Nexperia-PMPB215ENEA-FX
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PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
18 December 2013
Product data sheet
1. General
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features
and benefits
Trench MOSFET technology
•
•
•
•
•
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
3. Applications
Relay driver
•
•
•
•
High-speed line driver
Low-side load switch
Switching circuits
4. Quick
reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
80
Unit
V
V
DS
V
GS
I
D
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
–
–
–
-20
–
20
V
V
GS
= 10 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 10 V; I
D
= 1.9 A; T
j
= 25 °C
2.8
A
Static characteristics
R
DSon
drain-source on-state
resistance
–
175
230
mΩ
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
5. Pinning
information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
1
2
3
4
5
6
7
8
D
D
G
S
D
D
D
S
drain
drain
gate
1
6
5
4
7
2
3
Transparent top view
G
8
source
drain
drain
drain
source
DFN2020MD-6 (SOT1220)
S
017aaa255
6. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMPB215ENEA
DFN2020MD-6 DFN2020MD-6:
plastic thermal enhanced ultra thin small outline
SOT1220
package; no leads; 6 terminals
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB215ENEA
2B
8. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
80
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
V
GS
-20
20
V
I
D
V
GS
= 10 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 10 V; T
amb
= 25 °C
–
–
–
–
2.8
1.9
1.2
7.6
A
A
V
GS
= 10 V; T
amb
= 100 °C
A
I
DM
peak drain current
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
A
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
2 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Max
Unit
E
DS(AL)S
non-repetitive drain-source
avalanche energy
T
j(init)
= 25 °C; I
D
= 0.27 A; DUT in
avalanche (unclamped)
–
11.3
mJ
P
tot
total power dissipation
T
amb
= 25 °C
–
1.6
W
W
W
°C
°C
°C
T
amb
= 25 °C; t ≤ 5 s
T
sp
= 25 °C
–
3.3
–
15.6
150
150
150
T
j
junction temperature
ambient temperature
storage temperature
-55
-55
-65
T
amb
T
stg
Source-drain diode
I
S
source current
T
amb
= 25 °C
–
–
0.8
A
V
ESD maximum rating
V
ESD
electrostatic discharge voltage
HBM
2000
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
[2] Measured
between all pins.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
– 75
0
– 75
– 25
25
75
125
175
– 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
3 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
aaa-008559
10
t
= 10 µs
Limit R
= V
/I
DS
p
DSon
D
I
D
(A)
t
= 100 µs
1
p
-1
DC; T
= 25 °C
sp
10
10
t
t
= 1 ms
p
p
DC; T
= 25 °C;
amb
drain mounting pad 6 cm
2
= 10 ms
t
= 100 ms
p
-2
-1
2
10
1
10
10
V
(V)
DS
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal
characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
245
68
Max
282
78
Unit
K/W
K/W
K/W
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
–
–
–
–
in free air; t ≤ 5 s
33
38
R
th(j-sp)
thermal resistance
from junction to solder
point
4
8
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
4 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
017aaa542
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
0.02
10
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
3
10
Z
th(j-a)
(K/W)
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
5 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
80
–
–
V
V
V
GSth
gate-source threshold
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
voltage
1.3
1.7
2.7
I
DSS
drain leakage current
V
DS
= 80 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 80 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 1.9 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 1.9 A; T
j
= 150 °C
V
GS
= 4.5 V; I
D
= 1.8 A; T
j
= 25 °C
V
DS
= 10 V; I
D
= 1.9 A; T
j
= 25 °C
–
–
–
–
–
–
–
–
–
–
–
1
µA
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
S
–
10
15
-15
1
I
GSS
gate leakage current
–
–
–
–
-1
R
DSon
drain-source on-state
resistance
175
340
195
7
230
445
275
–
g
fs
forward
transconductance
R
G
gate resistance
f = 1 MHz; T
j
= 25 °C
–
1
–
Ω
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
V
DS
= 40 V; I
D
= 1.9 A; V
GS
= 10 V;
T
j
= 25 °C
–
–
–
–
–
–
4.8
0.6
0.9
215
25
7.2
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
–
–
–
–
–
V
DS
= 40 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
C
oss
C
rss
reverse transfer
capacitance
15
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 40 V; I
D
= 1.9 A; V
GS
= 10 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
–
–
–
–
3.5
2
–
–
–
–
ns
ns
ns
ns
turn-off delay time
fall time
9.5
3
Source-drain diode
V
SD
source-drain voltage
I
S
= 0.8 A; V
GS
= 0 V; T
j
= 25 °C
–
0.8
1.2
V
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
6 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
aaa-008560
3.2 V
-3
-4
-5
-6
7.6
10
D
10 V
4.5 V
3.5 V
I
D
(A)
I
(A)
5.7
10
3 V
min
typ
max
3.8
1.9
0
2.8 V
10
10
V
= 2.5 V
GS
0
1
2
3
4
5
0
1
2
3
V
(V)
V
(V)
GS
DS
T
j
= 25 °C
T
j
= 25 °C; V
DS
= 10 V
Fig. 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7.
