Nexperia-PSMN1R3-30YL-115
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PSMN1R3-30YL
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
Rev. 02 — 25 June 2009
Product data sheet
1. Product
profile
1.1 General
description
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features
and benefits
Advanced TrenchMOS provides low
Improved mechanical and thermal
RDSon and low gate charge
characteristics
High efficiency gains in switching
LFPAK provides maximum power
power convertors
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick
reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage
T
j
≥
25 °C; T
j
≤
150 °C
Min
Typ
Max Unit
V
DS
I
D
–
–
–
–
30
V
A
drain current
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
;
[1]
100
P
tot
total power
dissipation
T
mb
= 25 °C; see
Figure 2
–
–
–
121
150
W
T
j
junction temperature
-55
°C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 100 A; V
sup
≤
30 V;
R
GS
= 50
Ω
; unclamped
–
–
383
mJ
avalanche energy
Dynamic characteristics
Q
GD
gate-drain charge
total gate charge
V
GS
= 4.5 V; I
D
= 25 A;
V
DS
= 12 V; see
Figure 13
;
see
Figure 14
–
–
9.3
–
–
nC
nC
Q
G(tot)
46.6
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
Table 1.
Quick reference
…continued
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max Unit
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 15 A;
T
j
= 100 °C; see
Figure 12
–
–
–
1.8
m
Ω
m
Ω
V
GS
= 10 V; I
D
= 15 A;
1.04 1.3
T
j
= 25 °C; see
Figure 17
[1] Continuous
current is limited by package.
2. Pinning
information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
D
2
3
G
4
mbb076
S
mb
mounting base; connected to
drain
1
2
3
4
SOT1023
(LFPAK2)
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN1R3-30YL
LFPAK2
Plastic single-ende surface-mounted package (LFPAK2); 4 leads
SOT1023
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
2 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
j
≥
25 °C; T
j
≤
150 °C
T
j
≥
25 °C; T
j
≤
150 °C; R
GS
= 20 k
Ω
–
V
DGR
V
GS
–
30
V
-20
20
V
I
D
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
t
p
≤
10 µs; pulsed; T
mb
= 25 °C; see
Figure 3
[1]
[1]
–
100
100
923
121
150
150
260
A
–
A
I
DM
peak drain current
–
A
P
tot
T
stg
T
j
total power dissipation
T
mb
= 25 °C; see
Figure 2
storage temperature
–
W
°C
°C
°C
-55
-55
–
junction temperature
T
sld(M)
peak soldering
temperature
Source-drain diode
I
S
source current
peak source current
T
mb
= 25 °C;
[1]
–
–
100
923
A
A
I
SM
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A; V
sup
≤
30 V;
–
383
mJ
drain-source avalanche
R
GS
= 50
Ω
; unclamped
energy
[1] Continuous
current is limited by package.
003aad141
03aa15
120
250
I
D
(A)
200
P
der
(%)
80
150
100
50
40
0
0
0
50
100
150
200
mb
(
°
C)
0
50
100
150
200
T
T
mb
(
°
C)
Fig 1.
Normalized continuous drain currnet as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
3 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
003aad145
10
4
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
t
p
= 10 us
100 us
10
2
10
1
DC
1 ms
10 ms
100 ms
10
-1
10
-1
1
10
10
2
V
DS
(V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
4 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
5. Thermal
characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
see
Figure 4
–
0.4
1.03
K/W
003aad142
1
Z
th (j-mb)
(K/W)
= 0.5
δ
10
-1
10
-2
10
-3
10
-4
0.2
0.1
0.05
0.02
t
p
δ
=
P
T
single shot
t
t
p
T
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
t
p
(s)
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
5 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
30
27
1.3
–
–
V
V
V
–
–
V
GS(th)
gate-source threshold
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
1.7
2.15
voltage
see
Figure 10
; see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 150 °C;
see
Figure 10
0.65
–
–
–
–
V
V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
2.45
I
DSS
drain leakage current
gate leakage current
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 15 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -15 V; V
DS
= 0 V; T
j
= 25 °C
–
–
–
–
–
–
1
µA
µA
nA
nA
m
Ω
–
100
100
100
1.95
I
GSS
–
–
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 17
1.43
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
see
Figure 12
–
–
–
–
–
1.8
2.8
1.3
–
m
Ω
m
Ω
m
Ω
Ω
V
GS
= 10 V; I
D
= 15 A; T
j
= 150 °C;
1.9
1.04
0.89
see
Figure 12
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 17
R
G
gate resistance
f = 1 MHz
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 12 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
–
100
–
nC
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V
–
–
90
–
–
nC
nC
I
D
= 25 A; V
DS
= 12 V; V
GS
= 4.5 V;
see
Figure 13
; see
Figure 14
46.6
Q
GS
gate-source charge
I
D
= 25 A; V
DS
= 12 V; V
GS
= 4.5 V;
see
Figure 13
; see
Figure 14
–
–
–
–
–
17.9
11
–
–
–
–
–
nC
nC
nC
nC
V
Q
GS(th)
Q
GS(th-pl)
Q
GD
pre-threshold
gate-source charge
I
D
= 25 A; V
DS
= 12 V; V
GS
= 4.5 V;
see
Figure 13
post-threshold
gate-source charge
6.9
gate-drain charge
I
D
= 25 A; V
DS
= 12 V; V
GS
= 4.5 V;
see
Figure 13
; see
Figure 14
9.3
V
GS(pl)
gate-source plateau
voltage
V
DS
= 12 V; see
Figure 13
; see
Figure 14
2.53
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
DS
= 12 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
–
–
–
6227
1415
619
–
–
–
pF
pF
pF
reverse transfer
capacitance
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
6 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
Table 6.
