NIKO-Semicon-PK618BA
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N-Channel Enhancement Mode
Field Effect Transistor
PK618BA
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
D
D
D
D
D
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
I
D
G
59A
5.5m
Ω
G. GATE
D. DRAIN
S. SOURCE
#1
S
S
S
G
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
V
DS
LIMITS
30
UNITS
V
V
Gate-Source Voltage
V
GS
±20
59
T
C
= 25 °C
Continuous Drain Current
3
Pulsed Drain Current
1
Continuous Drain Current
I
D
I
DM
I
D
T
C
= 100 °C
37
150
15
T
A
= 25 °C
T
A
= 70 °C
A
12
Avalanche Current
Avalanche Energy
I
AS
31
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
E
AS
48
mJ
W
34
Power Dissipation
Power Dissipation
P
D
13
2.5
1.6
P
D
W
Operating Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
Junction-to-Case
SYMBOL
TYPICAL
MAXIMUM
UNITS
°C / W
50
R
JA
R
JC
3.6
1
Pulse width limited by maximum junction temperature.
2
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
3
Package limitation current is 26A.
D-51-1
REV 1.1
1
N-Channel Enhancement Mode
Field Effect Transistor
PK618BA
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
LIMITS
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
30
V
GS
= 0V, I
D
= 250
A
V
DS
= V
GS
, I
D
= 250
A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
1.5 1.75 2.35
±100 nA
1
Zero Gate Voltage Drain Current
I
DSS
A
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C
V
GS
= 4.5V, I
D
= 15A
V
GS
= 10V, I
D
= 20A
V
DS
= 5V, I
D
= 20A
10
6.8
5.5
4.5
3.7
60
Drain-Source On-State
Resistance
1
R
DS(ON)
g
fs
m
Ω
Forward Transconductance
1
S
DYNAMIC
Input Capacitance
C
iss
C
oss
C
rss
R
g
1330
257
154
1.6
V
GS
= 0V, V
DS
= 15V, f = 1MHz
V
GS
= 0V, V
DS
= 0V, f = 1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ω
V
GS
= 10V
28
15
4
Total Gate Charge
2
Q
g
V
DS
= 15V , V
GS
= 10V,
I
D
= 20A
V
GS
= 4.5V
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Q
gs
Q
gd
t
d(on)
t
r
nC
nS
7.1
19
10
40
12
V
DS
= 15V ,
I
D
20A, V
GS
= 10V, R
GEN
=6
Ω
t
d(off)
t
f
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
Continuous Current
3
Forward Voltage
1
I
S
V
SD
t
rr
59
A
V
I
F
= 20A, V
GS
= 0V
1.2
Reverse Recovery Time
Reverse Recovery Charge
22
8
nS
nC
I
F
= 20A, dl
F
/dt = 100A /
S
Q
rr
1
Pulse test : Pulse Width
300
sec, Duty Cycle
2
％
.
2
Independent of operating temperature.
3
Package limitation current is 26A.
D-51-1
REV 1.1
2
N-Channel Enhancement Mode
Field Effect Transistor
PK618BA
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
Transfer Characteristics
40
32
24
16
8
40
32
24
16
8
VGS=3V
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=2.5V
25
℃
-20
℃
125
℃
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
Capacitance Characteristic
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1600
1280
960
640
320
0
CISS
VGS=10V
ID=20A
COSS
CRSS
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
T
J
, Junction Temperature(
˚
C)
V
DS
, Drain-To-Source Voltage(V)
Gate charge Characteristics
Source-Drain Diode Forward Voltage
10
8
100
10
1
VDS=15V
ID=20A
6
150
℃
4
25
℃
2
0
0.1
0
6
12
18
24
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Qg , Total Gate Charge(nC)
V
SD
, Source-To-Drain Voltage(V)
D-51-1
REV 1.1
3
N-Channel Enhancement Mode
Field Effect Transistor
PK618BA
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
Safe Operating Area
Single Pulse Maximum Power Dissipation
80
1000
100
10
Operation in This
Area is Limited by
RDS(ON)
Single Pulse
R
θ
JA = 50
˚
C/W
TA=25
˚
C
64
48
32
16
0
1ms
1
10ms
100ms
NOTE :
1.VGS= 10V
2.TA=25
˚
C
3.R
θ
JA = 50
˚
C/W
4.Single Pulse
0.1
0.01
DC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
Notes
0.1
0.1
0.05
0.02
1.Duty cycle, D= t1 / t2
2.RthJA =
50
℃
/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
T
1
, Square Wave Pulse Duration[sec]
D-51-1
REV 1.1
4
