Nexperia-PMZB320UPE-315

Part #Nexperia-PMZB320UPE-315
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Nexperia-PMZB320UPE-315
PMZB370UNE  
30
V
,
s
ingle N-channel Trench MOSFET  
Rev. 1 — 8 May 2012  
Product data sheet  
1. Product
 
profile  
1.1 General
 
description  
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small  
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench  
MOSFET technology.  
1.2 Features
 
and benefits  
Very fast switching  
Ultra thin package profile with  
0.37 mm height  
Trench MOSFET technology  
Low threshold voltage  
ESD protection up to 2 kV  
1.3 Applications  
Relay driver  
Low-side loadswitch  
Switching circuits  
High-speed line driver  
1.4 Quick
 
reference data  
Table 1.  
Symbol  
V

DS  

Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
T

j

= 25 °C  
–
–
–
–
V

GS  

-8  
–
8
V
I

D  

V

GS

= 4.5 V; T

amb

= 25 °C  
900  
mA  
Static characteristics  
R

DSon

drain-source on-state  
resistance  
V

GS

= 4.5 V; I

D

= 500 mA; T

j

= 25 °C  
–
370  
490  
m
Ω
 
[1] Device
 
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm

2

.  
 
 
 
 
 
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
2. Pinning
 
information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
G
S
D
gate  
D
1
2
2
source  
drain  
3
3
G
Transparent  
top view  
SOT883B (DFN1006B-3)  
S
017aaa255  
3. Ordering
 
information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
SOT883B  
PMZB370UNE  
DFN1006B-3  
Leadless ultra small plastic package; 3 solder lands;  
body 1.0 x 0.6 x 0.37 mm  
4. Marking  
Table 4.  
Marking codes  
Type number  
PMZB370UNE  
Marking code  
0000 1000  
PIN 1 INDICATION  
READING DIRECTION  
READING EXAMPLE:  
0111  
1011  
MARKING CODE  
(EXAMPLE)  
READING DIRECTION  
006aac673  
Fig 1.
 
DFN1006B-3 (SOT883B) binary marking code description  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
2 of 15  
 
 
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
5. Limiting
 
values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
V

DS  

Parameter  
Conditions  
Min  
Max  
30  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
T

j

= 25 °C  
–
V

GS  

-8  
8
V
I

D  

V

GS

= 4.5 V; T

amb

= 25 °C  
V

GS

= 4.5 V; T

amb

= 100 °C  
T

amb

= 25 °C; single pulse; t

p

≤
10 µs  
T

amb

= 25 °C  
–
900  
560  
3.6  
360  
715  
mA  
mA  
A
–
I

DM  

P

tot  

peak drain current  
–
total power dissipation  
–
mW  
mW  
–
T

sp

= 25 °C  
–
2700 mW  
T

j  

junction temperature  
ambient temperature  
storage temperature  
-55  
-55  
-65  
150  
150  
150  
°C  
°C  
°C  
T

amb  

T

stg  

Source-drain diode  
I

S  

source current  
T

amb

= 25 °C  
–
–
680  
mA  
V
ESD maximum rating  
V

ESD  

electrostatic discharge voltage
 
HBM  
2000  
[1] Device
 
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm

2

.  
[2] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[3] Measured
 
between all pins.  
017aaa123  
017aaa124  
120  
120  
P
der  
I
der  
(%)  
(%)  
80  
80  
40  
40  
0
−
75  
0
−
75  
−
25  
25  
75  
125  
175  
−
25  
25  
75  
125  
175  
T (
°
C)  
j
T (
°
C)  
j
Fig 2.
 
Normalized total power dissipation as a  
function of junction temperature  
Fig 3.
 
Normalized continuous drain current as a  
function of junction temperature  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
3 of 15  
 
 
 
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
017aaa566  
10  
Limit R  
= V
 
/I  
DS  
DSon  
D
I
D
(A)  
1
t
p
= 1 μs  
-1  
10  
DC; T
 
= 25 °C  
sp  
t
p
= 10 μs  
DC; T  
= 25 °C;  
amb  
t
p
= 100 μs  
2
drain mounting pad 1 cm  
-2  
10  
10  
-1  
2
1
10  
10  
V
DS  
(V)  
I

DM

= single pulse  
Fig 4.
 
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source  
voltage  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
4 of 15  

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
6. Thermal
 
characteristics  
Table 6.  
Symbol  
R

th(j-a)  

Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
305  
150  
Max  
360  
175  
Unit  
K/W  
K/W  
thermal resistance  
from junction to  
ambient  
in free air  
–
–
R

th(j-sp)  

thermal resistance  
from junction to solder  
point  
–
–
40  
K/W  
[1] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

2

.  
017aaa109  
3
10  
duty cycle = 1  
0.75  
Z
th(j-a)  
(K/W)  
0.5  
0.33  
0.2  
2
10  
0.25  
0.05  
0.1  
0
0.02  
0.01  
10  
10  
−
3  
−
2  
−
1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 5.
 
