Nexperia-PMZ290UN315
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3
8
8
T
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
O
S
6 November 2013
Product data sheet
1. General
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless and ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features
and benefits
Fast switching
Trench MOSFET technology
Low threshold voltage
•
•
•
•
Ultra thin package profile with 0.48 mm height
3. Applications
Relay driver
•
•
•
•
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick
reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
20
8
Unit
V
V
DS
V
GS
I
D
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
–
–
–
-8
–
V
V
GS
= 4.5 V; T
amb
= 25 °C
1
A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 200 mA; T
j
= 25 °C
–
290
350
mΩ
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
5. Pinning
information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
1
2
3
G
S
D
gate
1
2
3
source
drain
G
Transparent
top view
S
DFN1006-3 (SOT883)
017aaa253
6. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMZ290UN
DFN1006-3
DFN1006-3: leadless ultra small plastic package; 3 solder lands
SOT883
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMZ290UN
ZG
PMZ290UN
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Product data sheet
6 November 2013
2 / 15
NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
8. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
V
GS
-8
V
I
D
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
–
1
A
–
0.6
4
A
I
DM
P
tot
peak drain current
–
A
total power dissipation
–
360
715
mW
mW
–
T
sp
= 25 °C
–
2700 mW
T
j
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
T
amb
T
stg
Source-drain diode
I
S
source current
T
amb
= 25 °C
–
0.67
A
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
001aao121
001aao122
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
-25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
PMZ290UN
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Product data sheet
6 November 2013
3 / 15
NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
aaa-001944
10
I
D
limit R
= V
/ I
DS
(A)
DSon
D
1
(1)
(2)
(3)
-1
10
10
(4)
(5)
-2
-1
2
10
1
10
10
V
(V)
DS
I
DM
is single pulse
(1) t
p
= 1 ms
(2) DC; T
sp
= 25 °C
(3) t
p
= 10 ms
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
PMZ290UN
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Product data sheet
6 November 2013
4 / 15
NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
9. Thermal
characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
305
150
Max
360
175
Unit
K/W
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
–
–
R
th(j-sp)
thermal resistance
from junction to solder
point
–
–
40
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
017aaa109
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.05
0.1
0
0.02
0.01
10
10
– 3
– 2
– 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
10
10
– 3
– 2
– 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm
2
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ290UN
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Product data sheet
6 November 2013
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NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 10 µA; V
GS
= 0 V; T
j
= 25 °C
20
–
–
V
V
V
GSth
gate-source threshold
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
voltage
0.45
0.7
0.95
I
DSS
drain leakage current
V
DS
= 20 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 20 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 200 mA; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 200 mA; T
j
= 150 °C
V
GS
= 2.5 V; I
D
= 100 mA; T
j
= 25 °C
V
GS
= 1.8 V; I
D
= 75 mA; T
j
= 25 °C
V
DS
= 5 V; I
D
= 200 mA; T
j
= 25 °C
–
–
–
–
–
–
–
–
–
–
1
µA
µA
µA
µA
mΩ
mΩ
mΩ
mΩ
S
–
100
0.1
0.1
350
560
450
650
–
I
GSS
gate leakage current
–
–
R
DSon
drain-source on-state
resistance
290
460
360
460
2
g
fs
forward
transconductance
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
V
DS
= 10 V; I
D
= 1 A; V
GS
= 4.5 V;
T
j
= 25 °C
–
–
–
–
–
–
0.89
0.13
0.18
45
1.2
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
–
–
V
DS
= 20 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
68
–
C
oss
C
rss
11
reverse transfer
capacitance
7
–
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 10 V; R
L
= 10 Ω; V
GS
= 4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
–
–
–
–
4.5
10
9
–
ns
ns
ns
ns
turn-off delay time
fall time
18.5
5
37
–
Source-drain diode
V
SD
source-drain voltage
I
S
= 300 mA; V
GS
= 0 V; T
j
= 25 °C
–
0.75
1.2
V
PMZ290UN
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Product data sheet
6 November 2013
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NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
aaa-001945
03am43
– 3
– 4
– 5
– 6
2.0
10
(1)
(2)
I
D
(A)
I
D
(3)
(4)
(A)
1.5
10
10
10
min
typ
max
1.0
0.5
0
(5)
0
1
2
3
4
0
0.4
0.8
1.2
V
(V)
V
(V)
DS
GS
T
j
= 25 °C
Fig. 7.
