NIKO-Semicon-PK616BA
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PK616BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
R
DS(ON)
I
D
V
(BR)DSS
7mΩ @V
GS
= 10V
30V
50A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
LIMITS
30
UNITS
V
DS
V
V
V
GS
I
D
I
DM
I
D
Gate-Source Voltage
±20
50
T
c
= 25 °C
Continuous Drain Current
T
c
= 100 °C
31.5
120
13
Pulsed Drain Current
1
A
T
A
= 25 °C
T
A
= 70 °C
Continuous Drain Current
10.5
24
I
AS
Avalanche Current
Avalanche Energy
E
AS
L =0.1mH
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
28.5
31
mJ
W
P
D
Power Dissipation
Power Dissipation
12.5
2.2
P
D
W
1.4
T
J
, T
stg
Operating Junction & Storage Temperature Range
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
2
R
q
JA
R
q
JC
57
4
°C / W
Junction-to-Case
1
Pulse width limited by maximum junction temperature.
2
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
REV 1.0
1
2014-2-20
PK616BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
UNITS
MIN
TYP MAX
Drain-Source Breakdown
Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
m
A
30
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
m
A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C
V
GS
= 4.5V, I
D
= 13A
V
GS
= 10V , I
D
= 13A
V
DS
= 5V, I
D
= 13A
Gate Threshold Voltage
1.35
1.7
3
±100
1
Gate-Body Leakage
nA
Zero Gate Voltage Drain
Current
I
DSS
m
A
10
9.5
7
Drain-Source On-State
Resistance
1
Forward Transconductance
1
6.3
4.8
60
R
DS(ON)
g
fs
mΩ
S
DYNAMIC
C
iss
C
oss
C
rss
R
g
Input Capacitance
847
163
97
V
GS
= 0V, V
DS
= 15V, f = 1MHz
V
GS
= 0V, V
DS
= 0V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
2.3
17.5
9.3
2.1
5.4
27
Ω
V
GS
=10V
Total Gate Charge
2
Q
g
V
GS
=4.5V
Q
gs
V
DS
= 15V,
V
GS
= 10V, I
D
= 13A
nC
nS
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Q
gd
t
d(on)
t
r
V
DS
= 15V,
23
I
D
@
13A, V
GS
= 10V, R
GEN
= 6Ω
t
d(off)
t
f
51
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
I
S
Continuous Current
Forward Voltage
1
25.8
1.2
A
V
V
SD
t
rr
I
F
= 13A, V
GS
= 0V
Reverse Recovery Time
10.8
2.3
nS
nC
I
F
= 13A, dl
F
/dt = 100A / μS
Q
rr
Reverse Recovery Charge
1
Pulse test : Pulse Width
300
m
sec, Duty Cycle
2
％
.
2
Independent of operating temperature.
REV 1.0
2
2014-2-20
PK616BA
N-Channel Enhancement Mode MOSFET
REV 1.0
3
2014-2-20
PK616BA
N-Channel Enhancement Mode MOSFET
REV 1.0
4
2014-2-20
PK616BA
N-Channel Enhancement Mode MOSFET
REV 1.0
5
2014-2-20
