NIKO-Semicon-PA102FMG
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PA102FMG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
R
DS(ON)
I
D
V
(BR)DSS
118m
Ω
@V
GS
= -4.5V
-20V
-3A
SOT-23
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
V
DS
LIMITS
-20
UNITS
V
V
GS
Gate-Source Voltage
±12
-3
T
A
= 25 °C
T
A
= 70 °C
I
D
I
DM
Continuous Drain Current
A
-2.1
-10
Pulsed Drain Current
1
Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
1.38
0.88
P
D
W
T
J
, T
STG
Operating Junction & Storage Temperature Range
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
R
q
JA
TYPICAL
MAXIMUM
90
UNITS
Junction-to-Ambient
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≦
1%
Ver 1.0
1
2012/4/12
PA102FMG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
UNIT
MIN
TYP MAX
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= -250
m
A
V
DS
= V
GS
, I
D
= -250
m
A
V
DS
= 0V, V
GS
= ±12V
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V , T
J
= 125 °C
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -2.5V, I
D
= -1A
V
GS
= -4.5V, I
D
= -2A
V
GS
= -10V, I
D
= -2A
V
DS
= -5V, I
D
= -2A
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
-20
V
nA
m
A
A
-0.45 -0.8
-1.2
±100
-1
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
1
-10
I
D(ON)
-10
150
98
215
118
85
Drain-Source On-State
Resistance
1
R
DS(ON)
m
Ω
72
Forward Transconductance
1
g
fs
16
S
DYNAMIC
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
430
235
95
7.6
3.2
2
V
GS
= 0V, V
DS
= -6V, f = 1MHz
pF
nC
10
V
DS
= 0.5V
(BR)DSS
, V
GS
= -4.5V,
I
D
= -2A
Q
gs
Q
gd
t
d(on)
t
r
11
32
38
32
22
55
68
55
V
DD
= -10V
nS
Turn-Off Delay Time
2
Fall Time
2
I
D
@
-1A, V
GS
= -4.5V, R
G
= 6
Ω
t
d(off)
t
f
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( T
J
= 25
°
C )
I
S
Continuous Current
Forward Voltage
1
-1.6
-1.2
A
V
V
SD
I
F
= -2A, V
GS
= 0V
1
Pulse test : Pulse Width
300
m
sec, Duty Cycle
2
％
.
2
Independent of operating temperature.
Ver 1.0
2
2012/4/12
PA102FMG
P-Channel Enhancement Mode MOSFET
Ver 1.0
3
2012/4/12
PA102FMG
P-Channel Enhancement Mode MOSFET
Ver 1.0
4
2012/4/12
PA102FMG
P-Channel Enhancement Mode MOSFET
Ver 1.0
5
2012/4/12
