Nexperia-PSMN6R5-30MLDX
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PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
21 January 2019
Product data sheet
1. General
description
Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The
NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high
efficiency and the low spiking performance usually associated with MOSFE
T
s
w
ith an integrated
Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is
particularly suited to high efficiency applications at high switching frequencies.
2. Features
and benefits
•
Ultra low Q
G
, Q
GD
and Q
OSS
for high system efficiency, especially at higher switching
frequencies
•
•
•
•
•
•
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire
bonds, qualified to 175 °C
•
Exposed leads for optimal visual solder inspection
3. Applications
•
•
•
•
•
•
On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
4. Quick
reference data
Table 1. Quick reference data
Symbol
V
DS
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
drain current
25 °C ≤
T
j
≤ 175
°C
–
–
–
–
–
–
I
D
65
A
P
tot
51
W
Static characteristics
R
DSon
drain-source on-state
resistance
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C;
–
–
7
8.6
3
mΩ
nC
I
D
= 15 A; V
DS
= 15 V; V
GS
= 4.5 V;
1.7
Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
5. Pinning
information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
D
S
2
G
3
4
mbb076
mb
mounting base; connected to
drain
1
2
3
4
LFPAK33 (SOT1210)
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN6R5-30MLD
LFPAK33
Plastic single ended surface mounted package (LFPAK33); 8
leads
SOT1210
7. Marking
Table 4. Marking codes
Type number
Marking code
PSMN6R5-30MLD
6D530L
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤
T
j
≤ 175
°C
25 °C ≤
T
j
≤ 175
°C; R
GS
= 20 kΩ
–
30
V
V
DGR
V
GS
–
30
V
-20
20
V
P
tot
–
51
W
A
I
D
–
65
–
46
A
I
DM
peak drain current
storage temperature
junction temperature
–
262
175
175
260
A
T
stg
T
j
-55
-55
–
°C
°C
°C
T
sld(M)
peak soldering
temperature
Source-drain diode
I
S
source current
peak source current
T
mb
= 25 °C
–
–
42
A
A
I
SM
pulsed; t
p
≤ 10
µs; T
mb
= 25 °C
262
Avalanche ruggedness
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PSMN6R5-30MLD
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Nexperia B.
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Product data sheet
21 January 2019
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
Symbol
Parameter
Conditions
Min
Max
Unit
E
DS(AL)S
non-repetitive drain-
I
D
= 15 A; V
sup
≤ 30
V; R
GS
= 50 Ω;
–
42.7
mJ
source avalanche energy
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
t
p
= 146 µs
[1] Protected
by 100% test
120
03aa16
aaa-008449
80
60
40
20
0
I
D
(A)
P
der
(%)
80
40
0
0
50
100
150
200
0
25
50
75 100
125 150 175 200
(°C)
T
mb
T
(°C)
mb
Fig. 2.
Continuous drain current as a function of
mounting base temperature
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
aaa-008450
3
10
I
D
(A)
Limit R
= V
/ I
DS
DSon
D
2
10
t
p
= 10 us
100 us
10
DC
1 ms
10 ms
100 ms
1
-1
10
-1
2
10
1
10
10
V
DS
(V)
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
2.94
Unit
R
th(j-mb)
junction to mounting
base
–
2.72
K/W
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PSMN6R5-30MLD
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Nexperia B.
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Product data sheet
21 January 2019
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
Symbol
Parameter
Conditions
Min
Typ
57
Max
Unit
K/W
K/W
R
th(j-a)
junction to ambient
–
–
–
–
178
aaa-008451
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
t
p
-1
P
10
δ =
0.02
T
single shot
t
t
p
T
-2
10
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-008476
aaa-008477
Fig. 5.
PCB layout for thermal resistance junction to
ambient 1″ square pad; FR4 Board; 2oz copper
Fig. 6.
