Nexperia-PDTC123TU-115

Part #Nexperia-PDTC123TU-115
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Nexperia-PDTC123TU-115
PDTC123T series  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
Rev. 01 — 10 March 2006  
Product data sheet  
1. Product
 
profile  
1.1 General
 
description  
NPN Resistor-Equipped
T
r
ansistors (RET) family in Surface Mounted Device (SMD)  
plastic packages.  
Table 1.  
Product overview  
Type number  
Package  
Philips  
SOT416  
SOT346  
SOT883  
SOT54  
PNP complement  
JEITA  
SC-75  
SC-59A  
SC-101  
SC-43A  
–
JEDEC  
PDTC123TE  
PDTC123TK  
PDTC123TM  
PDTC123TS

[1]  

PDTC123TT  
PDTC123TU  
–
PD
T
A
123TE  
PD
T
A
123TK  
PD
T
A
123TM  
PD
T
A
123TS  
PD
T
A
123TT  
PD
T
A
123TU  
TO-236  
–
TO-92  
SOT23  
TO-236AB  
–
SOT323  
SC-70  
[1] Also
 
available in SOT54A and SOT54 variant packages (see
Section 2
).  
1.2 Features  
I
Built-in bias resistors  
I
Reduces component count  
I
Simplifies circuit design  
I
100 mA output current capability  
I
Reduces pick and place costs  
1.3 Applications  
I
Digital applications  
I
Cost-saving alternative for BC847 series  
in digital applications  
I
Control of IC inputs  
I
Switching loads  
1.4 Quick
 
reference data  
Table 2.  
Symbol  
V

CEO  

I

O  

Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
V
collector-emitter voltage  
output current  
open base  
–
–
–
–
100  
2.86  
mA  
k
Ω
 
R1  
bias resistor 1 (input)  
1.54  
2.2  

PDTC123T series  
Philips Semiconductors  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
2. Pinning
 
information  
Table 3.  
Pinning  
Pin  
Description  
Simplified outline  
Symbol  
SOT54  
1
2
3
input (base)  
2
3
output (collector)  
GND (emitter)  
R1  
1
2
3
1
1
1
1
1
001aab347  
006aaa218  
SOT54A  
1
2
3
input (base)  
2
3
output (collector)  
GND (emitter)  
1
2
R1  
3
001aab348  
006aaa218  
SOT54 variant  
1
2
3
input (base)  
2
3
output (collector)  
GND (emitter)  
R1  
1
2
3
001aab447  
006aaa218  
SOT23; SOT323; SOT346; SOT416  
1
2
3
input (base)  
3
3
2
GND (emitter)  
output (collector)  
R1  
1
2
006aaa144  
sym012  
SOT883  
1
2
3
input (base)  
1
2
3
2
GND (emitter)  
output (collector)  
3
R1  
Transparent  
top view  
sym012  
©
PDTC123T_SER_1  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 01 — 10 March 2006  
2 of 10  

PDTC123T series  
Philips Semiconductors  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
3. Ordering
 
information  
Table 4.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
SOT416  
SOT346  
SOT883  
PDTC123TE  
PDTC123TK  
PDTC123TM  
SC-75  
plastic surface mounted package; 3 leads  
plastic surface mounted package; 3 leads  
SC-59A  
SC-101  
leadless ultra small plastic package; 3 solder lands;  
body 1.0
×
0.6
×
0.5 mm  
PDTC123TS

[1]  

SC-43A  
plastic single-ended leaded (through hole) package;  
3 leads  
SOT54  
PDTC123TT  
PDTC123TU  
–
plastic surface mounted package; 3 leads  
plastic surface mounted package; 3 leads  
SOT23  
SC-70  
SOT323  
[1] Also
 
available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9
).  
4. Marking  
Table 5.  
Marking codes  
Type number  
PDTC123TE  
PDTC123TK  
PDTC123TM  
PDTC123TS  
PDTC123TT  
PDTC123TU  
Marking code

[1]  

2B  
GB  
FB  
TC123T  
ZM*  
*1T  
[1] *
 
= -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
©
PDTC123T_SER_1  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 01 — 10 March 2006  
3 of 10  

PDTC123T series  
Philips Semiconductors  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
5. Limiting
 
values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

O  

Parameter  
Conditions  
open emitter  
open base  
Min  
Max  
50  
Unit  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
output current  
–
–
–
–
–
50  
V
open collector  
5
V
100  
100  
mA  
mA  
I

