Nexperia-PMGD290UCEAX

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PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

28 March 2014

Product data sheet

1. General

description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very

small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features

and benefits

Very fast switching

•

Trench MOSFET technology

2 kV ESD protection

AEC-Q101 qualified

3. Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

Automotive applications

4. Quick

reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel), Static characteristics

DSon

drain-source on-state

resistance

= 4.5 V; I

= 500 mA; T

= 25 °C

–

290

380

mΩ

TR2 (P-channel), Static characteristics

DSon

drain-source on-state

resistance

= -4.5 V; I

= -400 mA; T

= 25 °C

–

670

850

mΩ

TR1 (N-channel)

drain-source voltage

gate-source voltage

drain current

= 25 °C

–

-8

–

= 4.5 V; T

amb

= 25 °C

[1]

725

TR2 (P-channel)

drain-source voltage

= 25 °C

–

-20

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

Symbol

Parameter

Conditions

Min

-8

Typ

Max

Unit

gate-source voltage

drain current

–

= -4.5 V; T

amb

= 25 °C

[1]

–

-500

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm

[1]

5. Pinning

information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

source TR1

gate TR1

drain TR2

source TR2

gate TR2

TSSOP6 (SOT363)

drain TR1

017aaa262

6. Ordering

information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

SOT363

PMGD290UCEA

TSSOP6

plastic surface-mounted package; 6 leads

7. Marking

Table 4.

Marking codes

Type number

Marking code

[1]

PMGD290UCEA

YD%

[1] %

= placeholder for manufacturing site code

8. Limiting

values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1 (N-channel)

drain-source voltage

gate-source voltage

= 25 °C

–

-8

PMGD290UCEA

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Product data sheet

28 March 2014

2 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

Symbol

Parameter

Conditions

Min

Max

725

450

Unit

drain current

= 4.5 V; T

amb

= 25 °C

= 4.5 V; T

amb

= 100 °C

amb

= 25 °C; single pulse; t

≤ 10 µs

amb

= 25 °C

[1]

–

tot

peak drain current

total power dissipation

[2]

[1]

280

320

990

= 25 °C

TR1 (N-channel), Source-drain diode

source current

TR1 N-channel), ESD maximum rating

amb

= 25 °C

[1]

[3]

–

370

ESD

electrostatic discharge voltage

HBM

2000

TR2 (P-channel)

drain-source voltage

gate-source voltage

drain current

= 25 °C

–

-20

-8

–

= -4.5 V; T

amb

= 25 °C

= -4.5 V; T

amb

= 100 °C

amb

= 25 °C; single pulse; t

≤ 10 µs

amb

= 25 °C

[1]

-500

-320

-2

–

tot

peak drain current

–

total power dissipation

[2]

[1]

–

280

320

990

–

= 25 °C

–

TR2 (P-channel), Source-drain diode

source current

TR2 (P-channel), ESD maximum rating

amb

= 25 °C

[1]

[3]

[2]

–

-370

ESD

Per device

tot

electrostatic discharge voltage

HBM

2000

total power dissipation

junction temperature

ambient temperature

storage temperature

amb

= 25 °C

–

445

150

°C

-55

-65

amb

stg

°C

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm

[1]

[2] Device

mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard

footprint.

[3] Measured

between all pins.

PMGD290UCEA

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Product data sheet

28 March 2014

3 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

017aaa123

017aaa124

120

der

(%)

der

(%)

– 75

– 25

125

175

– 25

125

175

T (°C)

Fig. 1.

Normalized total power dissipation as a

function of junction temperature

Fig. 2.

Normalized continuous drain current as a

function of junction temperature

aaa-007202

Limit R

= V

DSon

(A)

= 1 ms

-1

= 10 ms

DC; T

= 25 °C

DC; T

= 25 °C;

amb

drain mounting pad 1 cm

= 100 ms

-2

-1

(V)

= single pulse

Fig. 3.

TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a

function of drain-source voltage

PMGD290UCEA

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Product data sheet

28 March 2014

4 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

aaa-007203

-10

Limit R

= V

DSon

(A)

-1

= 1 ms

-1

= 10 ms

-10

DC; T

= 25 °C

DC; T

= 25 °C;

amb

drain mounting pad 1 cm

= 100 ms

-2

-10

-1

-10

-1

-10

(V)

= single pulse

Fig. 4.

TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a

function of drain-source voltage

9. Thermal

characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel)

th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

–

390

340

445

390

K/W

th(j-sp)

thermal resistance

from junction to solder

point

–

130

K/W

TR2 (P-channel)

th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

–

390

340

445

390

K/W

th(j-sp)

thermal resistance

from junction to solder

point

–

130

K/W

Per device

th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

–

300

K/W

[1] Device

mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard

footprint.

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm

[2]

PMGD290UCEA

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Product data sheet

28 March 2014

5 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

017aaa034

duty cycle = 1

0.75

th(j-a)

(K/W)

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

– 3

– 2

– 1

(s)

FR4 PCB, standard footprint

Fig. 5.

TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa035

duty cycle = 1

th(j-a)

(K/W)

0.75

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

– 3

– 2

– 1

(s)

FR4 PCB, mounting pad for drain 1 cm

Fig. 6.

TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMGD290UCEA

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Product data sheet

28 March 2014

6 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

017aaa034

duty cycle = 1

0.75

th(j-a)

(K/W)

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

– 3

– 2

– 1

(s)

FR4 PCB, standard footprint

Fig. 7.

TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa035

duty cycle = 1

th(j-a)

(K/W)

0.75

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

– 3

– 2

– 1

(s)

FR4 PCB, mounting pad for drain 1 cm

Fig. 8.

TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMGD290UCEA

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Product data sheet

28 March 2014

7 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

10. Characteristics

Table 7.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel), Static characteristics

(BR)DSS

drain-source

= 250 µA; V

= 0 V; T

= 25 °C

–

breakdown voltage

GSth

gate-source threshold

= 250 µA; V

= V

; T

= 25 °C

voltage

0.5

0.75

0.95

DSS

drain leakage current

= 20 V; V

= 0 V; T

= 25 °C

= 20 V; V

= 0 V; T

= 150 °C

–

µA

GSS

gate leakage current

= 8 V; V

= 0 V;

-40 °C < T

< 150 °C

= -8 V; V

= 0 V;

-40 °C < T

< 150 °C

–

-10

µA

DSon

drain-source on-state

resistance

= 4.5 V; I

= 500 mA; T

= 25 °C

= 4.5 V; I

= 500 mA; T

= 150 °C

= 2.5 V; I

= 200 mA; T

= 25 °C

= 1.8 V; I

= 10 mA; T

= 25 °C

= 10 V; I

= 200 mA; T

= 25 °C

–

290

460

420

0.6

380

610

620

1.1

–

mΩ

transfer conductance

1.6

TR1 (N-channel), Dynamic characteristics

G(tot)

iss

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

= 10 V; I

= 500 mA; V

= 4.5 V;

= 25 °C

–

0.45

0.15

0.68

–

= 10 V; f = 1 MHz; V

= 0 V;

= 25 °C

–

oss

rss

reverse transfer

capacitance

–

d(on)

d(off)

turn-on delay time

rise time

= 10 V; R

= 250 Ω; V

= 4.5 V;

G(ext)

= 6 Ω; T

= 25 °C

–

turn-off delay time

fall time

172

–

TR1 (N-channel), Source-drain diode characteristics

source-drain voltage

= 300 mA; V

= 0 V; T

= 25 °C

0.48

-20

0.77

–

1.2

–

TR2 (P-channel), Static characteristics

(BR)DSS

drain-source

= -250 µA; V

= 0 V; T

= 25 °C

breakdown voltage

PMGD290UCEA

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Product data sheet

28 March 2014

8 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

GSth

gate-source threshold

= -250 µA; V

= V

; T

= 25 °C

voltage

-0.5

-0.8

-1.3

DSS

drain leakage current

= -20 V; V

= 0 V; T

= 25 °C

= -20 V; V

= 0 V; T

= 150 °C

–

-1

µA

-10

GSS

gate leakage current

= 8 V; V

= 0 V;

-40 °C < T

< 150 °C

= -8 V; V

= 0 V;

