Nexperia-PMH550UNEH

Part #Nexperia-PMH550UNEH
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Nexperia-PMH550UNEH
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
8 March 2019  
Product data sheet  
1. General
 
description  
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3  
(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.  
2. Features
 
and benefits  
•
Low threshold voltage  
•
•
•
•
Very fast switching  
Trench MOSFET technology  
ElectroStatic Discharge (ESD) protection > 2 kV HBM  
Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm  
3. Applications  
•
•
•
•
Relay driver  
High-speed line driver  
Low-side load switch  
Switching circuits  
4. Quick
 
reference data  
Table 1. Quick reference data  
Symbol  
V

DS  

Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
T

j

= 25 °C  
–
–
–
–
V

GS  

-8  
–
8
V
I

D  

V

GS

= 4.5 V; T

amb

= 25 °C  
770  
mA  
Static characteristics  
R

DSon

drain-source on-state  
resistance  
V

GS

= 4.5 V; I

D

= 770 mA; T

j

= 25 °C  
–
550  
670  
mΩ  
[1] Device
 
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm

2

.  
 
 
 
 
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
5. Pinning
 
information  
Table 2. Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
D
G
S
D
gate  
2
1
2
source  
drain  
3
G
3
Transparent top view  
S
017aaa255  
DFN0606-3 (SOT8001)  
6. Ordering
 
information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
PMH550UNE  
DFN0606-3  
plastic, leadless ultra small package; 3 terminals; body 0.62 x  
0.62 x 0.37 mm  
SOT8001  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code  
PMH550UNE  
0001 0010  
reading direction  
pin 1 indication  
marking code  
(example)  
reading example:  
1011  
1101  
reading direction  
aaa-029459  
Fig. 1.
 
DFN0606-3 (SOT8001) binary marking code description  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
2 / 14  
 
 
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
8. Limiting
 
values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
V

DS  

Parameter  
Conditions  
Min  
Max  
30  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
T

j

= 25 °C  
–
V

GS  

-8  
8
V
I

D  

V

GS

= 4.5 V; T

amb

= 25 °C  
V

GS

= 4.5 V; T

amb

= 100 °C  
T

amb

= 25 °C; single pulse; t

p

≤ 10
 
µs  
T

amb

= 25 °C  
–
770  
485  
3
mA  
mA  
A
–
I

DM  

P

tot  

peak drain current  
–
total power dissipation  
–
380  
710  
2.8  
150  
150  
150  
mW  
mW  
W
–
T

sp

= 25 °C  
–
T

j  

junction temperature  
ambient temperature  
storage temperature  
-55  
-55  
-65  
°C  
T

amb  

T

stg  

°C  
°C  
Source-drain diode  
I

S

source current  
T

amb

= 25 °C  
–
680  
mA  
[1] Device
 
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm

2

.  
[2] Device
 
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
017aaa123  
017aaa124  
120  
120  
P
der  
(%)  
I
der  
(%)  
80  
80  
40  
40  
0
– 75  
0
– 75  
– 25  
25  
75  
125  
175  
– 25  
25  
75  
125  
175  
T (°C)  
j
T (°C)  
j
Fig. 2.
 
Normalized total power dissipation as a  
function of junction temperature  
Fig. 3.
 
Normalized continuous drain current as a  
function of junction temperature  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
3 / 14  
 
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
aaa-029707  
10  
I
Limit R  
= V
 
/I  
DS D  
D
DSon  
t
p
= 10 µs  
(A)  
1
100 µs  
1 ms  
DC; T
 
= 25 °C  
sp  
-1  
10  
10  
2
DC; T  
= 25 °C; 1 cm  
amb  
10 ms  
100 ms  
-2  
-1  
2
10  
1
10  
10  
V
(V)  
DS  
Fig. 4.
 
