NIKO-Semicon-PK6A4BA
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PK6A4BA
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
D
D
D
D
D
PRODUCT SUMMARY
V
(BR)DSS
40V
R
DS(ON)
I
D
G
37A
10.5m
Ω
G. GATE
D. DRAIN
S. SOURCE
#1
S
S
S
G
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
V
DS
LIMITS
40
UNITS
V
V
Gate-Source Voltage
V
GS
±20
37
T
C
= 25 °C
Continuous Drain Current
Pulsed Drain Current
1
Continuous Drain Current
I
D
I
DM
I
D
T
C
= 100 °C
30
100
14
A
T
A
= 25 °C
T
A
= 70 °C
11
Avalanche Current
Avalanche Energy
I
AS
21
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
E
AS
22
mJ
W
31
Power Dissipation
Power Dissipation
3
P
D
20
4
P
D
W
2.7
Operating Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
R
JA
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
2
30
57
4
t
≦
10s
Junction-to-Ambient
2
Steady-State
°C / W
R
JA
Junction-to-Case
Steady-State
R
JC
1
Pulse width limited by maximum junction temperature.
2
The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
3
The Power dissipation is based on R
JA
t
≦
10s value.
F-7-02
REV1.0
1
PK6A4BA
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
LIMITS
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
STATIC
GS
= 0V, I
D
= 250
A
DS
= V
GS
, I
D
= 250
A
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
40
1.3 1.7
V
V
2.3
V
V
DS
= 0V, V
GS
= ±20V
V
DS
= 32V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
J
= 55 °C
V
GS
= 4.5V, I
D
= 10A
V
GS
= 10V, I
D
= 14A
V
DS
= 5V, I
D
= 14A
±100 nA
1
Zero Gate Voltage Drain Current
I
DSS
A
10
10
14
Drain-Source On-State
Resistance
1
R
DS(ON)
g
fs
m
Ω
8.6 10.5
Forward Transconductance
1
56
S
DYNAMIC
Input Capacitance
C
iss
C
oss
C
rss
R
g
937
118
72
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 0V, V
DS
= 20V, f = 1MHz
pF
Ω
V
GS
= 0V, V
DS
= 0V, f = 1MHz
2.6
V
GS
= 10V
17.6
9.3
2.3
4.7
Total Gate Charge
2
Q
g
V
GS
= 4.5V
V
DS
= 20V , V
GS
= 10V,
I
D
= 14A
nC
nS
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Q
gs
Q
gd
t
d(on)
t
r
21
13
33
12
V
DS
= 20V ,
t
d(off)
t
f
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
I
D
14A, V
GS
= 10V, R
GEN
=6
Ω
Continuous Current
Forward Voltage
1
I
S
V
SD
t
rr
23
A
V
I
F
= 14A, V
GS
= 0V
1.3
Reverse Recovery Time
Reverse Recovery Charge
6.9
1.1
nS
nC
I
F
= 14A, dl
F
/dt = 100A /
S
Q
rr
1
Pulse test : Pulse Width
300
sec, Duty Cycle
2
％
.
2
Independent of operating temperature.
F-7-02
REV1.0
2
PK6A4BA
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
Transfer Characteristics
30
24
18
12
6
25
20
15
10
5
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=4V
VGS=3.5V
VGS=3V
-20
℃
25
℃
125
℃
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
Gate charge Characteristics
Capacitance Characteristic
10
8
1200
1000
800
600
400
200
0
VDS=20V
ID=14A
CISS
6
4
2
COSS
CRSS
0
0
4
8
12
16
20
0
5
10
15
20
25
Qg , Total Gate Charge(nC)
V
DS
, Drain-To-Source Voltage(V)
On-Resistance VS Drain Current
On-Resistance VS Gate-To-Source
0.05
0.04
0.03
0.02
0.01
0
0.03
0.024
0.018
0.012
0.006
0
VGS=4.5V
VGS=10V
ID=14A
2
4
6
8
10
0
4
8
12
16
20
V
GS
, Gate-To-Source Voltage(V)
I
D
, Drain-To-Source Current(A)
F-7-02
REV1.0
3
PK6A4BA
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
On-Resistance VS Temperature
Source-Drain Diode Forward Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100
10
1
150
℃
25
℃
VGS=10V
ID=14A
0.1
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
, Junction Temperature(
˚
C)
V
SD
, Source-To-Drain Voltage(V)
Safe Operating Area
Single Pulse Maximum Power Dissipation
40
1000
100
10
Operation in This Area
is Limited by RDS(ON)
Single Pulse
R
θ
JA = 57
˚
C/W
TA=25
˚
C
35
30
25
20
15
10
5
↓
1
1ms
10ms
NOTE :
1.VGS= 10V
2.TA=25
˚
C
3.R
θ
JA = 57
˚
C/W
4.Single Pulse
100ms
0.1
0.01
DC
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
Notes
0.1
0.1
0.05
0.02
0.01
1.Duty cycle, D= t1 / t2
2.RthJA =
57
℃
/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
T
1
, Square Wave Pulse Duration[sec]
F-7-02
REV1.0
4
