NTE-ELECTRONICS–INC–2N6125
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2N6125
Silicon PNP Transistor
Power Amp Driver, Output, Switch
TO
−
220 Type Package
Description:
The 2N6125 is a silicon PNP transistor in a TO
−
220 type package designed for use in power amplifier
and switching circuit applications.
Features:
D
Collector
−
Emitter Sustaining Voltage:
V
CEO(sus)
= 60V Min
D
Collector
−
Emitter Saturation Voltage:
V
CE(sat)
= 600mV Max @ I
C
= 1.5A, I
B
= 150mA
Absolute Maximum Ratings:
Collector
−
Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector
−
Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter
−
Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V
Collector Current, I
C
Continuous .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A
Peak .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8A
T
o
tal Power Dissipation (T
C
= +25
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
320mW
C
Operating Junction
T
e
mperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
65
to +150
C
Storage
T
e
mperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
65
to +150
C
Thermal Resistance, Junction
−
to
−
Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125
C/W
Electrical Characteristics:
(T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector
−
Emitter Sustaining Voltage
Collector Cutoff Current
V
I =
100mA, I
= 0, Note 1
60
−
−
−
−
−
−
−
V
CEO(sus)
C
B
I
V
= 60V, I
= 0
1.0
0.1
2.0
1.0
mA
mA
mA
mA
CEO
CE
CE
CE
EB
B
I
V
V
V
= 60V, V
= 1.5V
−
CEX
BE(off)
BE(off)
= 60
V
, V
= 1.5
V
, T
=
+
125
C
−
J
Emitter Cutoff Current
I
= 5V, I
= 0
−
EBO
C
Note 1.
Pulse
T
e
st: Pulse Width = 300
s, Duty Cycle
2%.
Electrical Characteristics (Cont’d):
(T
C
= +25
C unless otherwise specified)
Parameter
ON Characteristics
(Note 1)
DC Current Gain
Symbol
Test Conditions
Min Typ Max Unit
h
FE
V
V
= 2V, I
= 1.5A
20
10
−
−
−
−
−
−
80
−
CE
C
= 2V, I
= 4A
CE
C
Collector
−
Emitter Saturation Voltage
V
CE(sat)
I =
1.5A, I
= 150mA
0.6
1.4
1.2
V
V
V
C
B
I =
4A, I
= 1A
−
C
B
Base
−
Emitter ON Voltage
Dynamic Characteristics
Current
−
Gain
−
Bandwidth Product
Small
−
Signal Current Gain
V
BE(on)
I =
1.5A, V
= 2V
−
C
CE
f
T
I =
1A, V
= 4V, f = 1MHz, Note 2
2.5
25
−
−
−
−
MHz
C
CE
h
fe
I =
100mA, V
= 2V, f = 1kHz
C CE
Note 1.
Pulse
T
e
st: Pulse Width = 300
s, Duty Cycle
2%.
Note 2.
f
T
= |h
fe
|
f
test
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250
(6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
Emitter
Collector/
T
a
b
.100 (2.54)
