Nexperia-PH2925U-115
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PH2925U
N-channel TrenchMOS ultra low level FET
Rev. 04 — 24 February 2009
Product data sheet
1. Product
profile
1.1 General
description
Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features
and benefits
Higher operating power due to low
Low conduction losses due to low
thermal resistance
on-state resistance
Interfaces directly with low voltage
gate drivers
1.3 Applications
DC-to-DC convertors
Notebook computers
Portable equipment
Switched-mode power supplies
1.4 Quick
reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage
T
j
≥
25 °C; T
j
≤
150 °C
Min
Typ
Max Unit
V
DS
I
D
–
–
–
–
25
V
A
drain current
T
mb
= 25 °C; V
GS
= 4.5 V;
see
Figure 1
; see
Figure 3
100
P
tot
total power
dissipation
T
mb
= 25 °C; see
Figure 2
–
–
–
62.5
–
W
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 4.5 V; I
D
= 50 A;
V
DS
= 10 V; T
j
= 25 °C;
see
Figure 10
; see
Figure 11
20.2
nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 4.5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 8
;
see
Figure 9
–
2.3
3
m
Ω
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
2. Pinning
information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
mb
D
2
3
G
4
mbb076
S
mb
mounting base; connected to
drain
1
2 3 4
SOT669
(LFPAK)
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Version
PH2925U
LFPAK
SOT669
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
25
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
j
≥
25 °C; T
j
≤
150 °C
T
j
≤
150 °C; T
j
≥
25 °C; R
GS
= 20 k
Ω
–
V
V
V
A
A
V
DGR
V
GS
–
25
-10
10
I
D
V
GS
= 4.5 V; T
mb
= 100 °C; see
Figure 1
–
–
70
V
GS
= 4.5 V; T
mb
= 25 °C; see
Figure 1
;
see
Figure 3
100
I
DM
P
tot
T
stg
T
j
peak drain current
t
p
≤
10 µs; pulsed; T
mb
= 25 °C; see
Figure 3
–
300
62.5
150
150
A
total power dissipation
T
mb
= 25 °C; see
Figure 2
storage temperature
–
W
°C
°C
-55
-55
junction temperature
Source-drain diode
I
S
source current
peak source current
T
mb
= 25 °C
–
–
52
A
A
I
SM
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
150
Avalanche ruggedness
E
DS(AL)S
non-repetitive
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 70.7 A; V
sup
≤
25 V;
–
250
mJ
drain-source avalanche
unclamped; t
p
= 0.22 ms; R
GS
= 50
Ω
energy
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
2 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
003aaa631
03aa15
120
120
I
der
P
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
mb
(
°
C)
T
mb
(
°
C)
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aaa438
10
3
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
10
2
1 ms
10 ms
10
DC
100 ms
1
10
-1
10
-1
1
10
10
2
V
DS
(V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
3 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
5. Thermal
characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
see
Figure 4
junction to mounting
base
–
–
2
K/W
003aaa439
10
Z
th(j-mb)
(K/W)
δ
= 0.5
1
t
p
P
δ
=
0.2
T
0.1
0.05
t
t
p
0.02
single pulse
10
-3
T
10
-1
10
-4
10
-2
10
-1
1
t
p
(s)
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
4 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
22.5
25
–
–
–
–
–
V
V
V
–
V
GS(th)
gate-source threshold
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
1.2
voltage
see
Figure 6
; see
Figure 7
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 150 °C;
see
Figure 6
; see
Figure 7
0.25
0.45
–
–
V
V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 7
; see
Figure 6
0.7
0.95
I
DSS
drain leakage current
gate leakage current
V
DS
= 25 V; V
GS
= 0 V; T
j
= 150 °C
V
DS
= 25 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
–
–
–
–
–
–
500
1
µA
µA
nA
nA
m
Ω
0.06
20
20
3.6
I
GSS
100
100
4.8
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 150 °C;
see
Figure 8
; see
Figure 9
V
GS
= 2.5 V; I
D
= 25 A; T
j
= 25 °C
–
–
3.2
2.3
4.2
3
m
Ω
m
Ω
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 8
; see
Figure 9
R
G
internal gate resistance
f = 1 MHz; T
j
= 25 °C
(AC)
–
1.55
–
Ω
Dynamic characteristics
Q
G(tot)
Q
GS
total gate charge
gate-source charge
gate-drain charge
I
D
= 50 A; V
DS
= 10 V; V
GS
= 4.5 V;
T
j
= 25 °C; see
Figure 10
; see
Figure 11
–
–
–
–
92
–
–
–
–
nC
nC
nC
V
12
Q
GD
20.2
1.6
V
GS(pl)
gate-source plateau
voltage
I
D
= 50 A; V
DS
= 10 V; T
j
= 25 °C;
