NTE-ELECTRONICS–INC–2N4033

2N4033  

Silicon PNP Transistor  

Small Signal General Purpose Amplifier  

TO

−

39 Type Package  

Description:  

The 2N4033 is a silicon transistor in a TO

−

39 type package designed primarily for amplifier and  

switching applications.

 

This device features high breakdown voltages, low leakage currents, low ca-  

pacity, and a beta useful over an extremely wide current range.  

Absolute Maximum Ratings:

 

(Note 1)  

Collector

−

Emitter Voltage (Note 2), V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  

Collector

−

Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  

Emitter

−

Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

5V  

Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1A  

Power Dissipation (T

A

= +25



C, Note 3), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

800 mW  

Derate above 25



C .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4.56mw/



C  

Power Dissipation (T

C

= +25



C, Note 3), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4W  

Derate above 25



C .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

22.8mw/



C  

Operating

T

e

mperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200



C  

Storage

T

e

mperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−

65



to +200



C  

Thermal Resistance, Junction

−

to

−

Ambient, R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

219



C/W  

Thermal Resistance, Junction

−

to

−

Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43.7



C/W  

Note 1.

 

These ratings are limiting values above which the serviceability of any device may be im-  

paired.  

Note 2.

 

Rating refers to a high current point where Collector

−

Emitter voltage is lowest.  

Note 3.

 

These are steady state limits and give a maximum junction temperature of +200



C.  

Electrical Characteristics:

 

(T

A

= +25



C unless otherwise specified)  

Parameter  

Symbol  

Test Conditions  

I =

 

10



, I

 

= 0  

Min  

Typ Max  

Unit  

V

Collector Base Breakdown Voltage  

Emitter Base Breakdown Voltage  

Emitter Cutoff Current  

BV  

BV  

80  

5

−

−

−

−

−

−

−

−

−

−

−

−

CBO  

C

E

I =

 

10



, I

 

= 0  

V

EBO  

E

C

I

V

= 5V, I  

0

−

10  

50  

50  

−



A  

nA  



A  

EBO  

EB  

CB  

CB  

C =  

Collector Cutoff Current  

I

V

V

= 60V, I

 

= 0  

−

CBO  

E

= 60V, T

 

= 150



C  

−

A

I =

 

100



A, V

 

= 5V  

75  

100  

70  

25  

40  

DC Current Gain  

h

FE  

C

CE  

I =

 

100



A, V

 

= 5V, Note 4  

300  

−

C

CE  

I =

 

500mA, V

 

= 5V, Note 4  

C

CE  

I =

 

1A, V

 

= 5V, Note 4  

−

C

CE  

I =

 

100mA, V

 

= 5V,  

−

C

CE  

T =

 

−

55



C, Note 4  

A

Note 4.

 

Pulse

T

e

st; Pulse Width



300



s, Duty Cycle = 1%  

Electrical Characteristics (Cont’d):

 

(T

A

= +25



C unless otherwise specified)  

Parameter  

Symbol  

Test Conditions  

I =

 

10mA (pulsed), I

 

= 0, Note 4  

Min  

80  

−

Typ Max  

Unit  

V

Collector Emitter Sustaining Voltage  

Collector Emitter Saturation Voltage  

V

CEO  

−

−

−

−

−

−

−

−

−

−

C

B

I =

 

150mA, I

 

= 15mA, Note 4  

−

0.15  

−

0.5  

−

1.0  

−

1.1  

−

0.9  

20  

V

V

C

B

CE(sat)  

I =

 

500mA, I

 

= 50mA, Note 4  

−

V

C

B

I =

 

1A, I

 

= 100mA, Note 4  

−

V

C

B

Base Emitter ON Voltage  

Base Emitter Saturation Voltage  

Collector to Base Capacitance  

Input Capacitance  

V

I =

 

500mA, V

 

=

−

0.5

V

,

N

ote 4  

−

V

BE(ON)  

C

BE  

V

BE(sat)  

I =

 

150mA, I

 

= 15mA, Note 4  

−

V

C

B

C

cb  

V

=

−

10

V

, I

 

=

0

, f = 1MHz  

−

pF  

pF  

CB  

BE  

E

C

ib  

V

=

−

0.5

V

, I

 

=

0

, f = 1MHz  

−

110  

5.0  

C

Magnitude of Common Emitter  

Small Signal Current Gain  

|h |  

fe  

I =

 

50mA, V

 

=

−

10V,  

1.5  

C

CE  

f = 100MHz  

Storage Time  

Fall Time  

t

I

[

500mA, I

 

[

I

[

50mA  

−

−

−

−

−

−

350  

50  

ns  

ns  

ns  

s

C

B1  

B2  

t

f

Turn On Time  

t

on  

I

[

500mA, I

 

[

50mA  

100  

C

B1  

Note 4.

 

Pulse

T

e

st; Pulse Width



300



s, Duty Cycle = 1%  

Note 1.

 

Pulse

T

e

st; Pulse Width



300



s, Duty Cycle



2%  

.370 (9.39) Dia Max  

.355 (9.03) Dia Max  

.260  

(6.6)  

Max  

.500  

(12.7)  

Min  

.018 (0.45)  

Base  

Emitter  

Collector/Case  

45



 

.031 (.793)