Nexperia-PEMD30-315

Important notice  

Dear Customer,  

On 7 February 2017 the former NXP Standard Product business became a new company with the  

tradename

Nexperia

. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  

application markets  

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  

the references to Nexperia, as shown below.  

use

(email)  

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  

the version, as shown below:  

– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  

reserved  

Should be replaced with:  

–

© Nexperia B.V. (year). All rights reserved

.  

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  

or telephone (details via

). Thank you for your cooperation and  

understanding,  

Kind regards,  

Team Nexperia  

PEMD30; PUMD30  

NPN/PNP double resistor-equipped transistors;  

R1 = 2.2 k

Ω

, R2 = open  

Rev. 01 — 31 March 2006  

Product data sheet  

1. Product

 

profile  

1.1 General

 

description  

NPN/PNP double Resistor-Equipped

T

r

ansistors (RET) in Surface-Mounted Device (SMD)  

plastic packages.  

Table 1.  

Product overview  

Type number  

Package  

Philips  

PNP/PNP  

complement  

NPN/NPN  

complement  

JEITA  

–

PEMD30  

PUMD30  

SOT666  

SOT363  

PEMB30  

PUMB30  

PEMH30  

PUMH30  

SC-88  

1.2 Features  

I

100 mA output current capability  

I

Built-in bias resistors  

I

Reduces component count  

I

Reduces pick and place costs  

I

Simplifies circuit design  

1.3 Applications  

I

Low current peripheral driver  

I

Cost-saving alternative for BC847BPN  

and BC847BVN  

I

Control of IC inputs  

I

Switching loads  

1.4 Quick

 

reference data  

Table 2.  

Symbol  

Quick reference data  

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

Per transistor; for the PNP transistor with negative polarity  

V

CEO  

I

O  

collector-emitter voltage  

output current  

open base  

–

–

50  

V

–

–

100  

2.86  

mA  

k

Ω

 

R1  

bias resistor 1 (input)  

1.54  

2.2  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

2. Pinning

 

information  

Table 3.  

Pinning  

Pin  

1

Description  

Simplified outline  

Symbol  

GND (emitter) TR1  

input (base) TR1  

output (collector) TR2  

GND (emitter) TR2  

input (base) TR2  

output (collector) TR1  

6

5

4

6

5

4

2

3

R1  

4

TR2  

TR1  

5

1

2

3

R1  

6

001aab555  

1

2

3

006aaa269  

3. Ordering

 

information  

Table 4.  

Ordering information  

Type number  

Package  

Name  

–

Description  

Version  

SOT666  

SOT363  

PEMD30  

PUMD30  

plastic surface-mounted package; 6 leads  

plastic surface-mounted package; 6 leads  

SC-88  

4. Marking  

Table 5.  

Marking codes  

Type number  

PEMD30  

Marking code

[1]  

2U  

PUMD30  

*B3  

[1] *

 

= -: made in Hong Kong  

* = p: made in Hong Kong  

* = t: made in Malaysia  

* = W: made in China  

PEMD30_PUMD30_1  

© Koninklijke Philips Electronics N.

V

.

2

006. All rights reserved.  

Product data sheet  

Rev. 01 — 31 March 2006  

2 of 11  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

5. Limiting

 

values  

Table 6.  

Limiting values  

In accordance with the Absolute Maximum Rating System (IEC 60134).  

Symbol  

Parameter  

Conditions  

Min  

Max  

Unit  

Per transistor; for the PNP transistor with negative polarity  

V

CBO  

V

CEO  

V

EBO  

I

O  

collector-base voltage  

collector-emitter voltage  

emitter-base voltage  

output current  

open emitter  

open base  

–

–

–

–

–

50  

50  

V

V

open collector  

5

V

100  

100  

mA  

mA  

I

CM  

peak collector current  

single pulse;  

t

p

≤

1 ms  

P

tot  

total power dissipation  

SOT363  

T

amb

≤

25

°

C  

[1]  

–

–

200  

200  

mW  

mW  

[1][2]  

SOT666  

Per device  

P

tot  

total power dissipation  

SOT363  

T

amb

≤

25

°

C  

[1]  

–

300  

mW  

mW  

°

C  

[1][2]  

SOT666  

–

300  

T

stg  

T

j  

storage temperature  

junction temperature  

ambient temperature  

−

65  

–

+150  

150  

°

C  

T

amb  

−

65  

+150  

°

C  

[1] Device

 

mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  

footprint.  

[2] Reflow

 

soldering is the only recommended soldering method.  

