Nexperia-PMD2001D-115
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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
PMD2001D
MOSFET driver
Rev. 02 — 28 August 2009
Product data sheet
1. Product
profile
1.1 General
description
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
Switching transistors in push-pull configuration
I
Application-optimized pinout
I
Space-saving solution
I
Internal connections to minimize layout effort
I
Reduces component count
1.3 Applications
I
MOSFET driver
I
Power bipolar transistor driver
I
Output current booster for operational amplifier
1.4 Quick
reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
V
CEO
I
C
collector-emitter voltage
collector current
open base
–
–
–
–
–
–
40
0.6
1
V
A
A
I
CM
peak collector current
single pulse;
t
p
≤
1 ms
PMD2001D
NXP Semiconductors
MOSFET driver
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Symbol
base TR1, TR2
collector TR2
collector TR2
emitter TR1, TR2
collector TR1
collector TR1
6
1
5
2
4
6
5
4
2
3
TR1
TR2
4
1
2
3
5
6
3
006aaa659
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMD2001D
SC-74
plastic surface-mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMD2001D
9E
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
2 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
I
C
collector-base voltage
collector-emitter voltage
collector current
open emitter
open base
–
–
–
–
40
40
0.6
1
V
V
A
A
I
CM
peak collector current
single pulse;
t
p
≤
1 ms
I
BM
peak base current
–
–
0.1
0.2
A
A
single pulse;
t
p
≤
1 ms
Per device
[1]
[2]
[3]
P
tot
total power dissipation
T
amb
≤
25
°
C
–
320
mW
mW
mW
°
C
–
400
–
540
T
j
junction temperature
ambient temperature
storage temperature
–
150
T
amb
T
stg
−
65
−
65
+150
+150
°
C
°
C
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
[3] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
006aaa768
600
(1)
P
tot
(mW)
(2)
(3)
400
200
0
−
75
−
25
25
75
125
175
(
°
C)
T
amb
(1) Ceramic
PCB, Al
2
O
3
, standard footprint
(2) FR4
PCB, mounting pad for collector 1cm
2
(3) FR4
PCB, standard footprint
Fig 1.
Power derating curves
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
3 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
6. Thermal
characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
390
315
230
Unit
K/W
K/W
K/W
[1]
[2]
[3]
R
th(j-a)
thermal resistance from
junction to ambient
in free air
–
–
–
–
–
–
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
[3] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
006aaa769
3
10
duty cycle =
1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
2
10
0.2
0.1
0.05
0.02
0.01
10
0
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
4 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa770
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
0.5
2
10
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1cm
2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa771
3
10
duty cycle =
Z
th(j-a)
(K/W)
1
0.75
0.5
2
10
0.33
0.2
0.1
0.05
0.02
10
0.01
0
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
5 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter
Per NPN transistor
Conditions
Min
Typ
Max
Unit
I
CBO
collector-bas
e
c
ut-off V
CB
= 40 V; I
E
= 0 A
–
–
–
–
10
10
nA
current
V
CB
= 40 V; I
E
= 0 A;
µ
A
T
j
= 150
°
C
h
FE
DC current gain
V
CE
= 5 V; I
C
= 1 mA
100
210
170
100
150
300
0.86
0.95
–
V
CE
= 5 V; I
C
= 200 mA
V
CE
= 5 V; I
C
= 500 mA
I
C
= 200 mA; I
B
= 20 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 200 mA; I
B
= 20 mA
I
C
= 500 mA; I
B
= 50 mA
100
300
–
[1]
[1]
[1]
50
–
V
CEsat
collector-emitter
saturation voltage
250
500
1
mV
mV
V
–
V
BEsat
base-emitter
saturation voltage
–
–
1.1
V
Per PNP transistor
I
CBO
collector-bas
e
c
ut-off V
CB
=
−
40 V; I
E
= 0 A
–
–
–
–
−
10
−
10
nA
current
V
CB
=
−
40 V; I
E
= 0 A;
µ
A
T
j
= 150
°
C
h
FE
DC current gain
V
CE
=
−
5 V; I
C
=
−
1 mA
100
180
125
80
–
V
CE
=
−
5 V; I
C
=
−
200 mA
V
CE
=
−
5 V; I
C
=
−
500 mA
I
C
=
−
200 mA; I
B
=
−
20 mA
I
C
=
−
500 mA; I
B
=
−
50 mA
I
C
=
−
200 mA; I
B
=
−
20 mA
I
C
=
−
500 mA; I
B
=
−
50 mA
80
50
–
300
–
[1]
[1]
[1]
V
CEsat
collector-emitter
saturation voltage
−
130
−
250 mV
−
280
−
500 mV
–
V
BEsat
base-emitter
saturation voltage
–
−
0.87
−
1
V
V
–
−
0.98
−
1.1
Per device
t
d
t
r
delay time
I
C
= 0.15 A; V
I
= 7.5 V
–
–
–
–
–
–
3
3
6
2
3
5
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
rise time
t
on
t
s
turn-on time
storage time
fall time
t
f
t
off
turn-off time
[1] Pulse
test: t
p
≤
300
µ
s;
δ ≤
0.02
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
6 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa772
006aaa777
800
1.2
IB (mA) = 30
27
24
21
h
FE
I
C
(A)
(1)
(2)
600
18
15
12
0.8
9
400
200
0
6
(3)
(4)
3
0.4
(5)
0
−
1
2
3
10
1
10
10
10
(mA)
0
2
4
6
8
10
(V)
I
V
CE
C
V
CE
= 5 V
T
amb
= 25
°
C
(1) T
amb
= 150
°
C
(2) T
amb
= 125
°
C
(3) T
amb
= 100
°
C
(4) T
amb
= 25
°
C
(5) T
amb
=
−
55
°
C
Fig 5.
TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 6.
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
006aaa773
006aaa776
1.2
1.2
V
(V)
V
BE
BEsat
(V)
1.0
1.0
0.8
0.6
0.4
0.2
(1)
(2)
(3)
(1)
(2)
(3)
0.8
0.6
0.4
0.2
−
1
2
3
−
1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
V
CE
= 5 V
I
C
/I
B
= 20
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
Fig 7.
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig 8.
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
7 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa774
006aaa775
1
1
V
V
CEsat
(V)
CEsat
(V)
(1)
(2)
(3)
(1)
(2)
−
1
−
1
10
10
(3)
−
2
−
2
10
10
−
1
2
3
−
1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
I
C
/I
B
= 20
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 9.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 10.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
8 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa778
006aaa783
300
−
1.2
IB (mA) =
−
25
−
22.5
−
20
h
I
(1)
(2)
FE
C
−
17.5
(A)
−
15
−
12.5
200
100
−
0.8
−
10
−
7.5
−
5
−
0.4
(3)
−
2.5
0
−
10
0
−
1
2
3
−
1
−
10
−
10
−
10
0
−
2
−
4
−
6
−
8
V
−
10
(V)
I
(mA)
C
CE
V
CE
=
−
5 V
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 11.
TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 12.
TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
006aaa779
006aaa782
−
1.2
−
1.2
V
(V)
V
BE
BEsat
(V)
−
1.0
−
1.0
−
0.8
−
0.6
−
0.4
−
0.2
(1)
(2)
(3)
(1)
(2)
(3)
−
0.8
−
0.6
−
0.4
−
0.2
−
1
2
3
−
1
2
3
−
10
−
1
−
10
−
10
−
10
−
10
−
1
−
10
−
10
−
10
I
(mA)
I (mA)
C
C
V
CE
=
−
5 V
I
C
/I
B
= 20
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
Fig 13.
TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 14.
TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
9 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa780
006aaa781
−
1
−
1
V
V
CEsat
(V)
CEsat
(V)
(1)
(2)
(3)
(1)
(2)
−
1
−
1
−
10
−
10
(3)
−
2
−
2
−
10
−
10
−
1
2
3
−
1
2
3
−
10
−
1
−
10
−
10
−
10
(mA)
−
10
−
1
−
10
−
10
−
10
I
I (mA)
C
C
I
C
/I
B
= 20
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 15.
TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 16.
TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
8. Test
information
V
CC
(probe)
oscilloscope
DUT
450
Ω
TR1
TR2
V
R
(probe)
O
V
oscilloscope
I
450
Ω
R1
E
006aaa858
I
C
= 0.15 A; V
I
= 7.5 V; R1 = 56
Ω
; R
E
= 47
Ω
Fig 17.
Test circuit for switching times
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
10 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
9. Package
outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 18.
Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
Packing quantity
3000
-115
-125
10000
-135
[2]
[3]
PMD2001D
SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-165
[1] For
further information and the availability of packing methods, see
Section 14
.
[2] T1:
normal taping
[3] T2:
reverse taping
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
11 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
11. Soldering
3.45
1.95
solder lands
solder resist
occupied area
solder paste
0.95
0.45 0.55
2.825
3.30
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 19.
Reflow soldering footprint SOT457 (SC-74)
5.30
solder lands
solder resist
occupied area
5.05
0.45 1.45 4.45
msc423
1.40
4.30
Dimensions in mm
Fig 20.
Wave soldering footprint SOT457 (SC-74)
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
12 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
12. Revision history
Table 9.
Revision history
Document ID
PMD2001D_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090828
Product data sheet
–
PMD2001D_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 20 “Wave soldering footprint SOT457 (SC-74)”
: updated
PMD2001D_1
20060925
Product data sheet
–
–
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
13 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
13. Legal information
13.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft —
The document is a draft version onl
y
.
T
he content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes onl
y
.
N
XP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliabilit
y
.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, militar
y
,
a
ircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injur
y
,
d
eath or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
PMD2001D_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
14 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data. . . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics. . . . . . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . .
1
0
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
11
Packing information. . . . . . . . . . . . . . . . . . . . .
11
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
3
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . .
14
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
14
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
4
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
T
r
ademark
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
4
13.1
13.2
13.3
13.4
14
15
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . .
14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.
V
.
2
009.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 August 2009
Document identifier: PMD2001D_2
