Nexperia-PMDPB80XP-115
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PMDPB80XP
20
V
,
d
ual P-channel Trench MOSFET
Rev. 1 — 30 May 2012
Product data sheet
1. Product
profile
1.1 General
description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features
and benefits
1.8 V R
DSon
rated for low voltage
Small and leadless ultra thin SMD
gate drive
plastic package: 2 x 2 x 0.65 mm
Trench MOSFET technology
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC/DC converters
Power management in battery-driven
portables
Hard disc and computing power
Small brushless DC motor drive
management
1.4 Quick
reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
V
DS
V
GS
I
D
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
–
–
–
-20
12
V
V
A
-12
–
[1]
V
GS
= -4.5 V; T
amb
= 25 °C; t
≤
5 s
V
GS
= -4.5 V; I
D
= -2.7 A; T
j
= 25 °C
-3.7
Static characteristics (per transistor)
R
DSon
drain-source on-state
resistance
–
80
102
m
Ω
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
2. Pinning
information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
D1
D2
6
5
4
2
3
7
8
4
5
1
2
3
6
S2 G2
G1 S1
017aaa258
Transparent top view
7
SOT1118 (DFN2020-6)
8
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMDPB80XP
DFN2020-6
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
SOT1118
4. Marking
Table 4.
Marking codes
Type number
PMDPB80XP
Marking code
1U
PMDPB80XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
2 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
V
DS
V
GS
I
D
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
-20
V
-12
12
V
[1]
[1]
[1]
V
GS
= -4.5 V; T
amb
= 25 °C; t
≤
5 s
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
–
–
–
–
–
–
–
-3.7
-2.7
-1.7
-11
A
A
A
I
DM
P
tot
peak drain current
A
[2]
[1]
total power dissipation
485
1100
mW
mW
T
sp
= 25 °C
6250 mW
Source-drain diode
[1]
I
S
source current
T
amb
= 25 °C
–
-1.1
A
Per device
T
j
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
T
amb
T
stg
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
[2] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−
75
0
−
75
−
25
25
75
125
175
−
25
25
75
125
175
T (
°
C)
j
T (
°
C)
j
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
PMDPB80XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
3 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
017aaa563
2
-10
I
D
(A)
Limit R
= V
/I
DS D
DSon
-10
t
p
= 10 μs
t
= 100 μs
= 10 ms
p
-1
-1
t
t
p
DC; T
= 25 °C
sp
= 100 ms
p
-10
DC; T
= 25 °C;
2
amb
drain mounting pad 6 cm
-2
-10
-10
-1
2
-1
-10
-10
V
(V)
DS
I
DM
= single pulse
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal
characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
[1]
[2]
[2]
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
–
–
–
–
225
99
260
115
62
K/W
K/W
K/W
K/W
in free air; t
≤
5 s
54
R
th(j-sp)
thermal resistance
from junction to solder
point
in free air
16
20
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
PMDPB80XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
4 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
017aaa564
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
1
0
-1
10
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa565
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
-1
10
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB80XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
5 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C
-20
–
–
V
V
V
GSth
gate-source threshold
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C
voltage
-0.4
-0.6
-1
I
DSS
drain leakage current
V
DS
= -20 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= -20 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 12 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -12 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -2.7 A; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -2.7 A; T
j
= 150 °C
V
GS
= -2.5 V; I
D
= -2.5 A; T
j
= 25 °C
V
GS
= -1.8 V; I
D
= -1.1 A; T
j
= 25 °C
V
DS
= -10 V; I
D
= -2.7 A; T
j
= 25 °C
–
–
–
–
–
–
–
–
–
–
-1
µA
µA
nA
nA
m
Ω
m
Ω
m
Ω
m
Ω
S
–
-10
100
100
102
148
125
156
–
I
GSS
gate leakage current
–
–
R
DSon
drain-source on-state
resistance
80
116
95
120
15
g
fs
forward
transconductance
Dynamic characteristics (per transistor)
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
V
DS
= -10 V; I
D
= -2.7 A; V
GS
= -4.5 V;
T
j
= 25 °C
–
–
–
–
–
–
5.7
0.7
0.96
550
63
8.6
nC
nC
nC
pF
pF
pF
–
–
–
–
–
V
DS
= -10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
C
oss
C
rss
reverse transfer
capacitance
53
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= -10 V; I
D
= -2.7 A; V
GS
= -4.5 V;
R
G(ext)
= 6
Ω
; T
j
= 25 °C
–
–
–
–
6
