Nexperia-PBSS4360XX
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PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
9 June 2017
Product data sheet
1. General
description
NPN low V
CEsat
Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)
flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360X
2. Features
and benefits
•
Low collector-emitter saturation voltage V
CEsat
•
•
•
High collector current capability I
C
and I
CM
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
4. Quick
reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
CEO
collector-emitter
voltage
open base
–
–
60
V
I
C
collector current
–
–
–
–
–
–
3
A
I
CM
peak collector current
single pulse; t
p
≤ 1
ms
6
A
R
CEsat
collector-emitter
I
C
= 2 A; I
B
= 200 mA; T
amb
= 25 °C
140
mΩ
saturation resistance
[1] Pulse
test: t
p
≤ 300 µs; δ ≤ 0.02
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
5. Pinning
information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
E
C
B
emitter
collector
base
C
2
B
3
3
2
1
E
SOT89
sym123
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS4360X
SOT89
plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5
mm x 2.5 mm x 1.5 mm body
SOT89
7. Marking
Table 4. Marking codes
Type number
Marking code
PBSS4360X
S40
©
PBSS4360X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
2 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Conditions
Min
Max
80
Unit
V
collector-base voltage
open emitter
–
collector-emitter voltage
open base
–
60
V
emitter-base voltage
collector current
open collector
–
7
V
–
3
A
I
CM
peak collector current
base current
single pulse; t
p
≤ 1
ms
–
6
A
I
B
–
500
1
mA
A
I
BM
peak base current
total power dissipation
single pulse; t
p
≤ 1
ms
T
amb
≤ 25
°C
–
P
tot
–
500
950
1.35
150
150
150
mW
mW
W
–
–
T
j
junction temperature
ambient temperature
storage temperature
–
°C
°C
°C
T
amb
T
stg
-55
-65
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 1 cm
2
.
[3] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 6 cm
2
.
aaa-026758
1.5
(1)
P
tot
(W)
1.2
(2)
(3)
0.9
0.6
0.3
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, single-sided copper, 6 cm
2
(2) FR4 PCB, single-sided copper, 1 cm
2
(3) FR4 PCB, single-sided copper, standard footprint
Fig. 1.
Power derating curves
©
PBSS4360X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
3 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
250
132
93
Unit
K/W
K/W
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
–
–
–
–
–
–
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm
2
.
[3] Device
mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm
2
.
006aac680
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.2
0.1
0.05
0.02
10
0.01
1
0
– 1
10
– 5
– 4
– 3
10
– 2
– 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac681
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
– 1
10
– 5
– 4
– 3
10
– 2
– 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm
2
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4360X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
4 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
006aac682
3
10
Z
th(j-a)
(K/W)
2
duty cycle = 1
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
– 1
10
– 5
– 4
– 3
10
– 2
– 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm
2
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4360X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
5 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
I
CBO
collector-base cut-off
current
V
CB
= 48 V; I
E
= 0 A; T
amb
= 25 °C
V
CB
= 48 V; I
E
= 0 A; T
j
= 150 °C
–
–
–
–
–
–
µA
I
CES
I
EBO
h
FE
collector-emitter cut-off
V
CE
= 48 V; V
BE
= 0 V; T
amb
= 25 °C
current
100
nA
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C
–
–
100
nA
DC current gain
V
CE
= 5 V; I
C
= 50 mA; T
amb
= 25 °C
V
CE
= 5 V; I
C
= 500 mA; T
amb
= 25 °C
V
CE
= 5 V; I
C
= 1 A; T
amb
= 25 °C
V
CE
= 5 V; I
C
= 2 A; T
amb
= 25 °C
V
CE
= 5 V; I
C
= 3 A; T
amb
= 25 °C
200
–
–
–
–
–
–
–
–
–
–
–
200
–
200
–
120
–
75
–
–
V
CEsat
collector-emitter
saturation voltage
75
150
275
400
140
mV
mV
mV
mV
mΩ
I
C
= 1 A; I
B
= 100 mA; T
amb
= 25 °C
I
C
= 2 A; I
B
= 200 mA; T
amb
= 25 °C
I
C
= 3 A; I
B
= 300 mA; T
amb
= 25 °C
I
C
= 2 A; I
B
= 200 mA; T
amb
= 25 °C
–
–
–
R
CEsat
V
BEsat
V
