NH-NPB4N65F
| Part # | NH-NPB4N65F |
Download  | NH-NPB4N65F |
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB4N65F
650V N-Channel Enhancement Mode Power MOSFET
650
Volts
4.0
AmpeES
VOLTAGE:
FEATURES
TO-220F
Marking and Polarity
CURRENT
：
Low RDS(ON)
·
·
·
·
Ultra Low Gate Charge
RoHS Compliant
FFYWW
LLWWF
100% UIS and RG Tested
NPB4N65F
TYPICAL APPLICATIONS
Adapter,PC,PD,Charger
·
Switched mode power supplies(SMPS)
·
Uninterruptible Power Supply
（
UPS
）
·
G
D
S
PRODUCT SUMMARY
Remark:
650
4.0
2.3
V
A
Ω
①
.
②
.
NH=niuhang trademark;
ID
FF=Product line code,According to actual changes
RDS(ON) ,Typ.@10V
Y
W
W
=
Data code,According to actual changes
LL
W
W
F
=Inernal code,According to actual changes
NPB4N65F=Modle.
③
.
Absolute Maximum Ratings (Ratings at 25
℃
ambient temperature unless otherwise specified )
Test Conditions
Symbol
Ratings
Parameter
Unit
V
V
DS
650
Drain-Source Voltage
Gate-Source Voltage
V
GS
±
30
4.0
V
Ta=
Ta=
25
℃
I
D
Continuous Drain Current (Note 1)
A
100
℃
I
DM
16
33
13
0.26
to
Drain Current-Pulsed
(Note 1)
℃
A
Ta=
Ta=
Maximum Power Dissipation
Power Dissipation Derating Factor above 25
℃
Derating Factor
25
P
D
W
100
℃
D
F
T
J
W/
℃
℃
-55
-55
150
150
Junction Temperature
T
STD
I
AS
Storage temperature range
to
℃
L=
mH
5
Avalanche Current,Single pulse
Single Pulse Avalanche Energy
10
A
L=10mH,IAS=5A, VDD=15V,
E
AS
125
mJ
RG=25Ω, Starting TJ =25
℃
Thermal Characteristcs (Ratings at 25
℃
ambient temperature unless otherwise specified )
Parameter
Symbol
Max
62.5
3.79
Unit
℃
/W
℃
/W
Thermal Resistance Junction to Ambient
Thermal Resistance Junction-Case
R
θJA
R
θJC
Notes:
1. Repetitive
Rating : Pulse width limited by maximum junction temperature
The value of R
θJA
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.
The value in any given application depends on the user’s specific board design.This transistor is sensitive to electrostatic discharge and
2
Data:2014/10/20
Rev.:A/1
Page: 1 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB4N65F
650V N-Channel Enhancement Mode Power MOSFET
Electrical Characteristcs (Ratings at 25
℃
ambient temperature unless otherwise specified )
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static off Characteristics
BV
DSS
I
DSS
VGS=0V,ID=250uA
VDS=650V,VGS=0V
VGS=±30V,VDS=0V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
Static on Characteristics
650
–
–
–
–
V
–
–
10
uA
nA
I
GSS
±
100
V
GS(TH)
R
DS(ON)
VGS=VDS,ID=250uA
VGS=10V,ID=2A
Gate Threshold Voltage
2
–
3
4
V
Drain-Source On Resistance
Dynamic Characteristics
2.30
2.70
Ω
C
iss
C
oss
C
rss
Input Capacitance
–
–
–
600
50
3
–
–
–
pF
pF
pF
VDS=25V,VGS=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Paramters
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
–
–
–
–
12
18
30
10
14
5.5
3.8
–
–
–
–
–
–
–
ns
ns
ns
VDS=325V,ID=4A,
VGS=10V,RG=25Ω
ns
Q
g
nC
VDS=520V,ID=4A,
VGS=10V
Q
gs
Q
gd
nC
nc
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Max. Diode Forward Cuurent
Max. Pulsed Forward Cuurent
Diode Forward Voltage
–
–
–
–
–
–
–
4
16
1.4
380
–
A
A
VGS=0V,IS=4A
0.79
250
2
V
Reverse Recovery Time
Reverse Recovery Charge
ns
μC
VR=400V,IF=4A,
di/dt=100A/us
Q
rr
Data:2014/10/20
Rev.:A/1
Page:
2
of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB4N65F
650V N-Channel Enhancement Mode Power MOSFET
Typical Characteristics Curves
12.00
9.00
6.00
3.00
0.00
10
250us Pluse Test
Tc=25
℃
1
1.250us Pluse Test
Tc=25
℃
.
2.Vds=40V
0.1
0
5
10
15
20
25
30
2
4
6
8
10
VGS=4.5V
VGS=8V
VGS=5V
VGS=10V
25℃
150℃
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage(V)
Fig.1-Output Characteritsics
Fig.2- Transfer Characteritsics
3
3
2
1
0
Tj=25
℃
2.5
2
Pluse
Duration=10us
Duty cycle=0.5%
Max.
