NTE-ELECTRONICS–INC–MJ11033
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MJ11032 (NPN) & MJ11033 (PNP)
Silicon Darlington Transistors
High Current, General Purpose
TO
−
3 Type Package
Description:
The MJ11032 (NPN) and MJ11033 (PNP) are silicon complementary Darlington transistors in a TO
−
3
type package designed for use as output devices in general purpose amplifier applications.
Features:
D
High Gain Darlington Performance
D
High DC Current Gain:
h
FE
= 1000 (Min) @ I
C
= 25A
h
FE
= 400 (Min) @ I
C
= 50A
D
Monolithic Construction
w
/Built
−
In Base
−
Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector
−
Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector
−
Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter
−
Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V
Collector Current, I
C
Continuous .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Peak .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A
T
o
tal Power Dissipation (T
C
= +25
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300W
Derate Above 25
C @ T
C
= +100
C .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71W/
C
Operating Junction
T
e
mperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
65
to +200
C
Storage
T
e
mperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
65
to +200
C
Thermal Resistance, Junction
−
to
−
Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584
C/W
Electrical Characteristics:
(T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector
−
Emitter Sustaining Voltage
Collector Cutoff Current
V
I =
100mA, I
= 0, Note 1
120
−
−
−
−
−
−
−
2
V
CEO(sus)
C
B
I
V
= 50V, I
= 0
mA
mA
mA
mA
CEO
CE
CE
CE
BE
B
Collector
−
Emitter Leakage Current
I
V
V
V
= 120V, R
= 1k
−
2
CER
BE
= 120
V
, R
=
1
k
, T
= +125
C
−
10
5
BE
C
Emitter Cutoff Current
I
= 5V, I
= 0
−
EBO
C
Note 1.
Pulse
T
e
st:
Pulse Width = 300
s, Duty Cycle
2%.
Electrical Characteristics (Cont’d):
(T
C
= +25
C unless otherwise specified)
Parameter
ON Characteristics
(Note 1)
DC Current Gain
Symbol
Test Conditions
Min
Typ
Max Unit
h
FE
I =
25A, V
= 5V
1000
400
−
−
−
−
−
−
−
18000
C
CE
I =
50A, V
= 5V
−
C
CE
Collector
−
Emitter Saturation Voltage
Base
−
Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
I =
25A, I
= 250mA
2.5
3.5
3.0
4.5
V
V
V
V
C
B
I =
50A, I
= 500mA
−
C
B
I =
25A, I
= 200mA
−
C
B
I =
50A, I
= 300mA
−
C
B
Dynamic Characteristics
Small
−
Signal Current Gain
|h |
fe
I =
10A, V
= 3V, f = 1.0MHz
4
−
−
C
CE
Note 1.
Pulse
T
e
st:
Pulse Width = 300
s, Duty Cycle
2%.
Note 2.
f
T
= |h
fe
|
f
test
Schematic Diagram
C
C
E
B
B
E
NPN
PNP
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.061 (1.55) Max
1.187
(30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/Case
Base
