NIKO-Semicon-P06P03LCG
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P06P03LCG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
R
DS(ON)
I
D
V
(BR)DSS
45m
Ω
@V
GS
= -10V
-30V
-3.5A
SOT-89
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
V
DS
LIMITS
-30
UNITS
V
V
GS
Gate-Source Voltage
±20
-3.5
-2.8
-20
T
A
= 25 °C
T
A
= 70 °C
I
D
Continuous Drain Current
A
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
I
DM
I
AS
-19
E
AS
L = 0.1mH
T
A
= 25 °C
T
A
= 70 °C
18
mJ
W
0.78
0.5
P
D
Power Dissipation
T
J
, T
STG
Operating Junction & Storage Temperature Range
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
R
q
JC
R
q
JA
Junction-to-Case
18
°C / W
Junction-to-Ambient
160
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
1%.
Ver 1.0
1
2012/4/12
P06P03LCG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
UNIT
MIN
TYP MAX
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= -250
m
A
V
DS
= V
GS
, I
D
= -250
m
A
V
DS
= 0V, V
GS
= ±20V
V
DS
= -24V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V , T
J
= 125 °C
V
DS
= -10V, V
GS
= -10V
V
GS
= -4.5V, I
D
= -3A
V
GS
= -10V, I
D
= -3.5A
V
DS
= -10V, I
D
= -3.5A
DYNAMIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
-30
-1
V
nA
m
A
A
-1.5
-3
±100
-1
I
DSS
I
D(ON)
R
DS(ON)
g
fs
Zero Gate Voltage Drain Current
-10
On-State Drain Current
1
Drain-Source On-State
Resistance
1
-20
56
42
16
75
45
m
Ω
S
Forward Transconductance
1
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
666
163
114
6
V
GS
= 0V, V
DS
= -15V, f = 1MHz
V
GS
= 0V, V
DS
= 0V, f = 1MHz
pF
Ω
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Q
g
13
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -3.5A
Q
gs
Q
gd
t
d(on)
t
r
nC
2.1
2.6
5.7
10
V
DS
= -15V,
nS
Turn-Off Delay Time
2
Fall Time
2
I
D
@
-3.5A, V
GS
= -10V, R
GS
= 6
Ω
t
d(off)
t
f
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
I
S
Continuous Current
Forward Voltage
1
-1
A
V
V
SD
t
rr
I
F
= -1A, V
GS
= 0V
-1.2
Reverse Recovery Time
15.5
7.9
nS
nC
IF = -3.5A, dlF/dt = 100A /
m
S
Q
rr
Reverse Recovery Charge
1
Pulse test : Pulse Width
300
m
sec, Duty Cycle
2
％
.
2
Independent of operating temperature.
Ver 1.0
2
2012/4/12
P06P03LCG
P-Channel Enhancement Mode MOSFET
Ver 1.0
3
2012/4/12
P06P03LCG
P-Channel Enhancement Mode MOSFET
Ver 1.0
4
2012/4/12
P06P03LCG
P-Channel Enhancement Mode MOSFET
Ver 1.0
5
2012/4/12
