NH-NSS085N100P5
| Part # | NH-NSS085N100P5 |
Download  | NH-NSS085N100P5 |
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NSS085N100P5
N-channel 100V Enhancement Mode Power MOSFET
100
Volts
100
Ampers
VOLTAGE:
FEATURES
PDFN5*6
Marking and Polarity
CURRENT
：
Advanced trench MOSFET technology
Low RDS(ON)
·
·
·
·
·
·
FFY
W
W
LLWWK
Ultra Low Gate Charge
RoHS Compliant
NSS085N100
100% UIS and RG Tested
High Power and current handing capability
P5
TYPICAL APPLICATIONS
PD Charger V-BUS
·
SMPS 2nd Synchronous Rectifier
·
MB/VGA Vcore
·
BLDC Motor driver
·
POL application
·
Remark:
PRODUCT SUMMARY
NH=niuhang trademark;
①
.
②
.
B
VDSS
,Min. at Max. Tj
100
100
7.5
43
V
A
FF=Product line code,According to actual changes
Y
W
W
=
Data code,According to actual changes
LL
W
W
F
=Inernal code,According to actual changes
NSS085N100P5=Modle.
I
D
R
DS(ON)
,Max. at Vgs=10V
Qg,Typ.
mΩ
nC
③
.
Absolute Maximum Ratings (Ratings at 25
℃
ambient temperature unless otherwise specified )
Test Conditions
Symbol
V
DS
Ratings
100
Parameter
Unit
Drain-Source Voltage
V
V
GS
±20
Gate-Source Voltage
V
100
Ta=25
℃
I
D
Continuous Drain Current (Note 1)
A
64
Ta=100
℃
I
DM
P
D
300
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Power Dissipation Derating Factor above 25
℃
Derating Factor
A
150
Ta=25
℃
W
60
Ta=100
℃
D
F
T
J
1.20
W/
℃
℃
-55
-55
to
to
150
150
Junction Temperature
T
STD
I
AS
Storage temperature range
Avalanche Current,Single pulse
℃
L=
mH
38
0.5
A
L=0.5mH,IAS=38A, VDD=50V,
E
AS
361
Single Pulse Avalanche Energy
mJ
RG=25Ω, Starting TJ =25
℃
Thermal Characteristcs (Ratings at 25
℃
ambient temperature unless otherwise specified )
Parameter
Symbol
R
θJA
Max
50
Unit
℃
/W
℃
/W
Thermal Resistance Junction to Ambient
Thermal Resistance Junction-Case
R
θJC
0.84
(Note 2)
Notes:
1. Repetitive
Rating : Pulse width limited by maximum junction temperature
The value of R
θJA
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.
The value in any given application depends on the user’s specific board design.This transistor is sensitive to electrostatic discharge and
should be handled with care.
2
Data:2014/10/20
Rev.:A/1
Page: 1 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NSS085N100P5
N-channel 100V Enhancement Mode Power MOSFET
Electrical Characteristcs
(Ratings at 25
℃
ambient temperature unless otherwise specified )
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static off Characteristics
BV
DSS
I
DSS
VGS=0V,ID=250uA
VDS=32V,VGS=0V
VGS=±20V,VDS=0V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
Static on Characteristics
100
–
–
–
–
1
uA
nA
–
–
I
GSS
±100
V
GS(TH)
R
DS(ON)
g
FS
VGS=VDS,ID=250uA
VGS=4.5V,ID=15A
VGS=10V,ID=20A
VDS=5V,ID=10A
V
mΩ
S
Gate Threshold Voltage
1.3
1.7
9.5
–
2.4
11.0
9.5
–
–
–
–
Drain-Source On Resistance
Forward Transconductance
12
Dynamic Characteristics
C
iss
C
oss
C
rss
pF
pF
pF
Input Capacitance
–
–
–
2000
820
80
–
–
–
VDS=35V,VGS=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Paramters