–
–
–
–
ns
ns
ns
ns
14
120
50
turn-off delay time
fall time
Source-drain diode (per transistor)
V
SD
source-drain voltage
I
S
= -1.1 A; V
GS
= 0 V; T
j
= 25 °C
–
-0.8
-1.2
V
PMDPB80XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
6 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
017aaa531
017aaa532
-3
-4
-5
-10
-10
-10 V
I
D
(A)
V
= -1.8 V
GS
-4.5 V
-2.5 V
-2 V
-8
-6
-4
-2
0
I
D
(A)
-1.6 V
min
typ
max
-1.5 V
-1.4 V
-10
-1.2 V
-1 V
-10
0
-1
-2
-3
-4
0
-0.25
-0.50
-0.75
-1.00
(V)
V
DS
(V)
V
GS
T
j
= 25 °C
T
j
= 25 °C; V
DS
= -5 V
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
017aaa533
017aaa534
0.25
0.4
V
= -1.4 V
-1.3 V
GS
R
DSon
(Ω)
R
DSon
(Ω)
0.20
0.15
0.10
0.05
0
-1.6 V
-1.8 V
0.3
0.2
0.1
0
-2.5 V
-4.5 V
T =
25 °C
j
T =
150 °C
j
0
-1
-2
-3
-4
0
-1
-2
-3
-4
I
D
(A)
V
(V)
GS
T
j
= 25 °C
I
D
= -3 A
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMDPB80XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
7 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
017aaa535
017aaa536
-10
2.0
1.5
1.0
0.5
0
I
D
(A)
a
-8
-6
-4
-2
0
T =
150 °C
T =
25 °C
j
j
0
-0.5
-1.0
-1.5
-2.0
-2.5
(V)
-60
0
60
120
180
V
T (°C)
j
GS
V
DS
> I
D
× R
DSon
Fig 10.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11.
Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa537
017aaa538
3
-2.0
10
V
GS(th)
(V)
C
iss
C
-1.5
-1.0
-0.5
0
max
(pF)
2
10
typ
C
C
oss
min
rss
10
-1
2
-60
0
60
120
180
-10
-1
-10
-10
T (°C)
j
V
(V)
DS
I
D
= -0.25 mA; V
DS
= V
GS
f = 1 MHz; V
GS
= 0 V
Fig 12.
Gate-source threshold voltage as a function of
junction temperature
Fig 13.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMDPB80XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
8 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
017aaa539
-12
V
DS
V
GS
(V)
I
D
-8
-4
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
3
6
9
12
Q
G
(nC)
I
D
= -3 A; V
DS
= -10 V; T
amb
= 25 °C
Fig 14.
Gate-source voltage as a function of gate
charge; typical values
Fig 15.
Gate charge waveform definitions
017aaa540
-4
I
S
(A)
-3
-2
-1
0
T =
150 °C
j
T =
25 °C
j
0
-0.4
-0.8
-1.2
-1.4
V
(V)
DS
V
GS
= 0 V
Fig 16.
Source current as a function of source-drain voltage; typical values
PMDPB80XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
9 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
8. Test
information
t
t
1
2
P
duty cycle
δ
=
t
2
t
1
t
006aaa812
Fig 17.
Duty cycle definition
9. Package
outline
2.1
1.9
0.65
max
1.1
0.9
0.04
max
0.77
0.57
(2
×
)
3
1
4
6
0.65
(4
×
)
2.1
1.9
0.54
0.44
(2
×
)
0.35
0.25
(6
×
)
0.3
0.2
Dimensions in mm
10-05-31
Fig 18.
Package outline SOT1118 (DFN2020-6)
PMDPB80XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
10 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6
×
) (6
×
)
solder lands
solder paste
0.875
1.05 1.15
(2
×
) (2
×
)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
0.72
(6
×
)
(2
×
)
0.45
0.82
(6
×
)
(2
×
)
sot1118_fr
Fig 19.
Reflow soldering footprint for SOT1118 (DFN2020-6)
PMDPB80XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
11 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
11. Revision
history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMDPB80XP v.1
20120530
Product data sheet
–
–
PMDPB80XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
12 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
12. Legal information
12.1 Data
sheet status
Document status
[1] [2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Right to make changes
— Nexperia reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use
— Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
12.3 Disclaimers
Limited warranty and liability
— Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the
customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever,
Nexperia’s
aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
PMDPB80XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
13 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
Terms and conditions of commercial sale
— Nexperia
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications
such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications
beyond Nexperia’s
standard warranty
and Nexperia’s product specifications
.
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the
product without Nexperia’s warranty
of the
13. Contact information
PMDPB80XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 May 2012
14 of 15
PMDPB80XP
Nexperia
20 V, dual P-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics
. . . . . . . . . . . . . . . . . . .4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
1
0
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
30 May 2012
