NIKO-Semicon-PZ2N7002M
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PZ2N7002M
SOT-23(S)
Halogen-Free & Lead-Free
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
NIKO-SEM
Drain
PRODUCT SUMMARY
Gate
V
(BR)DSS
60V
R
DS(ON)
I
D
G. GATE
D. DRAIN
S. SOURCE
300mA
2
Ω
ESD PROTECTION DIODE
Source
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
V
DS
LIMITS
60
UNITS
V
V
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
V
GS
±25
T
C
= 25 ° C
300
I
D
I
DM
mA
A
T
C
= 100 ° C
190
1
T
C
= 25 ° C
0.35
0.14
-40 to 150
P
D
W
T
C
= 100 ° C
Operating Junction & Storage Temperature Range
T
j
, T
stg
° C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1
Pulse width limited by maximum junction temperature.
SYMBOL
TYPICAL
MAXIMUM
350
UNITS
° C / W
R
JA
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
LIMITS
MIN TYP
MAX
PARAMETER
SYMBOL
TEST CONDITIONS
UNIT
STATIC
GS
= 0V, I
D
= 100
A
DS
= V
GS
, I
D
= 100
A
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
60
V
V
1.0
1.8
2.5
±30
1
V
V
DS
= 0V, V
GS
= ±16V
V
DS
= 48V, V
GS
= 0V
A
Zero Gate Voltage Drain Current
On-State Drain Current
1
I
DSS
I
D(ON)
A
V
DS
= 40V, V
GS
= 0V, T
J
= 125 ° C
V
DS
= 10V, V
GS
= 10V
10
1
A
V
GS
= 3.5V, I
D
= 10mA
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 200mA
V
DS
= 20V, I
D
= 200mA
2.1
1.7
5
3
2
Drain-Source On-State Resistance
1
R
DS(ON)
Ω
S
1.6
Forward Transconductance
1
g
fs
0.18
E-31-3
REV 1.0
1
PZ2N7002M
SOT-23(S)
Halogen-Free & Lead-Free
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
NIKO-SEM
DYNAMIC
Input Capacitance
Output Capacitance
C
iss
36
V
GS
= 0V, V
DS
= 25V, f = 1MHz
C
oss
pF
10
Reverse Transfer Capacitance
Total Gate Charge
2
C
rss
Q
g
6
1.6
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Turn-Off Delay Time
2
Q
gs
Q
gd
t
d(on)
t
d(off)
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 200mA
nC
0.2
1
30
V
DD
= 30V, I
D
=200mA, R
G
=10
Ω
ns
V
GS
= 10V
125
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 ° C)
Continuous Current
Forward Voltage
1
I
S
300 mA
I
F
=200mA, V
GS
= 0V
V
SD
1.2
V
1
Pulse test : Pulse Width
300
sec, Duty Cycle
2
％
.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: ESD Protected Gate, 2KV HBM
E-31-3
REV 1.0
2
PZ2N7002M
SOT-23(S)
Halogen-Free & Lead-Free
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
NIKO-SEM
Output Characteristics
Transfer Characteristics
0.8
0.6
0.4
0.2
0
8.0E-01
6.0E-01
4.0E-01
2.0E-01
0.0E+00
VGS=10V
VGS=9 V
VGS=8 V
VGS=7 V
VGS=6 V
VGS=5 V
VGS =3.5V
25
℃
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
Capacitance Characteristic
On-Resistance VS Temperature
R
DS(ON)
╳
45
40
35
30
25
20
15
10
5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
R
DS(ON)
╳
╳
CISS
R
DS(ON)
R
DS(ON)
╳
╳
R
DS(ON)
R
DS(ON)
╳
╳
R
DS(ON)
R
DS(ON)
COSS
CRSS
V
GS
=10V
╳
╳
0.6
0.4
I
D
=200
m
A
R
DS(ON)
0
0
5
10
15
20
25
30
-50 -25
0
25
50
75 100
125 150
T
J
, Junction Temperature(
˚
C)
V
DS
, Drain-To-Source Voltage(V)
Gate charge Characteristics
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
1.0E+01
1.0E+00
10
8
V
DS
=30V
I
D
=0.2A
6
T
J
=150
°
C
1.0E-01
4
T
J
=25
°
C
1.0E-02
1.0E-03
2
1.0E-04
0
0
0.4
0.8
1.2
1.6
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Qg , Total Gate Charge(nC)
V
SD
, Source-To-Drain Voltage(V)
E-31-3
REV 1.0
3
PZ2N7002M
SOT-23(S)
Halogen-Free & Lead-Free
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
NIKO-SEM
Gate Threshold Voltage VS Temperature
2.2
Single Pulse Maximum Power Dissipation
20
2
1.8
1.6
SINGLE PULSE
15
10
5
R
θ
JA
= 350
C/W
°
T
A
=25
C
°
Typ
1.4
1.2
1
0.8
0.6
0.4
0.2
I
D
=1mA
145
0
-55
-30
-5
20
45
70
95
120
170
0.001
0.01
0.1
1
10
T
J
, Junction Temperature(
˚
C)
Single Pulse Time(s)
Safe Operating Area
10
Op
e
ration in This
Area is Limited by
R
DS(ON)
1
0.1
↓
1
m
s
10
m
s
100
m
s
1S
10S
DC
NO
T
E :
0.01
0.001
1.V
G
S
= 10V
2.T =25
A
C
°
3.R
θ
JA
= 350
C/W
°
4.Single Pulse
1
10
100
V
DS
, Drain-To-Source Voltage(V)
Transient Thermal Response Curve
1.00E+01
1.00E+00
1.00E-01
1.00E-02
Duty Cycle=0.5
Note
0.2
0.1
1.Duty cycle, D= t1 / t2
2.Rth
JA
=350
o
C/W
3.T
J
-T
A
= P*Rth
JC
(t)
4.Rth
JC
(t) = r(t)*Rth
JA
0.05
0.02
0.01
single Pluse
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
T
1
, Square Wave Pulse Duration[sec]
E-31-3
REV 1.0
4
