Nexperia-PDTB143ET235
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PDTB1xxxT series
500 mA, 50 V PNP resistor-equipped transistors
Rev. 1 — 13 May 2014
Product data sheet
1. Product
profile
1.1 General
description
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Type number
Package
NPN
Package
complement
configuration
N
experia
JEITA
JEDEC
PDTB143ET
PDTB143XT
PDTB114ET
SOT23
TO-236AB
–
PDTD143ET
PDTD143XT
PDTD114ET
small
1.2 Features
500 mA output current capability
Built-in bias resistors
10 % resistor ratio tolerance
AEC-Q101 qualified
Simplifies circuit design
Reduces component count
High temperature applications
up to 175 °C
1.3 Applications
IC inputs control
Switching loads
Cost-saving alternative to BC807 or
BC817 series transistors in digital
applications
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
1.4 Quick
reference data
Table 2.
Symbol
V
CEO
I
O
Quick reference data
Parameter
Conditions
Min
Typ
Max
50
Unit
V
collector-emitter voltage
output current
open base
–
–
–
–
500
mA
R1
bias resistor 1 (input)
PDTB143ET
4.7
4.7
10
k
k
k
PDTB143XT
PDTB114ET
R2
bias resistor 2 (base-emitter)
PDTB143ET
4.7
10
10
k
k
k
PDTB143XT
PDTB114ET
2. Pinning
information
Table 3.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
input (base)
3
3
2
2
GND (emitter)
output (collector)
R1
1
3
R2
1
2
sym003
3. Ordering
information
Table 4.
Ordering information
Type number
Package
Name
Description
plastic surface-mounted package; 3 leads
Version
PDTB1xxxT series
TO-236AB
SOT23
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
2 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
4. Marking
Table 5.
Marking codes
Type number
PDTB143ET
PDTB143XT
PDTB114ET
Marking code
[1]
*4X
*4Y
*09
[1] *
= placeholder for manufacturing site code
5. Limiting
values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
Parameter
Conditions
open emitter
open base
Min
Max
50
50
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
PDTB143ET
–
–
V
CEO
V
V
EBO
open collector
–
–
–
10
7
V
V
V
PDTB143XT
PDTB114ET
10
V
I
input voltage
PDTB143ET
30
30
50
–
+10
+7
V
PDTB143XT
V
PDTB114ET
+10
500
320
460
175
+175
+175
V
I
O
output current
mA
mW
mW
C
C
C
[1]
[2]
P
tot
total power dissipation
T
amb
25
C
–
–
T
j
junction temperature
ambient temperature
storage temperature
–
T
amb
T
stg
55
55
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device
mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
3 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
aaa-012834
500
tot
P
(1)
(2)
(mW)
400
300
200
100
0
-75
25
125
225
T
(°C)
amb
(1) FR4
PCB, 4-layer copper, standard footprint
(2) FR4
PCB, single-sided copper, standard footprint.
Fig 1.
Power derating curves
6. Thermal
characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min Typ Max
Unit
[1]
thermal resistance from junction
in free air
to ambient
–
–
–
–
470
327
K/W
K/W
[2]
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
4 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
aaa-012060
3
10
duty cycle = 1
Z
th(j-a)
0.75
0.5
(K/W)
0.33
2
10
0.2
0.1
0.05
10
0.02
0.01
1
0
-1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23/TO-236AB; typical values
aaa-012061
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
2
0.33
0.2
10
0.1
0.05
10
0.02
0.01
0
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23/TO-236AB; typical values
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
5 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
100
100
0.5
Unit
nA
I
CBO
collector-base cut-off
current
V
CB
=
40 V; I
E
= 0 A
V
CB
=
50 V; I
E
= 0 A
–
–
–
–
–
–
nA
I
CEO
I
EBO
collector-emitter cut-off
V
CE
=
50 V; I
B
= 0 A
current
A
emitter-base cut-off
current
V
EB
=
5 V; I
C
= 0 A
PDTB143ET
PDTB143XT
PDTB114ET
DC current gain
PDTB143ET
PDTB143XT
PDTB114ET
–
–
–
–
–
–
0.9
0.6
0.4
mA
mA
mA
h
FE
V
CE
=
5 V; I
C
=
50 mA
60
70
70
–
–
–
–
–
–
–
–
V
CEsat
V
I(off)
collector-emitter
saturation voltage
I
C
=
50 mA;
I
B
=
2.5 mA
100
mV
off-state input voltage
PDTB143ET
V
CE
=
5 V; I
C
=
100
A
0.6
0.5
0.6
0.9
1.5
V
V
V
PDTB143XT
0.75
1.1
PDTB114ET
1.0
1.5
V
I(on)
on-state input voltage
PDTB143ET
V
CE
=
0.3 V; I
C
=
20 mA
1.0
1.0
1.0
1.7
1.4
2.2
2.2
2.0
3.0
V
V
V
PDTB143XT
PDTB114ET
R1
bias resistor 1 (input)
PDTB143ET
3.3
3.3
7.0
4.7
4.7
10
6.1
6.1
13
k
k
k
PDTB143XT
PDTB114ET
R2/R1
bias resistor ratio
PDTB143ET
0.9
1.91
0.9
–
1.0
2.13
1.0
11
1.1
2.34
1.1
–
PDTB143XT
PDTB114ET
C
c
f
T
collector capacitance
V
CB
=
10 V;
I
E
= i
e
= 0 A; f = 1 MHz
pF
[1]
transition frequency
V
CE
=
5 V;
I
C
=
50 mA;
f = 100 MHz
–
140
–
MHz
[1] Characteristics
of built-in transistor.