PCB layout for thermal resistance junction to
ambient minimum footprint; FR4 Board; 2oz
copper
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
30
27
1.2
–
–
V
V
V
–
–
V
GS(th)
gate-source threshold
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 25 °C
voltage
1.68
2.2
ΔV
GS(th)
/ΔT
gate-source threshold
25 °C ≤
T
j
≤ 150
°C
voltage variation with
–
-3.9
–
mV/K
temperature
I
DSS
drain leakage current
gate leakage current
V
DS
= 24 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 24 V; V
GS
= 0 V; T
j
= 125 °C
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C
–
–
–
–
1
µA
µA
nA
0.42
–
–
I
GSS
100
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PSMN6R5-30MLD
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Nexperia B.
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Product data sheet
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
Symbol
Parameter
Conditions
Min
Typ
Max
100
8.6
Unit
nA
V
GS
= -16 V; V
DS
= 0 V; T
j
= 25 °C
–
–
–
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C;
7
mΩ
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 150 °C;
–
–
–
–
–
14.2
6.5
mΩ
mΩ
mΩ
Ω
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
5.5
–
V
GS
= 10 V; I
D
= 15 A; T
j
= 150 °C;
10.7
1.5
R
G
gate resistance
f = 1 MHz
0.44
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 15 A; V
DS
= 15 V; V
GS
= 10 V;
–
–
13.6
6.4
20
10
nC
nC
I
D
= 15 A; V
DS
= 15 V; V
GS
= 4.5 V;
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V
–
–
–
12.7
1.5
–
nC
nC
nC
Q
GS
gate-source charge
I
D
= 15 A; V
DS
= 15 V; V
GS
= 4.5 V;
4
–
Q
GS(th)
pre-threshold gate-
source charge
1.3
Q
GS(th-pl)
post-threshold gate-
source charge
–
0.2
–
nC
Q
GD
gate-drain charge
–
–
1.7
2
3
–
nC
V
V
GS(pl)
gate-source plateau
voltage
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
DS
= 15 V; V
GS
= 0 V; f = 1 MHz;
–
–
–
817
605
62
–
–
–
pF
pF
pF
reverse transfer
capacitance
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 15 V; R
L
= 1 Ω; V
GS
= 4.5 V;
R
G(ext)
= 5 Ω
–
–
–
–
–
7.5
11
–
–
–
–
–
ns
ns
ns
ns
nC
turn-off delay time
fall time
9.8
7.2
12.3
Q
oss
output charge
V
GS
= 0 V; V
DS
= 15 V; f = 1 MHz;
T
j
= 25 °C
Source-drain diode
V
SD
t
rr
source-drain voltage
–
–
–
–
0.81
23.8
12.6
10.3
1.2
V
reverse recovery time
I
S
= 15 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
–
–
–
ns
nC
ns
Q
r
t
a
recovered charge
reverse recovery rise
time
t
b
S
reverse recovery fall
time
–
–
13.5
1.3
–
–
ns
softness factor
[1] includes
capacitive recovery
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PSMN6R5-30MLD
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Product data sheet
21 January 2019
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
aaa-008454
aaa-008452
60
60
50
40
30
20
10
0
10 V
4.5 V
3.5 V
I
D
I
D
(A)
(A)
48
36
24
12
0
V
GS
= 3 V
2.8 V
150°C
T =
25°C
j
2.6 V
2.4 V
0
0.8
1.6
2.4
3.2
(V)
4
0
0.5
1
1.5
2
2.5
(V)
3
V
V
DS
GS
Fig. 7.
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 8.
Output characteristics; drain current as a
function of drain-source voltage; typical values
aaa-008453
aaa-008455
20
40
R
(mΩ)
R
(mΩ)
DSon
DSon
2.8 V
3 V
16
12
8
32
24
16
8
3.5 V
4.5 V
10 V
4
0
0
0
2
4
6
8
10
12
GS
14
(V)
16
0
12
24
36
48
I (A)
D
60
V
Fig. 9.