-40 °C < T

< 150 °C

–

-10

µA

DSon

drain-source on-state

resistance

= -4.5 V; I

= -400 mA; T

= 25 °C

= -4.5 V; I

= -400 mA; T

= 150 °C

= -2.5 V; I

= -200 mA; T

= 25 °C

= -1.8 V; I

= -10 mA; T

= 25 °C

= -10 V; I

= -200 mA; T

= 25 °C

–

670

1.1

1.2

1.8

610

850

1.4

1.5

2.8

–

mΩ

transfer conductance

TR2 (P-channel), Dynamic characteristics

G(tot)

iss

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

= -10 V; I

= -400 mA;

= -4.5 V; T

= 25 °C

–

0.76

0.28

0.18

1.14

–

= -10 V; f = 1 MHz; V

= 0 V;

= 25 °C

–

oss

rss

reverse transfer

capacitance

–

d(on)

d(off)

turn-on delay time

rise time

= -10 V; R

= 250 Ω; V

= -4.5 V;

G(ext)

= 6 Ω; T

= 25 °C

–

turn-off delay time

fall time

160

–

TR2 (P-channel), Source-drain diode characteristics

source-drain voltage

= -300 mA; V

= 0 V; T

= 25 °C

-0.48 -0.84 -1.2

PMGD290UCEA

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Product data sheet

28 March 2014

9 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

017aaa351

017aaa352

– 3

0.7

4.5 V

2.5 V

1.8 V

(A)

0.6

= 1.6 V

(A)

0.5

0.4

0.3

0.2

0.1

– 4

– 5

– 6

(1)

(2)

(3)

1.4 V

1.2 V

1.0 V

0.0

0.00

0.25

0.50

0.75

1.00

1.25

(V)

= 25 °C

= 25 °C; V

= 5 V

(1) minimum values

(2) typical values

Fig. 9.

TR1; Output characteristics: drain current as a

function of drain-source voltage; typical values

(3) maximum values

Fig. 10.

TR1; Sub-threshold drain current as a function

of gate-source voltage

017aaa353

017aaa354

2.0

DSon

(Ω)

DSon

(Ω)

(1)

(2)

(3)

1.5

1.0

0.5

0.0

1.5

1.0

0.5

0.0

(4)

(1)

(2)

(5)

(6)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

(A)

(V)

= 25 °C

= 400 mA

(1) T

= 150 °C

(2) T

= 25 °C

(1) V

= 1.3 V

(2) V

= 1.4 V

(3) V

= 1.6 V

(4) V

= 1.8 V

(5) V

= 2.5 V

(6) V

= 4.5 V

Fig. 12.

TR1; Drain-source on-state resistance as a

function of gate-source voltage; typical values

Fig. 11.

TR1; Drain-source on-state resistance as a

function of drain current; typical values

PMGD290UCEA

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Product data sheet

28 March 2014

10 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

017aaa355

017aaa356

0.7

1.75

(A)

0.6

1.50

0.5

0.4

0.3

0.2

0.1

0.0

1.25

1.00

0.75

0.50

(2)

(1)

0.0

0.5

1.0

1.5

2.0

2.5

(V)

-60

120

180

T (°C)

> I

× R

DSon

(1) T

= 25 °C

Fig. 14.

TR1; Normalized drain-source on-state

resistance as a function of junction

temperature; typical values

(2) T

= 150 °C

Fig. 13.

TR1; Transfer characteristics: drain current as a

function of gate-source voltage; typical values

017aaa357

017aaa358

1.25

GS(th)

(V)

(1)

1.00

0.75

0.50

0.25

0.00

(pF)

(1)

(2)

(3)

– 1

-60

120

180

T (°C)

(V)

= 0.25 mA; V

= V

(1) maximum values

(2) typical values

f = 1 MHz; V

= 0 V

(1) C

iss

(2) C

oss

(3) minimum values

(3) C

rss

Fig. 15.

TR1; Gate-source threshold voltage as a

function of junction temperature

Fig. 16.

TR1; Input, output and reverse transfer

capacitances as a function of drain-source

voltage; typical values

PMGD290UCEA

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Product data sheet

28 March 2014

11 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

017aaa359

(V)

GS(pl)

GS(th)

GS1

GS2

G(tot)

017aaa137

Fig. 18.