t
d(on)
t
r
t
d(off)
t
f
ns
ns
ns
ns
Ω
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
Gate Resistance
–
–
–
–
–
–
–
–
9
–
–
–
–
–
–
–
–
7
VDS=0V,ID=50A,
VGS=10V,RG=3Ω
50
11
1.0
43
6.5
8.0
R
g
VDS=0V,VGS=0V,f=1.0MHz
VDS=50V,ID=50A,VGS=10V
Q
g
nC
nC
nc
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
SD
A
A
Max. Diode Forward Cuurent
–
–
–
–
–
–
–
100
300
1.2
–
I
SM
Max. Pulsed Forward Cuurent
V
SD
VGS=0V,IS=10A
V
Diode Forward Voltage
0.8
27
113
t
rr
ns
μC
Reverse Recovery Time
IF=20A,di/dt=500A/us
Q
rr
Reverse Recovery Charge
–
Data:2014/10/20
Rev.:A/1
Page: 2 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NSS085N100P5
N-channel 100V Enhancement Mode Power MOSFET
Typical Characteristics Curves
160
140
120
100
80
100
75
50
25
0
250us Pluse Test
60
40
1.250us Pluse Test
2.Vds=20V
20
0
0
10
20
30
40
2
4
6
8
10
VGS=4.5V
VGS=8V
VGS=5V
VGS=10V
25℃
150℃
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage(V)
Fig.1-Output Characteritsics
Fig.2- Transfer Characteritsics
20
18
16
14
12
10
8
100
90
80
70
60
50
40
30
20
10
0
Pluse Duration=10us
Duty cycle=0.5% Max.
Tj=25
℃
Tj=25
℃
0
40
80
120
160
0
2
4
6
8
10
,ID=15A
VGS=4.5
IDS-Drain-to–Source Current(A)
Fig.3- On Resistance vs. Drain Current
VGS-Gate-to-Source Voltage(V)
Fig.4- On Resistance vs. Gate Source Voltage
2.5
1.5
0.5
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
-50 -25
0
25 50 75 100
125 150
VGS=4.5V,ID=15A
VGS=0V,ID=250uA
TJ,Junction Temperature(
℃
)
Fig.5-On Resistance vs. Junction Temperature
TJ-Junction Temperature(
℃
)
Fig.6- Breakdown Voltage vs. Junction Temperature
Data:2014/10/20
Rev.:A/1
Page: 3 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NSS085N100P5
N-channel 100V Enhancement Mode Power MOSFET
Typical Characteristics Curves
150
125
100
75
120
100
80
60
40
20
0
50
25
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
TC-Case Temperature(
℃
)
TC-Case Temperature(
℃
)
Fig.7-Maximum Continuous Drain Current vs. Case Temperature
Fig.8-Maximum Power Dissipation vs. Case Temperature
100
10
10
8
6
1
4
2
0.1
200
400
600
800
1000
0
Tj=25℃
Tj=125℃
0
10
20
30
40
50
VDS=50V,ID=50A,VGS=10V
VSD-Source-to-Drain Voltage(mV)
Fig.9- Source-Drain Diode Forward Voltage
QG(nC)
Fig.10-Gate Charge Waveform
1000
100
10
1
10000
1000
100
10
OPERATION IN THIS
AREA MAY BE LIMITED
BY RDS(ON) TJ=MAX
0
RATED TC=25
℃
Single
1
VGS=0V
0
0.1
0.1
1
10
100
0.1
1
10
100
Coss=Cds+Cgd
Ciss=Cgs+Cgd
Crss=Cgd
10us
10ms
100us
DC
1ms
VDS-Drain-Source Voltage(V)
Fig.11- Gate-Source Voltage-VGS(V)
VDS-Drain-Source Voltage(V)
Fig.12-Maximum Safe Operating Area(SOA)
Data:2014/10/20
Rev.:A/1
Page: 4 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NSS085N100P5
N-channel 100V Enhancement Mode Power MOSFET
Typical Characteristics Curves
10
1
0.1
T
J,PK
=T
C
+P
DM
*Z
TH-JC
*R
TH-JC
R
TH-JC
=4.5
℃
/W
T
C
=25
℃
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
D=0.68
D=0.54
D=0.38
D=0.05
D=0.02
D=0.01
Single Pulse
t,Pulse Width(Sec.)