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-  
source voltage  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
4 / 14  

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
9. Thermal
 
characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
285  
150  
38  
Max  
330  
175  
45  
Unit  
K/W  
K/W  
K/W  
R

th(j-a)  

thermal resistance from
 
in free air  
junction to ambient  
–
–
–
R

th(j-sp)  

thermal resistance from  
junction to solder point  
[1] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm

2

.  
aaa-029708  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.50  
0.33  
0.20  
0.25  
0.10  
2
10  
0.05  
0.02  
0.01  
0
10  
10  
-3  
-2  
-1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, standard footprint  
Fig. 5.
 
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
aaa-029709  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.50  
2
10  
0.33  
0.25  
0.20  
0.10  
0.05  
0.02  
0.01  
0
10  
10  
-3  
-2  
-1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, mounting pad for drain 1 cm

2  

Fig. 6.
 
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
5 / 14  
 
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Static characteristics  
V

(BR)DSS

drain-source  
breakdown voltage  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C  
30  
–
–
V
V
V

GSth  

gate-source threshold
 
I

D

= 250 µA; V

DS

= V

GS

; T

j

= 25 °C  
voltage  
0.45  
0.7  
0.95  
I

DSS  

I

GSS  

drain leakage current  
gate leakage current  
V

DS

= 30 V; V

GS

= 0 V; T

j

= 25 °C  
V

GS

= 8 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= -8 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= 4.5 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= -4.5 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= 2.5 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= -2.5 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= 4.5 V; I

D

= 770 mA; T

j

= 25 °C  
V

GS

= 4.5 V; I

D

= 770 mA; T

j

= 150 °C  
V

GS

= 2.5 V; I

D

= 770 mA; T

j

= 25 °C  
V

GS

= 1.8 V; I

D

= 80 mA; T

j

= 25 °C  
V

GS

= 1.5 V; I

D

= 10 mA; T

j

= 25 °C  
V

DS

= 10 V; I

D

= 770 mA; T

j

= 25 °C  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1
µA  
µA  
µA  
µA  
µA  
nA  
nA  
mΩ  
–
5
–
-5  
–
1
–
-1  
–
100  
-100  
670  
–
R

DSon  

drain-source on-state  
resistance  
550  
990  
660  
770  
890  
2.2  
1200 mΩ  
900 mΩ  
1120 mΩ  
1500 mΩ  
g

fs  

forward  
–
S
transconductance  
R

G  

gate resistance  
f = 1 MHz  
–
19  
–
Ω
Dynamic characteristics  
Q

G(tot)  

Q

GS  

Q

GD  

C

iss  

total gate charge  
V

DS

= 15 V; I

D

= 770 mA; V

GS

= 4 V;  
T

j

= 25 °C  
–
–
–
–
–
–
0.38  
0.1  
0.4  
nC  
nC  
nC  
pF  
pF  
pF  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
–
–
–
–
–
0.1  
V

DS

= 15 V; f = 1 MHz; V

GS

= 0 V;  
T

j

= 25 °C  
30.3  
5.1  
C

oss  

C

rss  

reverse transfer  
capacitance  
3.7  
t

d(on)  

t

r  

t

d(off)  

t

f  

turn-on delay time  
rise time  
V

DS

= 15 V; I

D

= 770 mA; V

GS

= 4 V;  
R

G(ext)

= 6 Ω; T

j

= 25 °C  
–
–
–
–
1
2
4
2
–
–
–
–
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
Source-drain diode  
V

SD  

source-drain voltage  
I

S

= 680 mA; V

GS

= 0 V; T

j

= 25 °C  
–
0.9  
1.2  
V
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
6 / 14  
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
aaa-029710  
3.0 V  
aaa-029711  
-3  
-4  
-5  
-6  
2.4  
10  
D
V
= 4.5 V  
GS  
2.5 V  
I
I
D
(A)  
(A)  
min  
typ  
max  
1.6  
10  
2.0 V  
1.8 V  
0.8  
10  
10  
1.5 V  
1.2 V  
0
0
1
2
3
4
0
0.5  
1.0  
1.5  
V
(V)  
V
(V)  
GS  
DS  
T

j

= 25 °C  
T

j

= 25 °C; V

DS

= 5 V  
Fig. 7.
 
Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig. 8.
 
Sub-threshold drain current as a function of  
gate-source voltage  
aaa-029712  
aaa-029713  
2.0  
3
1.8 V  
2.5 V  
3.0 V  
R
(
DSon  
)
R
DS(on)  
(
)
1.5 V  
2.0 V  
1.5  
2
1
0
1.0  
0.5  
0
V
= 4.5 V  
GS  
T = 150 °C  
j
T
=
25 °C  
j
0
1
2
3
0
1
2
3
4
5
I
(A)  
V
(V)  
GS  
D
T

j

= 25 °C  
I

D

= 0.6 A  
Fig. 9.
 
Drain-source on-state resistance as a function
 
Fig. 10.
 
Drain-source on-state resistance as a function  
of drain current; typical values  
of gate-source voltage; typical values  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
7 / 14  

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
aaa-029714  
aaa-029715  
1.0  
2.0  
1.5  
1.0  
0.5  
0
I
D
(A)  
a
0.8  
0.6  
0.4  
0.2  
0
T = 150 °C  
j
T
=
25 °C  
j
0
1
2
3
-60  
0
60  
120  
180  
V
(V)  
T (°C)  
j
GS  
V

DS

> I

D

× R

DSon  

Fig. 11.
 
Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig. 12.
 
Normalized drain-source on-state resistance  
as a function of junction temperature; typical  
values  
aaa-029716  
aaa-029717  
3
1.5  
10  
C
(pF)  
V
GS(th)  
(V)  
2
1.0  
0.5  
0
10  
max  
typ  
C
iss  
10  
min  
C
C
oss  
rss  
1
-1  
10  
2
-60  
0
60  
120  
180  
1
10  
10  
T (°C)  
j
V
(V)  
DS  
I

D

= 250 µA; V

DS

= V

GS  

f = 1 MHz; V

GS

= 0 V  
Fig. 13.
 
Gate-source threshold voltage as a function of
 
Fig. 14.
 
Input, output and reverse transfer capacitances  
junction temperature  
as a function of drain-source voltage; typical  
values  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
8 / 14  

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
aaa-029718  
5
V
DS  
V
GS  
(V)  
I
D
4
3
2
1
0
V
V
GS(pl)  
GS(th)  
V
GS  
Q
GS2  
Q
GS1  
Q
Q
GD  
G(tot)  
GS  
Q
003aaa508  
Fig. 16.
 
Gate charge waveform definitions  
0
0.1  
0.2  
0.3  
0.4  
Q
0.5  
(nC)  
G
I

D

= 0.6 A; V

DS

= 15 V; T

amb

= 25 °C  
Fig. 15.
 
Gate-source voltage as a function of gate  
charge; typical values  
aaa-029719  
0.6  
I
S
(A)  
T =
 
150 °C  
j
0.4  
0.2  
T
=
25 °C  
j
0
0
0.4  
0.8  
1.2  
V
(V)  
SD  
V

GS

= 0 V  
Fig. 17.
 
Source current as a function of source-drain voltage; typical values  
11. Test
 
information  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig. 18.
 
Duty cycle definition  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
9 / 14  
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
12. Package
 
outline  
DFN0606-3, plastic, leadless ultra small package; 3 terminals; body 0.62 x 0.62 x 0.37 mm  
SOT8001  
A
B
D
u
C
2x  
A
1
E
pin 1  
index area  
detail X  
u
C
2x  
v
C
C
A B  
b (2x)  
2
pin 1  
w
index area  
e
seating plane  
1
u
C
C
A
L (2x)  
e
1
X
e
2
L
1
Y
C
3
v
w
C
C
A
B
b
1
0
0.5 mm  
scale  
Dimensions (mm are the original dimensions)  
Unit  
A
A
b
b
1
D
E
e
e
e
L
L
1
u
v
w
Y
1
1
2
max 0.40 0.04 0.20 0.55  
0.20 0.26  
nom 0.37  
min 0.34  
0.15 0.50 0.62 0.62
 
