Nexperia-PSMN2R9-25YLC-115
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PSMN2R9-25YLC
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
NextPower technology
Rev. 1 — 2 May 2011
Product data sheet
1. Product
profile
1.1 General
description
Logic level enhancement mode
N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features
and benefits
High reliability Power SO8 package,
Optimised for 4.5V Gate drive utilising
qualified to 175°C
NextPower Superjunction technology
Low parasitic inductance and
Ultra low Q
G
,
Q
GD and QOSS for high
system efficiencies at low and high
loads
resistance
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Power OR-ing
Server power supplies
Sync rectifier
1.4 Quick
reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
voltage
25 °C
≤
T
j
≤
175 °C
–
–
25
V
[1]
I
D
drain current
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
–
–
–
–
100
92
A
P
tot
T
j
total power
dissipation
T
mb
= 25 °C; see
Figure 2
–
W
°C
junction
-55
175
temperature
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
Table 1.
Symbol
Quick reference data
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
R
DSon
drain-source
on-state
V
GS
= 4.5 V; I
D
= 25 A;
T
j
= 25 °C;
–
3.45
4.1
m
Ω
resistance
see
Figure 12
V
GS
= 10 V; I
D
= 25 A;
–
2.65
3.15
m
Ω
T
j
= 25 °C;
see
Figure 12
Dynamic characteristics
Q
GD
gate-drain
charge
V
GS
= 4.5 V; I
D
= 25 A;
–
–
4.4
16
–
–
nC
nC
V
DS
= 12 V;
see
Figure 14
; see
Figure 15
Q
G(tot)
total gate
charge
[1] Continuous
current is limited by package.
2. Pinning
information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
mb
D
S
2
3
G
4
mbb076
mb
mounting base;
1
2 3 4
connected to drain
SOT669 (LFPAK;
Power-SO8)
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN2R9-25YLC
LFPAK;
plastic single-ended surface-mounted package; 4 leads
SOT669
Power-SO8
4. Marking
Table 4.
Marking codes
Type number
PSMN2R9-25YLC
Marking code
[1]
2C925L
[1] %
= placeholder for manufacturing site code.
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
2 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
25
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
25 °C
≤
T
j
≤
175 °C
–
V
DGR
V
GS
25 °C
≤
T
j
≤
175 °C; R
GS
= 20 k
Ω
–
25
V
-20
20
V
[1]
I
D
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
–
–
–
100
91
A
A
I
DM
peak drain current
pulsed; t
p
≤
10 µs; T
mb
= 25 °C;
517
A
see
Figure 4
P
tot
total power dissipation
storage temperature
T
mb
= 25 °C; see
Figure 2
–
92
W
°C
°C
°C
V
T
stg
T
j
-55
-55
–
175
175
260
–
junction temperature
T
sld(M)
V
ESD
Source-drain diode
peak soldering temperature
electrostatic discharge voltage
MM (JEDEC JESD22-A115)
380
I
S
source current
peak source current
T
mb
= 25 °C
–
–
83
A
A
I
SM
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
517
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤
25 V; unclamped; R
GS
= 50
Ω
;
see
Figure 3
–
47
mJ
[1] Continuous
current is limited by package.
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
3 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
003aaf795
03na19
120
150
I
D
(A)
P
der
(%)
120
80
(1)
90
60
30
40
0
0
0
0
50
100
150
200
50
100
150
200
T
(
°
C)
T
mb
(
°
C)
mb
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aaf 809
10
3
I
AL
(A)
10
2
(1)
(2)
10
1
10
-1
10
-3
10
-2
10
-1
1
10
t
AL
(m
s
)
Fig 3.
