Nexperia-PSMN7R0-30YL-115
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PSMN7R0-30YL
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
Rev. 04 — 9 March 2011
Product data sheet
1. Product
profile
1.1 General
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features
and benefits
High efficiency due to low switching
Suitable for logic level gate drive
and conduction losses
sources
1.3 Applications
Class-D amplifiers
DC-to-DC converter
Motor control
Server power supplies
1.4 Quick
reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
Conditions
Min Typ Max
Unit
drain-source voltage
T
j
≥
25 °C; T
j
≤
175 °C
–
–
–
–
30
76
V
A
I
D
drain current
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
P
tot
T
j
total power
dissipation
T
mb
= 25 °C; see
Figure 2
–
–
–
51
W
junction temperature
-55
175 °C
Static characteristics
R
DSon
drain-sourc
e
o
n-state V
GS
= 10 V; I
D
= 15 A;
–
4.92
7
m
Ω
resistance
T
j
= 25 °C
Dynamic characteristics
Q
GD
gate-drain charge
total gate charge
V
GS
= 4.5 V; I
D
= 10 A;
V
DS
= 12 V; see
Figure 14
;
see
Figure 15
–
–
2.9
10
–
–
nC
nC
Q
G(tot)
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 65 A; V
sup
≤
30 V;
R
GS
= 50
Ω
; unclamped
–
–
21
mJ
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
2. Pinning
information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
mb
D
S
2
3
G
4
mbb076
mb
mounting base; connected to
drain
1
2 3 4
SOT669 (LFPAK)
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN7R0-30YL
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
peak drain-source voltage
T
j
≥
25 °C; T
j
≤
175 °C
–
–
V
DSM
t
p
≤
25 ns; f
≤
500 kHz; E
DS(AL)
≤
90 nJ;
35
V
pulsed
V
DGR
V
GS
I
D
drain-gate voltage
gate-source voltage
drain current
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 k
Ω
–
30
20
53
V
V
A
A
A
-20
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
–
–
–
76
I
DM
peak drain current
pulsed; t
p
≤
10 µs; T
mb
= 25 °C;
260
see
Figure 3
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
T
mb
= 25 °C; see
Figure 2
–
51
W
-55
-55
175
175
°C
°C
Source-drain diode
I
S
source current
peak source current
T
mb
= 25 °C
–
–
65
A
A
I
SM
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
260
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 65 A;
V
sup
≤
30 V; R
GS
= 50
Ω
; unclamped
–
21
mJ
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
2 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
003aac720
03aa16
120
100
I
D
(A)
P
der
(%)
80
80
60
40
20
40
0
0
0
50
100
150
200
0
50
100
150
200
T
mb
(
°
C)
T
(
°
C)
mb
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aac732
10
3
I
D
Limit R
DSon
= V
DS
/ I
D
(A)
10
2
10
s
μ
100
s
μ
10
1
DC
1 ms
10 ms
100 ms
10
-1
10
-1
1
10
10
2
V
DS
(V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
3 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
5. Thermal
characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to mounting base
see
Figure 4
–
1.4
2.45
K/W
003aac721
10
Z
th(j-mb)
(K/W)
δ
= 0.5
1
10
-1
10
-2
0.2
0.1
0.05
t
p
δ
=
P
0.02
T
t
t
p
single shot
T
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
4 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
6. Characteristics
Table 6.
Characteristics
Tested to JEDEC standards where applicable.
Symbol
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
30
27
1.3
–
–
V
V
V
–
–
V
GS(th)
gate-source threshold
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
1.7
2.15
voltage
see
Figure 11
; see
Figure 12
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 150 °C;
see
Figure 12
0.65
–
–
–
–
V
V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 12
2.45
I
DSS
drain leakage current
gate leakage current
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -16 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C
–
–
–
–
–
–
–
1
µA
µA
nA
–
100
100
100
9.1
12.2
I
GSS
–
–
nA
R
DSon
drain-source on-state
resistance
6.97
–
m
Ω
m
Ω
V
GS
= 10 V; I
D
= 15 A; T
j
= 150 °C;
see
Figure 13
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C
f = 1 MHz
–
–
4.92
0.6
7
m
Ω
R
G
gate resistance
1.5
Ω
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 10 A; V
DS
= 12 V; V
GS
= 4.5 V;
see
Figure 14
; see
Figure 15
–
10
–
nC
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V
–
–
20
22
–
–
nC
nC
I
D
= 10 A; V
DS
= 12 V; V
GS
= 10 V;
see
Figure 14
; see
Figure 15
Q
GS
gate-source charge
I
D
= 10 A; V
DS
= 12 V; V
GS
= 4.5 V;
see
Figure 14
; see
Figure 15
–
–
3.7
2.1
–
–
nC
nC
Q
GS(th)
pre-threshold
gate-source charge
Q
GS(th-pl)
post-threshold
–
1.6
–
nC
gate-source charge
Q
GD
gate-drain charge
–
–
2.9
2.6
–
–
nC
V
V
GS(pl)
gate-source plateau
voltage
V
DS
= 12 V; see
Figure 14
;
see
Figure 15
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
DS
= 12 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16
–
–
–
1270
255
–
–
–
pF
pF
pF
reverse transfer
capacitance
145
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 12 V; R
L
= 0.5
Ω
; V
GS
= 4.5 V;
R
G(ext)
= 4.7
Ω
–
–
–
–
24
39
30
11
–
–
–
–
ns
ns
ns
ns
turn-off delay time
fall time
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
5 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
Table 6.
