Nexperia-PMBTA42DS-125
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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
PMBTA42DS
NPN/NPN high-voltage double transistors
Rev. 02 — 27 August 2009
Product data sheet
1. Product
profile
1.1 General
description
NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted
Device (SMD) plastic package.
1.2 Features
I
High breakdown voltage
I
T
w
o electrically isolated transistors
I
Small SMD plastic package
1.3 Applications
I
Automotive:
N
High- and low-side switches
N
Voltage regulators
I
Communication:
T
e
lecom line interface
I
Consumer: CRT TV
I
Computing: Monitors
1.4 Quick
reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
V
CEO
I
C
collector-emitter voltage
open base
collector current
–
–
–
–
–
–
300
100
200
V
mA
mA
I
CM
peak collector current
single pulse;
t
p
≤
1 ms
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
emitter TR1
base TR2
Simplified outline
Symbol
6
5
4
6
5
4
2
3
collector TR2
emitter TR2
base TR1
TR1
1
4
1
2
3
TR2
5
6
collector TR1
2
3
006aaa677
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMB
T
A
42DS
SC-74
plastic surface mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMB
T
A
42DS
P4
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
open emitter
open base
–
–
–
–
–
300
300
6
V
collector-emitter voltage
emitter-base voltage
collector current
V
open collector
V
100
200
mA
mA
I
CM
peak collector current
single pulse;
t
p
≤
1 ms
I
BM
P
tot
peak base current
single pulse;
t
p
≤
1 ms
–
100
mA
[1]
[2]
[3]
total power dissipation
T
amb
≤
25
°
C
–
–
–
290
370
450
mW
mW
mW
PMB
T
A
42DS_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 27 August 2009
2 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
Parameter
Conditions
Min
Max
Unit
[1]
[2]
[3]
total power dissipation
T
amb
≤
25
°
C
–
420
mW
mW
mW
°
C
–
560
–
700
T
j
junction temperature
ambient temperature
storage temperature
–
150
T
amb
T
stg
−
65
−
65
+150
+150
°
C
°
C
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
[3] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
6. Thermal
characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
[1]
[2]
[3]
R
th(j-a)
thermal resistance from
junction to ambient
in free air
–
–
–
–
–
–
–
–
431
338
278
105
K/W
K/W
K/W
K/W
R
th(j-sp)
thermal resistance from
junction to solder point
Per device
[1]
[2]
[3]
R
th(j-a)
thermal resistance from
junction to ambient
in free air
–
–
–
–
–
–
298
223
179
K/W
K/W
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
[3] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PMB
T
A
42DS_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 27 August 2009
3 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
I
CBO
I
EBO
h
FE
collector-base
cut-off current
V
CB
= 200 V; I
E
= 0 A
V
EB
= 6 V; I
C
= 0 A
–
–
–
–
100
100
nA
nA
emitter-base
cut-off current
DC current gain
V
CE
= 10 V; I
C
= 1 mA
V
CE
= 10 V; I
C
= 10 mA
V
CE
= 10 V; I
C
= 30 mA
I
C
= 20 mA; I
B
= 2 mA
25
40
40
–
–
–
–
–
–
–
–
V
CEsat
V
BEsat
C
re
collector-emitter
saturation voltage
500
mV
mV
pF
base-emitter
saturation voltage
I
C
= 20 mA; I
B
= 2 mA
–
–
–
–
900
feedback
capacitance
V
CB
= 20 V; I
C
= i
c
= 0 A;
f = 1 MHz
–
3
–
f
T
transition
frequency
V
CE
= 20 V; I
C
= 10 mA;
f = 100 MHz
50
MHz
006aaa688
mld391
200
300
I
(mA) = 30
B
I
27
24
21
18
C
(mA)
h
FE
150
(1)
15
200
100
0
12
9
6
100
50
0
(2)
(3)
3
−
1
2
0
2
4
6
8
10
(V)
10
1
10
10
V
I (mA)
C
CE
T
amb
= 25
°
C
V
CE
= 10 V
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 1.
Collector current as a function of
collector-emitter voltage; typical values
Fig 2.
DC current gain as a function of collector
current; typical values
PMB
T
A
42DS_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 27 August 2009
4 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
mld393
mld394
1000
1000
BEsat
V
BE
V
(mV)
800
(1)
(2)
(mV)
(1)
(2)
800
600
400
200
0
600
400
200
(3)
(3)
−
1
2
−
1
2
10
1
10
10
10
1
10
10
I
(mA)
I (mA)
C
C
V
CE
= 10 V
I
C
/I
B
= 10
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
Fig 3.
Base-emitter voltage as a function of collector
current; typical values
Fig 4.
Base-emitter saturation voltage as a function
of collector current, typical values
mld395
3
10
V
CEsat
(mV)
(1)
(2)
2
10
(3)
10
10
−
1
2
1
10
10
I
(mA)
C
I
C
/I
B
= 10
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 5.
Collector-emitter saturation voltage as a function of collector current; typical values
PMB
T
A
42DS_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 27 August 2009
5 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
8. Package
outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 6.
Package outline SOT457 (SC-74)
9. Packing
information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package Description
Packing quantity
3000
-115
-125
10000
[2]
PMB
T
A
42DS
SOT457 4
mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-135
-165
[3]
[1] For
further information and the availability of packing methods, see
Section 13
.
[2] T1:
normal taping
[3] T2:
reverse taping
PMB
T
A
42DS_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 27 August 2009
6 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
10. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
2.825
3.30
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 7.
Reflow soldering footprint SOT457 (SC-74)
5.30
solder lands
solder resist
occupied area
5.05
0.45 1.45 4.45
msc423
1.40
4.30
Dimensions in mm
Fig 8.
Wave soldering footprint SOT457 (SC-74)
PMB
T
A
42DS_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 27 August 2009
7 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
11. Revision history
Table 9.
Revision history
Document ID
PMB
T
A
42DS_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090827
Product data sheet
–
PMB
T
A
42DS_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 8 “Wave soldering footprint SOT457 (SC-74)”
:updated
PMB
T
A
42DS_1
20060106
Product data sheet
–
–
PMB
T
A
42DS_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 27 August 2009
8 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft —
The document is a draft version onl
y
.
T
he content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes onl
y
.
N
XP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliabilit
y
.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
intellectual property rights infringement and limitation of liabilit
y
,
u
nless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, militar
y
,
a
ircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injur
y
,
d
eath or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
PMB
T
A
42DS_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 27 August 2009
9 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data. . . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics. . . . . . . . . . . . . . . . . . .
3
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
6
Packing information. . . . . . . . . . . . . . . . . . . . . .
6
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
8
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
9
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
T
r
ademark
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
12.1
12.2
12.3
12.4
13
14
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . . .
9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.
V
.
2
009.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 August 2009
Document identifier: PMBTA42DS_2
