Nexperia-PUMH17-115
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Download  | Nexperia-PUMH17-115 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
PEMH17; PUMH17
NPN/NPN resistor-equipped transistors;
R1 = 47 k
Ω
, R2 = 22 k
Ω
Rev. 03 — 15 November 2009
Product data sheet
1. Product
profile
1.1 General
description
NPN/NPN Resistor-Equipped Transistors (RET).
Table 1.
Product overview
Type number
Package
NXP
NPN/PNP
complement
PNP/PNP
complement
JEITA
–
PEMH17
PUMH17
SOT666
SOT363
PEMD17
PUMD17
PEMB17
PUMB17
SC-88
1.2 Features
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick
reference data
Table 2.
Symbol
V
CEO
I
O
Quick reference data
Parameter
Conditions
Min
–
Typ
–
Max
50
Unit
V
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
open base
–
–
100
61
mA
k
Ω
R1
33
0.37
47
0.47
R2/R1
0.57
PEMH17; PUMH17
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 47 k
Ω
, R2 = 22 k
Ω
2. Pinning
information
Table 3.
Pinning
Pin
1
Description
Simplified outline
Symbol
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
6
5
4
6
5
4
2
3
R1
R2
4
TR2
5
TR1
1
2
3
6
001aab555
R2
R1
1
2
3
sym063
3. Ordering
information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
SOT666
SOT363
PEMH17
PUMH17
–
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
SC-88
4. Marking
Table 5.
Marking codes
Type number
PEMH17
Marking code
[1]
5T
PUMH17
H4*
[1] *
= -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PEMH17_PUMH17_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
2 of 9
PEMH17; PUMH17
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 47 k
Ω
, R2 = 22 k
Ω
5. Limiting
values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
open emitter
open base
–
–
–
50
50
10
V
V
V
collector-emitter voltage
emitter-base voltage
input voltage
open collector
positive
–
–
–
–
+40
−
10
100
100
V
negative
V
I
O
output current (DC)
peak collector current
total power dissipation
SOT363
mA
mA
I
CM
P
tot
T
amb
≤
25
°
C
[1]
–
200
mW
mW
°
C
[1][2]
SOT666
–
200
T
stg
storage temperature
junction temperature
ambient temperature
−
65
–
+150
150
T
j
°
C
T
amb
−
65
+150
°
C
Per device
P
tot
total power dissipation
SOT363
T
amb
≤
25
°
C
[1]
–
–
300
300
mW
mW
[1][2]
SOT666
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow
soldering is the only recommended soldering method.
PEMH17_PUMH17_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
3 of 9
PEMH17; PUMH17
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 47 k
Ω
, R2 = 22 k
Ω
6. Thermal
characteristics
Table 7.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
R
th(j-a)
thermal resistance from
in free air
junction to ambient
[1]
SOT363
SOT666
–
–
–
–
625
625
K/W
K/W
[1][2]
Per device
R
th(j-a)
thermal resistance from
in free air
junction to ambient
[1]
SOT363
SOT666
–
–
–
–
416
416
K/W
K/W
[1][2]
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow
soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
I
CBO
collector-base cut-off
V
CB
= 50 V; I
E
= 0 A
current
–
–
100
nA
I
CEO
collector-emitter
cut-off current
V
CE
= 30 V; I
B
= 0 A
–
–
–
–
1
μ
A
μ
A
V
CE
= 30 V; I
B
= 0 A;
50
T
j
= 150
°
C
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A
–
–
110
μ
A
h
FE
DC current gain
V
CE
= 5 V; I
C
= 5 mA
60
–
–
–
–
V
CEsat
collector-emitter
I
C
= 10 mA; I
B
= 0.5 mA
150
mV
saturation voltage
V
I(off)
V
I(on)
R1
off-state input voltage
V
CE
= 5 V; I
C
= 100
μ
A
on-state input voltage
V
CE
= 0.3 V; I
C
= 2 mA
bias resistor 1 (input)
–
1.7
2.7
47
1.2
–
V
4
V
33
0.37
–
61
k
Ω
R2/R1
C
c
bias resistor ratio
0.47
–
0.57
2.5
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
pF
PEMH17_PUMH17_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
4 of 9
PEMH17; PUMH17
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 47 k
Ω
, R2 = 22 k
Ω
006aaa184
006aaa185
3
2
10
10
(2)
(1)
(3)
h
FE
V
CEsat
(mV)
(1)
2
10
(2)
(3)
10
1
10
10
10
−
1
2
−
1
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
V
CE
= 5 V
I
C
/I
B
= 20
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
40
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
40
°
C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa186
006aaa187
2
10
10
V
I(on)
(V)
V
I(off)
(V)
(1)
10
(2)
(1)
(2)
(3)
1
(3)
1
−
1
10
−
1
10
10
10
−
1
2
−
2
−
1
10
1
10
10
1
10
I
(mA)
I (mA)
C
C
V
CE
= 0.3 V
V
CE
= 5 V
(1) T
amb
=
−
40
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
(1) T
amb
=
−
40
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
Fig 3.
On-state input voltage as a function of
collector current; typical values
Fig 4.
Off-state input voltage as a function of
collector current; typical values
PEMH17_PUMH17_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
5 of 9
PEMH17; PUMH17
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 47 k
Ω
, R2 = 22 k
Ω
8. Package
outline
2.2
1.8
1.1
0.8
1.7
1.5
0.6
0.5
0.45
0.15
6
5
4
6
5
4
0.3
0.1
2.2 1.35
2.0 1.15
1.7 1.3
1.5 1.1
pin 1
index
pin 1 index
1
2
3
1
2
3
0.25
0.10
0.3
0.2
0.18
0.08
0.27
0.17
0.65
0.5
1.3
1
Dimensions in mm
06-03-16
Dimensions in mm
04-11-08
Fig 5.
Package outline SOT363 (SC-88)
Fig 6.
Package outline SOT666
9. Packing
information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package Description
Packing quantity
3000 4000 8000 10000
PEMH17
SOT666 2
mm pitch, 8 mm tape and reel
–
–
-315
–
4 mm pitch, 8 mm tape and reel
SOT363 4
mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
–
-115
–
–
–
–
[2]
[3]
PUMH17
-115
-125
–
–
-135
-165
[1] For
further information and the availability of packing methods, see
Section 12
.
[2] T1:
normal taping
[3] T2:
reverse taping
PEMH17_PUMH17_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
6 of 9
PEMH17; PUMH17
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 47 k
Ω
, R2 = 22 k
Ω
10. Revision history
Table 10.
Revision history
Document ID
Release date
20091115
Data sheet status
Change notice
Supersedes
PEMH17_PUMH17_3
Modifications:
Product data sheet
–
PEMH17_PUMH17_2
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 5 “Package outline SOT363 (SC-88)”
: updated
PEMH17_PUMH17_2
PUMH17_1
20050503
Product data sheet
–
PUMH17_1
–
20031009
Product specification
–
PEMH17_PUMH17_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
7 of 9
PEMH17; PUMH17
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 47 k
Ω
, R2 = 22 k
Ω
11. Legal
information
11.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
PEMH17_PUMH17_3
© NXP B.
V
. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
8 of 9
PEMH17; PUMH17
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 47 k
Ω
, R2 = 22 k
Ω
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
6
Packing information
. . . . . . . . . . . . . . . . . . . . .
6
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
7
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
8
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
11.1
11.2
11.3
11.4
12
13
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . . .
8
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2009.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 November 2009
Document identifier: PEMH17_PUMH17_3
