Nexperia-PMV100XPEAR
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PMV100XPEA
20 V, P-channel Trench MOSFET
15 June 2017
Product data sheet
1. General
description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features
and benefits
•
Low threshold voltage
•
•
•
•
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick
reference data
Table 1. Quick reference data
Symbol
V
DS
Parameter
Conditions
Min
Typ
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
–
–
–
V
GS
-12
–
V
I
D
V
GS
= -4.5 V; T
amb
= 25 °C
-2.4
A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -2.4 A; T
j
= 25 °C
–
97
128
mΩ
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
5. Pinning
information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
3
D
G
S
D
gate
2
source
drain
3
G
1
2
TO-236AB (SOT23)
S
017aaa259
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMV100XPEA
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4. Marking codes
Type number
PMV100XPEA
DP%
[1] %
= placeholder for manufacturing site code
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
2 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
V
GS
-12
V
I
D
V
GS
= -4.5 V; T
amb
= 25 °C
–
–
–
–
-2.4
-1.5
-10
5
A
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤ 10
µs
A
I
DM
peak drain current
A
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
T
j(init)
= 25 °C; I
D
= -0.5 A; DUT in
avalanche (unclamped)
mJ
P
tot
total power dissipation
T
amb
= 25 °C
T
sp
= 25 °C
–
463
1.06
4.45
150
150
150
mW
W
–
–
W
T
j
junction temperature
ambient temperature
storage temperature
-55
-55
-65
°C
°C
°C
T
amb
T
stg
Source-drain diode
I
S
source current
T
amb
= 25 °C
HBM
–
–
-1
A
V
ESD maximum rating
V
ESD
electrostatic discharge
voltage
2000
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured
between all pins.
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
3 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
– 75
0
– 75
– 25
25
75
125
175
– 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
aaa-023386
2
-10
I
D
(A)
Limit R
= V
/I
DS
DSon
D
-10
t
t
= 10 µs
p
p
= 100 µs
-1
-1
t
= 1 ms
p
t
t
= 10 ms
p
p
2
DC; T
= 25 °C; drain mounting pad 6 cm
amb
= 100 ms
-10
DC; T
= 25 °C
sp
-2
-10
-1
2
-10
-1
-10
-10
V
(V)
DS
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
4 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
226
98
Max
270
118
Unit
K/W
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
–
–
R
th(j-sp)
thermal resistance
from junction to solder
point
–
20
28
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
aaa-023387
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
2
10
0.33
0.25
0.20
0.10
0.05
0.02
10
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023388
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.50
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
5 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C
-20
–
–
V
V
V
GSth
gate-source threshold
I
D
= -250 µA; V
DS
=V
GS
; T
j
= 25 °C
voltage
-0.75 -1
-1.25
I
DSS
I
GSS
drain leakage current
gate leakage current
V
DS
= -20 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 12 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -12 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -2.4 A; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -2.4 A; T
j
= 150 °C
V
GS
= -2.5 V; I
D
= -1.9 A; T
j
= 25 °C
V
DS
= -10 V; I
D
= -2.4 A; T
j
= 25 °C
–
–
–
–
–
–
–
–
–
–
-1
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
S
–
10
-10
2
–
–
–
-2
R
DSon
drain-source on-state
resistance
97
142
147
6
128
187
210
–
g
fs
forward
transconductance
R
G
gate resistance
f = 1 MHz
–
17.4
–
Ω
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
V
DS
= -10 V; I
D
= -2.4 A; V
GS
= -4.5 V;
T
j
= 25 °C
–
–
–
–
–
–
3.4
6
–
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
0.85
0.75
386
54
–
V
DS
= -10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
–
C
oss
C
rss
–
reverse transfer
capacitance
40
–
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= -10 V; I
D
= -2.4 A; V
GS
= -4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
–
–
–
–
5
–
–
–
–
ns
ns
ns
ns
4
turn-off delay time
fall time
35
17
Source-drain diode
V
SD
source-drain voltage
I
S
= -1 A; V
GS
= 0 V; T
j
= 25 °C
–
-0.7
-1.2
V
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
6 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
aaa-023389
aaa-023390
-3
-4
-5
-6
-10
-10
I
D
(A)
-4.5 V
-4.0 V
-3.0 V
I
D
(A)
-2.8 V
-8
-6
-4
-2
0
min
typ
max
-10
-2.5 V
-2.2 V
-10
-10
V
= -1.8 V
GS
0
-1
-2
-3
-4
-5
0
-0.5
-1.0
-1.5
V
(V)
V
(V)
GS
DS
T
j
= 25 °C
Fig. 6.