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
6 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
aaa-012641
aaa-012633
3
-1
10
-10
(1)
(2)
h
FE
(1)
(2)
(3)
V
CEsat
(V)
(3)
2
10
10
-2
1
-10
-10
-1
2
3
2
3
-1
-10
-10
-10
-1
-10
-10
-10
I
(mA)
I
C
(mA)
C
V
CE
=
5 V
amb
= 100
C
I
C
/I
B
= 20
(1)
T
(1) T
amb
= 100
C
(2) T
amb
= 25
C
(3) T
amb
=
40
C
(2) T
amb
= 25
C
(3) T
amb
=
40
C
Fig 4.
PDTB143E
T
:
D
C current gain as a function of
collector current; typical values
Fig 5.
PDTB143E
T
:
C
ollector-emitter saturation
voltage as a function of collector current;
typical values
aaa-012644
aaa-012647
2
-10
-10
V
I(on)
(V)
V
I(off)
(V)
(1)
-10
(1)
(2)
(2)
(3)
-1
(3)
-1
-1
-1
-10
-10
-1
2
3
-1
-10
-1
-10
-10
-10
-10
-1
-10
I
C
(mA)
I (mA)
C
V
CE
=
0.3 V
V
CE
=
5 V
(1) T
amb
=
40
C
(2) T
amb
= 25
C
(1) T
amb
=
40
C
(2) T
amb
= 25
C
(3)
T
amb
= 100
C
(3) T
amb
= 100
C
Fig 6.
PDTB143E
T
:
O
n-state input voltage as a
function of collector current; typical values
Fig 7.
PDTB143E
T
:
O
ff-state input voltage as a
function of collector current; typical values
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
7 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
aaa-012628
aaa-012638
-0.5
20
-2.45
I
C
c
C
(A)
-2.2
(pF)
-1.95
-0.4
16
-1.7
-1.45
-0.3
-0.2
-0.1
0
12
8
-1.2
-0.95
-0.7
-0.45
4
I
B
= -0.2 mA
0
0
-1
-2
-3
-4
-5
0
-10
-20
-30
-40
V
-50
(V)
V
(V)
CE
CB
T
amb
= 25
C
f = 1 MHz; T
amb
= 25
C
Fig 8.
PDTB143E
T
:
C
ollector current as a function of
collector-emitter voltage; typical values
Fig 9.
PDTB143E
T
:
C
ollector capacitance as a
function of collector-base voltage; typical
values
aaa-012064
3
10
f
T
(MHz)
2
10
10
1
-10
-1
2
3
-1
-10
-10
-10
I
C
(mA)
V
CE
=
5 V; T
amb
= 25
C
Fig 10.
PDTB143E
T
: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
8 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
aaa-012642
aaa-012634
3
-1
10
-10
(1)
(2)
h
FE
(1)
(2)
(3)
V
CEsat
(V)
(3)
2
10
10
-2
1
-10
-10
-1
2
3
2
3
-1
-10
-10
-10
-1
-10
-10
-10
I
(mA)
I
C
(mA)
C
V
CE
=
5 V
amb
= 100
C
I
C
/I
B
= 20
(1)
T
(1) T
amb
= 100
C
(2) T
amb
= 25
C
(3) T
amb
=
40
C
(2) T
amb
= 25
C
(3) T
amb
=
40
C
Fig 11.
PDTB143X
T
:
D
C current gain as a function of
collector current; typical values
Fig 12.
PDTB143X
T
:
C
ollector-emitter saturation
voltage as a function of collector current;
typical values
aaa-012645
aaa-012648
2
-10
-10
V
I(on)
(V)
V
I(off)
(V)
(1)
-10
(1)
(2)
(2)
(3)
-1
(3)
-1
-1
-1
-10
-10
-1
2
3
-1
-10
-1
-10
-10
-10
-10
-1
-10
I
C
(mA)
I (mA)
C
V
CE
=
0.3 V
V
CE
=
5 V
(1) T
amb
=
40
C
(2) T
amb
= 25
C
(1) T
amb
=
40
C
(2) T
amb
= 25
C
(3)
T
amb
= 100
C
(3) T
amb
= 100
C
Fig 13.
PDTB143X
T
:
O
n-state input voltage as a
function of collector current; typical values
Fig 14.
