Nexperia-PUMD4-115
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Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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–
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DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD4; PUMD4
NPN/PNP resistor-equipped
transistors; R1 = 10 k
Ω
, R2 = open
Product data sheet
2003 Oct 10
Supersedes data of 2002 Jan 14
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 10 k
Ω
, R2 = open
PEMD4; PUMD4
FEATURES
QUICK REFERENCE DATA
•
Built-in bias resistors
SYMBOL
PARAMETER
TYP. MAX. UNIT
•
Simplified circuit design
V
CEO
collector-emitter
voltage
−
50
V
•
Reduction of component count
•
Reduced pick and place costs.
I
O
output current (DC)
NPN
−
100
−
mA
−
TR1
TR2
R1
−
PNP
−
−
−
APPLICATIONS
bias resistor
open
10
−
−
k
Ω
−
•
Low current peripheral driver
R2
−
•
Replacement for general purpose transistors in digital
applications
DESCRIPTION
•
Control of IC inputs.
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE
PNP/PNP
COMPLEMENT
NPN/NPN
COMPLEMENT
MARKING CODE
NUMBER
PHILIPS
SOT666
SOT363
EIAJ
PEMD4
PUMD4
23
PEMB4
PUMB4
PEMH4
PUMH4
SC-88
D*4
Note
1. *
= p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
DESCRIPTION
PEMD4
PUMD4
1
2
3
4
5
6
emitter TR1
base TR1
6
5
4
handbook, halfpage
6
5
4
collector TR2
emitter TR2
base TR2
R1
R1
TR2
TR1
collector TR1
1
2
3
1
2
3
Top view
MDB814
2003 Oct 10
2
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 10 k
Ω
, R2 = open
PEMD4; PUMD4
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
SOT666
SOT363
PEMD4
PUMD4
−
−
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
O
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT363
open emitter
open base
−
−
−
−
−
50
V
V
V
50
open collector
5
100
100
mA
mA
I
CM
P
tot
T
amb
≤
25
°
C
note 1
−
−
200
mW
mW
°
C
SOT666
notes 1 and 2
200
T
stg
T
j
storage temperature
junction temperature
operating ambient temperature
−
65
−
+150
150
°
C
T
amb
−
65
+150
°
C
Per device
P
tot
total power dissipation
SOT363
T
amb
≤
25
°
C
note 1
−
−
300
300
mW
mW
SOT666
notes 1 and 2
Notes
1. Device
mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow
soldering is the only recommended soldering method.
2003 Oct 10
3
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 10 k
Ω
, R2 = open
PEMD4; PUMD4
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per transistor
R
th j-a
thermal resistance from junction to ambient
T
amb
≤
25
°
C
SOT363
SOT666
note 1
625
625
K/W
K/W
notes 1 and 2
Per device
R
th j-a
thermal resistance from junction to ambient
T
amb
≤
25
°
C
note 1
SOT363
SOT666
416
416
K/W
K/W
notes 1 and 2
Notes
1. Device
mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow
soldering is the only recommended soldering method.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
collector-base cut-off current
collector-emitter cut-off current
V
CB
= 50 V; I
E
= 0
−
−
100
1
nA
μ
A
μ
A
nA
V
CE
= 30 V; I
B
= 0
−
−
V
CE
= 30 V; I
B
= 0; T
j
= 150
°
C
V
EB
= 5 V; I
C
= 0
−
−
50
100
−
I
EBO
h
FE
emitter-base cut-off current
DC current gain
−
−
V
CE
= 5 V; I
C
= 1 mA
200
−
−
V
CEsat
R1
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
input resistor
−
150
13
mV
7
10
k
Ω
C
c
collector capacitance
TR1 (NPN)
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
−
−
−
−
2.5
3
pF
pF
TR2 (PNP)
2003 Oct 10
4
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 10 k
Ω
, R2 = open
PEMD4; PUMD4
PACKAGE OUTLINES
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2003 Oct 10
5
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 10 k
Ω
, R2 = open
PEMD4; PUMD4
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M
B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2003 Oct 10
6
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 10 k
Ω
, R2 = open
PEMD4; PUMD4
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Oct 10
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp8
Date of release: 2003 Oct 10
Document order number:
9397 750 11826