Output characteristics: drain current as a
V
DS
= -5 V
T
j
= 25 °C
function of drain-source voltage; typical values
Fig. 7.
Sub-threshold drain current as a function of
gate-source voltage
aaa-023391
aaa-023392
400
400
-2.5 V
-1.8 V
-2.2 V
R
DSon
R
DSon
(mΩ)
(mΩ)
-2.8 V
300
300
-3.0 V
200
100
0
200
100
0
T =
150 °C
j
V
= -4.5 V
GS
T =
25 °C
j
0
-2
-4
-6
-8
-10
0
-4
-8
-12
I
(A)
V
(V)
GS
D
T
j
= 25 °C
I
D
= -2.2 A
Fig. 8.
Drain-source on-state resistance as a function
Fig. 9.
Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
7 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
aaa-023393
aaa-023394
-10
2.0
1.5
1.0
0.5
0
I
D
(A)
a
-8
-6
-4
-2
0
T =
150 °C
j
T =
25 °C
j
0
-1
-2
-3
-4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
V
DS
> I
D
x R
DSon
Fig. 10.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11.
Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-023395
aaa-023396
3
-2.0
10
V
GS(th)
(V)
C
(pF)
C
iss
-1.5
-1.0
-0.5
0
2
max
typ
10
C
oss
C
rss
min
10
1
-10
-1
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
I
D
= – 250 μA; V
DS
= V
GS
f = 1 MHz; V
GS
= 0 V
Fig. 12.
Gate-source threshold voltage as a function of
Fig. 13.
Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
8 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
aaa-023397
-5
V
DS
V
GS
(V)
I
D
-4
-3
-2
-1
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GD
G(tot)
GS
Q
003aaa508
Fig. 15.
Gate charge waveform definitions
0
1
2
3
4
Q
G
(nC)
V
DS
= -10 V; I
D
= -2.38 A
Fig. 14.
Gate-source voltage as a function of gate
charge; typical values
aaa-023959
-3.5
I
S
(A)
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
T
j =
150 °C
T
j =
25 °C
0
-0.4
-0.8
-1.2
V
(V)
SD
V
GS
= 0 V
Fig. 16.
Source current as a function of source-drain voltage; typical values
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
9 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
11. Test
information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17.
Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 – Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
10 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
12. Package
outline
Plastic surface-mounted package; 3 leads
SOT23
B
D
A
E
X
H
E
v
A
3
Q
A
A
1
c
1
2
e
1
b
w
B
L
p
p
e
detail X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
c
D
E
e
e
1
H
E
L
p
Q
v
w
1
p
max 1.1
0.1 0.48
0.15 3.0
1.4
nom
2.5 0.45
0.55
2.1 0.15
0.45
mm
1.9 0.95
0.2 0.1
0.9
0.38 0.09
2.8 1.2
min
sot023_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-06-19
14-09-22
SOT23
TO-236AB
Fig. 18.
Package outline TO-236AB (SOT23)
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
11 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 19.
Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 20.
Wave soldering footprint for TO-236AB (SOT23)
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
12 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
14. Revision
history
Table 8. Revision history
Data sheet ID
PMV100XPEA v.2
Modification:
Release date
20170615
Data sheet status
Change notice
Supersedes
Product data sheet
–
PMV100XPEA v.1
•
Figure 1 removed
PMV100XPEA v.1
20160630
–
–
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2017
13 / 15
Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale
of Nexperia.
15. Legal
information
Right to make changes
— Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Suitability for use in automotive applications
— This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Document
Product
Definition
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Definitions
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Terms and conditions of commercial sale
— Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Disclaimers
No offer to sell or license
— Nothing in this document may be interpreted
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PMV100XPEA
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Nexperia
PMV100XPEA
20 V, P-channel Trench MOSFET
16. Contents
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Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 15 June 2017
©
PMV100XPEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
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