Nexperia-PMBS3904-215

Part #Nexperia-PMBS3904-215
Download 
Nexperia-PMBS3904-215
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PMBS3904  
NPN general purpose transistor  
Product data sheet  
2004 Feb 02  
Supersedes data of 1999 Apr 22  

NXP Semiconductors  
Product data sheet  
NPN general purpose transistor  
PMBS3904  
FEATURES  
PINNING  
•
Low current (max. 100 mA)  
•
Low voltage (max. 40 V).  
PIN  
1
DESCRIPTION  
base  
2
emitter  
collector  
APPLICATIONS  
3
•
General purpose switching and amplification, e.g.  
telephony and professional communication equipment.  
DESCRIPTION  
handbook, halfpage  
3
NPN transistor in a plastic SOT23 package.  
PNP complement: PMBS3906.  
3
2
1
MARKING  
TYPE NUMBER  
PMBS3904  
MARKING CODE

(1)  

1
2
*O4  
Top view  
MAM255  
Note  
1. *
 
= p : Made in Hong Kong.  
* = t : Made in Malaysia.  
* = W : Made in China.  
Fig.1 Simplified
 
outline (SOT23) and symbol.  
ORDERING INFORMATION  
TYPE  
PACKAGE  
DESCRIPTION  
plastic surface mounted package; 3 leads  
NUMBER  
NAME  
VERSION  
PMBS3904  
−
SOT23  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
60  
UNIT  
V

CBO  

V

CEO  

V

EBO  

I

C  

−
−
−
−
−
−
−
V
collector-emitter voltage  
emitter-base voltage  
open base  
40  
V
open collector  
6
V
collector current capability  
peak collector current  
peak base current  
100  
200  
200  
250  
+150  
150  
+150  
mA  
mA  
mA  
mW  
°
C  
°
C  
°
C  
I

CM  

I

BM  

P

tot  

T

stg  

T

j  

total power dissipation  
storage temperature  
T

amb

≤
25
°
C  
−
65  
−
junction temperature  
T

amb  

operating ambient temperature  
−
65  
2004 Feb 02  
2

NXP Semiconductors  
Product data sheet  
NPN general purpose transistor  
PMBS3904  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
UNIT  
R

th(j-a)  

thermal resistance from junction to ambient  
500  
K/W  
Note  
1. Transistor
 
mounted on an FR4 printed-circuit board.  
CHARACTERISTICS  
T

amb

= 25
°
C unless otherwise specified.  
SYMBOL  
I

CBO  

I

EBO  

h

FE  

PARAMETER  
CONDITIONS  
I

E

= 0; V

CB

= 30 V  
MIN.  
MAX.  
50  
UNIT  
nA  
collector cut-off current  
emitter cut-off current  
DC current gain  
−
−
I

C

= 0; V

EB

= 5 V  
50  
nA  
V

CE

= 1 V; note 1; (see Fig.2)  
I

C

= 0.1 mA  
40  
70  
100  
60  
30  
−
−
I

C

= 1 mA  
−
I

C

= 10 mA  
300  
−
I

C

= 50 mA  
I

C

= 100 mA  
−
V

CEsat  

collector-emitter saturation  
voltage  
I

C

= 10 mA; I

B

= 1 mA  
I

C

= 50 mA; I

B

= 5 mA  
I

C

= 10 mA; I

B

= 1 mA  
I

C

= 50 mA; I

B

= 5 mA  
I

E

= i

e

= 0; V

CB

= 5 V; f = 1 MHz  
I

C

= i

c

= 0; V

EB

= 0.5 V; f = 1 MHz  
200  
300  
850  
950  
4
mV  
mV  
mV  
mV  
pF  
−
V

BEsat  

base-emitter saturation voltage  
650  
−
C

c  

C

e  

f

T  

collector capacitance  
emitter capacitance  
transition frequency  
noise figure  
−
−
12  
−
pF  
I

C

= 10 mA; V

CE

= 20 V; f = 100 MHz
 
180  
MHz  
dB  
F
I

C

= 100
µ
A; V

CE

= 5 V; R

S

= 1 k
Ω
;  
−
5
f = 10 Hz to 15.7 kHz  
Switching times (between 10% and 90% levels);
(see Fig.3)  
t

on  

t

d  

t

r  

turn-on time  
delay time  
rise time  
I

Con

= 10 mA; I

Bon

= 1 mA;  
I

Boff

=
−
1 mA; V

CC

= 3 V;  
−
−
−
−
−
−
110  
50  
ns  
ns  
ns  
ns  
ns  
ns  
V

BB

=
−
1.9 V  
60  
t

off  

t

s  

turn-off time  
storage time  
fall time  
1200  
1000  
200  
t

f  

Note  
1. Pulse
 
test: t

p

≤
300
µ
s;
δ ≤
0.02.  
2004 Feb 02  
3

NXP Semiconductors  
Product data sheet  
NPN general purpose transistor  
PMBS3904  
MBH723  
250  
h
FE  
200  
V
= 5 V  
CE  
150  
100  
50  
0
−
2  
−
1  
2
3
10  
10  
1
10  
10  
10  
I
(mA)  
C
Fig.2 DC
 
current gain; typical values.  
V
B
V
C
BB  
CC  
R
R
V
(probe)  
(probe)  
o
oscilloscope  
oscilloscope  
450
Ω
 
450
Ω  
R2  
V
i
DUT  
R1  
MLB826  
V

i

= 5 V; T = 500
µ
s; t

p

= 10
µ
s; t

r

= t

f

≤
3 ns.  
R1 = 56
Ω
; R2 = 2.5 k
Ω
; R

B

= 3.9 k
Ω
; R

C

= 270
Ω
.  
Oscilloscope: input impedance Z

i

= 50
Ω
.  
Fig.3 Test
 
circuit for switching times.  
4
2004 Feb 02  

NXP Semiconductors  
Product data sheet  
NPN general purpose transistor  
PMBS3904  
PACKAGE OUTLINE  
Plastic surface-mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w
M  
B
1
L
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
04-11-04  
06-03-16  
SOT23  
TO-236AB  
2004 Feb 02  
5

NXP Semiconductors  
Product data sheet  
NPN general purpose transistor  
PMBS3904  
DATA SHEET STATUS  
DOCUMENT  
STATUS

(1)  

PRODUCT  
STATUS

(2)  

DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please
 
consult the most recently issued document before initiating or completing a design.  
2. The
 
product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General
⎯
Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale
⎯

Right to make changes
⎯
NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license
⎯
Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use
 
⎯
NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control
⎯
This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data
⎯
The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications
⎯
Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values
⎯
Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2004 Feb 02  
6

NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit:

For sales offices addresses send e-mail to:

© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/05/pp7  
Date of release: 2004 Feb 02  
Document order number:
 
9397 750 12449