NTE-ELECTRONICS–INC–2N6284
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2N6284 (NPN)
Silicon Complementary Darlington Transistors
Power Amplifier
Description:
The 2N6284 (NPN) is a silicon complementary Darlington transistor in a TO3 type case designed for
general
−
purpose amplifier and low
−
frequency switching applications.
Features:
D
High DC Current Gain @ I
C
= 10A:
h
FE
= 2400 Typ
D
Collector
−
Emitter Sustaining Voltage:
V
CEO(sus)
= 100V Min
D
Monolithic Construction with Built
−
In Base
−
Emitter Shunt Resistors
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector
−
Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector
−
Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter
−
Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V
Collector Current, I
C
Continuous .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5mA
T
o
tal Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160W
Derate Above 25
°
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/
°
C
Operating Junction
T
e
mperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
65
°
to +200
°
C
Storage
T
e
mperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
65
°
to +200
°
C
Thermal Resistance, Junction
−
to
−
Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min
Typ Max
Unit
Collector
−
Emitter SustainingVoltage
Collector Cutoff Current
V
I =
100mA, I
= 0
100
−
−
−
−
−
−
V
CEO(sus)
C
B
I
V
= 50V, I
= 0
1.0
0.5
5.0
mA
mA
mA
CEO
CE
CE
CE
E
I
V
= 100V, V
= 1.5V
= 1.5V,
−
CEX
BE(off)
BE(off)
V
= 100V, V
−
T =
+150
°
C
A
Emitter Cutoff Current
ON Characteristics
(Note 1)
DC Current Gain
I
V
= 5V, I
= 0
−
−
2.0
mA
EBO
BE
C
h
V
V
= 3V, I
= 10A
750
100
−
−
−
−
−
−
−
18000
−
FE
CE
C
= 3V, I
= 20A
CE
C
Collector
−
Emitter Saturation Voltage
V
V
I =
10A, I
= 40mA
C
2.0
3.0
4.0
2.8
V
V
V
V
CE(sat)
B
I =
20A, I
= 200mA
C
−
B
Base
−
Emitter Saturation Voltage
Base
−
Emitter ON Voltage
Dynamic Characteristics
Small
−
Signal Current Gain
I =
20A, I
= 200mA
C
−
BE(sat)
B
V
BE(on)
V
CE
= 3V, I
= 10A
−
C
h
fe
V
V
= 3V, I
= 10A, f = 1kHz
300
4.0
−
−
−
−
CE
C
Magnitude of Common Emitter
Small
−
Signal Short
−
Circuit
|h |
= 3V, I
= 10A, f = 1MHz
MHz
pF
fe
CE
C
Forward Current Transfer Ratio
Output Capacitance
C
V
CB
= 10V, I
= 0, f = 0.1MHz
−
−
400
ob
E
Note 1.
Pulse
T
e
st:
Pulse Width = 300
μ
s, Duty Cycle = 2%
Schematic Diagram
C
C
B
B
E
E
NPN
PNP
.135 (3.45) Max
.875 (22.2)
.350 (8.89)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/Case
Base