Sub-threshold drain current as a function of
gate-source voltage
(1) V
GS
= 4.5 V
(2) V
GS
= 2.5 V
(3) V
GS
= 2.0 V
(4) V
GS
= 1.8 V
(5) V
GS
= 1.5 V
Fig. 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-001946
aaa-001947
1.0
1.0
R
DSon
(Ω)
R
DSon
(Ω)
0.8
0.6
0.4
0.2
0
0.8
(1)
(2)
0.6
0.4
0.2
0
(1)
(2)
(3)
(4)
(5)
0
0.5
1.0
1.5
2.0
0
1
2
3
4
5
I
D
(A)
V
(V)
GS
T
j
= 25 °C
I
D
= 800 mA
(1) T
j
= 150 °C
(2) T
j
= 25 °C
(1) V
GS
= 1.8 V
(2) V
GS
= 2 V
(3) V
GS
= 2.5 V
(4) V
GS
= 3 V
(5) V
GS
= 4.5 V
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 8.
Drain-source on-state resistance as a function
of drain current; typical values
PMZ290UN
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Product data sheet
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NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
aaa-001948
003aac024
2.0
2.0
1.5
1.0
0.5
0
I
a
D
(A)
(1)
(2)
1.5
1.0
0.5
(2)
1
(1)
0
0
2
3
– 60
0
60
120
180
V
(V)
T (°C)
GS
j
V
DS
> I
D
x R
DSon
(1) T
j
= 25 °C
Fig. 11.
Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
(2) T
j
= 150 °C
Fig. 10.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03aj65
03an06
2
1.2
10
V
GS(th)
(V)
C
iss
C
(pF)
0.9
0.6
0.3
0
max
typ
C
C
oss
10
rss
min
1
– 1
2
– 60
0
60
120
180
10
1
10
10
T (°C)
j
V
(V)
DS
I
D
= 0.25 mA; V
DS
= V
GS
Fig. 13.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 12.
Gate-source threshold voltage as a function of
junction temperature
PMZ290UN
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Product data sheet
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NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
03an07
5
V
I
= 1 A
DS
D
V
GS
(V)
T =
25 °C
V
j
= 10 V
DS
I
D
4
3
2
1
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 15.
Gate charge waveform definitions
0
0.2
0.4
0.6
0.8
1
Q
G
(nC)
Fig. 14.
Gate-source voltage as a function of gate
charge; typical values
aaa-001949
1.0
I
S
(A)
0.8
(1)
(2)
0.6
0.4
0.2
0
0
0.4
0.8
1.2
V
(V)
SD
V
GS
= 0 V
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig. 16.
Source current as a function of source-drain voltage; typical values
PMZ290UN
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Product data sheet
6 November 2013
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NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
11. Test
information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17.
Duty cycle definition
PMZ290UN
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Product data sheet
6 November 2013
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NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
Fig. 18.
Package outline DFN1006-3 (SOT883)
PMZ290UN
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Product data sheet
6 November 2013
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NXP Semiconductors
PMZ290UN
20
V
,
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ingle N-channel Trench MOSFET
13. Soldering
1.3
0.7
R0.05 (12×)
solder lands
solder resist
0.9
0.7
0.6
solder paste
occupied area
0.25
(2×)
0.3
(2×)
0.3
0.4
Dimensions in mm
0.4
(2×)
sot883_fr
Fig. 19.
Reflow soldering footprint for DFN1006-3 (SOT883)
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMZ290UN v.1
20131106
Product data sheet
–
–
PMZ290UN
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Product data sheet
6 November 2013
12 / 15
NXP Semiconductors
PMZ290UN
20
V
,
s
ingle N-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation –
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data
sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Document
Product
Definition
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Right to make changes
— NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Suitability for use
— NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
15.2 Definitions
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
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associated with their applications and products.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale
— NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
15.3 Disclaimers
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante
,
Bitport
,
Bitsound
,
CoolFlux
,
CoReUse
,
DESFire
,
EZ-HV
,
FabKey
,
GreenChip
,
HiPerSmart
,
HITAG
,
I²C-bus
logo,
ICODE
,
I-CODE
,
ITEC
,
Labelution
,
MIFARE
,
MIFARE Plus
,
MIFARE Ultralight
,
MoReUse
,
QLPAK
,
Silicon Tuner
,
SiliconMAX
,
SmartXA
,
STARplug
,
TOPFET
,
TrenchMOS
,
TriMedia
and
UCODE
— are trademarks of NXP B.
V
.
HD Radio
and
HD Radio
logo — are trademarks of iBiquity Digital
Corporation.
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© NXP N.V. 2013. All rights reserved
Product data sheet
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NXP Semiconductors
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16. Contents
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
15.1
15.2
15.3
15.4
© NXP N.V. 2013. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 November 2013
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Product data sheet
6 November 2013
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