Nexperia-PSMN4R0-40YS-115
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PSMN4R0-40YS
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
Rev. 02 — 12 July 2010
Product data sheet
1. Product
profile
1.1 General
description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features
and benefits
Advanced TrenchMOS provides low
Improved mechanical and thermal
RDSon and low gate charge
characteristics
High efficiency gains in switching
LFPAK provides maximum power
power converters
density in a Power SO8 package
1.3 Applications
DC-to-DC convertors
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick
reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
Conditions
Min Typ Max
Unit
drain-source
voltage
T
j
≥
25 °C; T
j
≤
175 °C
–
–
–
–
–
40
V
I
D
drain current
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
–
100
106
A
P
tot
T
j
total power
dissipation
T
mb
= 25 °C; see
Figure 2
–
W
junction
-55
175 °C
temperature
Static characteristics
R
DSon
drain-source
V
GS
= 10 V; I
D
= 15 A;
T
j
= 100 °C; see
Figure 12
–
–
–
5.6
4.2
m
Ω
m
Ω
on-state
resistance
V
GS
= 10 V; I
D
= 15 A;
3.2
T
j
= 25 °C; see
Figure 12
;
see
Figure 13
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
Table 1.
Symbol
Quick reference data
…continued
Parameter Conditions
Min Typ Max
Unit
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 25 A;
–
–
7
–
–
nC
nC
V
DS
= 20 V; see
Figure 14
;
Q
G(tot)
total gate charge
38
see
Figure 15
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 100 A; V
sup
≤
40 V;
–
–
77
mJ
avalanche energy
unclamped; R
GS
= 50
Ω
2. Pinning
information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
mb
D
S
2
3
G
4
mbb076
mb
drain
1
2 3 4
SOT669 (LFPAK)
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN4R0-40YS
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
2 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
40
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 k
Ω
–
V
DGR
V
GS
–
40
V
-20
20
V
I
D
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
–
–
–
83
A
100
472
A
I
DM
peak drain current
pulsed; t
p
≤
10 µs; T
mb
= 25 °C;
A
see
Figure 3
P
tot
T
stg
T
j
total power dissipation
storage temperature
T
mb
= 25 °C; see
Figure 2
–
106
175
175
260
W
-55
-55
–
°C
°C
°C
junction temperature
T
sld(M)
peak soldering temperature
Source-drain diode
I
S
source current
peak source current
T
mb
= 25 °C
–
–
100
472
A
A
I
SM
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
–
77
mJ
avalanche energy
V
sup
≤
40 V; unclamped; R
GS
= 50
Ω
003aad266
03aa16
120
120
I
D
(A)
P
(%)
der
100
80
60
40
20
0
(1)
80
40
0
0
50
100
150
200
0
50
100
150
200
T
mb
(
°
C)
T
(
°
C)
mb
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN4R0-40YS
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
3 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
003aad321
10
3
10
μ
s
I
D
Limit R
DSon
= V
DS
/ I
D
(A)
10
2
10
1
(1)
100
μ
s
1ms
DC
10ms
100ms
10
-1
10
-1
1
10
10
2
V
DS
(V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
4 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
5. Thermal
characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance
from junction to
mounting base
see
Figure 4
–
0.54
1.42
K/W
003aac657
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
10
-1
10
-2
10
-3
0.1
0.05
0.02
t
p
δ
=
P
T
single shot
t
t
p
T
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
5 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
6. Characteristics
Table 6.
Characteristics
Tested to JEDEC standards where applicable.
Symbol
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
36
40
–
–
–
–
–
V
V
V
–
V
GS(th)
gate-source threshold
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
4.6
voltage
see
Figure 10
; see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
; see
Figure 11
1
2
–
–
V
V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 10
; see
Figure 11
3
4
I
DSS
drain leakage current
gate leakage current
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 125 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
–
–
–
–
–
–
–
–
–
–
3
µA
µA
nA
nA
m
Ω
40
I
GSS
100
100
5.6
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
see
Figure 12
V
GS
= 10 V; I
D
= 15 A; T
j
= 175 °C;
see
Figure 12
–
–
–
–
8
m
Ω
m
Ω
Ω
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
3.2
0.62
4.2
–
see
Figure 12
; see
Figure 13
R
G
internal gate resistance
f = 1 MHz
(AC)
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V
–
–
–
–
31
38
12
7
–
–
–
–
nC
nC
nC
nC
I
D
= 25 A; V
DS
= 20 V; V
GS
= 10 V;
see
Figure 14
; see
Figure 15
Q
GS
gate-source charge
Q
GS(th)
pre-threshold
gate-source charge
I
D
= 25 A; V
DS
= 20 V; V
GS
= 10 V;
see
Figure 14
Q
GS(th-pl)
Q
GD
post-threshold
gate-source charge
–
–
–
5
–
–
–
nC
nC
V
gate-drain charge
I
D
= 25 A; V
DS
= 20 V; V
GS
= 10 V;
see
Figure 14
; see
Figure 15
7
V
GS(pl)
gate-source plateau
voltage
I
D
= 25 A; V
DS
= 20 V; see
Figure 14
4.8
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
DS
= 20 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16
–
–
–
2410
504
–
–
–
pF
pF
pF
reverse transfer
capacitance
266
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 20 V; R
L
= 0.8
Ω
; V
GS
= 10 V;
R
G(ext)
= 4.7
Ω
–
–
–
–
18
19
34
12
–
–
–
–
ns
ns
ns
ns
turn-off delay time
fall time
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
6 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
Table 6.
