
0
400
(2)
300
(3)
200
(3)
100
0
−
1
2
3
I
4
−
1
2
3
I
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
C
V
CE
= 2 V.
(1)
T
amb
=
−
55
°
C.
V
CE
= 2 V.
(1) T
amb
= 150
°
C.
(2)
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(2) T
amb
= 25 C.
(3) T
amb
= 150
°
C.
T
Fig.3 Base-emitter
voltage as a function of
collector-current; typical values.
Fig.2 DC
current gain; typical values.
MGW178
MGW181
3
1.2
10
handbook, halfpage
handbook, halfpage
V
BEsat
(V)
V
CEsat
1.0
(mV)
(1)
2
0.8
10
(2)
(1)
(3)
0.6
(2)
(3)
0.4
10
0.2
1
10
0
10
−
1
2
3
I
4
−
1
2
3
I
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
I
C
/I
B
= 20.
I
C
/I
B
= 20.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
Fig.4 Collector-emitter
saturation as a function of
collector current; typical values.
Fig.5 Base-emitter
saturation voltage as a
function of collector current; typical values.
2001 Jul 13
5
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
MGW180
(2)
MGW179
1200
5
handbook, halfpage
(1)
handbook, halfpage
I
(3)
(4)
(5)
C
I
C
(mA)
(1)
(A)
1000
(2)
(3)
(6)
(7)
4
(8)
(9)
(4)
(5)
(6)
(7)
(8)
800
600
400
200
0
3
2
(10)
(9)
(10)
(11)
(12)
1
0
0
0
0.4
0.8
1.2
1.6
2
0.4
0.8
1.2
1.6
2
V
(V)
V
(V)
CE
CE
V
CE
= 5 V.
V
CE
= 5 V.
(5)
(6) I
B
= 2.31 nA.
(7)
B
= 1.98 nA.
(8) I
B
= 1.65 nA.
I
B
= 2.64 nA.
(9) I
B
= 1.32 nA.
(10) I
B
= 0.99 nA.
(11) I
B
= 0.66 nA.
(12) I
B
= 0.33 nA.
(1) I
B
= 3.96 nA.
(2)
B
= 3.63 nA.
(3) I
B
= 3.30 nA.
(4) I
B
= 2.97 mA.
(1)
(2)
I
B
= 150 mA.
B
= 135 mA.
(5) I
B
= 90 mA.
(6) I
B
= 75 mA.
(7) I
B
= 60 mA.
(8) I
B
= 45 mA.
(9) I
B
= 30 mA.
(10) I
B
= 15 mA.
I
I
I
(3) I
B
= 120 mA.
(4) I
B
= 105 mA.
Fig.6 Collector
current as a function of
collector-emitter voltage; typical values.
Fig.7 Collector
current as a function of
collector-emitter voltage; typical values.
MGW182
3
10
handbook, halfpage
R
CEsat
(
Ω
)
2
10
10
1
(1)
(2)
−
1
−
2
(3)
10
10
−
1
2
3
I
4
10
1
10
10
10
10
(mA)
C
I
C
/I
B
= 20.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
Fig.8 Collector-emitter
equivalent on-resistance
as a function of collector current; typical
values.
2001 Jul 13
6
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M
B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2001 Jul 13
7
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Jul 13
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp9
Date of release: 2001 Jul 13
Document order number:
9397 750 08426