Single pulse avalanche rating; avalanche current as a function of avalanche time
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
4 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
003aaf796
10
4
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
t
p
=10
μ
s
100
μ
s
10
2
10
1
DC
1 ms
10 ms
100 ms
10
-1
0.1
1
10
100
V
DS
(V)
Fig 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal
characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to mounting base
see
Figure 5
–
1.46
1.64
K/W
003aaf797
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
0.1
t
p
δ
=
P
10
-1
0.05
T
0.02
t
t
p
single shot
T
10
-2
1e-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
5 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
25
–
–
V
V
V
22.5
1.05
–
–
V
GS(th)
gate-source threshold
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
1.54
1.95
voltage
see
Figure 10
; see
Figure 11
I
D
= 10 mA; V
DS
= V
GS
; T
j
= 150 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
V
DS
= 25 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 25 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -16 V; V
DS
= 0 V; T
j
= 25 °C
0.5
–
–
V
–
–
–
–
–
–
–
2.25
1
V
I
DSS
drain leakage current
gate leakage current
–
µA
µA
nA
nA
m
Ω
–
100
100
100
4.1
I
GSS
–
–
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 12
3.45
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 150 °C;
–
–
–
–
–
6.6
3.15
5.05
4
m
Ω
m
Ω
m
Ω
Ω
see
Figure 12
; see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 12
2.65
V
GS
= 10 V; I
D
= 25 A; T
j
= 150 °C;
–
see
Figure 12
; see
Figure 13
R
G
gate resistance
f = 1 MHz
2
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 12 V; V
GS
= 10 V;
see
Figure 14
; see
Figure 15
–
–
33
16
–
–
nC
nC
I
D
= 25 A; V
DS
= 12 V; V
GS
= 4.5 V;
see
Figure 14
; see
Figure 15
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V
–
–
–
29
5
–
–
–
nC
nC
nC
Q
GS
gate-source charge
I
D
= 25 A; V
DS
= 12 V; V
GS
= 4.5 V;
see
Figure 14
; see
Figure 15
Q
GS(th)
pre-threshold
3.4
gate-source charge
Q
GS(th-pl)
post-threshold
–
1.6
–
nC
gate-source charge
Q
GD
gate-drain charge
–
–
4.4
–
–
nC
V
V
GS(pl)
gate-source plateau
voltage
I
D
= 25 A; V
DS
= 12 V; see
Figure 14
;
see
Figure 15
2.55
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
DS
= 12 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16
–
–
–
2083
501
–
–
–
pF
pF
pF
reverse transfer
capacitance
160
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 12 V; R
L
= 0.5
Ω
; V
GS
= 4.5 V;
R
G(ext)
= 4.7
Ω
–
–
–
–
19.5
19
–
–
–
–
ns
ns
ns
ns
turn-off delay time
fall time
32
13
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
6 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
Table 7.
Symbol
Q
oss
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
output charge
V
GS
= 0 V; V
DS
= 12 V; f = 1 MHz;
T
j
= 25 °C
–
18.5
–
nC
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 17
–
0.8
1.1
V
t
rr
Q
r
t
a
reverse recovery time
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
–
–
–
32
23
18
–
–
–
ns
nC
ns
V
DS
= 12 V
recovered charge
reverse recovery rise
time
V
GS
= 0 V; I
S
= 25 A; dI
S
/dt = -100 A/µs;
V
DS
= 12 V; see
Figure 18
t
b
reverse recovery fall
time
–
14
–
ns
003aaf 798
003aaf 799
100
I
D
(A)
10
R
D
S
o
n
(m
Ω
)
10
3.5
3.0
2.8
80
60
40
20
0
8
6
4
2
0
4.5
2.6
V
GS
(V) =
2.4
2.2
0
1
2
3
4
0
4
8
12
16
V
DS
(V)
V
GS
(V)
Fig 6.
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
7 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
003aaf 804
003aaf 806
160
100
I
D
g
f
s
(A)
(
S
)
80
60
40
120
80
°
°
40
T
j
= 150
C
T
j
= 25
C
20
0
0
0
20
40
60
80
100
0
1
2
3
4
V
GS
(V)
I
D
(A)
Fig 8.
Forward transconductance as a function of
drain current; typical values
Fig 9.