CM  

peak collector current  
single pulse;  
t

p

≤
1 ms  
P

tot  

total power dissipation  
SOT416  
T

amb

≤
25
°
C  
[1]  
[1]  
–
150  
250  
250  
500  
250  
200  
+150  
150  
+150  
mW  
mW  
mW  
mW  
mW  
mW  
°
C  
SOT346  
–
[2][3]  
[1]  
SOT883  
–
SOT54  
–
[1]  
SOT23  
–
[1]  
SOT323  
–
T

stg  

T

j  

storage temperature  
junction temperature  
ambient temperature  
−
65  
–
°
C  
T

amb  

−
65  
°
C  
[1] Device
 
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[2] Reflow
 
soldering is the only recommended soldering method.  
[3] Device
 
mounted on an FR4 PCB with 60
µ
m copper strip line, standard footprint.  
6. Thermal
 
characteristics  
Table 7.  
Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
R

th(j-a)  

thermal resistance from  
junction to ambient  
in free air  
[1]  
[1]  
SOT416  
SOT346  
SOT883  
SOT54  
–
–
–
–
–
–
–
–
–
–
–
–
833  
500  
500  
250  
500  
625  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
[2][3]  
[1]  
[1]  
SOT23  
[1]  
SOT323  
[1] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Reflow
 
soldering is the only recommended soldering method.  
[3] Device
 
mounted on an FR4 PCB with 60
µ
m copper strip line, standard footprint.  
©
PDTC123T_SER_1  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 01 — 10 March 2006  
4 of 10  

PDTC123T series  
Philips Semiconductors  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
7. Characteristics  
Table 8.  
Characteristics  
T

amb

= 25
°
C unless otherwise specified.  
Symbol Parameter
 
Conditions  
I

CBO

collector-base cut-off
 
V

CB

= 50 V; I

E

= 0 A  
current  
Min  
Typ  
Max  
Unit  
–
–
100  
nA  
I

CEO  

collector-emitter cut-off
 
V

CE

= 30 V; I

B

= 0 A  
–
–
–
–
1
µ
A  
µ
A  
current  
V

CE

= 30 V; I

B

= 0 A;  
50  
T

j

= 150
°
C  
I

EBO  

emitter-base cut-off  
current  
V

EB

= 5 V; I

C

= 0 A  
–
–
100  
nA  
h

FE  

DC current gain  
V

CE

= 5 V; I

C

= 20 mA  
I

C

= 10 mA; I

B

= 0.5 mA  
30  
–
–
–
–
V

CEsat  

collector-emitter  
150  
mV  
saturation voltage  
R1  
C

c  

bias resistor 1 (input)  
collector capacitance  
1.54  
–
2.2  
–
2.86  
2.5  
k
Ω  
V

CB

= 10 V; I

E

= i

e

= 0 A;  
f = 1 MHz  
pF  
006aaa696  
006aaa697  
500  
1
h
FE  
(1)  
(2)  
400  
300  
200  
100  
0
V
CEsat  
(V)  
−
1  
10  
(1)  
(2)  
(3)  
(3)  
−
2  
10  
−
1  
2
−
1  
2
10  
1
10  
10  
10  
1
10  
10  
I
(mA)  
I
(mA)  
C
C
V

CE

= 5 V  
I

C

/I

B

= 20  
(1) T

amb

= 100
°
C  
(2) T

amb

= 25
°
C  
(3) T

amb

=
−
40
°
C  
(1) T

amb

= 100
°
C  
(2) T

amb

= 25
°
C  
(3) T

amb

=
−
40
°
C  
Fig 1.
 
DC current gain as a function of collector  
current; typical values  
Fig 2.
 
Collector-emitter saturation voltage as a  
function of collector current; typical values  
©
PDTC123T_SER_1  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 01 — 10 March 2006  
5 of 10  

PDTC123T series  
Philips Semiconductors  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
8. Package
 
outline  
3.1  
2.7  
1.3  
1.0  
1.8  
1.4  
0.95  
0.60  
3
0.6  
0.2  
3
0.45  
0.15  
3.0 1.7  
2.5 1.3  
1.75 0.9  
1.45 0.7  
1
2
1
2
0.30  
0.15  
0.25  
0.10  
0.50  
0.35  
0.26  
0.10  
1.9  
1
Dimensions in mm  
04-11-04  
Dimensions in mm  
04-11-11  
Fig 3.
 
Package outline SOT416 (SC-75)  
Fig 4.
 
Package outline SOT346 (SC-59A/TO-236)  
0.62  
0.55  
0.50  
0.46  
0.55  
0.47  
0.45  
0.38  
4.2  
3.6  
3
0.30  
0.22  
0.48  
0.40  
1.02  
0.95  
0.65  
1
2
4.8  
4.4  
0.30  
0.22  
2.54  
1.27  
3
2
1
0.20  
0.12  
5.2  
5.0  
14.5  
12.7  
0.35  
Dimensions in mm  
03-04-03  
Dimensions in mm  
04-11-16  
Fig 5.
 
Package outline SOT883 (SC-101)  
Fig 6.
 
Package outline SOT54 (SC-43A/TO-92)  
0.45  
0.38  
0.45  
0.38  
4.2  
3.6  
4.2  
3.6  
1.27  
0.48  
0.40  
3 max  
1
2
3
2.5  
0.48  
max  
0.40  
1
4.8  
4.4  
2
5.08  
4.8  
4.4  
2.54  
1.27  
3
2.54  
5.2  
5.0  
14.5  
12.7  
5.2  
5.0  
14.5  
12.7  
Dimensions in mm  
04-06-28  
Dimensions in mm  
05-01-10  
Fig 7.
 