Gate charge waveform definitions

0.0

0.1

0.2

0.3

0.4

0.5

(nC)

= 0.5 A; V

= 10 V; T

amb

= 25 °C

Fig. 17.

TR1; Gate-source voltage as a function of gate

charge; typical values

017aaa360

017aaa363

0.7

(A)

0.6

-0.5

-4.5 V

-2.5 V

-2.0 V

(A)

-0.4

= -1.8 V

0.5

0.4

0.3

0.2

0.1

0.0

-0.3

-0.2

-0.1

0.0

(1)

(2)

-1.6 V

-1.4 V

0.0

0.2

0.4

0.6

0.8

1.0

(V)

-1

-2

-3

-4

(V)

= 0 V

= 25 °C

(1) T

= 150 °C

(2) T

= 25 °C

Fig. 20.

TR2; Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig. 19.

TR1; Source current as a function of source-

drain voltage; typical values

PMGD290UCEA

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Product data sheet

28 March 2014

12 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

017aaa364

017aaa365

-3

-10

DSon

(Ω)

(1)

(2)

(3)

(A)

-4

-5

-6

-10

(1)

(2)

(3)

(4)

(5)

-10

0.0

-0.5

-1.0

-1.5

0.0

-0.1

-0.2

-0.3

-0.4

-0.5

(V)

(A)

= 25 °C; V

= -5 V

(1) minimum values

(2) typical values

= 25 °C

(1) V

= -1.5 V

(2) V

= -1.8 V

(3) V

= -2.0 V

(4) V

= -2.5 V

(5) V

= -4.5 V

(3) maximum values

Fig. 21.

TR2; Sub-threshold drain current as a function

of gate-source voltage

Fig. 22.

TR2; Drain-source on-state resistance as a

function of drain current; typical values

017aaa366

017aaa367

-0.5

DSon

(Ω)

(A)

-0.4

-0.3

-0.2

-0.1

0.0

(1)

(2)

(1)

(2)

-4

-1

-2

-3

-5

0.0

-0.5

-1.0

-1.5

-2.0

(V)

= -400 mA

(1) T

= 150 °C

(2) T

= 25 °C

> I

× R

DSon

(1) T

= 25 °C

(2) T

= 150 °C

Fig. 23.

TR2; Drain-source on-state resistance as a

function of gate-source voltage; typical values

Fig. 24.

TR2; Transfer characteristics: drain current as a

function of gate-source voltage; typical values

PMGD290UCEA

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Product data sheet

28 March 2014

13 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

017aaa368

017aaa369

2.0

-1.5

(1)

GS(th)

(V)

1.5

1.0

0.5

-1.0

-0.5

0.0

(2)

(3)

0.0

-60

120

180

-60

120

180

T (°C)

= -0.25 mA; V

= V

(1) maximum values

(2) typical values

Fig. 25.

TR2; Normalized drain-source on-state

resistance as a function of ambient

temperature; typical values

(3) minimum values

Fig. 26.

TR2; Gate-source threshold voltage as a

function of junction temperature

017aaa370

017aaa371

-5

(1)

(V)

-4

-3

-2

-1

(pF)

(2)

(3)

-10

-1

-10

0.0

0.2

0.4

0.6

0.8

(V)

Q (nC)

f = 1 MHz; V

= 0 V

(1) C

iss

= -0.4 A; V

= -10 V; T

amb

= 25 °C

Fig. 28.

TR2; Gate-source voltage as a function of gate

charge; typical values

(2) C

oss

(3) C

rss

Fig. 27.

TR2; Input, output and reverse transfer

capacitances as a function of drain-source

voltage; typical values

PMGD290UCEA

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Product data sheet

28 March 2014

14 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

017aaa372

-0.5

(A)

-0.4

GS(pl)

-0.3

-0.2

-0.1

0.0

GS(th)

GS1

GS2

(1)

(2)

G(tot)

017aaa137

Fig. 29.

Gate charge waveform definitions

0.0

-0.2

-0.4

-0.6

-0.8

-1.0

(V)

= 0 V

(1) T

amb

= 150 °C

(2) T

amb

= 25 °C

Fig. 30.