Symbol
t
d(on)
t
r
Characteristics
…continued
Parameter
Conditions
Min
Typ
64
Max
Unit
ns
turn-on delay time
rise time
V
DS
= 12 V; R
L
= 0.5
Ω
; V
GS
= 4.5 V;
R
G(ext)
= 5.6
Ω
–
–
–
–
–
–
–
–
108
106
52
ns
t
d(off)
t
f
turn-off delay time
fall time
ns
ns
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
–
0.88
1.2
V
t
rr
reverse recovery time
recovered charge
I
S
= 20 A; dI
S
/dt = -100 A/s; V
GS
= 0 V;
V
DS
= 20 V
–
–
46
53
–
–
ns
Q
r
nC
003aad147
003aad152
8
6
4
2
0
10
4
R
DS
(on)
C
iss
(m
Ω
)
C
(pF)
C
rss
10
3
0
5
10
15
20
10
-1
1
10
V
GS
(V)
V
GS
(V)
Fig 5.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig 6.
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
7 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
003aad153
003aad144
200
100
3
V
GS
(V) =
2.8
I
D
g
fs
(A)
(S)
80
60
40
20
0
3.5
10
150
100
50
2.6
2.4
2.2
0
0
25
50
75
100
0
1
2
3
V
DS
(V)
I
D
(A)
Fig 8.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Forward transconductance as a function of
drain current; typical values
003aad148
003aab272
3
100
I
D
(A)
V
GS(th)
(V)
75
50
max
2
typ
1.5
min
1
25
0
T =
150
j
C
°
25
C
°
0.5
0
-60
0
1
2
3
0
60
120
180
V
GS
(V)
T (
°
C)
j
Fig 9.
Transfer characteristics: drain current as a
function of gate-source voltage; typical
valuesvalues
Fig 10.
Gate-source threshold voltage as a function of
junction temperature
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
8 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
003aab271
03aa27
10
-1
I
D
2
a
(A)
10
-2
1.5
min
typ
max
10
-3
10
-4
10
-5
1
0.5
0
10
-6
0
1
2
V
GS
(V)
3
−
60
0
60
120
180
T ( C)
°
j
Fig 11.
Sub-threshold drain current as a function of
gate-source voltage
Fig 12.
Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad150
10
V
DS
V
GS
(V)
I
D
8
V
GS(pl)
6
V
DS
= 12V
V
GS(th)
V
4
2
0
GS
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig 13.
Gate charge waveform definitions
0
25
50
75
100
G
(nC)
Q
Fig 14.
Gate-source voltage as a function of gate
charge; typical values
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
9 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
003aad151
003aad149
10
4
100
I
S
C
iss
(A)
C
(pF)
75
50
C
oss
10
3
C
rss
T =
150
C
°
j
25
C
°
25
0
10
2
10
-1
1
10
10
2
0
0.25
0.5
0.75
1
V
DS
(V)
V
SD
(V)
Fig 16.
Source current as a function of source-drain
voltage; typical values
Fig 15.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aad146
10
V
GS
(V) = 2.6
R
DS(on)
(m
Ω
)
7.5
5
2.5
0
2.8
3
3.5
4.5
10
0
25
50
75
100
I
D
(A)
Fig 17.
Drain-source on-state resistance as a function of drain current; typical values
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
10 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
7. Package
outline
Plastic single-ended surface-mounted package (LFPAK2); 4 leads
SOT1023
E
1
E
A
A
b
(3
×
)
2
b
1
c
1
mounting
base
D
1
D
H
L
1
2
3
4
b
X
e
w
A
c
C
A
1
θ
L
p
y
C
detail X
0
2.5
5 mm
scale
Dimensions
Unit
max 1.10 0.15 0.50 4.41
(1)
(1)
(1)
E
(1)
A
A
1
b
b
1
b
2
c
c
1
D
D
1
E
1
e
H
L
L
p
w
y
θ
°
0.25 0.30 4.70 4.45 5.30
3.7
6.2 1.3
0.85
5.9 0.8
0.40
8
mm nom
min 0.95
0.00 0.35 3.62
0.85
1.27
0.25 0.1
°
0.19 0.24 4.45
4.95 3.5
0
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
sot1023_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
08-10-13
09-05-26
SOT1023
Fig 18.
Package outline SOT1023; Package outline
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
11 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
8. Revision
history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN1R3-30YL_2
Modifications:
20090625
Product data sheet
–
PSMN2R3-30YL_1
•
Status changed from objective to product.
•
Various changes to content.
PSMN1R3-30YL_1
20090528
Objective data sheet
–
–
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
12 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
9. Legal
information
9.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Applications
— Applications that are described herein for any of these
9.2 Definitions
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale
— Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General
— Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes
— Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use
— Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
therefore such inclusion and/or use is at the customer’s own risk.
10. Contact information
©
Nexperia B.V. 2017. All rights reserved
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
13 of 14
PSMN1R3-30YL
Nexperia
N-channel 30 V 1.3 m
Ω
logic level MOSFET in LFPAK
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics
. . . . . . . . . . . . . . . . . . .5
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .12
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . . .13
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
25 June 2009