0.35 0.186
 
0.155 0.15
 
0.21 0.05  
0.1  
0.05 0.05  
mm  
0.10 0.45  
IEC  
0.10 0.16  
sot8001_po  
References  
Outline  
version  
European  
projection  
Issue date  
JEDEC  
– – –  
JEITA  
18-12-03  
18-12-05  
SOT8001  
Fig. 19.
 
Package outline DFN0606-3 (SOT8001)  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
10 / 14  
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
13. Soldering  
Footprint information for reflow soldering of DFN0606-3 package  
SOT8001  
0.80  
0.70  
0.60  
0.55  
0.35 0.30  
0.21  
0.98 0.88  
0.13  
0.78  
0.245  
0.30  
0.35  
0.15  
0.55  
0.20  
occupied area  
solder lands  
solder resist  
solder paste  
Dimensions in mm  
18-11-30  
Issue date  
sot8001_fr  
Fig. 20.
 
Reflow soldering footprint for DFN0606-3 (SOT8001)  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
11 / 14  
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
14. Revision
 
history  
Table 8. Revision history  
Data sheet ID  
Release date  
20190308  
Data sheet status  
Change notice
 
Supersedes  
PMH550UNE v.1  
Product data sheet  
–
–
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
12 / 14  
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
injury, death or severe property or environmental damage. Nexperia and its  
suppliers accept no liability for inclusion and/or use of Nexperia products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
15. Legal
 
information  
Quick reference data
— The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Data sheet status  
Document status
 
Product  
Definition  
Applications
— Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
status

Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please
 
consult the most recently issued document before initiating or  
completing a design.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Nexperia products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Nexperia does not accept any  
liability in this respect.  
[2] The
 
term ‘short data sheet’ is explained in section “Definitions”.  
[3] The
 
product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at

.  
Definitions  
Limiting values
— Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Draft
— The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Short data sheet
— A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the relevant  
full data sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of commercial sale
— Nexperia products are  
sold subject to the general terms and conditions of commercial sale, as  
published at

, unless otherwise agreed  
in a valid written individual agreement. In case an individual agreement is  
concluded only the terms and conditions of the respective agreement shall  
apply. Nexperia hereby expressly objects to applying the customer’s general  
terms and conditions with regard to the purchase of Nexperia products by  
customer.  
Product specification
— The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be  
valid in which the Nexperia product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
No offer to sell or license
— Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Export control
— This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Disclaimers  
Limited warranty and liability
— Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no responsibility  
for the content in this document if provided by an information source outside  
of Nexperia.  
Non-automotive qualified products
— Unless this data sheet expressly  
states that this specific Nexperia product is automotive qualified, the  
product is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Nexperia  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
In no event shall Nexperia be liable for any indirect, incidental, punitive,  
special or consequential damages (including – without limitation – lost  
profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without Nexperia’s warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s own risk,  
and (c) customer fully indemnifies Nexperia for any liability, damages or failed  
product claims resulting from customer design and use of the product for  
automotive applications beyond Nexperia’s standard warranty and Nexperia’s  
product specifications.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
T
e
rms and conditions of commercial sale of Nexperia.  
Translations
— A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Right to make changes
— Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Trademarks  
Suitability for use
— Nexperia products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction  
of an Nexperia product can reasonably be expected to result in personal  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
13 / 14  
 

Nexperia  
PMH550UNE  
30
V
,
N
-channel Trench MOSFET  
Contents  

©

Nexperia B.
V
.
2
019. All rights reserved  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 8 March 2019  
©
PMH550UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.
V
.
2
019. All rights reserved  
Product data sheet  
8 March 2019  
14 / 14