NH-NPS13N50F
| Part # | NH-NPS13N50F |
Download  | NH-NPS13N50F |
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPS13N50F
500V N-Channel Enhancement Mode Power MOSFET
500
Volts
13
Amperes
VOLTAGE:
FEATURES
TO-220F
Marking and Polarity
CURRENT
：
Low RDS(ON)
·
·
·
·
Ultra Low Gate Charge
RoHS Compliant
FFYWW
LLWWF
100% UIS and RG Tested
NPS13N50F
TYPICAL APPLICATIONS
Adapter,PC,PD,Charger,LED Driver
Switched mode power supplies(SMPS)
Uninterruptible Power Supply
（
UPS
）
·
·
·
G
D
S
Remark:
NH=niuhang trademark;
①
.
②
.
FF=Product line code,According to actual changes
Y
W
W
=
Data code,According to actual changes
LL
W
W
F
=Inernal code,According to actual changes
NPS13N50F=Modle.
PRODUCT SUMMARY
500
13
V
A
Ω
ID
RDS(ON) ,Typ.@10V
0.385
③
.
Absolute Maximum Ratings (Ratings at 25
℃
ambient temperature unless otherwise specified )
Test Conditions
Symbol
V
DS
Ratings
500
±30
13
Unit
V
Parameter
Drain-Source Voltage
Gate-Source Voltage
V
GS
V
Ta=
25
℃
℃
℃
℃
℃
Continuous Drain Current (Note 1)
I
D
A
A
8.3
Ta= 100
52
T
J
<
I
DM
P
D
Drain Current-Pulsed
(Note 1)
150
25
42
Maximum Power Dissipation
Power Dissipation Derating Factor above 25
℃
Derating Factor
Ta=
W
17
Ta= 100
0.33
to
D
F
T
J
W/
℃
℃
-55
-55
150
150
Junction Temperature
to
T
STD
I
AS
Storage temperature range
Avalanche Current,Single pulse
℃
mH
13
L=
L=
10
10
A
mH,VDD=15V
A,RG=25Ω
Single Pulse Avalanche Energy
845
E
AS
IAS= 13
mJ
Starting TJ =25
℃
Thermal Characteristcs (Ratings at 25
℃
ambient temperature unless otherwise specified )
Test Conditions
Symbol
Typ.
Unit
Parameter
1.still air environment
with TA =25° C.
62.5
R
θJA
Thermal Resistance Junction to Ambient(Note 2)
℃
/W
2.device mounted on
1 in
2
FR-4 board with 2oz
3
R
θJC
Thermal Resistance Junction-Case(Note 2)
Notes:
Data:2023/9/18
Rev.:A/1
Page: 1 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPS13N50F
500V N-Channel Enhancement Mode Power MOSFET
Electrical Characteristcs (Ratings at 25
℃
ambient temperature unless otherwise specified )
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Parameter
Static off Characteristics
BV
DSS
V
VGS=0V,ID=250uA
500
–
0.6
–
–
–
Drain-Source Breakdown Voltage
Bvdss Temperature Coefficient
ΔBV
DSS
/ΔT
J
–
–
–
–
V/
℃
ID=250uA,Reference 25
℃
1
V,VGS=0V,Ta = 25
℃
V,VGS=0V,Ta = 125
℃
V,VDS=0V
VDS= 500
VDS= 400
VGS= ±30
I
DSS
Drain-Source Leakage Current
uA
nA
–
100
±100
I
GSS
–
Gate-Body Leakage Current
Static on Characteristics
V
GS(TH)
V
ID=250uA
2.0
–
3.0
4.0
0.5
Gate Threshold Voltage
VGS= VDS
ID= 6.5
R
DS(ON)
Ω
Drain-Source On Resistance
Dynamic Characteristics
A,VGS=10V
0.385
C
iss
C
oss
C
rss
pF
pF
pF
V
–
–
–
1960
190
10
–
–
–
Input Capacitance
VDS= 25
V
Output Capacitance
VGS=
F=
0
1
MHZ
Reverse Transfer Capacitance
Switching Paramters
t
d(on)
ns
ns
ns
ns
nC
nC
nC
V
A
Ω
–
–
–
–
–
–
–
30
20
60
30
40
9
–
–
–
–
–
–
–
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS= 250
