Nexperia-PMZB320UPE-315
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PMZB370UNE
30
V
,
s
ingle N-channel Trench MOSFET
Rev. 1 — 8 May 2012
Product data sheet
1. Product
profile
1.1 General
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features
and benefits
Very fast switching
Ultra thin package profile with
0.37 mm height
Trench MOSFET technology
Low threshold voltage
ESD protection up to 2 kV
1.3 Applications
Relay driver
Low-side loadswitch
Switching circuits
High-speed line driver
1.4 Quick
reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
–
–
–
V
GS
-8
–
8
V
I
D
V
GS
= 4.5 V; T
amb
= 25 °C
900
mA
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 500 mA; T
j
= 25 °C
–
370
490
m
Ω
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
2. Pinning
information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
D
1
2
2
source
drain
3
3
G
Transparent
top view
SOT883B (DFN1006B-3)
S
017aaa255
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT883B
PMZB370UNE
DFN1006B-3
Leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.37 mm
4. Marking
Table 4.
Marking codes
Type number
PMZB370UNE
Marking code
0000 1000
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
2 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
V
GS
-8
8
V
I
D
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
–
900
560
3.6
360
715
mA
mA
A
–
I
DM
P
tot
peak drain current
–
total power dissipation
–
mW
mW
–
T
sp
= 25 °C
–
2700 mW
T
j
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
T
amb
T
stg
Source-drain diode
I
S
source current
T
amb
= 25 °C
–
–
680
mA
V
ESD maximum rating
V
ESD
electrostatic discharge voltage
HBM
2000
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured
between all pins.
017aaa123
017aaa124
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−
75
0
−
75
−
25
25
75
125
175
−
25
25
75
125
175
T (
°
C)
j
T (
°
C)
j
Fig 2.
Normalized total power dissipation as a
function of junction temperature
Fig 3.
Normalized continuous drain current as a
function of junction temperature
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
3 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
017aaa566
10
Limit R
= V
/I
DS
DSon
D
I
D
(A)
1
t
p
= 1 μs
-1
10
DC; T
= 25 °C
sp
t
p
= 10 μs
DC; T
= 25 °C;
amb
t
p
= 100 μs
2
drain mounting pad 1 cm
-2
10
10
-1
2
1
10
10
V
DS
(V)
I
DM
= single pulse
Fig 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
4 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
6. Thermal
characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
305
150
Max
360
175
Unit
K/W
K/W
thermal resistance
from junction to
ambient
in free air
–
–
R
th(j-sp)
thermal resistance
from junction to solder
point
–
–
40
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
017aaa109
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.05
0.1
0
0.02
0.01
10
10
−
3
−
2
−
1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
10
10
−
3
−
2
−
1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm
2
Fig 6.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
5 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
30
–
–
V
V
V
GSth
gate-source threshold
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
voltage
0.5
0.77
1.05
I
DSS
drain leakage current
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 500 mA; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 500 mA; T
j
= 150 °C
V
GS
= 2.5 V; I
D
= 400 mA; T
j
= 25 °C
V
GS
= 1.8 V; I
D
= 100 mA; T
j
= 25 °C
V
DS
= 10 V; I
D
= 200 mA; T
j
= 25 °C
–
–
–
–
–
–
–
–
–
–
–
–
1
µA
µA
µA
µA
µA
µA
m
Ω
m
Ω
m
Ω
–
10
3
I
GSS
R
DSon
g
fs
gate leakage current
–
–
3
–
0.5
0.5
490
860
750
–
drain-source on-state
resistance
370
650
470
630
1580
1300 m
Ω
forward
–
mS
transconductance
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
V
DS
= 15 V; I
D
= 500 mA; V
GS
= 4.5 V;
T
j
= 25 °C
–
–
–
–
–
–
0.77
0.15
0.16
52
1.16
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
–
–
V
DS
= 25 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
78
–
C
oss
C
rss
9
reverse transfer
capacitance
3
–
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 15 V; R
L
= 250
Ω
; V
GS
= 4.5 V;
R
G(ext)
= 6
Ω
; T
j
= 25 °C
–
–
–
–
11
9
22
ns
ns
ns
ns
–
turn-off delay time
fall time
54
27
108
–
Source-drain diode
V
SD
source-drain voltage
I
S
= 300 mA; V
GS
= 0 V; T
j
= 25 °C
0.48
0.76
1.2
V
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
6 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
017aaa567
017aaa568
-3
-4
-5
-6
1.0
10
D
4.5 V
2.5 V
2 V
I
D
(A)
V
= 1.8 V
GS
I
(A)
0.8
10
0.6
0.4
0.2
0
min
typ
max
1.5 V
10
10
1 V
1.5
0
0.5
1.0
2.0
0
0.25
0.50
0.75
1.00
1.25
(V)
V
DS
(V)
V
GS
T
j
= 25 °C
T
j
= 25 °C; V
DS
= 5 V
Fig 7.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8.