TR2; Source current as a function of source-

drain voltage; typical values

PMGD290UCEA

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Product data sheet

28 March 2014

15 / 21

Nexperia

PMGD290UCEA

20 / 20

25 / 500 mA N/P-channel Trench MOSFET

11. Test

information

duty cycle δ =

006aaa812

Fig. 31.

Duty cycle definition

11.1 Quality

information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 – Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

12. Package outline

2.2

1.8

1.1

0.8

0.45

0.15

2.2 1.35

2.0 1.15

pin 1

index

0.25

0.10

0.3

0.2

0.65

1.3

Dimensions in mm

06-03-16

Fig. 32.

Package outline TSSOP6 (SOT363)

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13. Soldering

2.65

solder lands

0.4 (2×)

1.5

2.35

0.6

0.5

solder resist

(4×)

solder paste

0.5

(4×)

0.6

(2×)

occupied area

0.6

(4×)

Dimensions in mm

1.8

sot363_fr

Fig. 33.

Reflow soldering footprint for TSSOP6 (SOT363)

1.5

solder lands

2.5

0.3

4.5

solder resist

occupied area

1.5

Dimensions in mm

preferred transport

direction during soldering

1.3

2.45

5.3

sot363_fw

Fig. 34.

Wave soldering footprint for TSSOP6 (SOT363)

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14. Revision history

Table 8.

Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

PMGD290UCEA v.3

Modifications:

20140328

Product data sheet

–

PMGD290UCEA v.2

ble 7: I

GSS

parameter unit corrected

•

PMGD290UCEA v.2

PMGD290UCEA v.1

20130418

20130415

Product data sheet

–

PMGD290UCEA v.1

–

PMGD290UCEA

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In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including – without limitation –

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

15. Legal information

15.1 Data

sheet status

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the

Terms and conditions of commercial sale

of Nexperia.

Document

Product

Definition

status

[1][2]

status

[3]

Objective

[short] data

sheet

Development This

document contains data from

the objective specification for product

development.

Right to make changes

— Nexperia reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preliminary

[short] data

sheet

Qualification This

document contains data from the

preliminary specification.

Suitability for use in automotive applications

— This Nexperia

product has been qualified for use in automotive

Product

[short] data

sheet

Production

This document contains the product

specification.

applications. Unless otherwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia and its suppliers accept no liability for

inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

[1] Please

consult the most recently issued document before initiating or

completing a design.

[2] The

term ‘short data sheet’ is explained in section “Definitions”.

[3] The

product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

Quick reference data

— The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

15.2 Definitions

Applications

— Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Preview

— The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Customers are responsible for the design and operation of their

applications and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the Nexperia product is suitable and fit for the

Draft

— The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

Short data sheet

— A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications

short data sheet, the full data sheet shall prevail.

and the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Product specification

— The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

Limiting values

— Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

15.3 Disclaimers

Terms and conditions of commercial sale

— Nexperia

Limited warranty and liability

— Information in this document is believed

to be accurate and reliable. However, Nexperia does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no

responsibility for the content in this document if provided by an information

source outside of Nexperia.

products are sold subject to the general terms and conditions of commercial

sale, as published at

http://www.nexperia.com/profile/terms

, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

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No offer to sell or license

— Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control

— This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Translations

— A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

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16. Contents

General description ………………………………………..

Features and benefits ……………………………………..1

Applications …………………………………………………..

Quick reference data ……………………………………… 1

Pinning information ……………………………………….

Ordering information ……………………………………..

Marking …………………………………………………………

Limiting values ……………………………………………….2

Thermal characteristics …………………………………..5

Characteristics ………………………………………………

Test information …………………………………………..

11.1

Quality information ……………………………………… 16

Package outline …………………………………………… 16

Soldering ……………………………………………………..

Revision history …………………………………………..

Legal information ………………………………………….19

Data sheet status ……………………………………….. 19

Definitions …………………………………………………..19

Disclaimers ………………………………………………..

Trademarks ……………………………………………….. 20

15.1

15.2

15.3

15.4

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

28 March 2014

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