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
017aaa110  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
2
10  
0.5  
0.33  
0.2  
0.25  
0.1  
0.05  
0.02  
0.01  
0
10  
10  
−
3  
−
2  
−
1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for drain 1 cm

2  

Fig 6.
 
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
5 of 15  
 
 
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
7. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V

(BR)DSS

drain-source  
breakdown voltage  
I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C  
30  
–
–
V
V
V

GSth  

gate-source threshold
 
I

D

= 250 µA; V

DS

= V

GS

; T

j

= 25 °C  
voltage  
0.5  
0.77  
1.05  
I

DSS  

drain leakage current  
V

DS

= 30 V; V

GS

= 0 V; T

j

= 25 °C  
V

DS

= 30 V; V

GS

= 0 V; T

j

= 150 °C  
V

GS

= 8 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= -8 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= -4.5 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= 4.5 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= 4.5 V; I

D

= 500 mA; T

j

= 25 °C  
V

GS

= 4.5 V; I

D

= 500 mA; T

j

= 150 °C  
V

GS

= 2.5 V; I

D

= 400 mA; T

j

= 25 °C  
V

GS

= 1.8 V; I

D

= 100 mA; T

j

= 25 °C  
V

DS

= 10 V; I

D

= 200 mA; T

j

= 25 °C  
–
–
–
–
–
–
–
–
–
–
–
–
1
µA  
µA  
µA  
µA  
µA  
µA  
m
Ω  
m
Ω  
m
Ω  
–
10  
3
I

GSS  

R

DSon  

g

fs  

gate leakage current  
–
–
3
–
0.5  
0.5  
490  
860  
750  
–
drain-source on-state  
resistance  
370  
650  
470  
630  
1580  
1300 m
Ω  
forward  
–
mS  
transconductance  
Dynamic characteristics  
Q

G(tot)  

Q

GS  

Q

GD  

C

iss  

total gate charge  
V

DS

= 15 V; I

D

= 500 mA; V

GS

= 4.5 V;  
T

j

= 25 °C  
–
–
–
–
–
–
0.77  
0.15  
0.16  
52  
1.16  
nC  
nC  
nC  
pF  
pF  
pF  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
–
–
V

DS

= 25 V; f = 1 MHz; V

GS

= 0 V;  
T

j

= 25 °C  
78  
–
C

oss  

C

rss  

9
reverse transfer  
capacitance  
3
–
t

d(on)  

t

r  

t

d(off)  

t

f  

turn-on delay time  
rise time  
V

DS

= 15 V; R

L

= 250
Ω
; V

GS

= 4.5 V;  
R

G(ext)

= 6
Ω
; T

j

= 25 °C  
–
–
–
–
11  
9
22  
ns  
ns  
ns  
ns  
–
turn-off delay time  
fall time  
54  
27  
108  
–
Source-drain diode  
V

SD  

source-drain voltage  
I

S

= 300 mA; V

GS

= 0 V; T

j

= 25 °C  
0.48  
0.76  
1.2  
V
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
6 of 15  
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
017aaa567  
017aaa568  
-3  
-4  
-5  
-6  
1.0  
10  
D
4.5 V  
2.5 V  
2 V  
I
D
(A)  
V
= 1.8 V  
GS  
I
(A)  
0.8  
10  
0.6  
0.4  
0.2  
0
min  
typ  
max  
1.5 V  
10  
10  
1 V  
1.5  
0
0.5  
1.0  
2.0  
0
0.25  
0.50  
0.75  
1.00  
1.25  
(V)  
V
DS  
(V)  
V
GS  
T

j

= 25 °C  
T

j

= 25 °C; V

DS

= 5 V  
Fig 7.
 
Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 8.
 
Sub-threshold drain current as a function of  
gate-source voltage  
017aaa569  
017aaa570  
1.0  
3
R
DSon  
(Ω)  
V
= 1.8 V  
GS  
R
DSon  
(Ω)  
0.8  
0.6  
0.4  
0.2  
0
2 V  
2
2.5 V  
3 V  
1
0
4.5 V  
T =
 
25 °C  
j
T =
 
150 °C  
j
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
1
2
3
4
5
I
(A)  
V
(V)  
GS  
D
T

j

= 25 °C  
I

D

= 500 mA  
Fig 9.
 
Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 10.
 
Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
7 of 15  

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
017aaa571  
017aaa572  
1.2  
2.0  
1.5  
1.0  
0.5  
0
a
I
D
(A)  
0.8  
0.4  
0
T =
 
150 °C  
T =
 
25 °C  
j
j
0
0.5  
1.0  
1.5  
2.0  
2.5  
(V)  
-60  
0
60  
120  
180  
V
T (°C)  
j
GS  
V

DS

> I

D

× R

DSon  

Fig 11.
 
Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 12.
 
Normalized drain-source on-state resistance as  
a function of junction temperature; typical  
values  
017aaa573  
017aaa574  
3
1.5  
10  
C
(pF)  
V
GS(th)  
(V)  
2
1.0  
0.5  
0
10  
max  
typ  
C
iss  
10  
C
C
oss  
min  
rss  
1
-1  
2
-60  
0
60  
120  
180  
10  
1
10  
10  
T (°C)  
j
V
(V)  
DS  
I

D

= 0.25 mA; V

DS

= V

GS  

f = 1 MHz; V

GS

= 0 V  
Fig 13.
 
Gate-source threshold voltage as a function of  
junction temperature  
Fig 14.
 
Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
8 of 15  

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
017aaa575  
5
V
DS  
V
GS  
(V)  
I
4
3
2
1
0
D
V
GS(pl)  
V
GS(th)  
GS  
V
Q
Q
GS1  
GS2  
Q
Q
GD  
GS  
Q
G(tot)  
017aaa137  
0
0.2  
0.4  
0.6  
0.8  
1.0  
(nC)  
Q
G
I

D

= 0.5 A; V

DS

= 15 V; T

amb

= 25 °C  
Fig 15.
 
Gate-source voltage as a function of gate  
charge; typical values  
Fig 16.
 
Gate charge waveform definitions  
017aaa576  
1.0  
I
S
(A)  
0.8  
0.6  
0.4  
0.2  
0
T =
 
150 °C  
j
T =
 
25 °C  
j
0
0.2  
0.4  
0.6  
0.8  
1.0  
(V)  
V
SD  
V

GS

= 0 V  
Fig 17.
 
Source current as a function of source-drain voltage; typical values  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
9 of 15  

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
8. Test
 
information  
t
t
1
2
P
duty cycle
δ
=  
t
2
t
1
t
006aaa812  
Fig 18.
 
Duty cycle definition  
9. Package
 
outline  
0.65  
0.55  
0.40  
0.34  
0.35  
0.20  
0.12  
0.04 max  
1
2
0.30  
0.22  
1.05  
0.95  
0.65  
0.30  
0.22  
3
0.55  
0.47  
Dimensions in mm  
11-11-02  
Fig 19.
 
Package outline SOT883B (DFN1006B-3)  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
10 of 15  
 
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
10. Soldering  
Footprint information for reflow soldering  
SOT883B  
1.3  
0.7  
R0.05 (8x)  
0.9  
0.6 0.7  
0.25  
(2x)  
0.3  
0.3  
0.4  
(2x)  
0.4  
(2x)  
solder land  
solder land plus solder paste  
solder paste deposit  
occupied area  
solder resist  
Dimensions in mm  
sot883b_fr  
Fig 20.
 
Reflow soldering footprint for SOT883B (DFN1006B-3)  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
11 of 15  
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
11. Revision
 
history  
Table 8.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PMZB370UNE v.1  
20120508  
Product data sheet  
–
–
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
12 of 15  
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
12. Legal information  
12.1 Data
 
sheet status  
Document status

Product status

Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet
 
Qualification  
Product [short] data sheet
 
Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
Right to make changes
— Nexperia reserves the right to make  
12.2 Definitions  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preview
— The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
Nexperia does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
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— Nexperia products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of a Nexperia product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Nexperia and its suppliers accept no liability for  
inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft
— The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet
— A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Quick reference data
— The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Applications
— Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
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— The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the Nexperia  
product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
12.3 Disclaimers  
Limited warranty and liability
— Information in this document is believed to  
be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no  
responsibility for the content in this document if provided by an information  
source outside of Nexperia.  
Nexperia does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the
customer’s applications and products using Nexperia  
products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). Nexperia does not accept any liability in this respect.  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including – without limitation – lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Limiting values
— Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever,
Nexperia’s
aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the
Terms and conditions of commercial sale
of Nexperia.  
PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
13 of 15  
 
 
 
 
 
 
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
Terms and conditions of commercial sale
— Nexperia  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications
such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies Nexperia for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications
beyond Nexperia’s  
standard warranty
and Nexperia’s product specifications
.  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http

, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
Translations
— A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
No offer to sell or license
— Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Export control
— This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Non-automotive qualified products
— Unless this data sheet expressly  
states that this specific Nexperia product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. Nexperia  
accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the
product without Nexperia’s warranty
of the  
13. Contact information  
For more information, please visit:

For sales office addresses, please send an email to:

PMZB370UNE  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 8 May 2012  
14 of 15  
 
 

PMZB370UNE  
Nexperia  
30 V, single N-channel Trench MOSFET  
14. Contents  

©

Nexperia B.V. 2017. All rights reserved  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release:
08 May 2012  

Mouser Electronics  
Authorized Distributor  
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