Nexperia-PMCM4401UPEZ
| Part # | Nexperia-PMCM4401UPEZ |
Download  | Nexperia-PMCM4401UPEZ |
PMCM4401UPE
20 V, P-channel Trench MOSFET
7 October 2016
Product data sheet
1. General
description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size
Package (WLCSP) using Trench MOSFET technology.
2. Features
and benefits
•
Low threshold voltage
•
•
•
Ultra small package: 0.78 × 0.78 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•
•
•
•
Battery switch
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick
reference data
Table 1. Quick reference data
Symbol
V
DS
Parameter
Conditions
Min
Typ
Max
-20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
–
–
–
V
GS
-8
–
V
I
D
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; I
D
= -3 A; T
j
= 25 °C
-4
A
Static characteristics
R
DSon
drain-source on-state
resistance
–
75
95
mΩ
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
5. Pinning
information
Table 2. Pinning information
Pin
A1
A2
B1
B2
Symbol Description
Simplified outline
Graphic symbol
1
2
D
G
S
D
S
gate
source
drain
A
B
G
source
S
Transparent top view
017aaa259
WLCSP4 (OL-
PMCM4401UPE)
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMCM4401UPE
WLCSP4
WLCSP4: wafer level chip-size package; 4 bumps (2 x 2)
OL-
PMCM4401UPE
7. Marking
Table 4. Marking codes
Type number
Marking code
PMCM4401UPE
S
2
PIN A1
INDICATION
MARKING CODE
1
(EXAMPLE)
A
B
T
o
p view, balls down
aaa-012880
Fig. 1.
WLCSP4 marking code description
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
2 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
-20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
V
GS
-8
V
I
D
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤ 10
µs
T
amb
= 25 °C
–
-4
A
–
-3.2
-2
A
–
A
I
DM
P
tot
peak drain current
–
-13
400
1300
A
total power dissipation
–
mW
mW
–
T
sp
= 25 °C
–
12500 mW
T
j
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
T
amb
T
stg
Source-drain diode
I
S
source current
T
amb
= 25 °C
–
-1.2
A
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
[2] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
– 75
0
– 75
– 25
25
75
125
175
– 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 2.
MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
Fig. 3.
MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
3 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
aaa-023927
2
-10
I
D
(A)
Limit R
= V
/I
DS D
t
= 10 µs
= 100 µs
= 1 ms
DSon
p
-10
t
p
-1
-1
t
p
DC; T
= 25 °C
sp
t
= 10 ms
p
-10
DC; T
= 25 °C;
amb
t
= 100 ms
p
2
drain mounting pad 6 cm
-2
-10
-1
2
-10
-1
-10
-10
V
(V)
DS
I
DM
= single pulse
Fig. 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
4 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
250
70
85
50
5
Max
300
85
Unit
K/W
K/W
K/W
K/W
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
–
–
–
–
–
100
60
in free air; t ≤ 5 s
R
th(j-sp)
thermal resistance
from junction to solder
point
10
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain, 4-layer, 1 cm
2
.
[3] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
aaa-013734
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
2
10
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
5 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
aaa-013735
2
10
duty cycle = 1
0.75
0.50
Z
th(j-a)
(K/W)
0.33
0.20
0.25
0.10
10
0.05
0.02
0.01
0
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 6.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
6 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C
-20
–
–
V
V
V
GSth
gate-source threshold
I
D
= -250 µA; V
DS
=V
GS
; T
j
= 25 °C
voltage
-0.4
-0.6
-0.9
I
DSS
I
GSS
drain leakage current
gate leakage current
V
DS
= -20 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -3 A; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -3 A; T
j
= 150 °C
V
GS
= -2.5 V; I
D
= -2 A; T
j
= 25 °C
V
GS
= -1.8 V; I
D
= -0.1 A; T
j
= 25 °C
V
DS
= -6 V; I
D
= -3 A; T
j
= 25 °C
–
–
–
–
–
–
–
–
–
–
–
–
–
-1
µA
µA
µA
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
–
-10
10
–
–
-1
–
1
–
-200
200
95
–
R
DSon
drain-source on-state
resistance
75
100
95
130
10.8
120
130
190
–
g
fs
forward
transconductance
R
G
gate resistance
f = 1 MHz
–
7
–
Ω
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
V
DS
= -10 V; I
D
= -3 A; V
GS
= -4.5 V;
T
j
= 25 °C
–
–
–
–
–
–
5.9
0.6
1.7
420
64
10
–
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
–
V
DS
= -10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
–
C
oss
C
rss
–
reverse transfer
capacitance
58
–
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= -10 V; I
D
= -3.3 A; V
GS
= -4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
–
–
–
–
4
–
–
–
–
ns
ns
ns
ns
18
31
13
turn-off delay time
fall time
Source-drain diode
V
SD
source-drain voltage
I
S
= -1.2 A; V
GS
= 0 V; T
j
= 25 °C
–
-0.8
-1.2
V
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
7 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
aaa-023928
aaa-023942
-3
-4
-5
-6
-12
-10
-2.0 V
-4.5 V
-2.5 V
I
I
D
D
(A)
(A)
min
typ
max
-1.8 V
-8
-10
-1.6 V
-1.4 V
-4
-10
-10
V
= -1.2 V
GS
0
0
-1
-2
-3
-4
0
-0.2
-0.4
-0.6
-0.8
V
-1.0
(V)
GS
V
(V)
DS
T
j
= 25 °C
T
j
= 25 °C; V
DS
= -5 V
Fig. 7.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 8.
