Nexperia-PMST3906-135
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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
PMST3906
40
V
,
2
00 mA PNP switching transistor
Rev. 05 — 29 April 2009
Product data sheet
1. Product
profile
1.1 General
description
PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMST3904.
1.2 Features
I
Collector current: I
C
≤ −
200 mA
I
Collector-emitter voltage: V
CEO
≤ −
40 V
I
Very small SMD plastic package
1.3 Applications
I
General amplification and switching
1.4 Quick
reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
−
40
Unit
V
V
CEO
I
C
collector-emitter voltage
open base
collector current
–
–
–
–
−
200
mA
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
3
3
2
emitter
3
collector
1
1
2
2
sym013
PMST3906
NXP Semiconductors
40
V
,
2
00 mA PNP switching transistor
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMST3906
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking
Table 4.
Marking codes
Type number
PMST3906
Marking code
[1]
*2A
[1] *
= -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
open emitter
open base
Min
Max
−
40
−
40
−
6
Unit
V
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
–
–
–
–
–
collector-emitter voltage
emitter-base voltage
collector current
V
open collector
V
−
200
−
200
mA
mA
I
CM
peak collector current
single pulse;
t
p
≤
1 ms
I
BM
peak base current
single pulse;
–
−
100
mA
t
p
≤
1 ms
[1]
P
tot
T
j
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°
C
–
200
mW
°
C
–
150
T
amb
T
stg
−
65
−
65
+150
+150
°
C
°
C
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal
characteristics
Table 6.
Thermal characteristics
Parameter
Symbol
Conditions
Min
Typ
Max Unit
625 K/W
[1]
R
th(j-a)
thermal resistance from junction
in free air
to ambient
–
–
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMST3906_5
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
2 of 10
PMST3906
NXP Semiconductors
40
V
,
2
00 mA PNP switching transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
collector-bas
e
c
ut-off I
E
= 0 A; V
CB
=
−
30 V
Min
Typ
Max
Unit
I
CBO
I
EBO
h
FE
–
–
−
50
nA
current
emitter-base cut-off
I
C
= 0 A; V
EB
=
−
6 V
current
–
–
−
50
nA
DC current gain
V
CE
=
−
1 V
I
C
=
−
0.1 mA
60
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
I
C
=
−
1 mA
80
–
I
C
=
−
10 mA
100
300
–
I
C
=
−
50 mA
60
30
–
I
C
=
−
100 mA
–
V
CEsat
collector-emitter
saturation voltage
I
C
=
−
10 mA; I
B
=
−
1 mA
I
C
=
−
50 mA; I
B
=
−
5 mA
I
C
=
−
10 mA; I
B
=
−
1 mA
I
C
=
−
50 mA; I
B
=
−
5 mA
I
C
=
−
10 mA;
−
250
−
400
−
850
−
950
35
mV
mV
mV
mV
ns
–
V
BEsat
base-emitter
saturation voltage
–
–
t
d
delay time
rise time
–
I
I
Bon
=
−
1 mA;
Boff
= 1 mA
t
r
–
35
ns
t
on
t
s
turn-on time
storage time
fall time
–
70
ns
–
225
75
ns
t
f
–
ns
t
off
C
c
turn-off time
–
300
4.5
ns
collector capacitance
I
E
= i
e
= 0 A; V
CB
=
−
5 V;
–
pF
f = 1 MHz
C
e
emitter capacitance
I
C
= i
c
= 0 A;
–
–
–
–
10
–
pF
V
EB
=
−
500 mV;
f = 1 MHz
f
T
transition frequency
I
C
=
−
10 mA;
250
–
MHz
dB
V
CE
=
−
20 V;
f = 100 MHz
NF
noise figure
I
C
=
−
100
µ
A;
4
V
CE
=
−
5 V; R
S
= 1 k
Ω
;
f = 10 Hz to 15.7 kHz
PMST3906_5
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
3 of 10
PMST3906
NXP Semiconductors
40
V
,
2
00 mA PNP switching transistor
mhc459
006aab475
600
−
250
I
C
(mA)
I
(mA) =
−
1.5
h
FE
B
−
200
−
1.35
−
1.05
(1)
−
1.20
−
0.90
400
−
150
−
100
−
0.75
−
0.45
−
0.60
−
0.30
(2)
200
(3)
−
50
−
0.15
0
−
10
0
−
1
2
3
−
1
−
10
−
10
−
10
0
−
2
−
4
−
6
−
8
−
10
(V)
I
(mA)
C
V
CE
V
CE
=
−
1 V
T
amb
= 25
°
C
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
mhc461
mhc462
−
1200
−
1200
V
(mV)
V
BEsat
(mV)
BE
−
1000
−
1000
−
800
−
600
−
400
−
200
(1)
(2)
(1)
(2)
−
800
−
600
−
400
−
200
(3)
(3)
−
1
2
3
−
1
2
3
−
10
−
1
−
10
−
10
−
10
−
10
−
1
−
10
−
10
−
10
I
(mA)
I (mA)
C
C
V
CE
=
−
1 V
I
C
/I
B
= 10
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
Fig 3.