Sub-threshold drain current as a function of
gate-source voltage
017aaa569
017aaa570
1.0
3
R
DSon
(Ω)
V
= 1.8 V
GS
R
DSon
(Ω)
0.8
0.6
0.4
0.2
0
2 V
2
2.5 V
3 V
1
0
4.5 V
T =
25 °C
j
T =
150 °C
j
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
I
(A)
V
(V)
GS
D
T
j
= 25 °C
I
D
= 500 mA
Fig 9.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 10.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
7 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
017aaa571
017aaa572
1.2
2.0
1.5
1.0
0.5
0
a
I
D
(A)
0.8
0.4
0
T =
150 °C
T =
25 °C
j
j
0
0.5
1.0
1.5
2.0
2.5
(V)
-60
0
60
120
180
V
T (°C)
j
GS
V
DS
> I
D
× R
DSon
Fig 11.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 12.
Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa573
017aaa574
3
1.5
10
C
(pF)
V
GS(th)
(V)
2
1.0
0.5
0
10
max
typ
C
iss
10
C
C
oss
min
rss
1
-1
2
-60
0
60
120
180
10
1
10
10
T (°C)
j
V
(V)
DS
I
D
= 0.25 mA; V
DS
= V
GS
f = 1 MHz; V
GS
= 0 V
Fig 13.
Gate-source threshold voltage as a function of
junction temperature
Fig 14.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
8 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
017aaa575
5
V
DS
V
GS
(V)
I
4
3
2
1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
0.2
0.4
0.6
0.8
1.0
(nC)
Q
G
I
D
= 0.5 A; V
DS
= 15 V; T
amb
= 25 °C
Fig 15.
Gate-source voltage as a function of gate
charge; typical values
Fig 16.
Gate charge waveform definitions
017aaa576
1.0
I
S
(A)
0.8
0.6
0.4
0.2
0
T =
150 °C
j
T =
25 °C
j
0
0.2
0.4
0.6
0.8
1.0
(V)
V
SD
V
GS
= 0 V
Fig 17.
Source current as a function of source-drain voltage; typical values
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
9 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
8. Test
information
t
t
1
2
P
duty cycle
δ
=
t
2
t
1
t
006aaa812
Fig 18.
Duty cycle definition
9. Package
outline
0.65
0.55
0.40
0.34
0.35
0.20
0.12
0.04 max
1
2
0.30
0.22
1.05
0.95
0.65
0.30
0.22
3
0.55
0.47
Dimensions in mm
11-11-02
Fig 19.
Package outline SOT883B (DFN1006B-3)
PMZB370UNE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
10 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6 0.7
0.25
(2x)
0.3
0.3
0.4
(2x)
0.4
(2x)
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot883b_fr
Fig 20.
Reflow soldering footprint for SOT883B (DFN1006B-3)
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
11 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
11. Revision
history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMZB370UNE v.1
20120508
Product data sheet
–
–
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
12 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
12. Legal information
12.1 Data
sheet status
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Right to make changes
— Nexperia reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use
— Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
12.3 Disclaimers
Limited warranty and liability
— Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the
customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever,
Nexperia’s
aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
PMZB370UNE
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
13 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
Terms and conditions of commercial sale
— Nexperia
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications
such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications
beyond Nexperia’s
standard warranty
and Nexperia’s product specifications
.
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the
product without Nexperia’s warranty
of the
13. Contact information
PMZB370UNE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 8 May 2012
14 of 15
PMZB370UNE
Nexperia
30 V, single N-channel Trench MOSFET
14. Contents
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
08 May 2012
Mouser Electronics
Authorized Distributor
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