Characteristics
…continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 17
–
0.88
1.2
V
t
rr
reverse recovery time
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
–
–
30
22
–
–
ns
V
DS
= 20 V
Q
r
recovered charge
nC
003aac729
003aac728
80
60
I
D
g
fs
(A)
(S)
60
40
20
0
50
40
T
j
= 150
°
C
25
°
C
30
0
1
2
3
4
GS
(V)
0
10
20
30
40
V
I
D
(A)
Fig 5.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 6.
Forward transconductance as a function of
drain current; typical values
003aac727
003aac726
100
14
10
I
D
R
DSon
(A)
(m
Ω
)
V
GS
(V) = 4.5
80
12
10
8
60
3.2
3
40
2.8
6
20
2.6
2.4
2.2
4
0
2
4
6
8
10
0
2
4
6
8
10
V
GS
(V)
V
DS
(V)
Fig 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 8.
Output characteristics: drain current as a
function of drain-source voltage; typical values
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
6 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
003aac724
003aac722
2500
16
R
DSon
3.2
C
(pF)
(m
Ω
)
C
iss
14
2000
1500
1000
500
12
10
8
C
rss
V
GS
(V) = 4.5
6
10
0
0
4
2
4
6
8
10
GS
(V)
0
20
40
60
80
100
I
D
(A)
V
Fig 9.
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 10.
Drain-source on-state resistance as a function
of drain current; typical values
003aab271
003aac337
10
-1
3
I
D
(A)
10
-2
V
GS
(
th)
(V)
max
min
typ
max
2
10
-3
10
-4
10
-5
10
-6
typ
m
i
n
1
0
–
6
0
0
1
2
V
GS
(V)
3
0
60
120
180
T
j
(
°
C)
Fig 11.
Sub-threshold drain current as a function of
gate-source voltage
Fig 12.
Gate-source threshold voltage as a function of
junction temperature
PSMN7R0-30YL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
7 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
03aa27
2
V
DS
a
I
D
1.5
1
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
0.5
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
−
60
0
60
120
180
T ( C)
°
j
Fig 13.
Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14.
Gate charge waveform definitions
003aac725
003aac723
10
1600
V
GS
(V)
C
iss
C
(pF)
8
V
DS
= 12 (V)
1200
800
400
0
C
oss
6
V
DS
= 19 (V)
4
2
0
C
rss
0
5
10
15
20
25
G
(nC)
10
-1
1
10
10
2
V
DS
(V)
Q
Fig 15.
Gate-source voltage as a function of gate
charge; typical values
Fig 16.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
8 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
003aac730
80
I
S
(A)
60
40
20
0
T
j
= 150
°
C
25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
SD
(V)
V
Fig 17.
Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN7R0-30YL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
9 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
7. Package
outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
A
2
E
A
C
c
E
b
b
2
1
2
L
3
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2
e
A
(A )
3
C
A
1
θ
L
detail X
y
C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
D
(1)
D
(1)
(1)
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max
1.20 0.15 1.10
1.01 0.00 0.95
0.50 4.41
2.2 0.9
0.25 0.30 4.10
0.35 3.62
2.0 0.7
0.19 0.24 3.80
5.0 3.3
4.8 3.1
6.2 0.85 1.3
1.3
5.8 0.40 0.8
0.8
8
°
0
°
mm
0.25
4.20
1.27
0.25 0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-10-13
06-03-16
SOT669
MO-235
Fig 18.
Package outline SOT669 (LFPAK)
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
10 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
8. Revision
history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN7R0-30YL v.4
Modifications:
20110309
Product data sheet
–
PSMN7R0-30YL v.3
•
Various changes to content.
PSMN7R0-30YL v.3
PSMN7R0-30YL v.2
PSMN7R0-30YL v.1
20100104
20090105
20081015
Product data sheet
–
–
–
PSMN7R0-30YL v.2
Product data sheet
PSMN7R0-30YL v.1
–
Preliminary data sheet
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
11 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
9. Legal
information
9.1 Data
sheet status
Document status
[1] [2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Suitability for use
— Nexperia products are not designed,
9.2 Definitions
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability
— Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the
customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever,
Nexperia’s
aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
Right to make changes
— Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale
— Nexperia
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
12 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications
such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications
beyond Nexperia’s
standard warranty
and Nexperia’s product specifications
.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the
product without Nexperia’s warranty
of the
10. Contact information
PSMN7R0-30YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 9 March 2011
13 of 14
PSMN7R0-30YL
Nexperia
N-channel 30 V 7 m
Ω
logic level MOSFET in LFPAK
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics
. . . . . . . . . . . . . . . . . . .4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
1
1
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
09 March 2011
