NTE-ELECTRONICS–INC–2N6287
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2N6287
Silicon PNP Darlington Transistor
Power Amplifier
Description:
The 2N6287 is silicon PNP Darlington transistor in a TO3 type case designed for general
−
purpose
amplifier and low
−
frequency switching applications.
Features:
D
High DC Current Gain @ I
C
= 10A:
h
FE
= 4000 Typ (NTE252)
D
Collector
−
Emitter Sustaining Voltage:
V
CEO(sus)
= 100V Min
D
Monolithic Construction with Built
−
In Base
−
Emitter Shunt Resistors
Absolute Maximum Ratings:
(T
A
= +25
C unless otherwise specified)
Collector
−
Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector
−
Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter
−
Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V
Collector Current, I
C
Continuous .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA
T
o
tal Power Dissipation (T
C
= +25
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160W
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/
C
Operating Junction
T
e
mperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
65
to +200
C
Storage
T
e
mperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
65
to +200
C
Thermal Resistance, Junction
−
to
−
Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09
C/W
Electrical Characteristics:
(T
A
= +25
C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min
Typ Max
Unit
Collector
−
Emitter SustainingVoltage
Collector Cutoff Current
V
I =
100mA, I
= 0
100
−
−
−
−
−
−
V
CEO(sus)
C
B
I
V
= 50V, I
= 0
1.0
0.5
5.0
mA
mA
mA
CEO
CE
CE
CE
E
I
V
= 100V, V
= 1.5V
= 1.5V,
−
CEX
BE(off)
BE(off)
V
= 100V, V
−
T =
+150
C
A
Emitter Cutoff Current
I
V
BE
= 5V, I
= 0
−
−
2.0
mA
EBO
C
Electrical Characteristics (Cont’d):
(T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
ON Characteristics
(Note 1)
DC Current Gain
h
V
V
= 3V, I
= 10A
750
100
−
−
−
−
−
−
−
18000
−
FE
CE
C
= 3V, I
= 20A
CE
C
Collector
−
Emitter Saturation Voltage
V
V
I =
10A, I
= 40mA
C
2.0
3.0
4.0
2.8
V
V
V
V
CE(sat)
B
I =
20A, I
= 200mA
C
−
B
Base
−
Emitter Saturation Voltage
Base
−
Emitter ON Voltage
Dynamic Characteristics
Small
−
Signal Current Gain
I =
20A, I
= 200mA
C
−
BE(sat)
B
V
V
CE
= 3V, I
= 10A
−
BE(on)
C
h
V
V
= 3V, I
= 10A, f = 1kHz
300
4.0
−
−
−
−
fe
CE
C
Magnitude of Common Emitter
Small
−
Signal Short
−
Circuit
|h |
= 3V, I
= 10A, f = 1MHz
MHz
pF
fe
CE
C
Forward Current Transfer Ratio
Output Capacitance
C
ob
V
CB
= 10V, I
= 0, f = 0.1MHz
−
−
600
E
Note 1.
Pulse
T
e
st:
Pulse Width = 300
s, Duty Cycle = 2%
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
C
B
.312 (7.93) Min
Emitter
.040 (1.02)
E
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/Case
Base