PDTB143X
T
:
O
ff-state input voltage as a
function of collector current; typical values
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
9 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
aaa-012629
aaa-012639
-0.5
20
-2.8
I
C
c
C
(A)
(pF)
-2.55
-0.4
16
-2.3
-2.05
-1.8
-0.3
-0.2
-0.1
0
12
8
-1.55
-1.3
-1.05
-0.8
4
I
= -0.55 mA
B
0
0
-1
-2
-3
-4
-5
0
-10
-20
-30
-40
V
-50
(V)
V
(V)
CE
CB
T
amb
= 25
C
f = 1 MHz; T
amb
= 25
C
Fig 15.
PDTB143X
T
:
C
ollector current as a function of
collector-emitter voltage; typical values
Fig 16.
PDTB143X
T
:
C
ollector capacitance as a
function of collector-base voltage; typical
values
aaa-012064
3
10
f
T
(MHz)
2
10
10
1
-10
-1
2
3
-1
-10
-10
-10
I
C
(mA)
V
CE
=
5 V; T
amb
= 25
C
Fig 17.
PDTB143X
T
: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
10 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
aaa-012643
aaa-012635
3
-1
10
-10
(1)
(2)
h
FE
(1)
(2)
(3)
V
CEsat
(V)
(3)
2
10
10
-2
1
-10
-10
-1
2
3
2
3
-1
-10
-10
-10
-1
-10
-10
-10
I
(mA)
I
C
(mA)
C
V
CE
=
5 V
amb
= 100
C
I
C
/I
B
= 20
(1)
T
(1) T
amb
= 100
C
(2) T
amb
= 25
C
(3) T
amb
=
40
C
(2) T
amb
= 25
C
(3) T
amb
=
40
C
Fig 18.
PDTB114E
T
:
D
C current gain as a function of
collector current; typical values
Fig 19.
PDTB114E
T
:
C
ollector-emitter saturation
voltage as a function of collector current;
typical values
aaa-012646
aaa-012649
2
-10
-10
V
I(on)
(V)
V
I(off)
(V)
(1)
-10
(1)
(2)
(2)
(3)
-1
(3)
-1
-1
-1
-10
-10
-1
2
3
-1
-10
-1
-10
-10
-10
-10
-1
-10
I
C
(mA)
I (mA)
C
V
CE
=
0.3 V
V
CE
=
5 V
(1) T
amb
=
40
C
(2) T
amb
= 25
C
(1) T
amb
=
40
C
(2) T
amb
= 25
C
(3)
T
amb
= 100
C
(3) T
amb
= 100
C
Fig 20.
PDTB114E
T
:
O
n-state input voltage as a
function of collector current; typical values
Fig 21.
PDTB114E
T
:
O
ff-state input voltage as a
function of collector current; typical values
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
11 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
aaa-012630
aaa-012640
-0.5
40
-2.8
I
C
C
(pF)
c
(A)
-2.55
-0.4
-2.3
30
-2.05
-1.8
-0.3
-0.2
-0.1
0
-1.55
20
10
0
-1.3
-1.05
-0.8
I
B
= -0.55 mA
0
-1
-2
-3
-4
-5
0
-10
-20
-30
-40
V
-50
(V)
V
(V)
CE
CB
T
amb
= 25
C
f = 1 MHz; T
amb
= 25
C
Fig 22.
PDTB114E
T
:
C
ollector current as a function of
collector-emitter voltage; typical values
Fig 23.
PDTB114E
T
:
C
ollector capacitance as a
function of collector-base voltage; typical
values of built-in transistor
aaa-012064
3
10
f
T
(MHz)
2
10
10
1
-10
-1
2
3
-1
-10
-10
-10
I
C
(mA)
V
CE
=
5 V; T
amb
= 25
C
Fig 24.
PDTB114E
T
: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
12 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
8. Test
information
8.1 Quality
information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 – Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package
outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 25.
Package outline PDTB1xxxT series (SOT23/TO-236AB)
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
13 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3
×
)
(3
×
)
Dimensions in mm
0.5
(3
×
)
0.6
(3
×
)
1
sot023_fr
Dimensions in mm
Fig 26.
Reflow soldering footprint PDTB1xxxT series (SOT23/TO-236AB)
2.2
1.2
(2
×
)
1.4
(2
×
)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Dimensions in mm
Fig 27.
Wave soldering footprint PDTB1xxxT series (SOT23/TO-236AB)
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
14 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
11. Revision
history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PDTB1XXXT_SER v.1
20140513
Product data sheet
–
–
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
15 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Suitability for use in automotive applications —
This Nexperia
product has been qualified for use in automotive
12.2 Definitions
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Nexperia does not accept any liability related to any default,
12.3 Disclaimers
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the
customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever,
Nexperia’s
aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
Terms and conditions of commercial sale —
Nexperia
products are sold subject to the general terms and conditions of
unless otherwise agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and conditions of the
respective agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Right to make changes —
Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
16 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
For sales office addresses, please send an email to:
salesaddresses@
nexperia.com
PDTB1XXXT_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 13 May 2014
17 of 18
PDTB1xxxT series
Nexperia
500 mA, 50 V PNP resistor-equipped transistors
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . .
2
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . .
1
3
Quality information . . . . . . . . . . . . . . . . . . . . .
13
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
13
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
5
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
16
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
16
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
6
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
6
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
17
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
13 May 2014