Sub-threshold drain current as a function of
gate-source voltage
aaa-008562
aaa-008563
900
900
2.5 V
2.8 V
3 V
3.2 V
R
DSon
R
DSon
(mΩ)
(mΩ)
600
600
3.5 V
4.5 V
T =
150 °C
j
300
300
V
6
= 10 V
GS
T =
25 °C
j
0
0
0
2
4
8
0
2.5
5.0
7.5
10
I
(A)
V
(V)
GS
D
T
j
= 25 °C
Fig. 8.
Drain-source on-state resistance as a function
Fig. 9.
Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
I
D
= 1.9 A
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
7 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
aaa-008564
aaa-008565
8
2.0
1.6
1.2
0.8
0.4
I
a
D
(A)
6
4
2
0
T =
150 °C
j
T =
25 °C
j
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
V
DS
> I
D
× R
DSon
Fig. 11.
Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-008566
aaa-008567
3
4
10
V
GS(th)
(V)
C
(pF)
C
iss
3
2
10
max
C
C
oss
2
1
0
typ
10
rss
min
1
10
-1
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
I
D
= 0.25 mA; V
DS
= V
GS
f = 1 MHz; V
GS
= 0 V
Fig. 12.
Gate-source threshold voltage as a function of
Fig. 13.
Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
8 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
aaa-008568
10
V
DS
V
GS
(V)
I
8
6
4
2
1
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15.
MOSFET transistor: Gate charge waveform
definitions
0
1
2
3
4
5
Q
G
(nC)
I
D
= 1.9 A; V
DS
= 40 V; T
amb
= 25 °C
Fig. 14.
Gate-source voltage as a function of gate
charge; typical values
aaa-008569
3.5
I
S
(A)
3.0
2.5
2.0
1.5
1.0
0.5
0
T =
150 °C
j
T =
25 °C
j
0
0.3
0.5
0.8
1.0
V
(V)
SD
V
GS
= 0 V
Fig. 16.
Source current as a function of source-drain voltage; typical values
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
9 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
11. Test
information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17.
Duty cycle definition
11.1 Quality
information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 – Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
0.51
0.61
0.2
0.3
0.2
0.3
3
4
5
6
0.25
0.35
1.9
2.1
2
1
1.0
1.2
1.1
1.3
0.65
1.9
2.1
Dimensions in mm
12-04-30
Fig. 18.
Package outline DFN2020MD-6 (SOT1220)
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
10 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.25 0.35 0.45
0.775
0.285
0.65
2.06
1.25
0.35 (6×)
0.65
1.35
1.05
0.25 (6×)
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot1220_fr
Fig. 19.
Reflow soldering footprint for DFN2020MD-6 (SOT1220)
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
11 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB215ENEA v.2
Modifications:
20131218
Product data sheet
–
PMPB215ENEA v.1
Product status changed
•
PMPB215ENEA v.1
20130219
Objective data sheet
–
–
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
12 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation –
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data
sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
Document
Product
Definition
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Right to make changes
— Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Suitability for use in automotive applications
— This Nexperia
product has been qualified for use in automotive
Product
[short] data
sheet
Production
This document contains the product
specification.
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
short data sheet, the full data sheet shall prevail.
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale
— Nexperia
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
13 / 15
Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
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Nexperia
PMPB215ENEA
80
V
,
s
ingle N-channel Trench MOSFET
16. Contents
1
2
3
4
5
6
7
8
9
10
11
11.1
12
13
14
15
15.1
15.2
15.3
15.4
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
18 December 2013
©
PMPB215ENEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
18 December 2013
15 / 15