6. Thermal

 

characteristics  

Table 7.  

Thermal characteristics  

Symbol Parameter  

Per transistor  

Conditions  

Min  

Typ  

Max Unit  

R

th(j-a)  

thermal resistance from  

in free air  

junction to ambient  

[1]  

SOT363  

–

–

–

–

625  

625  

K/W  

K/W  

[1][2]  

SOT666  

Per device  

R

th(j-a)  

thermal resistance from  

junction to ambient  

in free air  

[1]  

SOT363  

SOT666  

–

–

–

–

416  

416  

K/W  

K/W  

[1][2]  

[1] Device

 

mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  

[2] Reflow

 

soldering is the only recommended soldering method.  

PEMD30_PUMD30_1  

© Koninklijke Philips Electronics N.

V

.

2

006. All rights reserved.  

Product data sheet  

Rev. 01 — 31 March 2006  

3 of 11  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

7. Characteristics  

Table 8.  

Characteristics  

T

amb

= 25

°

C unless otherwise specified.  

Symbol Parameter

 

Conditions  

Per transistor; for the PNP transistor with negative polarity  

Min  

Typ  

Max Unit  

I

CBO  

collector-base cut-off  

current  

V

CB

= 50 V; I

E

= 0 A  

–

–

100  

nA  

I

CEO  

collector-emitter cut-off

 

V

CE

= 30 V; I

B

= 0 A  

–

–

–

–

1

µ

A  

µ

A  

current  

V

CE

= 30 V; I

B

= 0 A;  

50  

T

j

= 150

°

C  

I

EBO  

emitter-base cut-off  

current  

V

EB

= 5 V; I

C

= 0 A  

–

–

100  

nA  

h

FE  

DC current gain  

V

CE

= 5 V; I

C

= 20 mA  

I

C

= 10 mA; I

B

= 0.5 mA  

30  

–

–

–

–

V

CEsat  

collector-emitter  

150  

mV  

saturation voltage  

R1  

C

c  

bias resistor 1 (input)  

collector capacitance  

1.54 2.2  

2.86 k

Ω  

V

CB

= 10 V; I

E

= i

e

= 0 A;  

f = 1 MHz  

TR1 (NPN)  

TR2 (PNP)  

–

–

–

–

2.5  

3

pF  

pF  

PEMD30_PUMD30_1  

© Koninklijke Philips Electronics N.

V

.

2

006. All rights reserved.  

Product data sheet  

Rev. 01 — 31 March 2006  

4 of 11  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

006aaa696  

006aaa697  

500  

1

h

FE  

(1)  

(2)  

400  

V

CEsat  

(V)  

300  

200  

100  

0

−

1  

10  

(1)  

(2)  

(3)  

(3)  

−

2  

10  

−

1  

2

−

1  

2

10  

1

10  

10  

10  

1

10  

10  

I

(mA)  

I

(mA)  

C

C

V

CE

= 5 V  

I

C

/I

B

= 20  

(1) T

amb

= 100

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

=

−

40

°

C  

(1) T

amb

= 100

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

=

−

40

°

C  

Fig 1.

 

TR1 (NPN): DC current gain as a function of  

collector current; typical values  

Fig 2.

 

TR1 (NPN): Collector-emitter saturation voltage  

as a function of collector current; typical values  

006aaa691  

006aaa692  

500  

−

1  

h

FE  

(1)  

400  

V

CEsat  

(V)  

300  

200  

100  

0

(2)  

(3)  

−

1  

−

10  

(1)  

(2)  

(3)  

−

2  

−

10  

−

1  

2

−

1  

2

−

10  

−

1  

−

10  

−

10  

−

10  

−

1  

−

10  

−

10  

I

(mA)  

I (mA)  

C

C

V

CE

=

−

5 V  

I

C

/I

B

= 20  

(1) T

amb

= 100

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

=

−

40

°

C  

(1) T

amb

= 100

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

=

−

40

°

C  

Fig 3.

 

TR2 (PNP): DC current gain as a function of  

collector current; typical values  

Fig 4.

 

TR2 (PNP): Collector-emitter saturation voltage  

as a function of collector current; typical values  

PEMD30_PUMD30_1  

© Koninklijke Philips Electronics N.

V

.

