NTE-ELECTRONICS–INC–NTE2357

NTE2357 (NPN) & NTE2358 (PNP)  

Silicon Complementary Transistors  

Digital

w

/2 Built–In 22k Bias Resistors  

Features:  

D

Built–In Bias Resistor (R

1

= 22k

Ω

, R

2

= 22k

Ω

)  

D

Small–Sized Package (TO92 type)  

Applications:  

D

Switching Circuit  

D

Inverter  

D

Interface Circuit  

D

Driver  

Absolute Maximum Ratings:

 

(T

A

= +25

°

C unless otherwise specified)  

Collector to Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

50V  

Collector to Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

50V  

Emitter to Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

10V  

Collector Current, I

C  

Continuous .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

100mA  

Peak .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

200mA  

Collector Dissipation, P

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

300mW  

Operating Junction

T

e

mperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150

°

C  

Storage

T

e

mperature Range,

T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55

°

to +160

°

C  

Electrical Characteristics:

(T

A

= +25

°

C unless otherwise specified)  

Parameter  

Symbol  

Test Conditions  

= 40V, I

 

= 0  

Min  

–

Typ Max Unit  

Collector Cutoff Current  

I

V

CB  

V

CE  

V

EB  

V

CE  

V

CE  

–

–

0.1  

0.5  

150  

–

µ

A  

µ

A  

µ

A  

CBO  

E

I

= 40V, I

 

= 0  

–

CEO  

B

Emitter Cutoff Current  

DC Current Gain  

I

= 5V, I

 

= 0  

70  

50  

113  

–

EBO  

C

h

FE  

= 5V, I

 

= 5mA  

C

Gain Band–width Product  

NTE2357  

f

T

= 10V, I

 

= 5mA  

C

–

–

250  

200  

–

–

MHz  

MHz  

NTE2358  

Output Capacitance  

NTE2357  

C

ob  

V

CB  

= 10V, f = 1MHz  

–

–

3.7  

5.5  

–

–

pF  

pF  

NTE2358  

Electrical Characteristics (Cont

’

d):

(T

A

= +25

°

C unless otherwise specified)  

Parameter  

Collector

–

Emitter Saturation Voltage  

Collector

–

Base Breakdown Voltage  

Collector

–

Emitter Breakdown Voltage  

Input OFF Voltage  

Symbol  

Test Conditions  

I =

 

10mA, I

 

= 0.5mA  

Min  

–

Typ Max Unit  

V

CE(sat)  

0.1  

–

0.3  

–

V

V

C

B

V

I =

 

10

µ

A, I

 

= 0  

50  

50  

0.8  

1.0  

15  

0.9  

(BR)CBO  

(BR)CEO  

C

E

V

I =

 

100

µ

A, R

 

=

∞  

–

–

V

C

BE  

V

I(off)  

V

= 5V, I

 

= 100

µ

A  

1.1  

1.9  

22  

1.0  

1.5  

3.0  

29  

1.1  

V

CE  

CE  

C

Input ON Voltage  

V

I(on)  

V

= 200mV, I

 

= 5mA  

V

C

Input Resistance  

R

1

k

Ω  

Input Resistance Ratio  

R /R  

1 2  

Schematic Diagram  

Collector  

(Output)  

Collector  

(Output)  

R

R

1

1

Base  

(Input)  

Base  

(Input)  

R

R

2

2

Emitter  

(GND)  

Emitter  

(GND)  

NPN  

PNP  

.165 (4.2)  

Max  

.126  

(3.2)  

Max  

.071  

(1.8)  

.500  

(12.7)  

Max  

E C B  

.035 (0.9)  

.050 (1.27)  

.050 (1.27)  

.102  

(2.6)  

Max