1.5
1
0
2
4
6
8
10
2
4
6
8
10
VGS=10V
IDS-Drain-to–Source Current(A)
Fig.3- On Resistance vs. Drain Current
VGS-Gate-to-Source Voltage(V)
Fig.4- On Resistance vs. Gate Source Voltage
2.8
2.4
2
1.2
1.1
1
0.9
0.8
1.6
1.2
-50
0
50
100
150
0
25
50
75 100 125 150
ID=250uA
VGS=10V,ID=4A
TJ,Junction Temperature(
℃
)
Fig.5-On Resistance vs. Junction Temperature
TJ-Junction Temperature(
℃
)
Fig.6- Breakdown Voltage vs. Junction Temperature
Data:2014/10/20
Rev.:A/1
Page: 3 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB4N65F
650V N-Channel Enhancement Mode Power MOSFET
Typical Characteristics Curves
5
4
3
2
1
0
40
30
20
10
0
250us Pluse Test
Tc=25
℃
0
25
50
75
100 125 150
0
25
50
75
100
125
150
TC-Case Temperature(
℃
)
TC-Case Temperature(
℃
)
Fig.7-Maximum Continuous Drain Current vs. Case Temperature
Fig.8-Maximum Power Dissipation vs. Case Temperature
10
8
10
6
1
4
2
0.1
0
0.4
0.8
1.2
0
0
5
10
15
VDS=20V,ID=20A,VGS=10V
Tj=125℃
Tj=25℃
VSD-Source-to-Drain Voltage(mV)
QG(nC)
Fig.9- Source-Drain Diode Forward Voltage
Fig.10-Gate Charge Waveform
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS
AREA MAY BE LIMITED
BY RDS(ON) TJ=MAX
0.10
RATED TC=25
℃
Single
0.01
1
1
10
100
1000
1us
10us
10ms
100us
DC
0.1
0.1
1
10
100
1ms
Coss=Cds+Cgd
Ciss=Cgs+Cgd
Crss=Cgd
VDS-Drain-Source Voltage(V)
Fig.11- Gate-Source Voltage-VGS(V)
VDS-Drain-Source Voltage(V)
Fig.12-Maximum Safe Operating Area(SOA)
Data:2014/10/20
Rev.:A/1
Page: 4 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB4N65F
650V N-Channel Enhancement Mode Power MOSFET
Typical Characteristics Curves
10
1
0.1
T
J,PK
=T
C
+P
DM
*Z
TH-JC
*R
TH-JC
R
TH-JC
=2.1
℃
/W
T
C
=25
℃
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
D=0.68
D=0.54
D=0.38
D=0.05
D=0.02
D=0.01
Single Pulse
t,Pulse Width(Sec.)
Fig.13- Normalized Transient Thermal Impedance vs.Pulse Width
Data:2014/10/20
Rev.:A/1
Page: 5 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB4N65F
650V N-Channel Enhancement Mode Power MOSFET
Test Circuit & Waveform
Fig.12-Gate Charge Test Circuit & Waveform
Fig.13- Resistive Switching Test Circuit & Waveform
Fig.14- EAS Test Circuit & Waveform
Data:2014/10/20
Rev.:A/1
Page: 6 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB4N65F
650V N-Channel Enhancement Mode Power MOSFET
OUTLINE DRAWINGS
TO-220F
OUTLINE DIMENSIONS
Milimeters
Dim.
Inches
Min.
10.00
15.40
6.48
4.50
2.35
12.50
2.40
0.40
2.20
2.40
0.80
1.20
0.60
3.10
3.00
Typ.
Max.
10.50
16.20
6.88
4.90
2.75
–
Min.
0.39
0.61
0.26
0.18
0.09
0.49
0.09
0.02
0.09
0.09
0.03
0.05
0.02
0.12
0.12
Typ.
Max.
0.41
0.64
0.27
0.19
0.11
–
A
B
C
D
E
F
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
G
H
J
3.00
0.60
4.20
2.70
1.10
1.50
1.00
3.70
4.00
0.12
0.02
0.17
0.11
0.04
0.06
0.04
0.15
0.16
M
N
K
R
O
P
PACKING INFORMATION
TO-220F
Package
Method
Inner Box Size
L×W×H(mm)
Quantity
(pcs/box)
Carton Size
L×W×H(mm)
Quantity
(box/carton)
Box Package
570×153×47
1000
580×250×180
5000
Data:2014/10/20
Rev.:A/1
Page: 7 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB4N65F
650V N-Channel Enhancement Mode Power MOSFET
Recommended wave soldering condition
Product
Peak Temperature
260 +0/-5 °C
Soldering Time
Pb-free devices
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
3°C/second max.
Pb-free Assembly
3°C/second max.
Average ramp-up rate
(Tsmax to Tp)
Preheat
−
T
e
mperature Min(TS min)
−
T
e
mperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−
T
e
mperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
Data:2014/10/20
Rev.:A/1
Page: 8 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB4N65F
650V N-Channel Enhancement Mode Power MOSFET
Disclaimer
Reproducing and modifying informatiom of the document is prohibited without permission
from niuhang Electronics co., LTD
●
●
●
●
●
Niuhang Electronics co., LTD. reserves the rights to make changes of the content herein
the document anytime without notification.
Niuhang Electronics co., LTD. disclaims any and all liability arising out of the application or
use of any product including damages incidentally and consequentially occurred.
Niuhang Electronics co., LTD. does not assume any and all implied warranties,
including warranties of fitness for particular purpose,non-infringement and merchantability.
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Niuhang Electronics co., LTD.makes no representation or warranty that such applications will
be suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving or
life-sustaining,such as medical instruments.transportation equipment,aerospae machinery
et cetera.Customers usin or selling these products for use in such applications do so at their
own rish and agree to fully indemnify Niuhang Electronics co., LTD.for any damages resulting
resulting from such improper use or sale.
●
●
When the appearance of the product and chip size does not change, in order to product
the customer.
quality, change the internal structure and the production process Niuhang can not notify
Data:2014/10/20
Rev.:A/1
Page: 9 of 9