2

006. All rights reserved.  

Product data sheet  

Rev. 01 — 31 March 2006  

5 of 11  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

8. Package

 

outline  

2.2  

1.8  

1.1  

0.8  

1.7  

1.5  

0.6  

0.5  

0.45  

0.15  

6

5

4

6

5

4

0.3  

0.1  

2.2 1.35  

2.0 1.15  

1.7 1.3  

1.5 1.1  

pin 1  

index  

pin 1 index  

1

2

3

1

2

3

0.25  

0.10  

0.3  

0.2  

0.18  

0.08  

0.27  

0.17  

0.65  

0.5  

1.3  

1

Dimensions in mm  

04-11-08  

Dimensions in mm  

04-11-08  

Fig 5.

 

Package outline SOT363 (SC-88)  

Fig 6.

 

Package outline SOT666  

9. Packing

 

information  

Table 9.  

Packing methods  

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]  

Type number

 

Package Description

 

Packing quantity  

3000 4000 8000 10000  

PEMD30  

SOT666 2

 

mm pitch, 8 mm tape and reel  

–

–

-315  

–

4 mm pitch, 8 mm tape and reel  

SOT363 4

 

mm pitch, 8 mm tape and reel; T1  

4 mm pitch, 8 mm tape and reel; T2  

–

-115  

–

–

–

–

[2]  

[3]  

PUMD30  

-115  

-125  

–

–

-135  

-165  

[1] For

 

further information and the availability of packing methods, see

Section 13

.  

[2] T1:

 

normal taping  

[3] T2:

 

reverse taping  

PEMD30_PUMD30_1  

© Koninklijke Philips Electronics N.

V

.

2

006. All rights reserved.  

Product data sheet  

Rev. 01 — 31 March 2006  

6 of 11  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

10. Soldering  

2.65  

0.60  

(2

×

)  

0.40  

(2

×

)  

2.35  

0.90 2.10  

0.50  

(4

×

)  

solder paste  

solder lands  

solder resist  

occupied area  

0.50  

(4

×

)  

1.20  

2.40  

MSA432  

Dimensions in mm  

Fig 7.

 

Reflow soldering footprint SOT363 (SC-88)  

5.25  

0.30 1.00 4.00  

4.50  

solder lands  

1.15  

3.75  

solder resist  

occupied area  

transport direction during soldering  

Dimensions in mm  

sot363  

Fig 8.

 

Wave soldering footprint SOT363 (SC-88)  

PEMD30_PUMD30_1  

© Koninklijke Philips Electronics N.

V

.

2

006. All rights reserved.  

Product data sheet  

Rev. 01 — 31 March 2006  

7 of 11  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

2.75  

2.45  

2.10  

1.60  

0.15  

(4

×

)  

0.40  

(6

×

)  

0.55  

(2

×

)  

0.30 (2

×

)  

2.00 1.70 1.00  

0.375  

(4

×

)  

1.20  

2.20  

2.50  

solder lands  

solder resist  

placement area  

occupied area  

0.075  

Dimensions in mm  

Reflow soldering is the only recommended soldering method.  

Fig 9.

 

Reflow soldering footprint SOT666  

PEMD30_PUMD30_1  

© Koninklijke Philips Electronics N.

V

.

2

006. All rights reserved.  

Product data sheet  

Rev. 01 — 31 March 2006  

8 of 11  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

11. Revision history  

Table 10.

 

Revision history  

Document ID  

Release date  

20060331  

Data sheet status  

Change notice  

Supersedes  

PEMD30_PUMD30_1  

Product data sheet  

–

–

PEMD30_PUMD30_1  

© Koninklijke Philips Electronics N.

V

.

2

006. All rights reserved.  

Product data sheet  

Rev. 01 — 31 March 2006  

9 of 11  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

12. Legal information  

12.1 Data

 

sheet status  

Document status

[1][2]  

Product status

[3]  

Development  

Definition  

Objective [short] data sheet  

This document contains data from the objective specification for product development.  

This document contains data from the preliminary specification.  

This document contains the product specification.  

Preliminary [short] data sheet

 

Qualification  

Product [short] data sheet

 

Production  

[1]  

[2]  

[3]  

Please consult the most recently issued document before initiating or completing a design.  

The term ‘short data sheet’ is explained in section “Definitions”.  

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  

information is available on the Internet at URL

malfunction of a Philips Semiconductors product can reasonably be expected  

12.2 Definitions  

to result in personal injur

y

,

d

eath or severe property or environmental  

damage. Philips Semiconductors accepts no liability for inclusion and/or use  

of Philips Semiconductors products in such equipment or applications and  

therefore such inclusion and/or use is for the customer’s own risk.  

Draft —

The document is a draft version onl

y

.