Sub-threshold drain current as a function of
gate-source voltage
aaa-023930
aaa-023929
400
280
R
(mΩ)
240
-1.4 V
-1.6 V
-1.8 V
-2.0 V
DSon
R
(mΩ)
DSon
300
200
160
120
80
200
-2.5 V
T
j =
150 °C
100
0
V
= -4.5 V
GS
T
j =
25 °C
40
0
0
-1
-2
-3
-4
-5
0
-4
-8
-12
V
(V)
I
(A)
GS
D
I
D
= -3.2 A
T
j
= 25 °C
Fig. 10.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 9.
Drain-source on-state resistance as a function
of drain current; typical values
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
8 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
aaa-023931
aaa-023932
-12
1.5
1.0
0.5
0
I
a
D
(A)
-8
-4
0
T
j =
150 °C
T
j =
25 °C
0
-0.5
-1.0
-1.5
-2.0
-2.5
(V)
-60
0
60
120
180
V
T (°C)
j
GS
V
DS
> I
D
× R
DSon
Fig. 11.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 12.
Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-023941
aaa-023933
3
-1.2
10
V
GS(th)
(V)
C
iss
C
(pF)
-0.8
-0.4
0
max
2
10
C
C
typ
oss
rss
min
10
-1
-10
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
I
D
= -0.25 mA; V
DS
= V
GS
f = 1 MHz; V
GS
= 0 V
Fig. 13.
Gate-source threshold voltage as a function of
Fig. 14.
Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
9 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
aaa-023934
-5
V
DS
V
GS
(V)
I
D
-4
-3
-2
-1
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GD
G(tot)
GS
Q
003aaa508
Fig. 16.
MOSFET transistor: Gate charge waveform
definitions
0
2
4
6
8
Q
G
(nC)
I
D
= -3 A; V
DS
= -10 V; T
amb
= 25 °C
Fig. 15.
Gate-source voltage as a function of gate
charge; typical values
aaa-023935
-1.2
I
S
(A)
-0.8
T
j =
150 °C
-0.4
T
j =
25 °C
0
0
-0.4
-0.8
-1.2
V
(V)
SD
V
GS
= 0 V
Fig. 17.
Source current as a function of source-drain voltage; typical values
11. Test
information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 18.
Duty cycle definition
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
10 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
12. Package
outline
WLCSP4: wafer level chip-size package; 4 bumps (2 x 2)
PMCM4401UPE
A
B
E
D
A
2
ball A1
index area
A
A
1
detail X
C
y
y
C
1
B
A
e
2
ball A1
index area
1
2
v
w
C A
C
B
b
X
e
1
0
1 mm
scale
w
Dimensions (mm are the original dimensions)
Unit
A
A
A
b
D
E
e
e
2
v
y
1
2
1
max 0.375
0.215 0.160 0.275
0.81 0.81
mm nom
0.345 0.200 0.145 0.260
0.78 0.78 0.40 0.40 0.15 0.05 0.05
0.315 0.185 0.130 0.245
0.75 0.75
min
Note
Device back is metal coated on Drain potential.
pmcm4401upe-ssmos_po
References
Outline
version
IEC
European
Issue date
projection
JEDEC
JEITA
16-06-28
PMCM4401UPE
Fig. 19.
Package outline WLCSP4 (OL-PMCM4401UPE)
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
11 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering
PMCM4401UPE
0.15
0.25
0.3
0.4
0.1
1
solder resist
0.4
1
solder paste = solderland
occupied area
Dimensions in mm
pmcm4401upe-ssmos_fr
Fig. 20.
Reflow soldering footprint for WLCSP4 (OL-PMCM4401UPE)
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
12 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
14. Revision
history
Table 8. Revision history
Data sheet ID
PMCM4401UPE v.2
Modification:
Release date
20161007
Data sheet status
Change notice
Supersedes
Product data sheet
–
PMCM4401UPE v.1
•
R
dson
at V
GS
= -4.5 V; I
D
= -3 A; T
j
= 25 °C corrected to 95 mΩ.
PMCM4401UPE v.1
20160704 Product
data sheet
–
–
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
13 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
15. Legal
information
Right to make changes
— Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status
Document
Product
Definition
Suitability for use
— Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
[1] Please
consult the most recently issued document before initiating or
completing a design.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Definitions
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
short data sheet, the full data sheet shall prevail.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Terms and conditions of commercial sale
— Nexperia
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Disclaimers
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation –
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
automotive qualified products in automotive equipment or applications.
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
14 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
15 / 16
Nexperia
PMCM4401UPE
20 V, P-channel Trench MOSFET
16. Contents
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
07 October 2016
©
PMCM4401UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 October 2016
16 / 16