BEon
f
T
collector-emitter
saturation resistance
–
base-emitter saturation
I
C
= 1 A; I
B
= 100 mA; T
amb
= 25 °C
voltage
[1]
–
–
1.2
1.1
–
V
base-emitter turn-on
voltage
V
CE
= 5 V; I
C
= 1 A; T
amb
= 25 °C
–
–
V
transition frequency
V
CE
= 10 V; I
C
= 50 mA; f = 100 MHz;
T
amb
= 25 °C
75
–
145
11
MHz
pF
C
c
collector capacitance
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
14
[1] Pulse
test: t
p
≤ 300 µs; δ ≤ 0.02
©
PBSS4360X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
6 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
aaa-011003
aaa-011004
800
3
2
1
0
16.2
14.4
12.6
10.8
I
= 18 mA
B
h
FE
I
C
(A)
600
(1)
(2)
9
7.2
5.4
3.6
400
200
0
(3)
1.8
-1
10
2
3
4
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
C
V
CE
(V)
V
CE
= 5 V
T
amb
= 25 °C
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 6.
Collector current as a function of collector-
emitter voltage; typical values
Fig. 5.
DC current gain as a function of collector
current; typical values
aaa-011005
aaa-011006
1.2
1.2
V
BEsat
(V)
V
BE
(V)
1.0
0.8
0.6
0.4
0.2
0.8
(1)
(2)
(3)
(1)
(2)
(3)
0.4
0
-1
10
2
3
4
-1
10
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
V
CE
= 5 V
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7.
Base-emitter voltage as a function of collector
Fig. 8.
Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
©
PBSS4360X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
7 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
aaa-011007
aaa-011008
3
1
10
R
CEsat
(Ω)
V
(1)
(2)
(3)
CEsat
(V)
2
10
-1
10
10
10
10
(1)
(2)
(3)
1
-2
-1
10
10
-3
-1
10
-2
2
3
4
-1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
I
C
/I
B
= 20
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 10.
Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBSS4360X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
8 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
11. Test
information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 – Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package
outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
1.5
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig. 11.
Package outline SOT89
©
PBSS4360X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
9 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
13. Soldering
4.75
2.25
2
1.9
1.2
0.2
solder lands
solder resist
0.85
1.7
1.2
4.6
4.85
solder paste
occupied area
0.5
1
1.1
(3×)
(2×)
Dimensions in mm
1.5
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig. 12.
Reflow soldering footprint for SOT89
6.6
2.4
3.5
solder lands
solder resist
7.6
0.5
occupied area
1.8
Dimensions in mm
(2×)
preferred transport direction during soldering
1.9
1.9
1.5
(2×)
0.7
5.3
sot089_fw
Fig. 13.
Wave soldering footprint for SOT89
©
PBSS4360X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
10 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
14. Revision
history
Table 8. Revision history
Data sheet ID
Release date
20170609
Data sheet status
Change notice
Supersedes
PBSS4360X v.1
Product data sheet
–
–
©
PBSS4360X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
11 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale
of Nexperia.
15. Legal
information
Right to make changes
— Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Suitability for use in automotive applications
— This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Document
Product
Definition
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Definitions
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Terms and conditions of commercial sale
— Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Disclaimers
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
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— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
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Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’ aggregate and cumulative liability towards customer
©
PBSS4360X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
12 / 13
Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
16. Contents
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 9 June 2017
©
PBSS4360X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
9 June 2017
13 / 13