Package outline SOT54A  
Fig 8.
 
Package outline SOT54 variant  
©
PDTC123T_SER_1  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 01 — 10 March 2006  
6 of 10  

PDTC123T series  
Philips Semiconductors  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
3.0  
2.8  
1.1  
0.9  
2.2  
1.8  
1.1  
0.8  
0.45  
0.15  
3
3
0.45  
0.15  
2.5 1.4  
2.1 1.2  
2.2 1.35  
2.0 1.15  
1
2
1
2
0.4  
0.3  
0.25  
0.10  
0.48  
0.38  
0.15  
0.09  
1.9  
1.3  
Dimensions in mm  
04-11-04  
Dimensions in mm  
04-11-04  
Fig 9.
 
Package outline SOT23 (TO-236AB)  
Fig 10. Package outline SOT323 (SC-70)  
9. Packing
 
information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.

[1]  

Type number
 
Package  
Description  
Packing quantity  
3000  
5000 10000  
PDTC123TE  
PDTC123TK  
SOT416  
SOT346  
4 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel  
2 mm pitch, 8 mm tape and reel  
bulk, straight leads  
-115  
–
-135  
-135  
-315  
–
-115  
–
PDTC123TM SOT883  
–
–
PDTC123TS  
SOT54  
–
-412  
SOT54A  
tape and reel, wide pitch  
–
–
-116  
-126  
–
tape ammopack, wide pitch  
–
–
SOT54 variant
 
bulk, delta pinning  
–
-112  
PDTC123TT  
PDTC123TU  
SOT23  
4 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel  
-215  
-115  
–
–
-235  
-135  
SOT323  
[1] For
 
further information and the availability of packing methods, see
Section 12
.  
©
PDTC123T_SER_1  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 01 — 10 March 2006  
7 of 10  

PDTC123T series  
Philips Semiconductors  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
10. Revision history  
Table 10.
 
Revision history  
Document ID  
Release date  
20060310  
Data sheet status  
Change notice  
Supersedes  
PDTC123T_SER_1  
Product data sheet  
–
–
©
PDTC123T_SER_1  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 01 — 10 March 2006  
8 of 10  

PDTC123T series  
Philips Semiconductors  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
11. Legal information  
11.1 Data
 
sheet status  
Document status

[1][2]  

Product status

[3]  

Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet
 
Qualification  
Product [short] data sheet
 
Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL

malfunctio
n
o
f
a
P
hilip
s
p
roduc
t
c
a
n
r
easonabl
y
b
e
e
xpected  
11.2 Definitions  
to result in personal injur
y
,
d
eath or severe property or environmental  
damage. Philips accepts no liability for inclusion and/or use  
of Philips products in such equipment or applications and  
therefore such inclusion and/or use is for the customer’s own risk.  
Draft —
The document is a draft version onl
y
.
T
he content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Philips Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications —
Applications that are described herein for any of these  
products are for illustrative purposes onl
y
.
P
hilips Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet —
A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Philips Semiconductors  
sales office. In case of any inconsistency or conflict with the short data sheet,  
the full data sheet shall prevail.  
Limiting values —
Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliabilit
y
.  
Terms and conditions of sale —
Philips products are sold  
subject to the general terms and conditions of commercial sale, as published  
of liabilit
y
,
u
nless explicitly otherwise agreed to in writing by Philips  
Semiconductors. In case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter will prevail.  
11.3 Disclaimers  
General —
Information in this document is believed to be accurate and  
reliable. However, Philips Semiconductors does not give any representations  
or warranties, expressed or implied, as to the accuracy or completeness of  
such information and shall have no liability for the consequences of use of  
such information.  
No offer to sell or license —
Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes —
Philips Semiconductors reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use —
Philips products are not designed,  
authorized or warranted to be suitable for use in medical, militar
y
,
a
ircraft,  
space or life support equipment, nor in applications where failure or  
12. Contact information  
For additional information, please visit:
 

For sales office addresses, send an email to:
 

©
PDTC123T_SER_1  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 01 — 10 March 2006  
9 of 10  

PDTC123T series  
Philips Semiconductors  
NPN resistor-equipped transistors; R1 = 2.2 k
Ω
, R2 = open  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
 
1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . .
 
1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
1  
Applications .
 
. . . . . . . . . . . . . . . . . . . . . . . . . .
 
1  
Quick reference data. . . . . . . . . . . . . . . . . . . . .
 
1  
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
 
2  
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
 
3  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
 
4  
Thermal characteristics. . . . . . . . . . . . . . . . . . .
 
4  
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
 
5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
 
6  
Packing information. . . . . . . . . . . . . . . . . . . . . .
 
7  
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
 
8  
3
4
5
6
7
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
 
9  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
 
9  
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
9  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
9  
T
r
ademark
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
9  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . . .
 
9  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
10  

©

Nexperia B.V. 2017. All rights reserved  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release:
10 March 2006