Nexperia-PHPT60415NYX
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PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
15 January 2019
Product data sheet
1. General
description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power
plastic package.
PNP complement: PHPT60415PY
2. Features
and benefits
•
High thermal power dissipation capability
•
•
•
•
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.
3. Applications
•
•
•
•
•
•
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
4. Quick
reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
CEO
collector-emitter
voltage
open base
–
–
40
V
I
C
collector current
–
–
–
–
15
30
40
A
I
CM
peak collector current
single pulse; t
p
≤ 1
ms
–
A
R
CEsat
collector-emitter
saturation resistance
I
C
= 15 A; I
B
= 1.5 A; t
p
≤ 300
µs;
pulsed; δ ≤
0.02; T
amb
= 25 °C
28
mΩ
Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
5. Pinning
information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
E
E
E
B
C
emitter
emitter
emitter
base
mb
C
2
B
3
E
4
sym123
1
2 3 4
mb
collector
LFPAK56; Power-
SO8 (SOT669)
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PHPT60415NY
LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
7. Marking
Table 4. Marking codes
Type number
Marking code
PHPT60415NY
0415NAB
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PHPT60415NY
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Nexperia B.
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Product data sheet
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Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Conditions
Min
Max
40
40
7
Unit
V
collector-base voltage
open emitter
–
collector-emitter voltage
open base
–
V
emitter-base voltage
collector current
open collector
–
V
–
15
30
1.5
3
A
I
CM
peak collector current
base current
single pulse; t
p
≤ 1
ms
–
A
I
B
–
A
I
BM
peak base current
total power dissipation
single pulse; t
p
≤ 1
ms
T
amb
≤ 25
°C
–
A
P
tot
–
1.5
3.7
5
W
W
W
W
°C
°C
°C
–
–
–
25
175
175
175
T
j
junction temperature
ambient temperature
storage temperature
–
T
amb
T
stg
-55
-65
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm
2
.
[3] Device
mounted on an ceramic PCB; Al
2
O
3
, standard footprint.
[4] Power
dissipation from junction to mounting base.
aaa-016569
6
(1)
P
tot
(W)
4
2
0
(2)
(3)
-75
25
125
225
T
(°C)
amb
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, standard footprint
Fig. 1.
Power derating curves
©
PHPT60415NY
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Nexperia B.
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Product data sheet
15 January 2019
3 / 13
Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
41
Unit
K/W
K/W
K/W
K/W
R
th(j-a)
thermal resistance from
in free air
junction to ambient
–
–
–
–
–
–
–
–
30
R
th(j-mb)
thermal resistance from
junction to mounting
base
6
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm
2
.
[3] Device
mounted on an ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
aaa-016570
3
10
Z
th(j-a)
(K/W)
2
duty cycle = 1
10
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-016571
2
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.2
0.33
10
0.1
0.05
0.01
1
0.02
0
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm
2
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PHPT60415NY
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Nexperia B.
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Product data sheet
15 January 2019
4 / 13
Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
I
CBO
collector-base cut-off
current
V
CB
= 32 V; I
E
= 0 A; T
amb
= 25 °C
V
CB
= 32 V; I
E
= 0 A; T
j
= 150 °C
–
–
–
–
–
–
µA
I
CES
I
EBO
h
FE
collector-emitter cut-off
V
CE
= 32 V; V
BE
= 0 V; T
amb
= 25 °C
current
100
nA
emitter-base cut-off
current
V
EB
= 7 V; I
C
= 0 A; T
amb
= 25 °C
–
–
100
nA
DC current gain
V
CE
= 2 V; I
C
= 500 mA; T
amb
= 25 °C
250
250
410
400
–
–
V
CE
= 2 V; I
C
= 1 A; t
p
≤ 300
µs; δ ≤
0.02; T
amb
= 25 °C
V
CE
= 2 V; I
C
= 10 A; t
p
≤ 300
µs; δ ≤
0.02; T
amb
= 25 °C
100
160
80
–
V
CE
= 2 V; I
C
= 15 A; t
p
≤ 300
µs; δ ≤
0.02; T
amb
= 25 °C; pulsed
50
–
–
V
CEsat
collector-emitter
saturation voltage
I
C
= 1 A; I
B
= 50 mA; t
p
≤ 300
µs; δ ≤
0.02; T
amb
= 25 °C; pulsed
28
40
400
mV
mV
I
C
= 10 A; I
B
= 1 A; t
p
≤ 300
µs; pulsed;
δ ≤
0.02; T
amb
= 25 °C
–
250
I
C
= 15 A; I
B
= 1.5 A; t
p
≤ 300
µs;
pulsed; δ ≤
0.02; T
amb
= 25 °C
–
–
420
28
600
40
mV
mΩ
R
CEsat
V
BEsat
collector-emitter
saturation resistance
base-emitter saturation
I
C
= 1 A; I
B
= 50 mA; t
p
≤ 300
µs;
–
–
–
–
–
–
–
–
1
V
V
V
V
voltage
pulsed; δ ≤
0.02; T
amb
= 25 °C
I
C
= 10 A; I
B
= 1 A; t
p
≤ 300
µs; pulsed;
δ ≤
0.02; T
amb
= 25 °C
1.35
1.5
0.8
I
C
= 15 A; I
B
= 1.5 A; t
p
≤ 300
µs;
pulsed; δ ≤
0.02; T
amb
= 25 °C
V
BEon
base-emitter turn-on
voltage
V
CE
= 2 V; I
C
= 500 mA; T
amb
= 25 °C
t
d
t
r
delay time
V
CC
= 12.5 V; I
C
= 8 A; I
Bon
= 250 mA;
I
Boff
= -250 mA; T
amb
= 25 °C
–
–
–
–
–
–
–
20
–
–
–
–
–
–
–
ns
rise time
215
235
290
125
415
105
ns
t
on
t
s
turn-on time
storage time
fall time
ns
ns
t
f
ns
t
off
f
T
turn-off time
transition frequency
ns
V
CE
= 10 V; I
C
= 500 mA; f = 100 MHz;
T
amb
= 25 °C
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A; f = 1 MHz;
T
amb
= 25 °C
–
90
–
pF
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PHPT60415NY
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Nexperia B.