Characteristics
…continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 17
–
0.83
1.2
V
t
rr
reverse recovery time
I
S
= 50 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
–
–
42
45
–
–
ns
V
DS
= 20 V
Q
r
recovered charge
nC
003aad154
003aad155
120
I
D
(A)
100
100
I
D
20
10
6.5
(A)
6
80
80
60
40
20
0
5.5
60
T
j
= 150
°
C
40
5
T
j
= 175
°
C
20
0
T
j
= 25
°
C
V
GS
(V) = 4.5
0
2
4
6
8
0
1
2
3
4
V
DS
(V)
V
GS
(V)
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aad159
003aad160
4000
80
C
g
fs
(pF)
(S)
C
iss
3000
60
40
20
0
2000
C
rss
1000
0
0
3
6
9
12
0
20
40
60
80
V
GS
(V)
I
D
(A)
Fig 7.
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 8.
Forward transconductance as a function of
drain current; typical values
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
7 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
003aad161
03aa35
−
1
10
15
I
D
R
DSon
(A)
(m
Ω
)
min
typ
max
−
2
−
3
−
4
−
5
−
6
10
12
9
6
3
10
10
10
10
0
0
5
10
15
20
0
2
4
6
V
GS
(V)
V
(V)
GS
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10.
Sub-threshold drain current as a function of
gate-source voltage
003aad280
03aa27
5
2
V
GS(th)
(V)
a
4
3
2
1
0
max
1.5
typ
1
0.5
0
min
−
60
0
60
120
180
−
60
0
60
120
180
T ( C)
°
j
T (
°
C)
j
Fig 11.
Gate-source threshold voltage as a function of
junction temperature
Fig 12.
Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
8 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
003aad162
12
V
GS
(V) = 5.5
V
DS
R
DSon
(m
Ω
)
I
D
9
6
3
6
V
GS(pl)
V
GS(th)
GS
6.5
V
7
8
Q
Q
GS1
GS2
10
20
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
0
30
60
90
120
I
D
(A)
Fig 13.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 14.
Gate charge waveform definitions
003aad157
003aad158
10
4
10
V
GS
V
DS
= 20V
C
(pF)
(V)
8
8V
C
iss
6
32V
10
3
4
2
0
C
oss
C
rss
10
2
10
-1
0
10
20
30
40
1
10
V
DS
(V) 10
2
Q
G
(nC)
Fig 15.
Gate-source voltage as a function of gate
charge; typical values
Fig 16.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
9 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
003aad156
100
I
S
(A)
80
60
40
20
0
T
j
= 150
°
C
T
j
= 175
°
C
T
j
= 25
°
C
0
0.3
0.6
0.9
1.2
V
SD
(V)
Fig 17.
Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
10 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
7. Package
outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
A
2
E
A
C
c
E
b
b
2
1
2
L
3
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2
e
A
(A )
3
C
A
1
θ
L
detail X
y
C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
D
(1)
D
(1)
(1)
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max
1.20 0.15 1.10
1.01 0.00 0.95
0.50 4.41
2.2 0.9
0.25 0.30 4.10
0.35 3.62
2.0 0.7
0.19 0.24 3.80
5.0 3.3
4.8 3.1
6.2 0.85 1.3
1.3
5.8 0.40 0.8
0.8
8
°
0
°
mm
0.25
4.20
1.27
0.25 0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-10-13
06-03-16
SOT669
MO-235
Fig 18.
Package outline SOT669 (LFPAK)
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
11 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
8. Revision
history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN4R0-40YS v.2
Modifications:
20100712
Product data sheet
–
PSMN4R0-40YS v.1
•
Various changes to content.
20090625 Product
data sheet
PSMN4R0-40YS v.1
–
–
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
12 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
9. Legal
information
9.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Suitability for use
— Nexperia products are not designed,
9.2 Definitions
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the Nexperia product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. Nexperia does not accept any liability in this respect.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in the
Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
9.3 Disclaimers
Limited warranty and liability
— Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale
— Nexperia
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever,
Nexperia’s
aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes
— Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
13 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the
product without Nexperia’s warranty
of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications
such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications
beyond Nexperia’s
standard warranty
and Nexperia’s product specification
s
.
10. Contact information
PSMN4R0-40YS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 12 July 2010
14 of 15
PSMN4R0-40YS
Nexperia
N-channel LFPAK 40 V 4.2 m
Ω
standard level MOSFET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics
. . . . . . . . . . . . . . . . . . .5
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .12
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .14
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
12 July 2010