see
Figure 10
; see
Figure 11
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
DS
= 10 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 12
–
–
–
6150
1170
814
–
–
–
pF
pF
pF
reverse transfer
capacitance
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 10 V; R
L
= 1
Ω
; V
GS
= 4.5 V;
R
G(ext)
= 4.7
Ω
; T
j
= 25 °C
–
–
–
–
30
–
–
–
–
ns
ns
ns
ns
80
turn-off delay time
fall time
258
114
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 13
–
–
0.72
60
1.2
–
V
t
rr
reverse recovery time
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 25 V
ns
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
5 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
003aaa440
03aj64
−
3
−
4
−
5
−
6
10
40
4.5 2
1.5 1.4
I
D
I
D
(A)
(A)
1.3
30
20
10
10
min
typ
max
1.2
10
10
1.1
V
GS
(V) = 1
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
(V)
V
DS
(V)
V
GS
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
Sub-threshold drain current as a function of
gate-source voltage
03aj65
003aaa442
1.2
20
1.3
V
GS
(V) = 1.2
R
DSon
(m
Ω
)
V
GS(th)
(V)
0.9
0.6
0.3
0
15
10
5
max
typ
min
1.5
4.5
0
−
60
0
60
120
180
0
10
20
30
40
I
D
(A)
T (
°
C)
j
Fig 7.
Gate-source threshold voltage as a function of
junction temperature
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
6 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
03af18
003aaa445
5
2
a
V
GS
(V)
4
1.5
3
2
1
0
1
0.5
0
-60
0
60
120
180
0
25
50
75
100
T
j
(
°
C)
Q
G
(nC)
Fig 10.
Gate-source voltage as a function of gate
charge; typical values
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaa443
10
5
V
DS
C
(pF)
I
D
10
4
V
GS(pl)
C
iss
V
GS(th)
V
GS
10
3
Q
GS1
Q
GS2
C
oss
C
rss
Q
GS
Q
GD
Q
G(tot)
003aaa508
10
2
10
-1
Fig 11.
Gate charge waveform definitions
1
10
10
2
V
DS
(V)
Fig 12.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
7 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
003aaa444
40
I
S
(A)
30
20
10
0
150
°
C
T
j
= 25
°
C
0
0.2
0.4
0.6
0.8
1
V
SD
(V)
Fig 13.
Source current as a function of source-drain voltage; typical values
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
8 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
7. Package
outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
A
2
E
A
C
c
E
1
b
2
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2
e
A
(A )
3
C
A
1
θ
L
detail X
y
C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
D
(1)
D
(1)
(1)
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max
1.20 0.15 1.10
1.01 0.00 0.95
0.50 4.41
2.2 0.9
0.25 0.30 4.10
0.35 3.62
2.0 0.7
0.19 0.24 3.80
5.0 3.3
4.8 3.1
6.2 0.85 1.3
1.3
5.8 0.40 0.8
0.8
8
°
0
°
mm
0.25
4.20
1.27
0.25 0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-10-13
06-03-16
SOT669
MO-235
Fig 14.
Package outline SOT669 (LFPAK)
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
9 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
8. Revision
history
Table 7.
Revision history
Document ID
PH2925U_4
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090224
Product data sheet
–
PH2925U_3
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
PH2925U_3
20051129
Product data sheet
–
PH2925U-02
PH2925U-02
20040408
Product data
–
PH2925U-01
(9397 750 13064)
PH2925U-01
20030502
Product data
–
–
(9397 750 11407)
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
10 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
9. Legal
information
9.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Applications
— Applications that are described herein for any of these
9.2 Definitions
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale
— Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General
— Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes
— Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use
— Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
10. Contact information
PH2925U_4
Product data sheet
Rev. 04 — 24 February 2009
11 of 12
©
Nexperia B.V. 2017. All rights reserved
PH2925U
Nexperia
N-channel TrenchMOS ultra low level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics
. . . . . . . . . . . . . . . . . . .4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
1
9.1
9.2
9.3
9.4
10
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . . .
1
1
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
24 February 2009