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
003aaf 803
003aaf 802
10
-1
3
I
D
V
GS
(
th)
(V)
(A)
10
-2
Ma x
(1
m
A
)
I
D
=5mA
2
Min
Typ
M
a
x
1mA
10
-3
10
-4
10
-5
10
-6
Min (5
m
A
)
1
0
0
1
2
3
–
6
0
0
60
120
180
V
GS
(V)
T ( C)
°
j
Fig 10.
Sub-threshold drain current as a function of
gate-source voltage
Fig 11.
Gate-source threshold voltage as a function of
junction temperature
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
8 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
003aaf 800
003aaf 801
20
R
D
S
o
n
(m
Ω
)
2
2.6
2.8
a
V
GS
(V) =
3.0
V
GS
=10V
16
12
8
1.5
4.5V
1
0.5
0
3.5
4
4.5
10
0
0
20
40
60
80
100
D
(A)
–
6
0
0
60
120
180
I
T ( C)
°
j
Fig 12.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 13.
Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaf 807
10
V
GS
(V)
V
DS
8
I
D
6
20V
V
GS(pl)
12V
4
V
GS(th)
V
DS
= 5V
V
GS
2
0
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
0
10
20
30
40
003aaa508
Q
G
(nC)
Fig 14.
Gate charge waveform definitions
Fig 15.
Gate-source voltage as a function of gate
charge; typical values
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
9 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
003aaf 805
003aaf 808
10
4
100
I
S
(A)
C
(
p
F)
80
60
40
C
is s
10
3
C
o
s
s
T = 150 C
T = 25
C
°
j
°
j
20
0
C
rs s
10
2
0.1
1
10
100
0
0.4
0.8
1.2
V
DS
(V)
V
SD
(V)
Fig 16.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 17.
Source current as a function of source-drain
voltage; typical values
003aaf 444
I
D
(A)
t
rr
t
a
t
b
0
0.25 I
RM
I
RM
t (
s
)
Fig 18.
Reverse recovery timing definition
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
10 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
8. Package
outline
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
b
2
1
2
L
3
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2
e
A
(A )
3
C
A
1
θ
L
detail X
y
C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
D
(1)
D
(1)
(1)
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max
1.20 0.15 1.10
1.01 0.00 0.95
0.50 4.41
2.2 0.9
0.25 0.30 4.10
0.35 3.62
2.0 0.7
0.19 0.24 3.80
5.0 3.3
4.8 3.1
6.2 0.85 1.3
1.3
5.8 0.40 0.8
0.8
8
°
0
°
mm
0.25
4.20
1.27
0.25 0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
06-03-16
11-03-25
SOT669
MO-235
Fig 19.
Package outline SOT669 (LFPAK; Power-SO8)
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
11 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
9. Revision
history
Table 8.
Revision history
Release date
Document ID
Data sheet status
Change notice
Supersedes
PSMN2R9-25YLC v.1
20110502
Product data sheet
–
–
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
12 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
10. Legal information
10.1 Data
sheet status
Document status
[1] [2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Right to make changes
— Nexperia reserves the right to make
10.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use
— Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
10.3 Disclaimers
Limited warranty and liability
— Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the
customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever,
Nexperia’s
aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
13 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
Terms and conditions of commercial sale
— Nexperia
In the event that customer uses the product for design-in and use in
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
automotive applications to automotive specifications and standards, customer
(a) shall use the
product without Nexperia’s warranty
of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications
such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications
beyond Nexperia’s
standard warranty
and Nexperia’s product specifications
.
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
11. Contact
information
PSMN2R9-25YLC
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 May 2011
14 of 15
PSMN2R9-25YLC
Nexperia
N-channel 25 V 3.15 m
Ω
logic level MOSFET in LFPAK using
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics
. . . . . . . . . . . . . . . . . . .5
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .12
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
10.1
10.2
10.3
10.4
11
Contact information. . . . . . . . . . . . . . . . . . . . . .14
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
02 May 2011