Fig.13- Normalized Transient Thermal Impedance vs.Pulse Width
Data:2014/10/20
Rev.:A/1
Page: 5 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NSS085N100P5
N-channel 100V Enhancement Mode Power MOSFET
Test Circuit & Waveform
Fig.12-Gate Charge Test Circuit & Waveform
Fig.13- Resistive Switching Test Circuit & Waveform
Fig.14- EAS Test Circuit & Waveform
Data:2014/10/20
Rev.:A/1
Page: 6 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NSS085N100P5
N-channel 100V Enhancement Mode Power MOSFET
OUTLINE DRAWINGS
PDFN5*6
OUTLINE DIMENSIONS
Milimeters
Dim.
Inches
Typ.
Min.
Typ.
4.900
5.750
6.000
1.000
1.270
0.300
–
Max.
Min.
Max.
A
Ｂ
C
D
E
F
4.800
5.000
0.189
0.193
0.226
0.236
0.039
0.050
0.012
–
0.197
5.650
5.850
0.222
0.230
5.900
6.100
0.232
0.240
0.900
1.100
0.035
0.043
–
–
–
–
0.250
0.350
0.010
0.014
G
H
J
–
0.150
–
0.006
0.100
0.130
0.254
R0.1
4.000
3.450
1.350
0.550
0.1
0.160
0.004
0.005
0.010
R0.0039
0.157
0.136
0.053
0.022
0.004
0.006
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
K
L
M
N
P
R
OUTLINE DRAWINGS
PDFN5*6
RECOMMENDED LAYOUT DIMENSIONS
Milimeters
Typ.
Inches
Typ.
Dim.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
–
–
–
–
–
–
–
–
–
–
6.600
4.320
1.270
0.700
2.200
3.300
4.500
1.270
0.600
4.400
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.260
0.170
0.050
0.028
0.087
0.130
0.177
0.050
0.024
0.173
–
–
–
–
–
–
–
–
–
–
G
L
M
N
PACKING INFORMATION
PDFN5*6
Package
Method
Reel Size
(mm)
Quantity
(pcs/reel)
Inner Box Size
L×W×H(mm)
Quantity
(pcs/Inner Box)
Outer Carton Size
L×W×H(mm)
Quantity
(pcs/carton)
Tape Reel
Φ340
5000
340×340×50
10000
360×360×260
50000
Data:2014/10/20
Rev.:A/1
Page: 7 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NSS085N100P5
N-channel 100V Enhancement Mode Power MOSFET
Recommended wave soldering condition
Product
Peak Temperature
260 +0/-5 °C
Soldering Time
Pb-free devices
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
Preheat
−
T
e
mperature Min(TS min)
−
T
e
mperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−
T
e
mperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-40 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
Data:2014/10/20
Rev.:A/1
Page: 8 of 9
Niu Hang
Electronic Co. Ltd
Specification
For Approval
NSS085N100P5
N-channel 100V Enhancement Mode Power MOSFET
Disclaimer
Reproducing and modifying informatiom of the document is prohibited without permission
from niuhang Electronics co., LTD
●
●
Niuhang Electronics co., LTD. reserves the rights to make changes of the content herein
the document anytime without notification.
Niuhang Electronics co., LTD. disclaims any and all liability arising out of the application or
use of any product including damages incidentally and consequentially occurred.
●
Niuhang Electronics co., LTD. does not assume any and all implied warranties,
including warranties of fitness for particular purpose,non-infringement and merchantability.
●
●
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Niuhang Electronics co., LTD.makes no representation or warranty that such applications will
be suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving or
life-sustaining,such as medical instruments.transportation equipment,aerospae machinery
et cetera.Customers usin or selling these products for use in such applications do so at their
own rish and agree to fully indemnify Niuhang Electronics co., LTD.for any damages resulting
resulting from such improper use or sale.
●
●
When the appearance of the product and chip size does not change, in order to product
the customer.
quality, change the internal structure and the production process Niuhang can not notify
Data:2014/10/20
Rev.:A/1
Page: 9 of 9
