Nexperia-PSMN8R5-60YS-115
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PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
22 July 2015
Product data sheet
1. General
description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features
and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
•
•
•
•
LFPAK provides maximum power density in a Power SO8 package
3. Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
•
•
•
•
•
4. Quick
reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
60
Unit
V
V
DS
I
D
drain-source voltage
drain current
T
j
≥ 25 °C; T
j
≤ 175 °C
–
–
–
–
–
–
76
A
P
tot
T
j
junction temperature
–
106
175
W
-55
°C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
–
–
–
12.8
8
mΩ
mΩ
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
5.6
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 60 A; V
DS
= 30 V;
–
7.7
–
nC
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 60 A; V
DS
= 30 V;
–
39
–
nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 76 A;
V
sup
≤ 60 V; R
GS
= 50 Ω; unclamped
–
–
97
mJ
source avalanche
energy
5. Pinning
information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
S
S
S
G
D
source
source
source
gate
2
G
3
mbb076
4
1
2 3 4
mb
mounting base; connected to
drain
LFPAK56; Power-
SO8 (SOT669)
6. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT669
PSMN8R5-60YS
LFPAK56;
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
Power-SO8
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN8R5-60YS
8R560
8. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
drain-gate voltage
T
j
≥ 25 °C; T
j
≤ 175 °C
T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
= 20 kΩ
–
–
60
60
V
DGR
V
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
2 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Symbol
V
GS
P
tot
Parameter
Conditions
Min
Max
20
Unit
V
gate-source voltage
total power dissipation
drain current
-20
–
106
54
W
A
I
D
–
–
76
A
I
DM
peak drain current
–
303
175
175
260
A
T
stg
T
j
storage temperature
junction temperature
peak soldering temperature
-55
-55
–
°C
°C
°C
T
sld(M)
Source-drain diode
I
S
source current
peak source current
T
mb
= 25 °C
–
–
76
A
A
I
SM
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
303
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 76 A;
V
sup
≤ 60 V; R
GS
= 50 Ω; unclamped
–
97
mJ
03aa16
120
P
der
(%)
80
40
0
0
50
100
150
200
T
(°C)
mb
Fig. 1.
Normalized total power dissipation as a function of mounting base temperature
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
3 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
003aad791
100
D
I
(A)
80
60
40
20
0
0
50
100
150
200
T
(
C)
°
mb
Fig. 2.
Continuous drain current as a function of mounting base temperature
003aad792
3
10
I
D
(A)
Li
m
i
t R
= V
/ I
DS D
DSon
2
10
t
= 10 µs
p
100 µs
10
DC
1 ms
1
10 ms
100 ms
– 1
10
– 1
2
3
10
1
10
10
10
V
(V)
DS
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal
characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
–
0.63
1.42
K/W
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
4 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
003aad834
1
d = 0.5
Z
th(j-mb)
(K/W)
0.2
0.1
10
-1
10
-2
10
-3
0.05
0.02
t
p
P
δ =
T
single shot
t
t
p
T
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
54
60
2
–
–
V
V
V
–
–
V
GS(th)
gate-source threshold
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
voltage
3
3.8
gate-source threshold
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
V
GSth
–
–
–
4.3
–
V
V
voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
0.95
I
DSS
drain leakage current
gate leakage current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 125 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
–
–
–
–
–
0.03
–
2
µA
µA
nA
nA
mΩ
50
I
GSS
2
100
100
18.4
2
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 175 °C;
12
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
–
–
–
–
12.8
mΩ
mΩ
Ω
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
5.6
8
–
R
G
gate resistance
f = 1 MHz
0.61
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
5 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 60 A; V
DS
= 30 V; V
GS
= 10 V;
–
39
–
nC
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V
–
–
33
–
–
nC
nC
Q
GS
gate-source charge
I
D
= 60 A; V
DS
= 30 V; V
GS
= 10 V;
13.3
Q
GS(th)
Q
GS(th-pl)
Q
GD
pre-threshold gate-
source charge
I
D
= 60 A; V
DS
= 30 V; V
GS
= 10 V;
–
–
–
–
7
–
–
–
–
nC
nC
nC
V
post-threshold gate-
source charge
6.2
7.7
5.2
gate-drain charge
I
D
= 60 A; V
DS
= 30 V; V
GS
= 10 V;
V
GS(pl)
gate-source plateau
voltage
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
DS
= 30 V; V
GS
= 0 V; f = 1 MHz;
–
–
–
2370
307
–
–
–
pF
pF
pF
reverse transfer
capacitance
172
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 30 V; R
L
= 0.5 Ω; V
GS
= 10 V;
R
G(ext)
= 4.7 Ω
–
–
–
–
18.4
13.7
32.4
9.2
–
–
–
–
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
V
SD
source-drain voltage
t
rr
–
–
–
0.8
1.2
V
reverse recovery time
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
43.3
61.4
–
–
ns
nC
V
DS
= 30 V
Q
r
recovered charge
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
6 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
003aad801
003aad794
60
4000
C
(pF)
C
iss
g
fs
(S)
3000
2000
1000
0
40
C
rss
20
0
0
20
40
60
80
0
3
6
9
12
V
(V)
I
(A)
GS
D
Fig. 5.