ID= 13
t
r
t
d(off)
RG= 10
t
f
Q
g
V
A
V
VDS= 400
ID= 13
Q
gs
Q
gd
13
VGS= 10
Drain-Source Diode Characteristics and Maximum Ratings
Max. Diode Forward Cuurent
I
S
I
SM
V
SD
t
rr
A
A
–
–
–
–
–
–
–
13
52
1.5
–
Max. Pulsed Forward Cuurent
V
A,VGS=0V
A,VGS=0V
A/us
0.9
550
5
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ID= 13
ID= 13
ns
μC
Q
rr
–
di/dt= 100
Data:2023/9/18
Rev.:A/1
Page: 2 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPS13N50F
500V N-Channel Enhancement Mode Power MOSFET
Typical Characteristics Curves
40
35
30
25
20
15
10
5
14
12
10
8
250us Pluse Test
Tc=25
℃
6
4
2
0
0
0
5
10
15
20
25
2
4
6
8
10
VGS=4.0V
VGS=6V
VGS=4.5V
VGS=10V
VGS=5V
25℃
125℃
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage(V)
Fig.1-Output Characteritsics
Fig.2- Transfer Characteritsics
5
4
3
2
1
0
1
Pluse Duration=10us
Duty cycle=0.5%
Max.
0.8
0.6
0.4
0.2
0
0 2 4 6 8 1
0
1
2
1
4
1
6
1
8
2
0
VGS=10V
2
4
6
8 10 12 14 16
ID= 6.5 A
IDS-Drain-to–Source Current(A)
VGS-Gate-to-Source Voltage(V)
Fig.4- On Resistance vs. Gate Source Voltage
Fig.3- On Resistance vs. Drain Current
3
2.5
2
1.20
1.10
1.00
0.90
0.80
Pluse
Duration=10us
Duty cycle=0.5%
1.5
1
250us Pluse Test
Tc=25
℃
0.5
0
-50
0
50
100
150
-50 -25
0 25 50 75
100 125 150
VGS=0V,ID=250uA
VGS=10V,ID= 6.5 A
TJ,Junction Temperature(
℃
)
TJ-Junction Temperature(
℃
)
Fig.6- Breakdown Voltage vs. Junction Temperature
Fig.5-On Resistance vs. Junction Temperature
Data:2023/9/18
Rev.:A/1
Page: 3 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPS13N50F
500V N-Channel Enhancement Mode Power MOSFET
Typical Characteristics Curves
14
13
12
11
10
9
50
40
30
20
10
0
8
7
6
5
4
250us Pluse Test
Tc=25
℃
3
2
0
25
50
75
100 125 150
1
0
0
25
50
75
100
125
150
TC-Case Temperature(
℃
)
TC-Case Temperature(
℃
)
Fig.7-Maximum Continuous Drain Current vs. Case Temperature
Fig.8-Maximum Power Dissipation vs. Case Temperature
10
8
100
10
1
6
4
2
0
0.1
0
5
10 15 20 25 30 35 40
400 500 600 700 800 900
1000
Tj=25℃
Tj=125℃
VDS= 400 V,ID= 13 A,VGS= 10 V
VSD-Source-to-Drain Voltage(mV)
QG(nC)
Fig.9- Source-Drain Diode Forward Voltage
Fig.10-Gate Charge Waveform
100.00
10.00
1.00
10000
1000
100
10
OPERATION IN THIS
AREA MAY BE LIMITED
BY RDS(ON) TJ=MAX
0.10
RATED TC=25
℃
Single
0.01
1
1
10
100
1000
1us
10us
10ms
100us
DC
0.1
0.1
1
10
100
1ms
Coss=Cds+Cgd
Ciss=Cgs+Cgd
Crss=Cgd
VDS-Drain-Source Voltage(V)
Fig.11- Gate-Source Voltage-VGS(V)
VDS-Drain-Source Voltage(V)
Fig.12-Maximum Safe Operating Area(SOA)
Data:2023/9/18
Rev.:A/1
Page: 4 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPS13N50F
500V N-Channel Enhancement Mode Power MOSFET
Typical Characteristics Curves
10
1
0.1
T
J,PK
=T
C
+P
DM
*Z
TH-JC
*R
TH-JC
R
TH-JC
=2.1
℃
/W
T
C
=25
℃
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
D=0.68
D=0.54
D=0.38
D=0.05
D=0.02
D=0.01
Single Pulse
t,Pulse Width(Sec.)
