Nexperia-PBSS5220T-215
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DISCRETE SEMICONDUCTORS
DATA SHEET
ge
PBSS5220T
20 V, 2 A
PNP low V
CEsat
(BISS) transistor
Product data sheet
2003 Dec 18
NXP Semiconductors
Product data sheet
20
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5220T
FEATURES
QUICK REFERENCE DATA
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability: I
C
and I
CM
•
Higher efficiency leading to less heat generation
•
Reduced printed-circuit board requirements
SYMBOL
V
CEO
I
C
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−
20
−
2
V
A
I
CM
−
3
A
•
Cost effective alternative to MOSFETs in specific
applications.
R
CEsat
113
m
Ω
PINNING
APPLICATIONS
PIN
1
DESCRIPTION
•
Power management
– DC/DC
converters
– Supply
line switching
– Battery
charger
base
2
emitter
collector
3
– LCD
backlighting.
•
Peripheral drivers
– Driver
in low supply voltage applications (e.g. lamps
and LEDs)
handbook, halfpage
3
3
2
– Inductive
load driver (e.g. relays,
buzzers and motors).
1
DESCRIPTION
1
2
PNP BISS transistor in a SOT23 plastic package offering
ultra low V
CEsat
and R
CEsat
parameters.
Top view
MAM256
MARKING
TYPE NUMBER
PBSS5230T
MARKING CODE
(1)
Fig.1 Simplified
outline (SOT23) and symbol.
3F*
Note
1. *
= p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
NAME
VERSION
PBSS5220T
−
SOT23
2003 Dec 18
2
NXP Semiconductors
Product data sheet
20
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5220T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−
20
UNIT
V
CBO
V
CEO
V
EBO
I
C
−
−
−
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
open base
−
20
−
5
open collector
−
2
I
CM
single peak
−
3
I
B
−
300
300
480
150
+150
+150
mA
mW
mW
°
C
P
tot
total power dissipation
T
amb
≤
25
°
C; note 1
T
amb
≤
25
°
C; note 2
T
j
junction temperature
T
amb
T
stg
operating ambient temperature
storage temperature
−
65
−
65
°
C
°
C
Notes
1. Device
mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device
mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
417
UNIT
K/W
K/W
R
th j-a
thermal resistance from junction to ambient
260
Notes
1. Device
mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device
mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
2
.
2003 Dec 18
3
NXP Semiconductors
Product data sheet
20
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5220T
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified
SYMBOL
PARAMETER
collector-base cut-off current
V
CB
=
−
20 V; I
E
= 0
V
CB
=
−
20 V; I
E
= 0; T
j
= 150
°
C
V
EB
=
−
5 V; I
C
= 0
CONDITIONS
MIN.
TYP. MAX. UNIT
I
CBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
−
50
−
100
−
nA
μ
A
nA
−
I
EBO
h
FE
emitter-base cut-off current
DC current gain
−
V
CE
=
−
2 V; I
C
=
−
100 mA
V
CE
=
−
2 V; I
C
=
−
500 mA
225
225
200
150
−
−
V
CE
=
−
2 V; I
C
=
−
1 A; note 1
V
CE
=
−
2 V; I
C
=
−
2 A; note 1
I
C
=
−
500 mA; I
B
=
−
50 mA
I
C
=
−
1A; I
B
=
−
50 mA
−
−
V
CEsat
collector-emitter saturation
voltage
−
80
−
150
−
250
−
225
113
−
1.1
mV
mV
mV
mV
m
Ω
V
−
I
C
=
−
2A; I
B
=
−
100 mA; note 1
I
C
=
−
2A; I
B
=
−
200 mA; note 1
I
C
=
−
2 A; I
B
=
−
200 mA; note 1
I
C
=
−
2 A; I
B
=
−
100 mA; note 1
−
−
R
CEsat
V
BEsat
equivalent on-resistance
−
base-emitter saturation
voltage
−
V
BEon
f
T
base-emitter turn on voltage
V
CE
=
−
2 V; I
C
=
−
1 A; note 1
−
1.2
−
−
−
−
V
transition frequency
collector capacitance
V
CE
=
−
5 V; I
C
=
−
100 mA; f = 100 MHz
100
−
MHz
pF
C
c
V
CB
=
−
10 V; I
E
= I
e
= 0; f = 1 MHz
−
50
Note
1. Pulse
test: t
p
≤
300
μ
s,
δ ≤
0.02.
2003 Dec 18
4
NXP Semiconductors
Product data sheet
20
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5220T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w
M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2003 Dec 18
5
NXP Semiconductors
Product data sheet
20
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5220T
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Dec 18
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/01/pp7
Date of release: 2003 Dec 18
Document order number:
9397 750 11902