T

he content is still under  

internal review and subject to formal approval, which may result in  

modifications or additions. Philips Semiconductors does not give any  

representations or warranties as to the accuracy or completeness of  

information included herein and shall have no liability for the consequences of  

use of such information.  

Applications —

Applications that are described herein for any of these  

products are for illustrative purposes onl

y

.

P

hilips Semiconductors makes no  

representation or warranty that such applications will be suitable for the  

specified use without further testing or modification.  

Short data sheet —

A short data sheet is an extract from a full data sheet  

with the same product type number(s) and title. A short data sheet is intended  

for quick reference only and should not be relied upon to contain detailed and  

full information. For detailed and full information see the relevant full data  

sheet, which is available on request via the local Philips Semiconductors  

sales office. In case of any inconsistency or conflict with the short data sheet,  

the full data sheet shall prevail.  

Limiting values —

Stress above one or more limiting values (as defined in  

the Absolute Maximum Ratings System of IEC 60134) may cause permanent  

damage to the device. Limiting values are stress ratings only and operation of  

the device at these or any other conditions above those given in the  

Characteristics sections of this document is not implied. Exposure to limiting  

values for extended periods may affect device reliabilit

y

.  

Terms and conditions of sale —

Philips Semiconductors products are sold  

subject to the general terms and conditions of commercial sale, as published  

at

, including those  

of liabilit

y

,

u

nless explicitly otherwise agreed to in writing by Philips  

12.3 Disclaimers  

General —

Information in this document is believed to be accurate and  

reliable. However, Philips Semiconductors does not give any representations  

or warranties, expressed or implied, as to the accuracy or completeness of  

such information and shall have no liability for the consequences of use of  

such information.  

Semiconductors. In case of any inconsistency or conflict between information  

in this document and such terms and conditions, the latter will prevail.  

No offer to sell or license —

Nothing in this document may be interpreted  

or construed as an offer to sell products that is open for acceptance or the  

grant, conveyance or implication of any license under any copyrights, patents  

or other industrial or intellectual property rights.  

Right to make changes —

Philips Semiconductors reserves the right to  

make changes to information published in this document, including without  

limitation specifications and product descriptions, at any time and without  

notice. This document supersedes and replaces all information supplied prior  

to the publication hereof.  

12.4 Trademarks  

Notice: All referenced brands, product names, service names and trademarks  

are the property of their respective owners.  

Suitability for use —

Philips Semiconductors products are not designed,  

authorized or warranted to be suitable for use in medical, militar

y

,

a

ircraft,  

space or life support equipment, nor in applications where failure or  

13. Contact information  

For additional information, please visit:

 

For sales office addresses, send an email to:

 

PEMD30_PUMD30_1  

© Koninklijke Philips Electronics N.

V

.

2

006. All rights reserved.  

Product data sheet  

Rev. 01 — 31 March 2006  

10 of 11  

PEMD30; PUMD30  

Philips Semiconductors  

NPN/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω

, R2 = open  

14. Contents  

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

1.1  

1.2  

1.3  

1.4  

General description. . . . . . . . . . . . . . . . . . . . . .

 

1  

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

Applications .

 

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

Quick reference data. . . . . . . . . . . . . . . . . . . . .

 

1  

2

Pinning informatio

n

. . . . . . . . . . . . . . . . . . . . . .

 

2  

Ordering informatio

n

. . . . . . . . . . . . . . . . . . . . .

 

2  

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

2  

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Thermal characteristics. . . . . . . . . . . . . . . . . . .

 

3  

Characteristic

s

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .

 

6  

Packing information. . . . . . . . . . . . . . . . . . . . . .

 

6  

Soldering .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

7  

Revision histor

y

. . . . . . . . . . . . . . . . . . . . . . . . .

 

9  

3

4

5

6

7

8

9

10  

11  

12  

Legal information. . . . . . . . . . . . . . . . . . . . . . .

 

10  

Data sheet status . . . . . . . . . . . . . . . . . . . . . .

 

10  

Definition

s

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

0  

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

10  

T

r

ademark

s

. . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

0  

12.1  

12.2  

12.3  

12.4  

13  

14  

Contact informatio

n

. . . . . . . . . . . . . . . . . . . . .

 

10  

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

11  

Please be aware that important notices concerning this document and the product(s)  

described herein, have been included in section ‘Legal information’.  

© Koninklijke Philips Electronics N.

V

.

 

2

006.  

All rights reserved.  

Date of release: 31 March 2006  

Document identifier: PEMD30_PUMD30_1