NIKO-Semicon-PD636BA
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PD636BA
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
TO-252
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
I
D
1. GATE
2. DRAIN
3. SOURCE
G
48A
9m
Ω
S
100% RG Test , 100% UIL Test
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
V
DS
LIMITS
30
UNITS
V
V
Gate-Source Voltage
V
GS
±20
T
C
= 25 °C
48
Continuous Drain Current
2
I
D
T
C
= 100 °C
30.5
120
A
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
I
DM
I
AS
20
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
E
AS
20.8
37.9
15
mJ
W
P
D
Power Dissipation
Junction & Storage Temperature Range
T
J
, T
stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
R
JC
TYPICAL
MAXIMUM
UNITS
°C / W
Junction-to-Case
3.3
Junction-to-Ambient
62.5
R
JA
1
Pulse width limited by maximum junction temperature.
2
Package limitation current is 20A
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
LIMITS
MIN TYP MAX
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
30
V
GS
= 0V, I
D
= 250
A
V
DS
= V
GS
, I
D
= 250
A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
1.3 1.8
2.3
±100 nA
1
Zero Gate Voltage Drain Current
I
DSS
A
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
V
GS
= 4.5V, I
D
= 15A
10
12
9
10
7
Drain-Source On-State
Resistance
1
R
DS(ON)
m
Ω
V
GS
= 10V , I
D
= 20A
E-09-2
REV 1.0
1
PD636BA
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
TO-252
Halogen-Free & Lead-Free
Forward Transconductance
1
g
fs
V
DS
= 5V, I
D
= 20A
DYNAMIC
45
S
Input Capacitance
C
iss
C
oss
C
rss
R
g
765
143
91
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 0V, V
DS
= 15V, f = 1MHz
V
GS
= 0V, V
DS
= 0V, f = 1MHz
pF
3
Ω
V
GS
=10V
V
GS
=4.5V
Q
gs
16.5
8.9
2.2
5
Total Gate Charge
2
Q
g
V
DS
= 15V , I
D
= 20A
nC
nS
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Q
gd
t
d(on)
t
r
t
d(off)
t
f
26
22
V
DS
= 15V
42
I
D
20A, V
GS
= 10V, R
GEN
=6
Ω
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25
°
C)
Continuous Current
3
Forward Voltage
1
I
S
V
SD
t
rr
48
A
V
I
F
= 20A, V
GS
= 0V
1.2
Reverse Recovery Time
Reverse Recovery Charge
21
9
nS
nC
I
F
= 20A, dl
F
/dt = 100A /
S
Q
rr
1
Pulse test : Pulse Width
300
sec, Duty Cycle
2
％
.
2
Independent of operating temperature.
3
Package limitation current is 20A
E-09-2
REV 1.0
2
PD636BA
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
TO-252
Halogen-Free & Lead-Free
Output Characteristics
Transfer Characteristics
40
32
24
16
8
40
32
24
16
8
VGS=3.5V
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=4V
125
℃
-20
℃
VGS=3V
25
℃
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
Capacitance Characteristic
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1000
900
800
700
600
500
400
300
200
100
0
CISS
VGS=10V
ID=20A
COSS
CRSS
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
T
J
, Junction Temperature(
˚
C)
V
DS
, Drain-To-Source Voltage(V)
Gate charge Characteristics
Source-Drain Diode Forward Voltage
100
10
8
V
DS
=15V
I
D
=20A
25
℃
150
℃
10
6
4
1
2
0
0.1
0
4
8
12
16
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Qg , Total Gate Charge(nC)
V
SD
, Source-To-Drain Voltage(V)
E-09-2
REV 1.0
3
PD636BA
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
Single Pulse Maximum Power Dissipation
180
1000
100
10
Single Pulse
R
θ
JC = 3.3
˚
C/W
160
TC=25
˚
C
Operation in This Area
is Limited by RDS(ON)
140
120
100
80
60
40
20
0
↓
1ms
NOTE :
1.VGS= 10V
2.TC=25
˚
C
3.R
θ
JC = 3.3
˚
C/W
4.Single Pulse
10ms
100ms
DC
1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
1
Notes
Duty cycle=0.5
0.2
0.1
0.05
1.Duty cycle, D= t1 / t2
2.RthJC =
3.3
℃
/W
0.02
0.01
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
single pulse
0.1
0.0001
0.001
0.01
0.1
1
10
100
T
1
, Square Wave Pulse Duration[sec]
E-09-2
REV 1.0
4
