NH-NPB7N65F
| Part # | NH-NPB7N65F |
Download  | NH-NPB7N65F |
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB7N65F
650V N-channel Enhancement MOSFET
650 Volts
Ampers
VOLTAGE
CURRENT
TO-220F
Marking and Polarity
7
FEATURES
Low RDS(ON)
2
·
·
·
·
Ultra Low Gate Charge
RoHS Compliant
FFYWW
LLWWF
100% UIS and RG Tested
1
NPB7N65F
TYPICAL APPLICATIONS
Adapter,PC,PD,Charger
·
·
Switched mode power supplies(SMPS)
·
3
Uninterruptible Power Supply
（
UPS
）
PRODUCT SUMMARY
1
2
3
B
VDSS
,Min. at Max. Tj
650
7
V
A
Remark:
I
D
①
.
②
.
NH=niuhang trademark;
R
DS(ON)
,Max. at Vgs=10V
Qg,Typ.
1.20
28.0
Ω
FF=Product line code,According to actual changes
Y
W
W
=
Data code,According to actual changes
LL
W
W
F
=Inernal code,According to actual changes
NPS7N65F=Modle.
nC
③
.
Absolute Maximum Ratings
(Ratings at 25
℃
ambient temperature unless otherwise specified )
Parameter
Symbol
V
DS
V
GS
I
D
Ratings
Unit
V
650
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Drain Current-Pulsed
Total Dissipation
±30
V
7
28
A
Ta=25
℃
I
DM
(Note 1)
A
P
D
48
W
℃
℃
mJ
T
J
-55 to +150
-55 to +150
350
Junction Temperature
Storage temperature range
Single Pulse Avalanche Energy
T
STD
E
AS
(Note 2)
Thermal Characteristcs
(Ratings at 25
℃
ambient temperature unless otherwise specified )
Parameter
Symbol
Max
80.0
3.5
Unit
℃
/W
℃
/W
Thermal Resistance Junction to Ambient
Thermal Resistance Junction-Case
R
θJA
R
θJC
(Note 3)
Notes:
Repetitive Rating : Pulse width limited by maximum junction temperature
1.
2.
L=10mH,IAS=10A, VDD=50V, RG=25Ω, Starting TJ =25
℃
3. The
value of R
θJA
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.
The value in any given application depends on the user’s specific board design.This transistor is sensitive to electrostatic discharge and
should be handled with care.
Data:2014/10/20
Rev.:A/1
Page: 1 of 8
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB7N65F
650V N-channel Enhancement MOSFET
Electrical Characteristcs
(Ratings at 25
℃
ambient temperature unless otherwise specified )
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static off Characteristics
BV
DSS
VGS=0V,ID=250uA
VDS=650V,VGS=0V
VGS=±30V,VDS=0V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
Static on Characteristics
650
–
–
–
–
1
V
I
DSS
–
–
uA
nA
I
GSS
±100
V
GS(TH)
VGS=VDS,ID=250uA
VGS=10V,ID=3.5A
Gate Threshold Voltage
2.0
–
3.0
4.0
V
R
DS(ON)
Drain-Source On Resistance
Dynamic Characteristics
1.20
1.38
Ω
C
iss
C
oss
C
rss
Input Capacitance
–
–
–
1150
90
–
–
–
pF
pF
pF
VDS=25V,VGS=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Paramters
6.0
t
d(on)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
Gate Resistance
–
–
–
–
–
–
–
–
18
25
42
20
2.5
28
5
–
–
–
–
–
–
–
–
ns
ns
ns
ns
Ω
t
r
VDS=325V,ID=7A,
VGS=10V,RG=25Ω
t
d(off)
t
f
R
g
VDS=0V,VGS=0V,f=1.0MHz
VDS=520V,ID=7A,VGS=10V
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
nC
nC
nc
Q
gs
Q
gd
12
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Max. Diode Forward Cuurent
Max. Pulsed Forward Cuurent
Diode Forward Voltage
–
–
–
–
–
–
–
7
28
1.5
–
A
A
VGS=0V,IS=7A
0.85
385
3
V
Reverse Recovery Time
Reverse Recovery Charge
ns
μC
VR=400V,IF=7A,di/dt=100A/us
Q
rr
–
Data:2014/10/20
Rev.:A/1
Page:
2
of 8
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB7N65F
650V N-channel Enhancement MOSFET
Typical Characteristics Curves
20
10
0
20
10
0
250us Pluse Test
Tc=25
℃
1.250us Pluse Test
2.Vds=20V
0
10
20
30
2
4
6
8
10
VGS=4.5V
VGS=8V
对数
(VGS=8V)
VGS=5V
VGS=10V
对数
(VGS=8V)
25℃
150℃
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage(V)
Fig.1-Output Characteritsics
Fig.2- Transfer Characteritsics
2
4
3
2
1
0
Pluse Duration=10us
Duty cycle=0.5% Max.