Forward transconductance as a function of
drain current; typical values
Fig. 6.
Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
003aad795
003aad797
40
80
5.5
10
7
6
I
D
R
DSon
(A)
(mΩ)
30
60
5
20
10
0
40
20
0
V
(V) = 4.5
GS
4
8
12
16
20
0
0.5
1
1.5
2
V
(V)
GS
V
(V)
DS
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 8.
Output characteristics: drain current as a
function of drain-source voltage; typical values
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
7 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
aaa-019191
003aad796
-1
10
80
I
D
I
D
(A)
(A)
-2
-3
-4
-5
-6
10
60
Min
Typ
Max
10
10
10
10
40
20
0
T =
25 °C
T =
175 °C
j
j
0
2
4
6
0
1
2
3
4
GS
5
V
(V)
GS
V
(V)
T
j
= 25 °C; V
DS
= 5V
Fig. 9.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 10.
Sub-threshold drain current as a function of
gate-source voltage
aaa-019190
003aad696
5
2.4
V
GS(th)
(V)
a
2
4
3
2
1
0
Max
Typ
1.6
1.2
0.8
0.4
0
Min
-60 -30
0
30
60
90 120
150 180
T (°C)
–
6
0
0
60
120
180
T ( C)
°
j
j
I
D
= 1 mA ; V
DS
= V
GS
Fig. 12.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
Fig. 11.
Gate-source threshold voltage as a function of
junction temperature
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
8 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
003aad798
25
V
5.5
DS
V
(V) = 5
GS
R
DSon
(m
)
Ω
I
D
20
15
10
5
V
V
GS(pl)
GS(th)
V
GS
6
Q
GS2
Q
GS1
7
8
Q
GS
Q
GD
Q
G(tot)
10
003aaa508
Fig. 14.
Gate charge waveform definitions
0
20
40
60
80
I
(A)
D
Fig. 13.
Drain-source on-state resistance as a function
of drain current; typical values
003aad799
003aad800
4
10
10
V
GS
(V)
C
12 V
(pF)
8
6
4
2
0
V
DS
= 30 V
C
iss
48 V
3
10
C
oss
C
rss
2
10
2
– 1
0
20
40
60
1
10
10
10
V
(V)
Q
G
(nC)
DS
Fig. 15.
Gate-source voltage as a function of gate
charge; typical values
Fig. 16.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
9 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
003aad802
80
I
S
(A)
60
40
20
0
T =
175 °C
j
T =
25 °C
j
0
0.4
0.8
1.2
V
SD
(V)
Fig. 17.
Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
10 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
11. Package
outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41
2.2 0.9
0.25 0.30 4.10 4.20
5.0 3.3
6.2 0.85 1.3
1.3
5.8 0.40 0.8
0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62
2.0 0.7
0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
References
Outline
version
European
projection
Issue date
11-03-25
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 18.
Package outline LFPAK56; Power-SO8 (SOT669)
©
PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 July 2015
11 / 14
Nexperia
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation –
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data
sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
Document
Product
Definition
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Right to make changes
— Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Suitability for use
— Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
12.2 Definitions
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Nexperia does not accept any liability related to any default,
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale
— Nexperia
12.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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PSMN8R5-60YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
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Nexperia
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N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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Nexperia
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N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
13. Contents
1
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
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Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
22 July 2015
©
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All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
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22 July 2015
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