Fig.13- Normalized Transient Thermal Impedance vs.Pulse Width
Test Circuit & Waveform
Fig.14- Resistive Switching Test Circuit & Waveform
Data:2023/9/18
Rev.:A/1
Page: 5 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPS13N50F
500V N-Channel Enhancement Mode Power MOSFET
Test Circuit & Waveform
Fig.15-Gate Charge Test Circuit & Waveform
Fig.16- EAS Test Circuit & Waveform
Fig.16- Diode Recovery Test Circuit & Waveform
Data:2023/9/18
Rev.:A/1
Page: 6 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPS13N50F
500V N-Channel Enhancement Mode Power MOSFET
OUTLINE DRAWINGS
TO-220F
OUTLINE DIMENSIONS
Milimeters
Dim.
Inches
Min.
10.00
15.40
6.48
4.50
2.35
12.50
2.40
0.40
2.20
2.40
0.80
1.20
0.60
3.10
3.00
Typ.
Max.
10.50
16.20
6.88
4.90
2.75
–
Min.
0.39
0.61
0.26
0.18
0.09
0.49
0.09
0.02
0.09
0.09
0.03
0.05
0.02
0.12
0.12
Typ.
Max.
0.41
0.64
0.27
0.19
0.11
–
A
B
C
D
E
F
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
G
H
J
3.00
0.60
4.20
2.70
1.10
1.50
1.00
3.70
4.00
0.12
0.02
0.17
0.11
0.04
0.06
0.04
0.15
0.16
M
N
K
R
O
P
PACKING INFORMATION
Package
Code
Package
Method
Tube Size
L×W×H(mm)
Quantity
(pcs/Tube)
Inner Box Size
L×W×H(mm)
Quantity
(pcs/Inner Box)
Outer Carton Size
L×W×H(mm)
Quantity
(pcs/carton)
TO-220F
Tube
530x35x8
50
560x155x55
1000
570×284×185
5000
Data:2023/9/18
Rev.:A/1
Page: 7 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPS13N50F
500V N-Channel Enhancement Mode Power MOSFET
Recommended wave soldering condition
Product
Peak Temperature
260 +0/-5 °C
Soldering Time
Pb-free devices
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
3°C/second max.
Pb-free Assembly
3°C/second max.
Average ramp-up rate
(Tsmax to Tp)
Preheat
−
T
e
mperature Min(TS min)
−
T
e
mperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−
T
e
mperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
Data:2023/9/18
Rev.:A/1
Page: 8 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NPS13N50F
500V N-Channel Enhancement Mode Power MOSFET
Disclaimer
Reproducing and modifying informatiom of the document is prohibited without permission
from niuhang Electronics co., LTD
●
●
●
●
●
Niuhang Electronics co., LTD. reserves the rights to make changes of the content herein
the document anytime without notification.
Niuhang Electronics co., LTD. disclaims any and all liability arising out of the application or
use of any product including damages incidentally and consequentially occurred.
Niuhang Electronics co., LTD. does not assume any and all implied warranties,
including warranties of fitness for particular purpose,non-infringement and merchantability.
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Niuhang Electronics co., LTD.makes no representation or warranty that such applications will
be suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving or
life-sustaining,such as medical instruments.transportation equipment,aerospae machinery
et cetera.Customers usin or selling these products for use in such applications do so at their
own rish and agree to fully indemnify Niuhang Electronics co., LTD.for any damages resulting
resulting from such improper use or sale.
●
●
When the appearance of the product and chip size does not change, in order to product
the customer.
quality, change the internal structure and the production process Niuhang can not notify
Data:2023/9/18
Rev.:A/1
Page: 9 of 9