Drain-source on-state resistance as a function
Fig. 10.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
of drain current; typical values
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Nexperia B.
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Product data sheet
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
003aal037
2
a
V
DS
I
D
10 V
1.6
1.2
0.8
0.4
0
V
V
GS(pl)
GS(th)
V
= 4.5 V
GS
V
GS
Q
GS2
Q
GS1
Q
Q
GD
G(tot)
GS
Q
003aaa508
Fig. 12.
Gate charge waveform definitions
-60 -30
0
30
60
90 120
150 180
T (°C)
j
Fig. 11.
Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-008456
aaa-008457
4
3
2
10
10
V
GS
C
(V)
(pF)
8
6
4
2
0
C
C
iss
10
oss
24 V
15 V
10
V
= 6 V
DS
C
rss
10
10
-1
2
0
3
6
9
12
(nC)
15
1
10
10
Q
V
(V)
G
DS
Fig. 14.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 13.
Gate-source voltage as a function of gate
charge; typical values
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PSMN6R5-30MLD
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Nexperia B.
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019. All rights reserved
Product data sheet
21 January 2019
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
003aal160
aaa-008458
2
10
I
S
I
D
(A)
(A)
t
rr
10
t
t
b
a
0
1
0.25 I
RM
150°C
T =
25°C
j
I
RM
-1
10
t (s)
0
0.2
0.4
0.6
0.8
1
(V)
1.2
V
SD
Fig. 16.
Reverse recovery timing definition
Fig. 15.
Source current as a function of source-drain
voltage; typical values
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PSMN6R5-30MLD
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Nexperia B.
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019. All rights reserved
Product data sheet
21 January 2019
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
11. Package
outline
Plastic single ended surface mounted package (LFPAK33); 8 leads
SOT1210
E
A
e
1
A
c
1
b
1
L
1
D
2
mounting
base
D
1
(D)
H
E
1
L
1
4
X
b
w
A
e
c
A
C
1
Lp
y
C
detail X
0
1
2.5
5 mm
scale
Dimensions
(1)
(1)
(1)
(1)
E
Unit
A
A
b
b
1
c
c
D ref
2.60
D
D
E
e
e
H
L
L
L
p
w
y
1
1
2
1
1
1
max 0.90 0.10 0.35
2.4 0.20
0.30
nom
2.35
1.90
3.40 2.45
3.20 2.00
3.40 0.65
0.25 0.50
3.20 0.45
0.13 0.30
mm
0.50
0.65 0.65
0.20 0.10
0.80 0.00 0.25
2.2 0.10
0.20
min
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
sot1210_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-04-25
16-08-09
SOT1210
Fig. 17.
Package outline LFPAK33 (SOT1210)
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PSMN6R5-30MLD
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Nexperia B.
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Product data sheet
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
12. Soldering
Footprint information for reflow soldering of LFPAK33 package
SOT1210
2.35
2.25
0.635 0.617
0.05 (all around)
1.05
0.62
0.75
1.91
0.51
2.47
3.9
0.51
0.6
0.83
0.4 (x8)
0.3 (x8)
0.65 (x6)
0.25 (x6)
solder paste
aperture
solder land
Notes : 1. Dimensions in mm
occupied area
solder resist
sot1210_fr
Fig. 18.
Reflow soldering footprint for LFPAK33 (SOT1210)
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Product data sheet
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
6
.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
13. Legal
information
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status
Product
Definition
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Definitions
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale
— Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Disclaimers
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, the
product is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
T
e
rms and conditions of commercial sale of Nexperia.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Right to make changes
— Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Trademarks
Suitability for use
— Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN6R5-30MLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.
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.
2
019. All rights reserved
Product data sheet
21 January 2019
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Nexperia
PSMN6R5-30MLD
N-channel 30
V
,
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.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
Contents
©
Nexperia B.
V
.
2
019. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 January 2019
©
PSMN6R5-30MLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
019. All rights reserved
Product data sheet
21 January 2019
12 / 12
