Nexperia-PBSS5250X-115
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS5250X
50 V, 2 A
PNP low V
CEsat
(BISS) transistor
Product data sheet
2004 Nov 04
Supersedes data of 2003 Jun 17
NXP Semiconductors
Product data sheet
50
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250X
FEATURES
QUICK REFERENCE DATA
•
SOT89 (SC-62) package
SYMBOL
V
CEO
I
C
PARAMETER
MAX. UNIT
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability: I
C
and I
CM
•
Higher efficiency leading to less heat generation
•
Reduced printed-circuit board requirements.
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−
50
−
2
V
A
I
CM
−
5
A
R
CEsat
160
m
Ω
PINNING
APPLICATIONS
•
Power management
– DC/DC
converters
– Supply
line switching
– Battery
charger
PIN
1
DESCRIPTION
emitter
collector
base
2
3
– LCD
backlighting.
•
Peripheral drivers
– Driver
in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive
load driver (e.g. relays,
buzzers and motors).
2
1
3
DESCRIPTION
PNP low V
CEsat
transistor in a SOT89 plastic package.
NPN complement: PBSS4250X.
sym079
3
2
1
MARKING
Fig.1 Simplified
outline (SOT89) and symbol.
TYPE NUMBER
PBSS5250X
Note
MARKING CODE
(1)
*1L
1. *
= p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
2004 Nov 04
2
NXP Semiconductors
Product data sheet
50
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250X
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
PBSS5250X
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−
50
UNIT
V
CBO
V
CEO
V
EBO
I
C
−
−
−
−
−
−
V
V
V
A
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
open base
−
50
−
5
open collector
−
2
I
CM
T
j(max)
−
5
I
B
−
0.5
P
tot
total power dissipation
T
amb
≤
25
°
C
note 1
−
−
550
1
mW
W
note 2
T
stg
T
j
storage temperature
junction temperature
ambient temperature
−
65
−
+150
150
+150
°
C
°
C
°
C
T
amb
−
65
Notes
1. Device
mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device
mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
2004 Nov 04
3
NXP Semiconductors
Product data sheet
50
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
note 1
note 2
note 3
note 4
225
125
90
K/W
K/W
K/W
K/W
K/W
80
R
th(j-s)
thermal resistance from junction to soldering point
16
Notes
1. Device
mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device
mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
3. Device
mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
2
.
4. Device
mounted on a ceramic printed-circuit board 7 cm
2
, single-sided copper, tin-plated.
006aaa243
3
10
Z
duty cycle =
1.00
th(j-a)
(K/W)
0.75
0.50
0.33
0.20
2
10
0.10
0.05
10
0.02
0.01
1
0
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; standard footprint.
Fig.2 Transient
thermal impedance as a function of pulse time; typical values.
2004 Nov 04
4
NXP Semiconductors
Product data sheet
50
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250X
006aaa244
3
10
Z
th(j-a)
(K/W)
duty cycle =
1.00
2
10
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
1
0
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
2
.
Fig.3 Transient
thermal impedance as a function of pulse time; typical values.
006aaa245
3
10
Z
th(j-a)
(K/W)
duty cycle =
1.00
2
10
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
1
0
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
2
.
Fig.4 Transient
thermal impedance as a function of pulse time; typical values.
2004 Nov 04
5
NXP Semiconductors
Product data sheet
50
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250X
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V
CB
=
−
50 V; I
E
= 0 A
V
CB
=
−
50 V; I
E
= 0 A; T
j
= 150
°
C
collector-emitter cut-off current
V
CE
=
−
50 V; V
BE
= 0 V
MIN.
MAX.
−
100
UNIT
nA
I
CBO
collector-base cut-off current
−
−
−
−
−
50
μ
A
nA
nA
I
CES
I
EBO
h
FE
−
100
−
100
emitter-base cut-off current
DC current gain
V
EB
=
−
5 V; I
C
= 0 A
V
CE
=
−
2 V
I
C
=
−
0.1 A
200
200
200
100
−
−
I
C
=
−
0.5 A
−
I
C
=
−
1 A; note 1
−
I
C
=
−
2 A; note 1
−
V
CEsat
collector-emitter saturation
voltage
I
C
=
−
0.5 A; I
B
=
−
50 mA
I
C
=
−
1 A; I
B
=
−
50 mA
I
C
=
−
2 A; I
B
=
−
100 mA
I
C
=
−
2 A; I
B
=
−
200 mA; note 1
I
C
=
−
2 A; I
B
=
−
200 mA; note 1
−
90
−
250
−
380
−
320
160
−
1.1
−
mV
mV
mV
mV
m
Ω
V
−
−
−
R
CEsat
V
BEsat
V
BEon
f
T
equivalent on-resistance
−
base-emitter saturation voltage
I
C
=
−
2 A; I
B
=
−
100 mA
−
base-emitter turn-on voltage
transition frequency
V
CE
=
−
2 V; I
C
=
−
1 A
−
1.1
100
V
I
C
=
−
100 mA; V
CE
=
−
5 V;
−
MHz
f = 100 MHz
C
c
collector capacitance
V
CB
=
−
10 V; I
E
= i
e
= 0 A; f = 1 MHz
−
35
pF
Note
1. Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
2004 Nov 04
6
NXP Semiconductors
Product data sheet
50
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250X
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-08-03
06-03-16
SOT89
TO-243
SC-62
2004 Nov 04
7
NXP Semiconductors
Product data sheet
50
V
, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250X
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Nov 04
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp9
Date of release: 2004 Nov 04
Document order number:
9397 750 13886