Tj=25
℃
Tj=25
℃
1.8
1.6
1.4
1.2
1
0
2
4
6
8
10 12
2
4
6
8
10
VGS=10V
ID=3.5A
IDS-Drain-to–Source Current(A)
Fig.3- On Resistance vs. Drain Current
VGS-Gate-to-Source Voltage(V)
Fig.4- On Resistance vs. Gate Source Voltage
2.5
1.5
0.5
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
-50 -25
0
25 50 75 100
125 150
VGS=10V,ID=3.5A
VGS=0V,ID=250uA
TJ,Junction Temperature(
℃
)
Fig.5-On Resistance vs. Junction Temperature
TJ-Junction Temperature(
℃
)
Fig.6- Breakdown Voltage vs. Junction Temperature
Data:2014/10/20
Rev.:A/1
Page: 3 of 8
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB7N65F
650V N-channel Enhancement MOSFET
Typical Characteristics Curves
10
8
10
6
1
4
2
0
0.1
0
5
10
15
20
25
30
400
600
800
1000
Tj=25℃
Tj=125℃
VDS=520V,ID=7A,VGS=10V
VSD-Source-to-Drain Voltage(mV)
QG(nC)
Fig.7- Source-Drain Diode Forward Voltage
Fig.8-Gate Charge Waveform
10000
1000
100
10
100.000
10.000
1.000
OPERATION IN THIS AREA
MAY BE LIMITED BY
RDS(ON) TJ=MAX RATED
0.100
TC=25
℃
Single Pulse
VGS=0V
f=1MHZ
1
0.010
0.1
1
10
100
10ms
1000
0.1
0.1
1
10
100
Ciss=Cgs+Cgd
Crss=Cgd
Coss=Cds+Cgd
10us
100us
1ms
DC
VDS-Drain-Source Voltage(V)
VDS-Drain-Source Voltage(V)
Fig.9- Gate-Source Voltage-VGS(V)
Fig.10-Maximum Safe Operating Area(SOA)
10
1
0.1
T
J,PK
=T
C
+P
DM
*Z
TH-JC
*R
TH-JC
R
TH-JC
=4.5
℃
/W
0.01
T
C
=25
℃
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
D=0.68
D=0.54
D=0.38
D=0.05
D=0.02
D=0.01
Single Pulse
t,Pulse Width(Sec.)
Fig.11- Normalized Transient Thermal Impedance vs.Pulse Width
Data:2014/10/20
Rev.:A/1
Page:
4
of 8
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB7N65F
650V N-channel Enhancement MOSFET
Test Circuit & Waveform
Fig.12-Gate Charge Test Circuit & Waveform
Fig.13- Resistive Switching Test Circuit & Waveform
Fig.14- EAS Test Circuit & Waveform
Data:2014/10/20
Rev.:A/1
Page: 5 of 8
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB7N65F
650V N-channel Enhancement MOSFET
OUTLINE DRAWINGS
TO-220F
OUTLINE DIMENSIONS
Milimeters
Inches
Dim.
Min.
10.00
15.40
6.48
4.50
2.35
12.50
2.40
0.40
2.20
2.40
0.80
1.20
0.60
3.10
3.00
Typ.
Max.
10.50
16.20
6.88
4.90
2.75
–
Min.
0.39
0.61
0.26
0.18
0.09
0.49
0.09
0.02
0.09
0.09
0.03
0.05
0.02
0.12
0.12
Typ.
Max.
0.41
0.64
0.27
0.19
0.11
–
A
B
C
D
E
F
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
G
H
J
3.00
0.60
4.20
2.70
1.10
1.50
1.00
3.70
4.00
0.12
0.02
0.17
0.11
0.04
0.06
0.04
0.15
0.16
M
N
K
R
O
P
PACKING INFORMATION
TO-220F
Package
Method
Inner Box Size
L×W×H(mm)
Quantity
(pcs/box)
Carton Size
L×W×H(mm)
Quantity
(box/carton)
Box Package
570×153×47
1000
580×250×180
5000
Data:2014/10/20
Rev.:A/1
Page: 6 of 8
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB7N65F
650V N-channel Enhancement MOSFET
Recommended wave soldering condition
Product
Peak Temperature
260 +0/-5 °C
Soldering Time
Pb-free devices
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
3°C/second max.
Pb-free Assembly
3°C/second max.
Average ramp-up rate
(Tsmax to Tp)
Preheat
−
T
e
mperature Min(TS min)
−
T
e
mperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−
T
e
mperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
Data:2014/10/20
Rev.:A/1
Page: 7 of 8
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPB7N65F
650V N-channel Enhancement MOSFET
Disclaimer
Reproducing and modifying informatiom of the document is prohibited without permission
from niuhang Electronics co., LTD
●
●
●
●
●
Niuhang Electronics co., LTD. reserves the rights to make changes of the content herein
the document anytime without notification.
Niuhang Electronics co., LTD. disclaims any and all liability arising out of the application or
use of any product including damages incidentally and consequentially occurred.
Niuhang Electronics co., LTD. does not assume any and all implied warranties,
including warranties of fitness for particular purpose,non-infringement and merchantability.
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Niuhang Electronics co., LTD.makes no representation or warranty that such applications will
be suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving or
life-sustaining,such as medical instruments.transportation equipment,aerospae machinery
et cetera.Customers usin or selling these products for use in such applications do so at their
own rish and agree to fully indemnify Niuhang Electronics co., LTD.for any damages resulting
resulting from such improper use or sale.
●
●
When the appearance of the product and chip size does not change, in order to product
the customer.
quality, change the internal structure and the production process Niuhang can not notify
Data:2014/10/20
Rev.:A/1
Page: 8 of 8