Base-emitter voltage as a function of collector
current; typical values
Fig 4.
Base-emitter saturation voltage as a function
of collector current; typical values
PMST3906_5
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
4 of 10
PMST3906
NXP Semiconductors
40
V
,
2
00 mA PNP switching transistor
mhc463
3
−
10
V
CEsat
(mV)
(1)
(2)
2
−
10
(3)
−
10
−
10
−
1
2
3
−
1
−
10
−
10
−
10
I
(mA)
C
I
C
/I
B
= 10
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 5.
Collector-emitter saturation voltage as a function of collector current;
typical values
8. Test
information
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450
Ω
450
Ω
R2
V
I
DUT
R1
mgd624
V
I
= 5 V; t = 500
µ
s; t
p
= 10
µ
s; t
r
= t
f
≤
3 ns
R1 = 56
Ω
; R2 = 2.5 k
Ω
; R
B
= 3.9 k
Ω
; R
C
= 270
Ω
V
BB
= 1.9 V; V
CC
=
−
3 V
Oscilloscope: input impedance Z
I
= 50
Ω
Fig 6.
Test circuit for switching times
PMST3906_5
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
5 of 10
PMST3906
NXP Semiconductors
40
V
,
2
00 mA PNP switching transistor
9. Package
outline
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig 7.
Package outline SOT323 (SC-70)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package Description
Packing quantity
3000
-115
10000
PMST3906
SOT323 4
mm pitch, 8 mm tape and reel
-135
[1] For
further information and the availability of packing methods, see
Section 14
.
PMST3906_5
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
6 of 10
PMST3906
NXP Semiconductors
40
V
,
2
00 mA PNP switching transistor
11. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
3
0.6
(3
×
)
solder paste
occupied area
1.3
2.35
0.5
(3
×
)
1
Dimensions in mm
0.55
(3
×
)
sot323_fr
Fig 8.
Reflow soldering footprint SOT323 (SC-70)
4.6
2.575
1.425
(3
×
)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2
×
)
sot323_fw
Fig 9.
Wave soldering footprint SOT323 (SC-70)
PMST3906_5
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
7 of 10
PMST3906
NXP Semiconductors
40
V
,
2
00 mA PNP switching transistor
12. Revision history
Table 9.
Revision history
Document ID
PMST3906_5
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090429
Product data sheet
–
PMST3906_4
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
•
Figure 2
: updated
•
Figure 5
: figure notes order amended
•
Section 10 “Packing information”
added
•
Section 11 “Soldering”
: added
•
Section 13 “Legal information”
: updated
PMST3906_4
20040121
19990422
19970527
Product specification
Product specification
Product specification
–
–
–
PMST3906_3
PMST3906_3
PMST3906_CNV_2
–
PMST3906_CNV_2
PMST3906_5
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
8 of 10
PMST3906
NXP Semiconductors
40
V
,
2
00 mA PNP switching transistor
13. Legal information
13.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft —
The document is a draft version onl
y
.
T
he content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes onl
y
.
N
XP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliabilit
y
.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
intellectual property rights infringement and limitation of liabilit
y
,
u
nless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, militar
y
,
a
ircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injur
y
,
d
eath or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
PMST3906_5
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
9 of 10
PMST3906
NXP Semiconductors
40
V
,
2
00 mA PNP switching transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data. . . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
1
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics. . . . . . . . . . . . . . . . . . .
2
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
6
Packing information. . . . . . . . . . . . . . . . . . . . . .
6
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
8
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
9
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
T
r
ademark
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
13.1
13.2
13.3
13.4
14
15
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . . .
9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.
V
.
2
009.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 April 2009
Document identifier: PMST3906_5