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Product data sheet
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5 / 13
Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
aaa-016572
aaa-016573
800
18
I
= 150 mA
B
h
FE
I
C
110 mA
60 mA
(A)
(1)
(2)
600
80 mA
40 mA
12
400
200
0
30 mA
15 mA
(3)
20 mA
10 mA
6
0
5 mA
4
-1
10
2
3
4
5
1
10
10
10
10
10
(mA)
0
1
2
3
5
I
V
(V)
C
CE
V
CE
= 2 V
T
amb
= 25 °C
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 5.
Collector current as a function of collector-
emitter voltage; typical values
Fig. 4.
DC current gain as a function of collector
current; typical values
aaa-016574
aaa-016575
1.2
1.4
V
BE
(V)
V
BEsat
(V)
1.0
1.0
0.6
0.2
(1)
0.8
0.6
0.4
0.2
(1)
(2)
(2)
(3)
(3)
-1
10
2
3
4
5
-1
10
2
3
4
5
1
10
10
10
10
10
(mA)
1
10
10
10
10
10
I (mA)
C
I
C
V
CE
= 2 V
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6.
Base-emitter voltage as a function of collector
Fig. 7.
Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
©
PHPT60415NY
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Nexperia B.
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019. All rights reserved
Product data sheet
15 January 2019
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Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
aaa-016576
aaa-016577
1
1
V
V
CEsat
(V)
CEsat
(V)
-1
-1
-2
-3
10
10
10
10
(1)
(2)
(1)
(3)
(2)
(3)
(4)
-2
10
10
-3
-1
10
2
3
4
5
-1
2
3
4
5
1
10
10
10
10
10
(mA)
10
1
10
10
10
10
10
I (mA)
C
I
C
I
C
/I
B
= 20
T
amb
= 25 °C
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 20
(4) I
C
/I
B
= 10
Fig. 8.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-016578
aaa-016579
2
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
10
10
1
10
(1)
1
(2)
(3)
-1
10
(1)
(2)
-1
10
10
(4)
(3)
-2
-2
10
-1
2
3
4
5
-1
2
3
4
5
10
1
10
10
10
10
10
(mA)
10
1
10
10
10
10
10
I (mA)
C
I
C
I
C
/I
B
= 20
T
amb
= 25 °C
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 20
(4) I
C
/I
B
= 10
Fig. 10.
Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 11.
Collector-emitter saturation resistance as a
function of collector current; typical values
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PHPT60415NY
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Nexperia B.
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019. All rights reserved
Product data sheet
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Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
11. Test
information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 12.
BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mlb826
Fig. 13.
Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard
Q101 – Stress test qualification for discrete semiconductors
, and is suitable for use in
automotive applications.
©
PHPT60415NY
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Nexperia B.
V
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019. All rights reserved
Product data sheet
15 January 2019
8 / 13
Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
12. Package
outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41
2.2 0.9
0.25 0.30 4.10 4.20
5.0 3.3
6.2 0.85 1.3
1.3
5.8 0.40 0.8
0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62
2.0 0.7
0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
Issue date
11-03-25
References
Outline
version
European
projection
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 14.
Package outline LFPAK56; Power-SO8 (SOT669)
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Nexperia B.
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Product data sheet
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Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
13. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
0.6
(3×)
(4×)
0.25
(2×)
0.25
(2×)
3.5
3.45
0.6
2.55
(3×)
2
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu –
0.050
0.7
(4×)
1.27
3.81
solder paste
solder lands
125 µm stencil
occupied area
Dimensions in mm
solder resist
sot669_fr
Fig. 15.
Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
©
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Nexperia B.
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.
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019. All rights reserved
Product data sheet
15 January 2019
10 / 13
Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
14. Revision
history
Table 8. Revision history
Data sheet ID
PHPT60415NY v.2
Modifications:
Release date
20190115
Data sheet status
Change notice
Supersedes
Product data sheet
–
PHPT60415NY v.1
•
Typo at figures 2 and 3: unit corrected from ns to s at x-scale
PHPT60415NY v.1
20150527 Product
data sheet
–
–
©
PHPT60415NY
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Nexperia B.
V
.
2
019. All rights reserved
Product data sheet
15 January 2019
11 / 13
Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
15. Legal
information
Data sheet status
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
Product
Definition
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale
— Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Disclaimers
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
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of Nexperia.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
T
e
rms and conditions of commercial sale of Nexperia.
Right to make changes
— Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications
— This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PHPT60415NY
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
019. All rights reserved
Product data sheet
15 January 2019
12 / 13
Nexperia
PHPT60415NY
40
V
,
1
5 A NPN high power bipolar transistor
Contents
©
Nexperia B.
V
.
2
019. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 15 January 2019
©
PHPT60415NY
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
019. All rights reserved
Product data sheet
15 January 2019
13 / 13
